Hidden electrochemistry in the thermal grafting of silicon surfaces from grignard reagents

Static and dynamic electronic characterization of organic monolayers grafted on a silicon surface

Organic layers chemically grafted on silicon offer excellent interfaces that may open up the way for new organic-inorganic hybrid nanoelectronic devices. However, technological achievements rely on the precise electronic characterization of such organic layers. We have prepared ordered grafted organic monolayers (GOMs) on Si(111), sometimes termed self-assembled monolayers (SAMs), by a hydrosilylation reaction with either a 7-carbon or an 11-carbon alkyl chain, with further modification to obtain amine-terminated surfaces. X-ray photoelectron spectroscopy (XPS) is used to determine the band bending (∼ 0.3 eV), and ultraviolet photoelectron spectroscopy (UPS) to measure the work function (∼ 3.4 eV) and the HOMO edge. Scanning tunneling microscopy (STM) confirms that the GOM surface is clean and smooth. Finally, conductive AFM is used to measure electron transport through the monolayer and to identify transition between the tunneling and the field emission regimes. These organic monolayers offer a promising alternative to silicon dioxide thin films for fabricating metal-insulator-semiconductor (MIS) junctions. We show that gold nanoparticles can be covalently attached to mimic metallic nano-electrodes and that the electrical quality of the GOMs is completely preserved in the process.

Single Charge Electronics with Gold Nanoparticles and Organic Monolayers

Gold nanoparticles can be used as ultimate electrical materials for storing electrons or controlling their flow for the next generation nano-electronic devices. These particles are the core element of assemblies where the electrical current is reduced to the smallest possible since electrons are controlled one by one by using the Coulomb blockade phenomenon. We prepared colloidal gold nanoparticles beteween 4 and 15 nm and grafted them on a grafted organic monolayer (GOM) on silicon. GOM are highly ordered monolayers prepared by hydrosilylation of alkene molecules and subsequently modified with an amine group so that gold nanoparticles can be firmly immobilized on top of the layer. We discuss several electrical properties at a single electron level. Using the conductive tip of KPFM, we were also able to reveal the spontaneous charging behavior of the gold nanoparticles so that the local work function of a 10 nm gold nanoparticle is only 3.7 eV. By placing an STM tip above a nanoparticle, Coulomb blockade allows controlling the number of electrons simultaneously injected in the nanoparticle. This opens the way for new kinds of single electron memories or single electron transistors.

Substituent effects on the kinetics of bifunctional styrene SAM formation on H-terminated Si

Self-assembled monolayers (SAMs) on metal and semiconductor surfaces are of interest in electronic devices, molecular and biosensors, and nanostructured surface preparation. Bifunctionalized molecules, where one functional group attaches to the surface while the other remains free for further modification, allow for the rational design of multilayer chemisorbed thin films. In this study, substituted styrenes acted as a model system for SAM formation through an alkene moiety. Substituents ranging from activating to strongly deactivating for aromatic reactions were used to probe the effect of the electronic properties of functionalizing molecules on the rate of SAM formation. Substituted styrene SAMs were formed on hydrogen-terminated p-type Si(100) and n-type Si(111) via sonochemical functionalization. Monolayers were characterized via ellipsometry, IR spectroscopy, contact angle goniometry, and X-ray photoelectron spectroscopy (XPS). Initial rates of reaction for molecules that selectively attached through the alkene were further studied. A linear relationship was observed between the initial rates of surface functionalization and the substituent electron donating/withdrawing ability for the substituted styrenes, as described by their respective Hammett constants. This study provides precedent for applying well quantified homogeneous chemical reaction relationships to reactions at the solid-liquid interface.

The rapid formation of functional monolayers on silicon under mild conditions

Rapid grafting of aromatic-conjugated acetylenes on non-oxidized Si(100) electrodes and the importance of the interplay between the solvent's dielectric constant and the adsorbate's electron-scavenging ability.

Wet chemical functionalization of III-V semiconductor surfaces: alkylation of gallium arsenide and gallium nitride by a Grignard reaction sequence

