Organic Zener diodes: tunneling across the gap in organic semiconductor materials

Highly Ordered Small Molecule Organic Semiconductor Thin-Films Enabling Complex, High-Performance Multi-Junction Devices

Organic semiconductors have opened up many new electronic applications, enabled by properties like flexibility, low-cost manufacturing, and biocompatibility, as well as improved ecological sustainability due to low energy use during manufacturing. Most current devices are made of highly disordered thin-films, leading to poor transport properties and, ultimately, reduced device performance as well. Here, we discuss techniques to prepare highly ordered thin-films of organic semiconductors to realize fast and highly efficient devices as well as novel device types. We discuss the various methods that can be implemented to achieve such highly ordered layers compatible with standard semiconductor manufacturing processes and suitable for complex devices. A special focus is put on approaches utilizing thermal treatment of amorphous layers of small molecules to create crystalline thin-films. This technique has first been demonstrated for rubrene─an organic semiconductor with excellent transport properties─and extended to some other molecular structures. We discuss recent experiments that show that these highly ordered layers show excellent lateral and vertical mobilities and can be electrically doped to achieve high n- and p-type conductivities. With these achievements, it is possible to integrate these highly ordered layers into specialized devices, such as high-frequency diodes or completely new device principles for organics, e.g., bipolar transistors.

Fibriform Organic Electrochemical Diodes with Rectifying, Complementary Logic and Transient Voltage Suppression Functions for Wearable E-Textile Embedded Circuits

In this study, a fibriform electrochemical diode capable of performing rectifying, complementary logic and device protection functions for future e-textile circuit systems is fabricated. The diode was fabricated using a simple twisted assembly of metal/polymer semiconductor/ion gel coaxial microfibers and conducting microfiber electrodes. The fibriform diode exhibited a prominent asymmetrical current flow with a rectification ratio of over 10², and its performance was retained after repeated bending deformations and washings. Fundamental studies on the electrochemical interactions of polymer semiconductors with ions reveal that the Faradaic current generated in polymer semiconductors by electrochemical reactions results in an abrupt current increase under a forward bias, in which the threshold voltages of the device are determined by the oxidation or reduction potential of the polymer semiconductor. Textile-embedded full-wave rectifiers and logic gate circuits were implemented by simply integrating the fibriform diodes, exhibiting AC-to-DC signal conversion and logic operation functions, respectively. It was also confirmed that the proposed fibriform diode can suppress transient voltages and thus protect a low-voltage operational wearable e-textile circuit.

Study of electric conduction mechanisms in bismuth silicate nanofibers

This work represents the nature of conduction mechanism in bismuth silicate (BiSiO) nanofibers as a function of temperature and frequency. Scanning electron micrographs and X-rays diffraction patterns exhibited the formation of cubic phases of Bi₄(SiO₄)₃ and Bi₁₂SiO₂₀ nanofibers respectively with an average diameter of ~200 nm. Temperature dependent (300 K–400 K) electrical characterization of fibers was carried out in frequency range of ~20 Hz–2 MHz. The complex impedance analysis showed contribution from bulk and intergranular parts of nanofibers in conduction. Moreover, analysis of the Cole-Cole plot confirmed the space charge dependent behavior of BiSiO nanofibers. Two types of relaxation phenomena were observed through Modulus analysis. In ac conductivity curve, step like feature of plateau and dispersive regions were described by Maxwell-Wagner effect while the dc part obeyed the Arrhenius law. However, frequency dependent ac conductivity revealed the presence of conduction mechanism in diverse regions that was ascribed to large polaron tunneling model. Detailed analysis of complex Impedance and ac conductivity measurement showed negative temperature coefficient of resistance for the BiSiO nanofibers. Current-voltage (IV) characteristics represented ohmic conduction; followed by space charge limited current conduction at intermediate voltages. Results from both ac and dc measurements were in good agreement with each other.

Minority Currents in n-Doped Organic Transistors

Doping allows us to control the majority and minority charge carrier concentration in organic field-effect transistors. However, the precise mechanism of minority charge carrier generation and transport in organic semiconductors is largely unknown. Here, the injection of minority charge carriers into n-doped organic field-effect transistors is studied. It is shown that holes can be efficiently injected into the transistor channel via Zener tunneling inside the intrinsic pentacene layer underneath the drain electrode. Moreover, it is shown that the onset of minority (hole) conduction is shifted by lightly n-doping the channel region of the transistor. This behavior can be explained by a large voltage that has to be applied to the gate in order to fully deplete the n-doped layer as well as an increase in hole trapping by inactive dopants.

