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Gerwig M, Böhme U, Friebel M. Challenges in the Synthesis and Processing of Hydrosilanes as Precursors for Silicon Deposition. Chemistry 2024:e202400013. [PMID: 38757614 DOI: 10.1002/chem.202400013] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/03/2024] [Indexed: 05/18/2024]
Abstract
Liquid hydrosilanes are required for the production of silicon films. The silicon layers can be processed for electronic devices like transistors or thin-film solar cells. Hydrosilanes are highly reactive and pyrophoric. Therefore, the synthesis of these compounds is challenging and dangerous. The available synthesis methods for hydrosilanes are reviewed and compared. Hydrosilanes are highly attractive compounds, which can be processed as liquids with printing technology to amorphous silicon films on nearly any solid substrate. The silicon layers can be processed for electronic devices like transistors or thin-film solar cells. The endothermic character of hydrosilanes with their positive enthalpies of formation results in favorable properties for processing. The larger the molecules, the lower their decomposition temperature and the higher their photoactivity. Cyclic hydrosilanes such as cyclopentasilane and cyclohexasilane can be easily deposited. The branched neopentasilane is more difficult to deposit but yields better-quality films after processing. The key challenge is the complex synthesis of the precursors and the hydrosilanes. The available preparative methods are presented in this review and their advantages and disadvantages are evaluated. The following synthesis methods are presented and discussed in this article: Wurtz coupling and other reductive coupling processes, dehydrogenative coupling of silanes, plasma synthesis of chlorinated polysilanes, amine- or chloride-induced disproportionations, and transformation of monosilane to higher silanes. Plasma synthesis is already carried out today as a continuous industrial process. The most effective synthesis methods in the laboratory are currently amine- and chloride-induced disproportionations. There is a great need to further optimize the syntheses of hydrosilanes and to develop new simple synthesis variants.
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Affiliation(s)
- Maik Gerwig
- Institut für Anorganische Chemie, TU Bergakademie Freiberg, Leipziger Str. 29, 09599, Freiberg, Germany
| | - Uwe Böhme
- Institut für Anorganische Chemie, TU Bergakademie Freiberg, Leipziger Str. 29, 09599, Freiberg, Germany
| | - Mike Friebel
- Institut für Anorganische Chemie, TU Bergakademie Freiberg, Leipziger Str. 29, 09599, Freiberg, Germany
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Ali MA, Tchalala MR. Chemical Synthesis of Silicon Nanosheets from layered calcium disilicide. ACTA ACUST UNITED AC 2014. [DOI: 10.1088/1742-6596/491/1/012009] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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Molnar W, Lugstein A, Pongratz P, Seyring M, Rettenmayr M, Borschel C, Ronning C, Auner N, Bauch C, Bertagnolli E. A general approach toward shape-controlled synthesis of silicon nanowires. NANO LETTERS 2013; 13:21-25. [PMID: 23214964 DOI: 10.1021/nl303152b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Controlling the morphology, electronic properties, and growth direction of nanowires (NWs) is an important aspect regarding their integration into devices on technologically relevant scales. Using the vapor-solid-solid (VSS) approach, with Ni as a catalyst and octachlorotrisilane (Si(3)Cl(8), OCTS) as a precursor, we achieved epitaxial growth of rectangular-shaped Si-NWs, which may have important implications for electronic mobility and light scattering in NW devices. The process parameters were adjusted to form cubic α-NiSi(2) particles which further act as the shaping element leading to prismatic Si-NWs. Along with the uncommon shape, also different crystallographic growth directions, namely, [100] and [110], were observed on the very same sample. The growth orientations were determined by analysis of the NWs' azimuths on the Si (111) substrates as well as by detailed transmission electron microscopy (TEM) and selected area electron diffraction (SAED) investigations.
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Affiliation(s)
- W Molnar
- Institute of Solid State Electronics, TU-Wien, Floragasse 7, A-1040 Vienna, Austria
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Molnar W, Lugstein A, Wojcik T, Pongratz P, Auner N, Bauch C, Bertagnolli E. Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2012; 3:564-569. [PMID: 23019552 PMCID: PMC3458602 DOI: 10.3762/bjnano.3.65] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/30/2012] [Accepted: 05/11/2012] [Indexed: 06/01/2023]
Abstract
Perchlorinated polysilanes were synthesized by polymerization of tetrachlorosilane under cold plasma conditions with hydrogen as a reducing agent. Subsequent selective cleavage of the resulting polymer yielded oligochlorosilanes Si(n)Cl(2) (n) (+2) (n = 2, 3) from which the octachlorotrisilane (n = 3, Cl(8)Si(3), OCTS) was used as a novel precursor for the synthesis of single-crystalline Si nanowires (NW) by the well-established vapor-liquid-solid (VLS) mechanism. By adding doping agents, specifically BBr(3) and PCl(3), we achieved highly p- and n-type doped Si-NWs by means of atmospheric-pressure chemical vapor deposition (APCVD). These as grown NWs were investigated by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM), as well as electrical measurements of the NWs integrated in four-terminal and back-gated MOSFET modules. The intrinsic NWs appeared to be highly crystalline, with a preferred growth direction of [111] and a specific resistivity of ρ = 6 kΩ·cm. The doped NWs appeared to be [112] oriented with a specific resistivity of ρ = 198 mΩ·cm for p-type Si-NWs and ρ = 2.7 mΩ·cm for n-doped Si-NWs, revealing excellent dopant activation.
