Imaging the Photoionization of Individual CdSe/CdS Core−Shell Nanocrystals on n- and p-Type Silicon Substrates with Thin Oxides

Built-in potential and charge distribution within single heterostructured nanorods measured by scanning Kelvin probe microscopy

The electrostatic potential distribution across single, isolated, colloidal heterostructured nanorods (NRs) with component materials expected to form a p-n junction within each NR has been measured using scanning Kelvin probe microscopy (SKPM). We compare CdS to bicomponent CdS-CdSe, CdS-PbSe, and CdS-PbS NRs prepared via different synthetic approaches to corroborate the SKPM assignments. The CdS-PbS NRs show a sharp contrast in measured potential across the material interface. We find the measured built-in potential within an individual NR to be attenuated by long-range electrostatic forces between the sample substrate, cantilever, and the measuring tip. Surface potential images were deconvoluted to yield built-in potentials ranging from 375 to 510 meV in the heterostructured NRs. We deduce the overall built-in potential as well as the charge distribution across each segment of the heterostructured NRs by combining SKPM data with simulations of the system.

Laser-induced charge separation in CdSe nanowires

A combination of electrostatic force microscopy and optical microscopy was used to investigate the charge state of individual CdSe nanowires upon local illumination with a focused laser beam. The nanowires were found to be positively charged at the excitation spot and negatively charged at the distant end(s). For high laser powers, the amount of accumulated charges increases logarithmically with the laser power. These effects are described by a diffusion-based model where the results are in good agreement with the experimentally observed effects. On the basis of this model the charge imbalance along the nanowire should establish in the course of nanoseconds. The net charge separation within homogeneous nanowires upon local illumination is of importance for several electronic devices.

Voltage controlled photoluminescence blinking in CdSe nano-particles

Voltage controlled photoluminescence (PL) blinking behavior in CdSe nano-particles (NPs) is studied. The NPs are sandwiched between a p-type silicon substrate and a thin Au electrode, which serve respectively as source and drain electrodes. The blinking PL from the NPs can be controlled by the bias voltage across the two electrodes. However, luminescence diminishes when photo excitation power is weak or bias is lower than a threshold voltage. The observed PL blinking is explained by a circuit model, which involves charge tunneling, Fowler-Nordheim (F-N) emission, and charging effect. The blinking intensity is controlled by the number of F-N emitted electrons whereas the pulse interval is associated with the time required for hole accumulation in the NPs. The intensity of luminescence blinking for NP clusters is found to be much higher compared to that of blinking from isolated NPs. This is explained by a collective recombination of F-N emitted electrons and accumulated holes in the NP clusters. This study provides a simple way of controlling PL blinking.

Surface states in the photoionization of high-quality CdSe core/shell nanocrystals

We use electric force microscopy (EFM) to study single nanocrystal photoionization in two classes of high-quality nanocrystals whose exciton luminescence quantum yields approach unity in solution. The CdSe/CdS/ZnS core/shell nanocrystals do not photoionize, while the CdSe/CdS nanocrystals do show substantial photoionization. This verifies the theoretical prediction that the ZnS shell confines the excited electron within the nanocrystal. Despite the high luminescence quantum yield, photoionization varies substantially among the CdSe/CdS nanocrystals. We have studied the nanocrystal photoionization with both UV (396 nm) and green (532 nm) light, and we have found that the magnitude of the charge due to photoionization per absorbed photon is greater for UV excitation than for green excitation. A fraction of the photoionization occurs directly via a "hot electron" process, using trap states that are either on the particle surface, within the ligand sphere, or within the silicon oxide layer. This must occur without relaxation to the thermalized, lowest-energy, emitting exciton. We discuss the occurrence of hot carrier processes that are common to photoionization, luminescence blinking, and the fast transient optical absorption that is associated with multiple exciton generation MEG studies.

Electrostatic force microscopy study of single Au-CdSe hybrid nanodumbbells: evidence for light-induced charge separation

Electrostatic force microscopy is used to study light-induced charging in single hybrid Au-CdSe nanodumbbells. Upon illumination, nanodumbbells show negative charging, which is in contrast with CdSe rods and Au particles that show positive charging. This different behavior is attributed to charge separation in the nanodumbbells, where after excitation the electron is transferred to the gold tips and the hole is subsequently filled through tunneling interactions with the substrate. The process of light-induced charge separation at the metal-semiconductor interface is key for the photocatalytic activity of such hybrid metal-semiconductor nanostructures.

Enhanced charge storage capability of Ge/GeO(2) core/shell nanostructure

A Ge/GeO(2) core/shell nanostructure embedded in an Al(2)O(3) gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO(2) core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO(2) shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering.