Molecular Electrical Doping of Organic Semiconductors: Fundamental Mechanisms and Emerging Dopant Design Rules

Today's information society depends on our ability to controllably dope inorganic semiconductors, such as silicon, thereby tuning their electrical properties to application-specific demands. For optoelectronic devices, organic semiconductors, that is, conjugated polymers and molecules, have emerged as superior alternative owing to the ease of tuning their optical gap through chemical variability and their potential for low-cost, large-area processing on flexible substrates. There, the potential of molecular electrical doping for improving the performance of, for example, organic light-emitting devices or organic solar cells has only recently been established. The doping efficiency, however, remains conspicuously low, highlighting the fact that the underlying mechanisms of molecular doping in organic semiconductors are only little understood compared with their inorganic counterparts. Here, we review the broad range of phenomena observed upon molecularly doping organic semiconductors and identify two distinctly different scenarios: the pairwise formation of both organic semiconductor and dopant ions on one hand and the emergence of ground state charge transfer complexes between organic semiconductor and dopant through supramolecular hybridization of their respective frontier molecular orbitals on the other hand. Evidence for the occurrence of these two scenarios is subsequently discussed on the basis of the characteristic and strikingly different signatures of the individual species involved in the respective doping processes in a variety of spectroscopic techniques. The critical importance of a statistical view of doping, rather than a bimolecular picture, is then highlighted by employing numerical simulations, which reveal one of the main differences between inorganic and organic semiconductors to be their respective density of electronic states and the doping induced changes thereof. Engineering the density of states of doped organic semiconductors, the Fermi-Dirac occupation of which ultimately determines the doping efficiency, thus emerges as key challenge. As a first step, the formation of charge transfer complexes is identified as being detrimental to the doping efficiency, which suggests sterically shielding the functional core of dopant molecules as an additional design rule to complement the requirement of low ionization energies or high electron affinities in efficient n-type or p-type dopants, respectively. In an extended outlook, we finally argue that, to fully meet this challenge, an improved understanding is required of just how the admixture of dopant molecules to organic semiconductors does affect the density of states: compared with their inorganic counterparts, traps for charge carriers are omnipresent in organic semiconductors due to structural and chemical imperfections, and Coulomb attraction between ionized dopants and free charge carriers is typically stronger in organic semiconductors owing to their lower dielectric constant. Nevertheless, encouraging progress is being made toward developing a unifying picture that captures the entire range of doping induced phenomena, from ion-pair to complex formation, in both conjugated polymers and molecules. Once completed, such a picture will provide viable guidelines for synthetic and supramolecular chemistry that will enable further technological advances in organic and hybrid organic/inorganic devices.

Alternating current driven organic light emitting diodes using lithium fluoride insulating layers

We demonstrate an alternating current (AC)-driven organic light emitting diodes (OLED) with lithium fluoride (LiF) insulating layers fabricated using simple thermal evaporation. Thermal evaporated LiF provides high stability and excellent capacitance for insulating layers in AC devices. The device requires a relatively low turn-on voltage of 7.1 V with maximum luminance of 87 cd/m(2) obtained at 10 kHz and 15 Vrms. Ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy are employed simultaneously to examine the electronic band structure of the materials in AC-driven OLED and to elucidate the operating mechanism, optical properties and electrical characteristics. The time-resolved luminance is also used to verify the device performance when driven by AC voltage.

Dual channel operation upon n-channel percolation in a pentacene-C60 ambipolar organic thin film transistor

Thickness resolved measurements of ambipolar thin-film transistor characteristics track the charging of an organic-organic heterojunction. Combined with structural investigation methods such as AFM and GIXS, this leads to a better understanding of the physics in state of the art devices such as organic solar cells, organic light emitting diodes and light emitting TFTs.

Large-area, flexible imaging arrays constructed by light-charge organic memories

Existing organic imaging circuits, which offer attractive benefits of light weight, low cost and flexibility, are exclusively based on phototransistor or photodiode arrays. One shortcoming of these photo-sensors is that the light signal should keep invariant throughout the whole pixel-addressing and reading process. As a feasible solution, we synthesized a new charge storage molecule and embedded it into a device, which we call light-charge organic memory (LCOM). In LCOM, the functionalities of photo-sensor and non-volatile memory are integrated. Thanks to the deliberate engineering of electronic structure and self-organization process at the interface, 92% of the stored charges, which are linearly controlled by the quantity of light, retain after 20000 s. The stored charges can also be non-destructively read and erased by a simple voltage program. These results pave the way to large-area, flexible imaging circuits and demonstrate a bright future of small molecular materials in non-volatile memory.