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Wang SR, Fang Q, Liu XY, Fang WH, Cui G. Machine learning accelerated nonadiabatic dynamics simulations of materials with excitonic effects. J Chem Phys 2025; 162:024105. [PMID: 39774880 DOI: 10.1063/5.0248228] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/11/2024] [Accepted: 12/19/2024] [Indexed: 01/11/2025] Open
Abstract
This study presents an efficient methodology for simulating nonadiabatic dynamics of complex materials with excitonic effects by integrating machine learning (ML) models with simplified Tamm-Dancoff approximation (sTDA) calculations. By leveraging ML models, we accurately predict ground-state wavefunctions using unconverged Kohn-Sham (KS) Hamiltonians. These ML-predicted KS Hamiltonians are then employed for sTDA-based excited-state calculations (sTDA/ML). The results demonstrate that excited-state energies, time-derivative nonadiabatic couplings, and absorption spectra from sTDA/ML calculations are accurate enough compared with those from conventional density functional theory based sTDA (sTDA/DFT) calculations. Furthermore, sTDA/ML-based nonadiabatic molecular dynamics simulations on two different materials systems, namely chloro-substituted silicon quantum dot and monolayer black phosphorus, achieve more than 100 times speedup than the conventional linear response time-dependent DFT simulations. This work highlights the potential of ML-accelerated nonadiabatic dynamics simulations for studying the complicated photoinduced dynamics of large materials systems, offering significant computational savings without compromising accuracy.
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Affiliation(s)
- Sheng-Rui Wang
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Qiu Fang
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Xiang-Yang Liu
- College of Chemistry and Material Science, Sichuan Normal University, Chengdu 610068, China
| | - Wei-Hai Fang
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Ganglong Cui
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
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2
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Zhu L, Zheng Q, Wang Y, Krüger K, Wodtke AM, Bünermann O, Zhao J, Guo H, Jiang B. Mechanistic Insights into Nonadiabatic Interband Transitions on a Semiconductor Surface Induced by Hydrogen Atom Collisions. JACS AU 2024; 4:4518-4526. [PMID: 39610731 PMCID: PMC11600163 DOI: 10.1021/jacsau.4c00909] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/27/2024] [Revised: 11/05/2024] [Accepted: 11/05/2024] [Indexed: 11/30/2024]
Abstract
To understand the recently observed enigmatic nonadiabatic energy transfer for hyperthermal H atom scattering from a semiconductor surface, Ge(111)c(2 × 8), we present a mixed quantum-classical nonadiabatic molecular dynamics model based on the time-dependent evolution of Kohn-Sham orbitals and a classical path approximation. Our results suggest that facile nonadiabatic electronic transitions from the valence band to the conduction band occur selectively at the rest atom site, where surface states are doubly occupied, but not at the adatom site, where empty surface states are localized. This drastic site specificity can be attributed to the changes of the local band structure upon energetic H collisions at different surface sites, leading to transient near degeneracies and significant couplings between occupied and unoccupied orbitals at the rest atom but not at the adatom. These insights shed valuable light on the collision-induced nonadiabatic dynamics at semiconductor surfaces.
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Affiliation(s)
- Lingjun Zhu
- Key
Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department
of Chemical Physics, University of Science
and Technology of China, Hefei, Anhui 230026, China
| | - Qijing Zheng
- Key
Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department
of Physics, University of Science and Technology
of China, Hefei, Anhui 230026, China
| | - Yingqi Wang
- Department
of Chemistry and Chemical Biology, Center for Computational Chemistry, University of New Mexico, Albuquerque, New Mexico 87131, United States
| | - Kerstin Krüger
- Institute
of Physical Chemistry, Georg-August University, Göttingen 37077, Germany
| | - Alec M. Wodtke
- Institute
of Physical Chemistry, Georg-August University, Göttingen 37077, Germany
- Department
of Dynamics at Surfaces, Max-Planck-Institute
for Multidisciplinary Sciences, Göttingen 37077, Germany
- International
Center of Advanced Studies of Energy Conversion, Georg-August University, Göttingen 37077, Germany
| | - Oliver Bünermann
- Institute
of Physical Chemistry, Georg-August University, Göttingen 37077, Germany
- Department
of Dynamics at Surfaces, Max-Planck-Institute
for Multidisciplinary Sciences, Göttingen 37077, Germany
- International
Center of Advanced Studies of Energy Conversion, Georg-August University, Göttingen 37077, Germany
| | - Jin Zhao
- Key
Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department
of Physics, University of Science and Technology
of China, Hefei, Anhui 230026, China
| | - Hua Guo
- Department
of Chemistry and Chemical Biology, Center for Computational Chemistry, University of New Mexico, Albuquerque, New Mexico 87131, United States
| | - Bin Jiang
- Key
Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department
of Chemical Physics, University of Science
and Technology of China, Hefei, Anhui 230026, China
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3
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Liu XY, Chen WK, Fang WH, Cui G. Nonadiabatic Dynamics Simulations for Photoinduced Processes in Molecules and Semiconductors: Methodologies and Applications. J Chem Theory Comput 2023. [PMID: 37984502 DOI: 10.1021/acs.jctc.3c00960] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2023]
Abstract
Nonadiabatic dynamics (NAMD) simulations have become powerful tools for elucidating complicated photoinduced processes in various systems from molecules to semiconductor materials. In this review, we present an overview of our recent research on photophysics of molecular systems and periodic semiconductor materials with the aid of ab initio NAMD simulation methods implemented in the generalized trajectory surface-hopping (GTSH) package. Both theoretical backgrounds and applications of the developed NAMD methods are presented in detail. For molecular systems, the linear-response time-dependent density functional theory (LR-TDDFT) method is primarily used to model electronic structures in NAMD simulations owing to its balanced efficiency and accuracy. Moreover, the efficient algorithms for calculating nonadiabatic coupling terms (NACTs) and spin-orbit couplings (SOCs) have been coded into the package to increase the simulation efficiency. In combination with various analysis techniques, we can explore the mechanistic details of the photoinduced dynamics of a range of molecular systems, including charge separation and energy transfer processes in organic donor-acceptor structures, ultrafast intersystem crossing (ISC) processes in transition metal complexes (TMCs), and exciton dynamics in molecular aggregates. For semiconductor materials, we developed the NAMD methods for simulating the photoinduced carrier dynamics within the framework of the Kohn-Sham density functional theory (KS-DFT), in which SOC effects are explicitly accounted for using the two-component, noncollinear DFT method. Using this method, we have investigated the photoinduced carrier dynamics at the interface of a variety of van der Waals (vdW) heterojunctions, such as two-dimensional transition metal dichalcogenides (TMDs), carbon nanotubes (CNTs), and perovskites-related systems. Recently, we extended the LR-TDDFT-based NAMD method for semiconductor materials, allowing us to study the excitonic effects in the photoinduced energy transfer process. These results demonstrate that the NAMD simulations are powerful tools for exploring the photodynamics of molecular systems and semiconductor materials. In future studies, the NAMD simulation methods can be employed to elucidate experimental phenomena and reveal microscopic details as well as rationally design novel photofunctional materials with desired properties.
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Affiliation(s)
- Xiang-Yang Liu
- College of Chemistry and Material Science, Sichuan Normal University, Chengdu 610068, P. R. China
| | - Wen-Kai Chen
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
| | - Wei-Hai Fang
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
- Hefei National Laboratory, Hefei 230088, P. R. China
| | - Ganglong Cui
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
- Hefei National Laboratory, Hefei 230088, P. R. China
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4
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Armstrong ZT, Forlano KM, Roy CR, Bohlmann Kunz M, Farrell K, Pan D, Wright JC, Jin S, Zanni MT. Spatial Heterogeneity of Biexcitons in Two-Dimensional Ruddlesden-Popper Lead Iodide Perovskites. J Am Chem Soc 2023; 145:18568-18577. [PMID: 37565990 DOI: 10.1021/jacs.3c05533] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/12/2023]
Abstract
Quantum confinement in two-dimensional (2D) Ruddlesden-Popper (RP) perovskites leads to the formation of stable quasi-particles, including excitons and biexcitons, the latter of which may enable lasing in these materials. Due to their hybrid organic-inorganic structures and the solution phase synthesis, microcrystals of 2D RP perovskites can be quite heterogeneous, with variations in excitonic and biexcitonic properties between crystals from the same synthesis and even within individual crystals. Here, we employ one- and two-quantum two-dimensional white-light microscopy to systematically study the spatial variations of excitons and biexcitons in microcrystals of a series of 2D RP perovskites BA2MAn-1PbnI3n+1 (n = 2-4, BA= butylammonium, MA = methylammonium). We find that the average biexciton binding energy of around 60 meV is essentially independent of the perovskite layer thickness (n). We also resolve spatial variations of the exciton and biexciton energies on micron length scales within individual crystals. By comparing the one-quantum and two-quantum spectra at each pixel, we conclude that biexcitons are more sensitive to their environments than excitons. These results shed new light on the ways disorder can modify the energetic landscape of excitons and biexcitons in RP perovskites and how biexcitons can be used as a sensitive probe of the microscopic environment of a semiconductor.
