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Liu M, Zhang X, Hu S, Zhou R, Guo Y, Li W. Effective Diffusion Barrier Layer Achieves Thermal Stability for n-Type Bi 2Te 2.7Se 0.3 Thermoelectric Generators. ACS APPLIED MATERIALS & INTERFACES 2025; 17:28873-28880. [PMID: 40325504 DOI: 10.1021/acsami.5c03193] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2025]
Abstract
Bismuth telluride alloys are widely used in the commercial thermoelectric market due to their outstanding thermoelectric performance near room temperature. To improve the performance and stability of n-type Bi2Te3 devices aiming at power generation applications, this work focuses on the exploration of potential metal barrier materials between the thermoelectric material and the electrode, via the revelation of the diffusion behaviors for 11 metals in n-type Bi2Te2.7Se0.3. Ti was identified as a potential one due to its excellent bonding with Bi2Te2.7Se0.3 sintered at a relatively low temperature and low diffusion coefficient. As a demonstration, an n-type Bi2Te2.7Se0.3 single-leg device and module for power generation were fabricated using Ti as the barrier layer between the thermoelectric materials and weldable Ni electrodes. The nearly unchanged output power and conversion efficiency after several thermal cycles and long-term stability measurements at a hot-side temperature of 495 K for 160 h robustly demonstrate the excellent thermal stability for these generators using Ti as a barrier layer.
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Affiliation(s)
- Min Liu
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804, China
| | - Xinyue Zhang
- School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China
| | - Shanshan Hu
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804, China
| | - Rui Zhou
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804, China
| | - Yu Guo
- Xi'an Sailong Additive Manufacturing Technologies Co., Ltd, 666 Zaohe East Road, Xi'an 710016, China
| | - Wen Li
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804, China
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Verma AK, Johari KK, Jain S, Vashishtha P, Murdoch BJ, Dekiwadia C, Tiwari Y, Dhakate SR, Walia S, Gahtori B. Favorable Contact with Low Interfacial Resistance for n-Type TiCoSb-Based Thermoelectric Devices. ACS APPLIED MATERIALS & INTERFACES 2025; 17:6294-6303. [PMID: 39812024 DOI: 10.1021/acsami.4c18148] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/16/2025]
Abstract
In the past decade, significant efforts have been made to develop efficient half-Heusler (HH) based thermoelectric (TE) materials. However, their practical applications remain limited due to various challenges occurring during the fabrication of TE devices, particularly the development of stable contacts with low interfacial resistance. In this study, we have made an effort to explore a stable contact material with low interfacial resistance for an n-type TiCoSb-based TE material, specifically Ti0.85Nb0.15CoSb0.96Bi0.04 as a proof of concept, using a straightforward facile synthesis route of spark plasma sintering. We tested many metals with compatible coefficients of thermal expansion to TiCoSb, like Fe and Co. Still, we failed to form proper atomic bonds with the TE material. In contrast, Ti metal bonded correctly but showed very high electrical contact resistance (∼300 mΩ at one side), reducing performance due to Ti diffusion and a high potential barrier at the interface. This issue was addressed by highly doped semiconductor (HDS) contact Ti0.7Nb0.3CoSb, which matched the TE material in terms of atomic bonding, crystal structure, and stability. The leg with the HDS contact demonstrated superior electronic transport performance and low interface resistance (∼15 mΩ at one side), achieving a maximum output power of 30.7 mW at ΔT = 451 K due to the sharp interface with a low barrier height. These findings suggest that using HDS material as a contact with the same HH TE material would be an effective way to develop a TE device with low interface resistance and high thermal stability.