Crystalline gallium arsenide (GaAs) (111)A and gallium nitride (GaN) (0001) surfaces have been functionalized with alkyl groups via a sequential wet chemical chlorine activation, Grignard reaction process. For GaAs(111)A, etching in HCl in diethyl ether effected both oxide removal and surface-bound Cl. X-ray photoelectron (XP) spectra demonstrated selective surface chlorination after exposure to 2 M HCl in diethyl ether for freshly etched GaAs(111)A but not GaAs(111)B surfaces. GaN(0001) surfaces exposed to PCl(5) in chlorobenzene showed reproducible XP spectroscopic evidence for Cl-termination. The Cl-activated GaAs(111)A and GaN(0001) surfaces were both reactive toward alkyl Grignard reagents, with pronounced decreases in detectable Cl signal as measured by XP spectroscopy. Sessile contact angle measurements between water and GaAs(111)A interfaces after various levels of treatment showed that GaAs(111)A surfaces became significantly more hydrophobic following reaction with C(n)H(2n-1)MgCl (n = 1, 2, 4, 8, 14, 18). High-resolution As 3d XP spectra taken at various times during prolonged direct exposure to ambient lab air indicated that the resistance of GaAs(111)A to surface oxidation was greatly enhanced after reaction with Grignard reagents. GaAs(111)A surfaces terminated with C(18)H(37) groups were also used in Schottky heterojunctions with Hg. These heterojunctions exhibited better stability over repeated cycling than heterojunctions based on GaAs(111)A modified with C(18)H(37)S groups. Raman spectra were separately collected that suggested electronic passivation by surficial Ga-C bonds at GaAs(111)A. Specifically, GaAs(111)A surfaces reacted with alkyl Grignard reagents exhibited Raman signatures comparable to those of samples treated with 10% Na(2)S in tert-butanol. For GaN(0001), high-resolution C 1s spectra exhibited the characteristic low binding energy shoulder demonstrative of surface Ga-C bonds following reaction with CH(3)MgCl. In addition, 4-fluorophenyl groups were attached and detected after reaction with C(6)H(4)FMgBr, further confirming the susceptibility of Cl-terminated GaN(0001) to surface alkylation. However, the measured hydrophobicities of alkyl-terminated GaAs(111)A and GaN(0001) were markedly distinct, indicating differences in the resultant surface layers. The results presented here, in conjunction with previous studies on GaP, show that atop Ga atoms at these crystallographically related surfaces can be deliberately functionalized and protected through Ga-C surface bonds that do not involve thiol/sulfide chemistry or gas-phase pretreatments.

Tandem "click" reactions at acetylene-terminated Si(100) monolayers

We demonstrate a simple method for coupling alkynes to alkynes. The method involves tandem azide-alkyne cycloaddition reactions ("click" chemistry) for the immobilization of 1-alkyne species onto an alkyne modified surface in a one-pot procedure. In the case presented, these reactions take place on a nonoxidized Si(100) surface although the approach is general for linking alkynes to alkynes. The applicability of the method in the preparation of electrically well-behaved functionalized surfaces is demonstrated by coupling an alkyne-tagged ferrocene species onto alkyne-terminated Si(100) surfaces. The utility of the approach in biotechnology is shown by constructing a DNA sensing interface by derivatization of the acetylenyl surface with commercially available alkyne-tagged oligonucleotides. Cyclic voltametry, electrochemical impedance spectroscopy, X-ray photoelectron spectroscopy, and X-ray reflectometry are used to characterize the coupling reactions and performance of the final modified surfaces. These data show that this synthetic protocol gives chemically well-defined, electronically well-behaved, and robust (bio)functionalized monolayers on silicon semiconducting surfaces.

Electrochemical and thermal grafting of alkyl grignard reagents onto (100) silicon surfaces

Passivation of (100) silicon surfaces using alkyl Grignard reagents is explored via electrochemical and thermal grafting methods. The electrochemical behavior of silicon in methyl or ethyl Grignard reagents in tetrahydrofuran is investigated using cyclic voltammetry. Surface morphology and chemistry are investigated using atomic force microscopy, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy (XPS). Results show that electrochemical pathways provide an efficient and more uniform passivation method relative to thermal methods, and XPS results demonstrate that electrografted terminations are effective at limiting native oxide formation for more than 55 days in ambient conditions. A two-electron per silicon mechanism is proposed for electrografting a single (1:1) alkyl group per (100) silicon atom. The mechanism includes oxidation of two Grignard species and subsequent hydrogen abstraction and alkylation reaction resulting in a covalent attachment of alkyl groups with silicon.

Vibrational and electronic characterization of ethynyl derivatives grafted onto hydrogenated Si(111) surfaces

Covalent grafting of ethynyl derivatives (-C triple bond C-H, -C triple bond C-CH3, -C triple bond C-aryl) onto H-terminated Si(111) surfaces was performed by a one-step anodic treatment in Grignard electrolytes. The electrochemical grafting of such ethynyl derivatives, which tends to form ultrathin polymeric layers, can be controlled by the current and charge flow passing through the Si electrode. The prepared ultrathin layers cover the Si surface and had a thickness up to 20 nm, as investigated by the scanning electron microscopy (SEM) technique. Exchanging Cl for Br in the ethynyl Grignard reagent leads to very thin layers, even under the same electrochemical conditions. However, for all ethynyl derivatives, high-resolution synchrotron X-ray photoelectron spectroscopy (SXPS) investigations reveal the incorporation of halogen atoms in the organic layers obtained. Moreover, it was observed that the larger the end group of the ethynyl derivative, the thinner the thickness of the ultrathin polymeric layers as measured by both SXPS and SEM techniques after low and high current flow respectively. For the first time, these new types of ultrathin organic layers on Si surfaces were investigated using infrared spectroscopic ellipsometry (IRSE). The different possible reaction pathways are discussed.

