Dimensionality Dependence of Optical Properties and Quantum Confinement Effects of Hydrogenated Silicon Nanostructures

The effect of particle size on the optical and electronic properties of hydrogenated silicon nanoparticles

We use a combination of many-body perturbation theory and time-dependent density functional theory to study the optical and electronic properties of hydrogen terminated silicon nanoparticles. We predict that the lowest excited states of these silicon nanoparticles are excitonic in character and that the corresponding excitons are completely delocalised over the volume of the particle. The size of the excitons is predicted to increase proportionally with the particle size. Conversely, we predict that the fundamental gap, the optical gap, and the exciton binding energy increase with decreasing particle size. The exciton binding energy is predicted to counter-act the variation in the fundamental gap and hence to reduce the variation of the optical gap with particle size. The variation in the exciton binding energy itself is probably caused by a reduction in the dielectric screening with decreasing particle size. The intensity of the excited state corresponding to the optical gap and other low energy excitations are predicted to increase with decreasing particle size. We explain this increase in terms of the 'band structure' becoming smeared out in reciprocal space with decreasing particle size, increasing the 'overlap' between the occupied and unoccupied quasiparticle states and thus, the oscillator strength. Fourier transforms of the lowest excitons show that they inherit the periodicity of the frontier quasiparticle states. This, combined with the delocalisation of the exciton and the large exciton binding energy, means that the excitons in silicon nanoparticles combine aspects of Wannier-Mott, delocalisation and effect of periodicity of the underlying structure, and Frenkel, large exciton binding energy, excitons.

The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effects

Quantum confinement (QC) typically assumes a sharp interface between a nanostructure and its environment, leading to an abrupt change in the potential for confined electrons and holes. When the interface is not ideally sharp and clean, significant deviations from the QC rule appear and other parameters beyond the nanostructure size play a considerable role. In this work we elucidate the role of the interface on QC in Ge quantum dots (QDs) synthesized by rf-magnetron sputtering or plasma enhanced chemical vapor deposition (PECVD). Through a detailed electron energy loss spectroscopy (EELS) analysis we investigated the structural and chemical properties of QD interfaces. PECVD QDs exhibit a sharper interface compared to sputter ones, which also evidences a larger contribution of mixed Ge-oxide states. Such a difference strongly modifies the QC strength, as experimentally verified by light absorption spectroscopy. A large size-tuning of the optical bandgap and an increase in the oscillator strength occur when the interface is sharp. A spatially dependent effective mass (SPDEM) model is employed to account for the interface difference between Ge QDs, pointing out a larger reduction in the exciton effective mass in the sharper interface case. These results add new insights into the role of interfaces on confined systems, and open the route for reliable exploitation of QC effects.