Molecular Orientation and Film Morphology of Pentacene on Native Silicon Oxide Surface

Highly Ordered Small Molecule Organic Semiconductor Thin-Films Enabling Complex, High-Performance Multi-Junction Devices

Organic semiconductors have opened up many new electronic applications, enabled by properties like flexibility, low-cost manufacturing, and biocompatibility, as well as improved ecological sustainability due to low energy use during manufacturing. Most current devices are made of highly disordered thin-films, leading to poor transport properties and, ultimately, reduced device performance as well. Here, we discuss techniques to prepare highly ordered thin-films of organic semiconductors to realize fast and highly efficient devices as well as novel device types. We discuss the various methods that can be implemented to achieve such highly ordered layers compatible with standard semiconductor manufacturing processes and suitable for complex devices. A special focus is put on approaches utilizing thermal treatment of amorphous layers of small molecules to create crystalline thin-films. This technique has first been demonstrated for rubrene─an organic semiconductor with excellent transport properties─and extended to some other molecular structures. We discuss recent experiments that show that these highly ordered layers show excellent lateral and vertical mobilities and can be electrically doped to achieve high n- and p-type conductivities. With these achievements, it is possible to integrate these highly ordered layers into specialized devices, such as high-frequency diodes or completely new device principles for organics, e.g., bipolar transistors.

A comprehensive picture of roughness evolution in organic crystalline growth: the role of molecular aspect ratio

Exploiting the capabilities of organic semiconductors for applications ranging from light-emitting diodes to photovoltaics to lasers relies on the creation of ordered, smooth layers for optimal charge carrier mobilities and exciton diffusion. This, in turn, creates a demand for organic small molecules that can form smooth thin film crystals via homoepitaxy. We have studied a set of small-molecule organic semiconductors that serve as templates for homoepitaxy. The surface roughness of these materials is measured as a function of adlayer film thickness from which the growth exponent (β) is extracted. Notably, we find that three-dimensional molecules that have low molecular aspect ratios (AR) tend to remain smooth as thickness increases (small β). This is in contrast to planar or rod-like molecules with high AR that quickly roughen (large β). Molecular dynamics simulations find that the Ehrlich-Schwöbel barrier (E_ES) alone is unable to fully explain this trend. We further investigated the mobility of ad-molecules on the crystalline surface to categorize their diffusion behaviors and the effects of aggregation to account for the different degrees of roughness that we observed. Our results suggest that low AR molecules have low molecular mobility and moderate E_ES which creates a downward funneling effect leading to smooth crystal growth.

Impact of Nanomorphology on Surface Doping of Organic Semiconductors: The Pentacene-C60F48 Interface

Establishing the rather complex correlation between the structure and the charge transfer in organic-organic heterostructures is of utmost importance for organic electronics and requires spatially resolved structural, chemical, and electronic details. Insight into this issue is provided here by combining atomic force microscopy, Kelvin probe force microscopy, photoemission electron microscopy, and low-energy electron microscopy for investigating a case study. We select the interface formed by pentacene (PEN), benchmark among the donor organic semiconductors, and a p-type dopant from the family of fluorinated fullerenes. As for Buckminsterfullerene (C₆₀), the growth of its fluorinated derivative C₆₀F₄₈ is influenced by the thickness and crystallinity of the PEN buffer layer, but the behavior is markedly different. We provide a microscopic description of the C₆₀F₄₈/PEN interface formation and analyze the consequences in the electronic properties of the final heterostructure. For just one single layer of PEN, a laterally complete but noncompact C₆₀F₄₈/PEN interface is created, importantly affecting the surface work function. Nonetheless, from the very beginning of the second layer formation, the presence of epitaxial and nonepitaxial PEN domains dramatically influences the growth dynamics and extremely well packed two-dimensional C₆₀F₄₈ islands develop. Insightful elemental maps of the C₆₀F₄₈/PEN surface spatially resolve the nonuniform distribution of the dopant molecules, which leads to a heterogeneous work function landscape.

