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For: Åkermark T, Ganem JJ, Trimaille I, Vickridge I, Rigo S. Temperature and Pressure Dependence of the Oxygen Exchange at the SiO2−Si Interface, O2 ↔ SiO2, during Dry Thermal Oxidation of Silicon. J Phys Chem B 1999. [DOI: 10.1021/jp991788e] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2022]

For:	Åkermark T, Ganem JJ, Trimaille I, Vickridge I, Rigo S. Temperature and Pressure Dependence of the Oxygen Exchange at the SiO2−Si Interface, O2 ↔ SiO2, during Dry Thermal Oxidation of Silicon. J Phys Chem B 1999. [DOI: 10.1021/jp991788e] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2022]

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(The first 100,000 artilces are displayed in RCA.)