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Affiliation(s)
- Zachary T Armstrong
- Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Kristel M Forlano
- Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Chris R Roy
- Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Miriam Bohlmann Kunz
- Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Kieran Farrell
- Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Dongxu Pan
- Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - John C Wright
- Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Song Jin
- Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Martin T Zanni
- Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
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Guo S, Li Y, Mao Y, Tao W, Bu K, Fu T, Zhao C, Luo H, Hu Q, Zhu H, Shi E, Yang W, Dou L, Lü X. Reconfiguring band-edge states and charge distribution of organic semiconductor-incorporated 2D perovskites via pressure gating. SCIENCE ADVANCES 2022; 8:eadd1984. [PMID: 36322656 PMCID: PMC9629702 DOI: 10.1126/sciadv.add1984] [Citation(s) in RCA: 30] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/26/2022] [Accepted: 09/13/2022] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) semiconductor heterostructures are key building blocks for many electronic and optoelectronic devices. Reconfiguring the band-edge states and modulating their interplay with charge carriers at the interface in a continuous manner have long been sought yet are challenging. Here, using organic semiconductor-incorporated 2D halide perovskites as the model system, we realize the manipulation of band-edge states and charge distribution via mechanical-rather than chemical or thermal-regulation. Compression induces band-alignment switching and charge redistribution due to the different pressure responses of organic and inorganic building blocks, giving controllable emission properties of 2D perovskites. We propose and demonstrate a "pressure gating" strategy that enables the control of multiple emission states within a single material. We also reveal that band-alignment transition at the organic-inorganic interface is intrinsically not well resolved at room temperature owing to the thermally activated transfer and shuffling of band-edge carriers. This work provides important fundamental insights into the energetics and carrier dynamics of hybrid semiconductor heterostructures.
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Affiliation(s)
- Songhao Guo
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China
| | - Yahui Li
- School of Engineering, Westlake University, Hangzhou, China
| | - Yuhong Mao
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China
| | - Weijian Tao
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, China
| | - Kejun Bu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China
| | - Tonghuan Fu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China
| | - Chang Zhao
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, China
| | - Hui Luo
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China
| | - Qingyang Hu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China
| | - Haiming Zhu
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, China
| | - Enzheng Shi
- School of Engineering, Westlake University, Hangzhou, China
| | - Wenge Yang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China
| | - Letian Dou
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, IN, USA
| | - Xujie Lü
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China
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6
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Zhu W, Zhou K, Fo Y, Li Y, Guo B, Zhang X, Zhou X. Rational design of small molecule hole-transporting materials with a linear π-bridge for highly efficient perovskite solar cells. Phys Chem Chem Phys 2022; 24:18793-18804. [PMID: 35904025 DOI: 10.1039/d2cp02036j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Developing highly efficient small molecule hole-transporting materials (HTMs) to improve the performance of devices is one of the hot topics in the progress of perovskite solar cells (PSCs). In this work, a series of molecules are designed by utilizing benzocyclobutadiene (C1), bicyclo[6.2.0]decapentaene (C2), naphthalene (C3), biphenylene (C4), fluorene (C5), and azulene (C6) as the π-cores, and p-methoxydiphenylamine (R1), p-methoxytriphenylamine (R2) and p-methoxydiphenylamine-substituted carbazole (R3) as the peripheral groups. For isolated molecules, frontier molecule orbitals, absorption and emission spectra, Stokes shift, stability, solubility, and hole mobility are assessed by density functional theory calculations along with the Marcus theory of electron transfer. The molecules adsorbed on the surface of CH3NH3PbI3 are used to simulate the interfacial properties between HTMs and perovskites. Our results indicate that varying the central bridge and the terminal groups has a remarkable influence on the properties. The designed R2-Cn (n = 3, 4, 5) have deeper HOMO levels, stronger absorption in the UV region, and larger Stokes shift than Spiro-OMeTAD. They also possess good solubility, stability, and hole mobility. The proper alignment of interfacial energy levels ensures the transfer of holes from CH3NH3PbI3 to the studied molecules and blocks the backflow of electrons simultaneously. Significant charge redistributions around the interfacial region benefit the separation and transfer photogenerated electron-hole pairs. The results of the present study can be further employed in the process of synthesizing new HTMs with promising features.
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Affiliation(s)
- Wenjing Zhu
- College of Environment and Chemical Engineering, Dalian University, Dalian 116622, Liaoning, China.
| | - Keyu Zhou
- College of Environment and Chemical Engineering, Dalian University, Dalian 116622, Liaoning, China.
| | - Yumeng Fo
- College of Environment and Chemical Engineering, Dalian University, Dalian 116622, Liaoning, China.
| | - Yi Li
- College of Environment and Chemical Engineering, Dalian University, Dalian 116622, Liaoning, China.
| | - Bin Guo
- College of Environment and Chemical Engineering, Dalian University, Dalian 116622, Liaoning, China.
| | - Xinyu Zhang
- College of Environment and Chemical Engineering, Dalian University, Dalian 116622, Liaoning, China.
| | - Xin Zhou
- College of Environment and Chemical Engineering, Dalian University, Dalian 116622, Liaoning, China.