Self-assembly of 1-D organic semiconductor nanostructures

This review focuses on the molecular design and self-assembly of a new class of crowded aromatics that form 1-D nanostructures via hydrogen bonding and pi-pi interactions. These molecules have a permanent dipole moment that sums as the subunits self assemble into molecular stacks. The assembly of these molecular stacks can be directed with electric fields. Depending on the nature of the side-chains, molecules can obtain the face-on or edge-on orientation upon the deposition onto a surface via spin cast technique. Site-selective steady state fluorescence, time-resolved fluorescence, and various types of scanning probe microscopy measurements detail the intermolecular interactions that drive the aromatic molecules to self-assemble in solution to form well-ordered columnar stacks. These nanostructures, formed in solution, vary in their number, size, and structure depending on the functional groups, solvent, and concentration used. Thus, the substituents/side-groups and the proper choice of the solvent can be used to tune the intermolecular interactions. The 1-D stacks and their aggregates can be easily transferred by solution casting, thus allowing a simple preparation of molecular nanostructures on different surfaces.

Photoinduced interfacial charging and "explosion" of monolayer pentacene islands

Electrostatic force microscopy shows that the electric field gradients above pentacene monolayer islands on 2-nm SiO2/Si substrates, in a dark, dry nitrogen environment, display a wide distribution of signs and magnitude that is dependent on sample history. Under 12 mW/cm2 green (532 nm) illumination, pentacene islands accumulate positive charge because of photoexcited electron transfer across the oxide to the Si substrate. At a strong illumination of 60 mW/cm2, pentacene islands reform into small spherical particles, apparently because the positive charge Coulomb repulsion energy becomes comparable to the cohesive energy of the pentacene monolayer.

Mechanisms of fluorescence blinking in semiconductor nanocrystal quantum dots

The light-induced spectral diffusion and fluorescence intermittency (blinking) of semiconductor nanocrystal quantum dots are investigated theoretically using a diffusion-controlled electron-transfer (DCET) model, where a light-induced one-dimensional diffusion process in energy space is considered. Unlike the conventional electron-transfer reactions with simple exponential kinetics, the model naturally leads to a power-law statistics for the intermittency. We formulate a possible explanation for the spectral broadening and its proportionality to the light energy density, the -32 power law for the blinking statistics of the fluorescence intermittency, the breakdown of the power-law behavior with a bending tail for the "light" periods, a lack of bending tail for the "dark" periods (but would eventually appear at later times), and the dependence of the bending tail on light intensity and temperature. This DCET model predicts a critical time t(c) (a function of the electronic coupling strength and other quantities), such that for times shorter than t(c) the exponent for the power law is -12 instead of -32. Quantitative analyses are made of the experimental data on spectral diffusion and on the asymmetric blinking statistics for the "on" and "off" events. Causes for deviation of the exponent from the ideal value of -32 are also discussed. Several fundamental properties are determined from the present experimental data, the diffusion correlation time, the Stokes shift, and a combination of other molecular-based quantities. Specific experiments are suggested to test the model further, extract other molecular properties, and elucidate more details of the light-induced charge-transfer dynamics in quantum dots.

What Is the Effective Charge of TGA-Stabilized CdTe Nanocolloids?

The surface charge of semiconductor nanoparticles, Q, is an important parameter which determines their electrokinetic behavior, stability in water and polar solvents, functions of optical and electronic devices, self-assembly properties, and interactions with cell membranes. We have developed a simple method for quantitative determination of Q in their native aqueous environment. The method does not require the knowledge of exact atomic structure or make assumptions about effects of drying on charge distribution. The method is based on titration of nanoparticle dispersion with a solution of oppositely charged polyelectrolyte. The point of complete neutralization is recognized as an inflection point on the dependence of fluorescence intensity on the amount of polyelectrolyte added. Thioglycolic acid-stabilized CdTe nanoparticles 2 nm in diameter were found to carry an average Q from -2.6 to -5.5 for pH 7.5 to 10, respectively. This charge is found to be smaller than that calculated theoretically for an analogous structure (i.e., Q = -8), presumably due to adsorption of Cd(2+) ions on the stabilizer shell and on Te atoms with unsaturated valence located on the side planes of CdTe tetrahedrons.

Photoinduced Fluorescence Enhancement in Mono- and Multilayer Films of CdSe/ZnS Quantum Dots: Dependence on Intensity and Wavelength of Excitation Light

Photoinduced fluorescence enhancement (PFE) behavior in mono- and multilayer films of CdSe/ZnS core/shell quantum dots (QDs) on glass substrates was investigated using various intensities and wavelengths of excitation light. CdSe/ZnS QDs capped with tri-n-octylphosphine oxide (TOPO) were produced using colloidal chemical synthesis, and mono- and multilayer QD films were fabricated on glass substrates by spin coating. The fluorescence quantum yield (QY) of the QD monolayer was greatly enhanced by continuous irradiation in a dry nitrogen atmosphere, whereas the QD multilayer showed a small enhancement of the QY or fluorescence intensity decay. In addition, the shorter the excitation wavelength, the more pronounced the PFE. The rate of increase of the QY increased with decreasing excitation intensities at any wavelength. These dependences were observed in both mono- and multilayer films. Our results suggest that the photoejection of electrons to the substrate is the origin of PFE. Assuming the charging effect of electrons trapped in the substrate, a phenomenological model is proposed to explain all of the experimental results, that is, the dependence on the intensity and wavelength of excitation light and the qualitative difference in PFE behavior between mono- and multilayer films.