Pentacene Crystal Growth on Silica and Layer-Dependent Step-Edge Barrier from Atomistic Simulations

Understanding and controlling the growth of organic crystals deposited from the vapor phase is important for fundamental materials science and necessary for applications in pharmaceutical and organic electronics industries. Here, this process is studied for the paradigmatic case of pentacene on silica by means of a specifically tailored computational approach inspired by the experimental vapor deposition process. This scheme is able to reproduce the early stages of the thin-film formation, characterized by a quasi layer-by-layer growth, thus showcasing its potential as a tool complementary to experimental techniques for investigating organic crystals. Crystalline islands of standing molecules are formed at a critical coverage, as a result of a collective reorientation of disordered aggregates of flat-lying molecules. The growth then proceeds by sequential attachment of molecules at the cluster and then terrace edges. Free-energy calculations allowed us to characterize the step-edge barrier for descending the terraces, a fundamental parameter for growth models for which only indirect experimental measurements are available. The barrier is found to be layer-dependent (approximately 1 kcal/mol for the first monolayer on silica, 2 kcal/mol for the second monolayer) and to extend over a distance comparable with the molecular length.

The correlations of the electronic structure and film growth of 2,7-diocty[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) on SiO2

Combining ultraviolet photoemission spectroscopy (UPS), X-ray photoemission spectroscopy (XPS), atomic force microscopy (AFM) and small angle X-ray diffraction (SAXD) measurements, we perform a systematic investigation on the correlations of the electronic structure, film growth and molecular orientation of 2,7-diocty[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) on silicon oxide (SiO₂). AFM analysis reveals a phase transition of disorderedly oriented molecules in clusters in thinner films to highly ordered standing-up molecules in islands in thicker films. SAXD peaks consistently support the standing-up configuration in islands. The increasing ordering of the molecular orientation with film thickness contributes to the changing of the shape and lowering of the leading edge of the highest occupied molecular orbital (HOMO). The end methyl of the highly ordered standing molecules forms an outward pointing dipole layer which makes the work function (WF) decrease with increasing thickness. The downward shift of the HOMO and a decrease of WF result in unconventional downward band bending and decreased ionization potential (IP). The correlations of the orientation ordering of molecules, film growth and interface electronic structures provide a useful design strategy to improve the performance of C8-BTBT thin film based field effect transistors.

Hydrogen-bonding-facilitated layer-by-layer growth of ultrathin organic semiconducting films

We demonstrated that the layer-by-layer growth of thin film crystals of conjugated organic molecules is facilitated by their hydrogen-bonding capabilities. We synthesized bis(3-hydroxypropyl)-sexithiophene (bHP6T), which includes two hydroxyalkyl groups that promote interlayer and intermolecular molecular interactions during the crystal growth process. Under the optimal deposition conditions, the crystals grew in a nearly perfect layer-by-layer mode on the solid substrate surfaces, enabling the formation of uniform charge transporting films as thin as a few monolayers. A thin film transistor device prepared from a bHP6T film only 9 nm thick exhibited a charge carrier mobility well above 1 × 10(-2) cm(2)/(V s) and an on/off ratio exceeding 1 × 10(4). These properties are better than the properties of other sexithiophene-based devices yet reported. The devices exhibited enhanced stability under atmospheric conditions, and they functioned properly, even after storage for more than 2 months.

Hybrids of organic molecules and flat, oxide-free silicon: high-density monolayers, electronic properties, and functionalization

Since the first report of Si-C bound organic monolayers on oxide-free Si almost two decades ago, a substantial amount of research has focused on studying the fundamental mechanical and electronic properties of these Si/molecule surfaces and interfaces. This feature article covers three closely related topics, including recent advances in achieving high-density organic monolayers (i.e., atomic coverage >55%) on oxide-free Si(111) substrates, an overview of progress in the fundamental understanding of the energetics and electronic properties of hybrid Si/molecule systems, and a brief summary of recent examples of subsequent functionalization on these high-density monolayers, which can significantly expand the range of applicability. Taken together, these topics provide an overview of the present status of this active area of research.

