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Roschin BS, Argunova TS, Lebedev SP, Asadchikov VE, Lebedev AA, Volkov YO, Nuzhdin AD. Application of Grazing-Incidence X-ray Methods to Study Terrace-Stepped SiC Surface for Graphene Growth. MATERIALS (BASEL, SWITZERLAND) 2022; 15:7669. [PMID: 36363260 PMCID: PMC9654947 DOI: 10.3390/ma15217669] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/23/2022] [Revised: 10/23/2022] [Accepted: 10/28/2022] [Indexed: 06/16/2023]
Abstract
The synthesis of graphene by the graphitization of SiC surface has been driven by a need to develop a way to produce graphene in large quantities. With the increased use of thermal treatments of commercial SiC substrates, a comprehension of the surface restructuring due to the formation of a terrace-stepped nanorelief is becoming a pressing challenge. The aim of this paper is to evaluate the utility of X-ray reflectometry and grazing-incidence off-specular scattering for a non-destructive estimate of depth-graded and lateral inhomogeneities on SiC wafers annealed in a vacuum at a temperature of 1400-1500 °C. It is shown that the grazing-incidence X-ray method is a powerful tool for the assessment of statistical parameters, such as effective roughness height, average terrace period and dispersion. Moreover, these methods are advantageous to local probe techniques because a broad range of spatial frequencies allows for faster inspection of the whole surface area. We have found that power spectral density functions and in-depth density profiles manifest themselves differently between the probing directions along and across a terrace edge. Finally, the X-ray scattering data demonstrate quantitative agreement with the results of atomic force microscopy.
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Affiliation(s)
- Boris S. Roschin
- Federal Research Center “Crystallography and Photonics”, Russian Academy of Sciences, Leninsky ave. 59, 119333 Moscow, Russia
| | - Tatiana S. Argunova
- Ioffe Institute, Russian Academy of Sciences, Polytekhnicheskaya st. 26, 194021 St. Petersburg, Russia
| | - Sergey P. Lebedev
- Ioffe Institute, Russian Academy of Sciences, Polytekhnicheskaya st. 26, 194021 St. Petersburg, Russia
| | - Victor E. Asadchikov
- Federal Research Center “Crystallography and Photonics”, Russian Academy of Sciences, Leninsky ave. 59, 119333 Moscow, Russia
| | - Alexander A. Lebedev
- Ioffe Institute, Russian Academy of Sciences, Polytekhnicheskaya st. 26, 194021 St. Petersburg, Russia
| | - Yuri O. Volkov
- Federal Research Center “Crystallography and Photonics”, Russian Academy of Sciences, Leninsky ave. 59, 119333 Moscow, Russia
| | - Alexander D. Nuzhdin
- Federal Research Center “Crystallography and Photonics”, Russian Academy of Sciences, Leninsky ave. 59, 119333 Moscow, Russia
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Graphene-Coated Iron Nitride Streptavidin Magnetic Beads: Preparation and Application in SARS-CoV-2 Enrichment. MAGNETOCHEMISTRY 2022. [DOI: 10.3390/magnetochemistry8040041] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
In this study, we prepared a streptavidin magnetic bead based on graphene-coated iron nitride magnetic beads (G@FeN-MB) and tried to use it for the enrichment of severe acute respiratory syndrome coronavirus-2 (SARS-CoV-2). The outer shell of our magnetic bead was wrapped with multiple graphene sheets, and there is no report on the application of graphene to the magnetic-bead-coating material. First, the graphene shell of G@FeN-MB was oxidized by a modified Hummer method so as to generate the carboxyl groups required for the coupling of streptavidin (SA) on the surface of the magnetic beads. X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), and transmission electron microscopy (TEM) were used to characterize the oxidized G@FeN-MB (GO@FeN-MB). Streptavidin was then linked to the surface of the GO@FeN-MB by coupling the amino of the streptavidin with the carboxyl on the magnetic beads by carbodiimide method; thus, the streptavidin magnetic beads (SAMBs) were successfully prepared. To prove the practicality of the SAMBs, biotinylated SARS-CoV-2 S1 antibody was linked with it to respectively capture SARS-CoV-2 Spike-protein-coupled polystyrene beads (S-PS) and pseudovirus with S-protein expressed. Microplate reader and fluorescence microscope results show that the SAMBs can effectively enrich viruses. In conclusion, the preparation of SAMBs with G@FeN-MB is feasible and has potential for application in the field of virus enrichment.