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Lei Y, Zheng Z, Vasquez L, Zhao J, Ma J, Ma H. Enhanced Electron Transfer and Spin Flip through Spin-Orbital Couplings in Organic/Inorganic Heterojunctions: A Nonadiabatic Surface Hopping Simulation. J Phys Chem Lett 2022; 13:4840-4848. [PMID: 35616399 DOI: 10.1021/acs.jpclett.2c01177] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The circumstances of transferred electrons across organic/inorganic interfaces have attracted intensive interest because of the distinctive electronic structure properties of those two components. Leveraging ab initio nonadiabatic molecular dynamics methods in conjunction with spin dynamics induced by spin-orbital couplings (SOCs), this study reports two competitive channels during photoinduced dynamical processes in the prototypical ZnPc/monolayer MoS2 heterojunction. Interestingly, the electron-transfer and relaxation processes occur simultaneously because of the enhancement of electron-phonon couplings and expansion of dynamical pathways by SOCs, suggesting that the electron-transfer rate and relaxation processes can be tuned by SOCs, hence yielding the performance promotion of photovoltaic and photocatalytic devices. Additionally, approximately half of the transferred electrons flip their spin within 1.6 ps because of strong SOCs in MoS2, achieving great agreement with experimental measurements. This investigation provides instructive perspectives for designing novel devices and applications based on organic/inorganic heterojunctions, demonstrating the importance of spin dynamics simulations in exploring sophisticated photoinduced processes in materials.
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Affiliation(s)
- Yuli Lei
- Jiangsu Key Laboratory of Vehicle Emissions Control, Key Laboratory of Mesoscopic Chemistry of Ministry of Education, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Zhenfa Zheng
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Luis Vasquez
- Jiangsu Key Laboratory of Vehicle Emissions Control, Key Laboratory of Mesoscopic Chemistry of Ministry of Education, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Jin Zhao
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jing Ma
- Jiangsu Key Laboratory of Vehicle Emissions Control, Key Laboratory of Mesoscopic Chemistry of Ministry of Education, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Haibo Ma
- Jiangsu Key Laboratory of Vehicle Emissions Control, Key Laboratory of Mesoscopic Chemistry of Ministry of Education, Chemistry and Biomedicine Innovation Center (ChemBIC), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
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8
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Xie BB, Jia PK, Wang KX, Chen WK, Liu XY, Cui G. Generalized Ab Initio Nonadiabatic Dynamics Simulation Methods from Molecular to Extended Systems. J Phys Chem A 2022; 126:1789-1804. [PMID: 35266391 DOI: 10.1021/acs.jpca.1c10195] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Nonadiabatic dynamics simulation has become a powerful tool to describe nonadiabatic effects involved in photophysical processes and photochemical reactions. In the past decade, our group has developed generalized trajectory-based ab initio surface-hopping (GTSH) dynamics simulation methods, which can be used to describe a series of nonadiabatic processes, such as internal conversion, intersystem crossing, excitation energy transfer and charge transfer of molecular systems, and photoinduced nonadiabatic carrier dynamics of extended systems with and without spin-orbit couplings. In this contribution, we will first give a brief introduction to our recently developed methods and related numerical implementations at different computational levels. Later, we will present some of our latest applications in realistic systems, which cover organic molecules, biological proteins, organometallic compounds, periodic organic and inorganic materials, etc. Final discussion is given to challenges and outlooks of ab initio nonadiabatic dynamics simulations.
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Affiliation(s)
- Bin-Bin Xie
- Hangzhou Institute of Advanced Studies, Zhejiang Normal University, 1108 Gengwen Road, Hangzhou 311231, Zhejiang, P. R. China
| | - Pei-Ke Jia
- Hangzhou Institute of Advanced Studies, Zhejiang Normal University, 1108 Gengwen Road, Hangzhou 311231, Zhejiang, P. R. China
| | - Ke-Xin Wang
- Hangzhou Institute of Advanced Studies, Zhejiang Normal University, 1108 Gengwen Road, Hangzhou 311231, Zhejiang, P. R. China
| | - Wen-Kai Chen
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
| | - Xiang-Yang Liu
- College of Chemistry and Material Science, Sichuan Normal University, Chengdu 610068, Sichuan, P. R. China
| | - Ganglong Cui
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
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9
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Ab initio Nonadiabatic Dynamics of Semiconductor Nanomaterials via Surface Hopping Method. CHINESE J CHEM PHYS 2022. [DOI: 10.1063/1674-0068/cjcp2111247] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
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