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Affiliation(s)
- Ajay Kumar Verma
- School of Engineering, RMIT University, GPO Box 2476, Melbourne, Victoria 3001, Australia
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India
- Academy of Scientific & Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Kishor Kumar Johari
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India
- Academy of Scientific & Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Shamma Jain
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India
- Academy of Scientific & Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Pargam Vashishtha
- School of Engineering, RMIT University, GPO Box 2476, Melbourne, Victoria 3001, Australia
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India
- Academy of Scientific & Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Billy James Murdoch
- RMIT Microscopy and Microanalysis Facility, RMIT University, Melbourne 3000, Australia
| | - Chaitali Dekiwadia
- RMIT Microscopy and Microanalysis Facility, RMIT University, Melbourne 3000, Australia
| | - Yoshit Tiwari
- School of Engineering, RMIT University, GPO Box 2476, Melbourne, Victoria 3001, Australia
| | - Sanjay R Dhakate
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India
- Academy of Scientific & Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Sumeet Walia
- School of Engineering, RMIT University, GPO Box 2476, Melbourne, Victoria 3001, Australia
| | - Bhasker Gahtori
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India
- Academy of Scientific & Innovative Research (AcSIR), Ghaziabad 201002, India
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Lin Z, Guo Y, Bai J, Hong A, Li C, Wu Y, Kong F, Xiao Q. Impact of Boron Nitride on the Thermoelectric Properties and Service Stability of Cu 2-xSe. ACS APPLIED MATERIALS & INTERFACES 2025; 17:1922-1930. [PMID: 39780381 DOI: 10.1021/acsami.4c16857] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/11/2025]
Abstract
Improving the thermoelectric performance and service stability is essential for the effective use of cuprous selenide (Cu2-xSe). In this study, hexagonal boron nitride (h-BN) was incorporated into nano-Cu2-xSe, with the goal of enhancing thermoelectric performance and service stability. It was found that Cu2-xSe-0.005 wt % BN showed a higher thermoelectric figure of merit (zT) value (∼1.76 at 923 K), which was 11% greater than that of pure Cu2-xSe, mainly due to a significant reduction in lattice thermal conductivity (kL) to about 50% (0.13 W m-1 K-1). Additionally, the formation of an ion-blocking interface by hexagonal boron nitride effectively shortens the migration path of Cu+ ions, improving service stability while maintaining the contribution of Cu+ transitions to thermal conductivity. Finally, an increase in hardness of ∼11.1% was observed, reaching 0.7 GPa in Cu2-xSe-0.02 wt % BN. This research is a feasible approach to improving the service stability of Cu2-xSe.
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Affiliation(s)
- Zihao Lin
- Jiangxi Province Key Laboratory of Organic Functional Molecules, Institute of Organic Chemistry, Jiangxi Science and Technology Normal University, Nanchang 330013, China
| | - Yajing Guo
- Jiangxi Province Key Laboratory of Organic Functional Molecules, Institute of Organic Chemistry, Jiangxi Science and Technology Normal University, Nanchang 330013, China
| | - Jiang Bai
- Jiangxi Province Key Laboratory of Organic Functional Molecules, Institute of Organic Chemistry, Jiangxi Science and Technology Normal University, Nanchang 330013, China
| | - Aijun Hong
- Jiangxi Key Laboratory of Nanomaterials and Sensors, School of Physics, Communication and Electronics, Jiangxi Normal University, Nanchang 330022, China
| | - Changcun Li
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Yanli Wu
- Jiangxi Province Key Laboratory of Organic Functional Molecules, Institute of Organic Chemistry, Jiangxi Science and Technology Normal University, Nanchang 330013, China
| | - Fangfang Kong
- Jiangxi Province Key Laboratory of Organic Functional Molecules, Institute of Organic Chemistry, Jiangxi Science and Technology Normal University, Nanchang 330013, China
| | - Qiang Xiao
- Jiangxi Province Key Laboratory of Organic Functional Molecules, Institute of Organic Chemistry, Jiangxi Science and Technology Normal University, Nanchang 330013, China
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Wu C, Shi XL, Wang L, Lyu W, Yuan P, Cheng L, Chen ZG, Yao X. Defect Engineering Advances Thermoelectric Materials. ACS NANO 2024; 18:31660-31712. [PMID: 39499807 DOI: 10.1021/acsnano.4c11732] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2024]
Abstract
Defect engineering is an effective method for tuning the performance of thermoelectric materials and shows significant promise in advancing thermoelectric performance. Given the rapid progress in this research field, this Review summarizes recent advances in the application of defect engineering in thermoelectric materials, offering insights into how defect engineering can enhance thermoelectric performance. By manipulating the micro/nanostructure and chemical composition to introduce defects at various scales, the physical impacts of diverse types of defects on band structure, carrier and phonon transport behaviors, and the improvement of mechanical stability are comprehensively discussed. These findings provide more reliable and efficient solutions for practical applications of thermoelectric materials. Additionally, the development of relevant defect characterization techniques and theoretical models are explored to help identify the optimal types and densities of defects for a given thermoelectric material. Finally, the challenges faced in the conversion efficiency and stability of thermoelectric materials are highlighted and a look ahead to the prospects of defect engineering strategies in this field is presented.