Effect of oxygen plasma treatment on crystal growth mode at pentacene/Ni interface in organic thin-film transistors

We report how treatment of nickel (Ni) with O(2) plasma affects the polarity of Ni surface, crystallinity of pentacene film on the Ni, and electrical properties of pentacene organic thin-film transistors (OTFTs) that use Ni as source-drain electrodes. The polar component of surface energy in Ni surface increased from 8.1 to 43.3 mJ/m(2) after O(2)-plasma treatment for 10 s. From X-ray photoelectron spectra and secondary electron emission spectra, we found that NiO(x) was formed on the O(2)-plasma-treated Ni surface and the work function of O(2)-plasma-treated Ni was 0.85 eV higher than that of untreated Ni. X-ray diffraction and atomic force microscopy measurements showed that pentacene molecules are well aligned as a thin-film and grains grow much larger on O(2)-plasma-treated Ni than on untreated Ni. This change in the growth mode is attributed to the reduction of interaction energy between pentacene and Ni due to formation of oxide at the Ni/pentacene interface. Thus, O(2)-plasma treatment promoted the growth of well-ordered pentacene film and lowered both the hole injection barrier and the contact resistance between Ni and pentacene by forming NiO(x), enhancing the electrical property of bottom-contact OTFTs.

Structural order in perfluoropentacene thin films and heterostructures with pentacene

Synchrotron x-ray diffraction reciprocal space mapping was performed on perfluoropentacene (PFP) thin films on SiO2 in order to determine the crystal structure of a novel, substrate-induced thin film phase to be monoclinic with unit cell parameters of a = 15.76 +/- 0.02 A, b = 4.51 +/- 0.02 A, c = 11.48 +/- 0.02 A, and beta = 90.4 +/- 0.1 degrees . Moreover, layered and co-deposited heterostructures of PFP and pentacene (P) were investigated by specular and grazing-incidence x-ray diffraction, atomic force microscopy, and Fourier-transform infrared spectroscopy. For a ca. three-monolayers-thick PFP film grown on a P underlayer, slightly increased lattice spacing was found. In contrast, co-deposited P/PFP films form a new mixed-crystal structure with no detectable degree of phase separation. These results highlight the structural complexity of these technically relevant molecular heterojunctions for use in organic electronics.

Field-Force Alignment of Disc-Type π Systems

The ability of electric fields to align nonpolar semiconducting molecules was demonstrated using hexa(para-n-dodecylphenyl)hexabenzocoronene (HBC-PhC12) as a model compound. A solution of HBC-PhC12 was applied to a glass surface by drop-casting and the molecules were oriented into highly ordered structures by an electric field during solvent evaporation. Atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) showed a long-range alignment where the disclike molecules were organized in columns perpendicular to the direction of the imposed electric field. The high anisotropy of the uniaxially aligned films was characterized by cross-polarized light microscopy. The birefringence of the HBC-PhC12 films was related to the presence of extended domains of unidirectionally aligned columns in which the aromatic cores of the HBC-PhC12 molecules were perpendicular to the columnar axis. The packing and the arrangement of the molecules in the field-force ordered films were proven by electron diffraction and X-ray analyses.

Reaction of alkenes with hydrogen-terminated and photooxidized silicon surfaces. A comparison of thermal and photochemical processes

Reagentless micropatterning of hydrogen-terminated Si(111) via UV irradiation through a photomask has proven to be a convenient strategy for the preparation of ordered bicomponent monolayers. The success of this technique relies upon the differential rate of reaction of an alkene with the hydrogen-terminated and photooxidized regions of the surface. Monolayer formation can be accomplished under either thermal or photochemical conditions. It was observed that, after 3 h, reaction in neat alkene solution irradiation (Rayonet, 300 nm) afforded the expected patterned surface, while thermal conditions (150 degrees C) resulted in a partial loss of pattern fidelity. Monolayer properties and formation were studied on oxidized and hydrogen-terminated silicon under thermal and photochemical initiation, by contact angle, ellipsometry, Fourier transform infrared spectroscopy, high-resolution electron energy loss spectroscopy, and X-ray photoelectron spectroscopy. Results show that alkenes add to silanol groups on the silica surface in a manner consistent with acid catalysis: once attached to the surface, the silica oxidized the hydrocarbon.