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Affiliation(s)
- Wolfgang Molnar
- Institute of Solid State Electronics, TU-Wien, Floragasse 7, A-1040 Vienna, Austria
| | - Alois Lugstein
- Institute of Solid State Electronics, TU-Wien, Floragasse 7, A-1040 Vienna, Austria
| | - Tomasz Wojcik
- Institute of Solid State Physics, TU-Wien, Wiedner Hauptstrasse 8/052, A-1040 Vienna, Austria
| | - Peter Pongratz
- Institute of Solid State Physics, TU-Wien, Wiedner Hauptstrasse 8/052, A-1040 Vienna, Austria
| | - Norbert Auner
- Spawnt Research GmbH, Entwicklungszentrum Wolfen, Kunstseidenstrasse 6, D-06766 Bitterfeld-Wolfen
- Johann Wolfgang von Goethe-University, Max-von-Laue-Strasse 7, D-60438 Frankfurt am Main, Germany
| | - Christian Bauch
- Spawnt Research GmbH, Entwicklungszentrum Wolfen, Kunstseidenstrasse 6, D-06766 Bitterfeld-Wolfen
- Johann Wolfgang von Goethe-University, Max-von-Laue-Strasse 7, D-60438 Frankfurt am Main, Germany
| | - Emmerich Bertagnolli
- Institute of Solid State Electronics, TU-Wien, Floragasse 7, A-1040 Vienna, Austria
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Kämpken B, Wulf V, Auner N, Winhold M, Huth M, Rhinow D, Terfort A. Directed deposition of silicon nanowires using neopentasilane as precursor and gold as catalyst. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2012; 3:535-45. [PMID: 23019549 PMCID: PMC3458599 DOI: 10.3762/bjnano.3.62] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2012] [Accepted: 07/11/2012] [Indexed: 05/12/2023]
Abstract
In this work the applicability of neopentasilane (Si(SiH(3))(4)) as a precursor for the formation of silicon nanowires by using gold nanoparticles as a catalyst has been explored. The growth proceeds via the formation of liquid gold/silicon alloy droplets, which excrete the silicon nanowires upon continued decomposition of the precursor. This mechanism determines the diameter of the Si nanowires. Different sources for the gold nanoparticles have been tested: the spontaneous dewetting of gold films, thermally annealed gold films, deposition of preformed gold nanoparticles, and the use of "liquid bright gold", a material historically used for the gilding of porcelain and glass. The latter does not only form gold nanoparticles when deposited as a thin film and thermally annealed, but can also be patterned by using UV irradiation, providing access to laterally structured layers of silicon nanowires.
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Affiliation(s)
- Britta Kämpken
- Institute of Inorganic Chemistry, University of Frankfurt, Max-von-Laue-Straße 7, 60438 Frankfurt am Main, Germany
| | - Verena Wulf
- Institute of Inorganic Chemistry, University of Frankfurt, Max-von-Laue-Straße 7, 60438 Frankfurt am Main, Germany
| | - Norbert Auner
- Institute of Inorganic Chemistry, University of Frankfurt, Max-von-Laue-Straße 7, 60438 Frankfurt am Main, Germany
| | - Marcel Winhold
- Institute of Physics, University of Frankfurt, Max-von-Laue-Straße 1, 60438 Frankfurt am Main, Germany
| | - Michael Huth
- Institute of Physics, University of Frankfurt, Max-von-Laue-Straße 1, 60438 Frankfurt am Main, Germany
| | - Daniel Rhinow
- Department of Structural Biology, Max Planck Institute of Biophysics, Max-von-Laue-Straße 3, 60438 Frankfurt am Main, Germany
| | - Andreas Terfort
- Institute of Inorganic Chemistry, University of Frankfurt, Max-von-Laue-Straße 7, 60438 Frankfurt am Main, Germany
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Okamoto H, Sugiyama Y, Nakano H. Synthesis and Modification of Silicon Nanosheets and Other Silicon Nanomaterials. Chemistry 2011; 17:9864-87. [DOI: 10.1002/chem.201100641] [Citation(s) in RCA: 138] [Impact Index Per Article: 10.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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