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Affiliation(s)
- Chunlu Wu
- State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China
| | - Xiao-Lei Shi
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia
| | - Lijun Wang
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia
| | - Wanyu Lyu
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia
| | - Pei Yuan
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350002, China
| | - Lina Cheng
- Institute of Green Chemistry and Molecular Engineering (IGCME), Sun Yat-sen University, Guangzhou, Guangdong 510275, China
| | - Zhi-Gang Chen
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia
| | - Xiangdong Yao
- State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China
- School of Advanced Energy and IGCME, Shenzhen Campus, Sun Yat-Sen University (SYSU), Shenzhen 518107, China
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Jiang L, Tan S, Chen R, Xian J, Li H, Zhou D, Kang H, Chen Z, Guo E, Wang T. Janus-like Structure and Resonance Level Actualized Ultralow Lattice Thermal Conductivity and Enhanced ZTave in Mg 3(Sb, Bi) 2-Based Zintls. ACS APPLIED MATERIALS & INTERFACES 2024; 16:60197-60207. [PMID: 39263912 DOI: 10.1021/acsami.4c12327] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/13/2024]
Abstract
Grain boundary (GB) engineering includes grain size and GB segregation. Grain size has been proven to affect the electrical properties of Mg3(Sb, Bi)2 at low temperatures. However, the formation mechanism of GB segregation and what kind of GB segregation is beneficial to the performance are still unclear. Here, the Ga/Bi cosegregation at GBs and Mg segregation within grains optimize the transport of electrons and phonons simultaneously. Ga/Bi cosegregation promotes the formation of Janus-like structures due to the diverse ordering tendencies of liquid Mg3Sb2 and Mg3Bi2 and the absence of a solid solution of Ga/Bi. The Janus-like structure significantly reduces the room-temperature lattice thermal conductivity by introducing diverse microdefects. Meanwhile, a coherent interface between the nano Mg segregation region and the matrix is formed, which reduces the thermal conductivity without affecting the carrier transport. Furthermore, the band structure calculations show that Ga doping introduces the resonance level, increasing the Seebeck coefficient. Finally, the lattice thermal conductivity reaches ∼0.4 W m-1 K-1, and a high average ZT of 1.21 between 323 and ∼773 K is achieved for Mg3.2Y0.02Ga0.03Sb1.5Bi0.5. This work provides guidance for improving the thermoelectric performance via designing cosegregation.
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Affiliation(s)
- Lifeng Jiang
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
| | - Shuyue Tan
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
| | - Rongchun Chen
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
| | - Jingwei Xian
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
| | - Hongrui Li
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
| | - Donghu Zhou
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
| | - Huijun Kang
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
- Ningbo Institute of Dalian University of Technology, Ningbo 315000, China
| | - Zongning Chen
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
- Ningbo Institute of Dalian University of Technology, Ningbo 315000, China
| | - Enyu Guo
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
- Ningbo Institute of Dalian University of Technology, Ningbo 315000, China
| | - Tongmin Wang
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
- Ningbo Institute of Dalian University of Technology, Ningbo 315000, China
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Jia C, Zhu B, Shi Y, Shen Y, Liu H, Tao L, Zhang L, Xue F. Thermoelectric Performance Improvement in the ZrNiSn-Based Composite via Modulating Si Addition. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9561-9568. [PMID: 38324464 DOI: 10.1021/acsami.3c18607] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
To ensure optimal performance, ZrNiSn is required to possess a low thermal conductivity and exhibit minimal bipolar effects under high-temperature conditions. This study demonstrates the integration of silicon (Si) at different doping levels into ZrNiSn. The composites consist of secondary phases of in situ ZrNiSi and Si. At a temperature of 873 K, the Seebeck coefficient experiences a 16% increase, despite the charge carrier concentration increasing three times as a result of the electron injection from ZrNiSi. The phenomenon can be elucidated by the introduction of Si, which causes energy filtering and inhibits the flow of minority charge carriers. When the doping levels in n- or p-type Si reach high levels (1019 to 1020 cm-3), the mixed interfaces ZrNiSn/ZrNiSi and ZrNiSn/Si reduce the thermal conductivity by 15%, resulting in a 50% increase in zT. These findings indicate that electron transfer in ZrNiSn can be regulated by precise doping in Si. They also demonstrate that incorporating an optimal p-type semiconductor can enhance the thermoelectric performance of n-type ZrNiSn. Additionally, a novel approach is proposed to separate electrical conductivity and the Seebeck coefficient by designing unique secondary phase interfaces.
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Affiliation(s)
- Chuang Jia
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - BeiBei Zhu
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Yangyang Shi
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Yaozhen Shen
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Hui Liu
- School of Materials Science and Engineering, Shaanxi University of Science & Technology, Xi'an 710021, China
| | - Li Tao
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Li Zhang
- School of Materials Science and Engineering, Shaanxi University of Science & Technology, Xi'an 710021, China
| | - Feng Xue
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189, China
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