Si(111) surface modified with alpha,beta-unsaturated carboxyl groups studied by MIR-FTIR

A Si(111) surface modified with alpha,beta-unsaturated carboxyl groups was fabricated using activated alkynes such as propiolic acid and propiolic acid methyl ester via hydrosilylation reaction. The obtained coverage of carboxyl groups was roughly estimated to be 55-60% in both cases from the Si-2p and C-1s X-ray photoelectron specroscopy (XPS) peak intensities. The detailed surface structures were investigated by multiple internal reflection Fourier transform infrared (MIR-FTIR) measurement. It was revealed that this reaction was promoted by visible light irradiation at room temperature. The Si surface modified with functional groups prepared under such a moderate condition is adaptable to functional devices which are easily damaged under UV irradiation or high temperature conditions.

Chemical and Electrical Passivation of Silicon (111) Surfaces through Functionalization with Sterically Hindered Alkyl Groups

Crystalline Si(111) surfaces have been alkylated in a two-step chlorination/alkylation process using sterically bulky alkyl groups such as (CH3)2CH- (iso-propyl), (CH3)3C- (tert-butyl), and C6H5- (phenyl) moieties. X-ray photoelectron spectroscopic (XPS) data in the C 1s region of such surfaces exhibited a low energy emission at 283.9 binding eV, consistent with carbon bonded to Si. The C 1s XPS data indicated that the alkyls were present at lower coverages than methyl groups on CH(3)-terminated Si(111) surfaces. Despite the lower alkyl group coverage, no Cl was detected after alkylation. Functionalization with the bulky alkyl groups effectively inhibited the oxidation of Si(111) surfaces in air and produced low (<100 cm s(-1)) surface recombination velocities. Transmission infrared spectroscopy indicated that the surfaces were partially H-terminated after the functionalization reaction. Application of a reducing potential, -2.5 V vs Ag+/Ag, to Cl-terminated Si(111) electrodes in tetrahydrofuran resulted in the complete elimination of Cl, as measured by XPS. The data are consistent with a mechanism in which the reaction of alkyl Grignard reagents with the Cl-terminated Si(111) surfaces involves electron transfer from the Grignard reagent to the Si, loss of chloride to solution, and subsequent reaction between the resultant silicon radical and alkyl radical to form a silicon-carbon bond. Sites sterically hindered by neighboring alkyl groups abstract a H atom to produce Si-H bonds on the surface.

Adsorption of Unsaturated Hydrocarbon Moieties on H:Si(111) by Grignard Reaction

Grafting of unsaturated hydrocarbon moieties (-CH(2)-CH=CH(2), -CH=CH(2), -CH(2)-CH=CH-CH(3), and -CCH) by a C-Si covalent bond was attempted by the Grignard reaction on hydrogen-terminated Si(111) in tetrahydrofuran solutions. The product adsorbates were monitored by vibrational methods of high-resolution electron energy loss spectroscopy and multiple internal infrared reflection absorption spectroscopy, as well as Auger electron spectroscopy. The temperature and the period of reaction were adjusted so as to preserve the unsaturated carbon-carbon bonds. The -CH(2)-CH=CH(2) group was introduced by a mild reaction condition, with the reservation of the C=C double bond confirmed. The unsaturated bonds in -CH(2)-CH=CH-CH(3) and -CCH were also reserved. Only in the case of -CH=CH(2) was the reservation of the C=C double bond not realized. Unsaturated hydrocarbon moieties are applicable for further organic modification to introduce functional groups, and are prospective materials in nanofabrication and biological application on silicon wafer surfaces.

Reaction of Porous Silicon with Both End-Functionalized Organic Compounds Bearing α-Bromo and ω-Carboxy Groups for Immobilization of Biomolecules

Both end-functionalized (alpha-bromo and omega-carboxy) compounds were first tested for the radical reaction on the silicon-hydride (Si-H) terminated porous silicon (PSi) with/without the presence of diacyl peroxide initiator under microwave irradiation. Then the carboxylic acid monolayers (CAMs) assembled on PSi through the robust Si-C bonds were converted to amino-reactive linker, N-hydroxysuccinimide (NHS)-ester, terminated monolayers. And finally two proteins of bovine serum albumin (BSA) and lysozyme (Lys) were immobilized through amide bonds. The optimum PSi membrane for protein immobilization without collapse, with parameters of porous radii 4-10 nm and depth 0.2-4.6 mum, was prepared from the (100)-oriented p-type silicon wafer. The chemically converted surface products were monitored with Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FESEM).