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Nguyen VL, Duong DL, Lee SH, Avila J, Han G, Kim YM, Asensio MC, Jeong SY, Lee YH. Layer-controlled single-crystalline graphene film with stacking order via Cu-Si alloy formation. NATURE NANOTECHNOLOGY 2020; 15:861-867. [PMID: 32719494 DOI: 10.1038/s41565-020-0743-0] [Citation(s) in RCA: 33] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/01/2019] [Accepted: 06/24/2020] [Indexed: 06/11/2023]
Abstract
Multilayer graphene and its stacking order provide both fundamentally intriguing properties and technological engineering applications. Several approaches to control the stacking order have been demonstrated, but a method of precisely controlling the number of layers with desired stacking sequences is still lacking. Here, we propose an approach for controlling the layer thickness and crystallographic stacking sequence of multilayer graphene films at the wafer scale via Cu-Si alloy formation using direct chemical vapour deposition. C atoms are introduced by tuning the ultra-low-limit CH4 concentration to form a SiC layer, reaching one to four graphene layers at the wafer scale after Si sublimation. The crystallographic structure of single-crystalline or uniformly oriented bilayer (AB), trilayer (ABA) and tetralayer (ABCA) graphene are determined via nano-angle-resolved photoemission spectroscopy, which agrees with theoretical calculations, Raman spectroscopy and transport measurements. The present study takes a step towards the layer-controlled growth of graphite and other two-dimensional materials.
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Affiliation(s)
- Van Luan Nguyen
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
- Inorganic Materials Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Korea
| | - Dinh Loc Duong
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
- Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, Korea
| | - Sang Hyub Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
- Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, Korea
| | - José Avila
- Synchrotron SOLEIL, Université Paris-Saclay, L'Orme des Merisiers Saint-Aubin, Gif sur Yvette, France
| | - Gyeongtak Han
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
| | - Young-Min Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
- Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, Korea
| | - Maria C Asensio
- Materials Science Institute of Madrid (ICMM), Spanish Scientific Research Council (CSIC), Cantoblanco, Madrid, Spain.
- MATINÉE: CSIC Associated Unit (ICMM-ICMUV Valencia University), Cantoblanco, Madrid, Spain.
| | - Se-Young Jeong
- Department of Cogno-mechatronics Engineering, Department of Optics and Mechatronics Engineering, Pusan National University, Busan, Republic of Korea.
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea.
- Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, Korea.
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Wang L, Wang Q, Huang J, Li WQ, Chen GH, Yang Y. Interface and interaction of graphene layers on SiC(0001[combining macron]) covered with TiC(111) intercalation. Phys Chem Chem Phys 2017; 19:26765-26775. [PMID: 28948251 DOI: 10.1039/c7cp04443g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/02/2023]
Abstract
It is important to understand the interface and interaction between the graphene layer, titanium carbide [TiC(111)] interlayer, and silicon carbide [SiC(0001[combining macron])] substrates in epitaxial growth of graphene on silicon carbide (SiC) substrates. In this study, the fully relaxed interfaces which consist of up to three layers of TiC(111) coatings on the SiC(0001[combining macron]) as well as the graphene layers interactions with these TiC(111)/SiC(0001[combining macron]) were systematically studied using the density functional theory-D2 (DFT-D2) method. The results showed that the two layers of TiC(111) coating with the C/C-terminated interfaces were thermodynamically more favorable than one or three layers of TiC(111) on the SiC(0001[combining macron]). Furthermore, the bonding of the Ti-hollow-site stacked interfaces would be a stronger link than that of the Ti-Fcc-site stacked interfaces. However, the formation of the C/Ti/C and Ti/C interfaces implied that the first upper carbon layer can be formed on TiC(111)/SiC(0001[combining macron]) using the decomposition of the weaker Ti-C and C-Si interfacial bonds. When growing graphene layers on these TiC(111)/SiC(0001[combining macron]) substrates, the results showed that the interaction energy depended not only on the thickness of the TiC(111) interlayer, but also on the number of graphene layers. Bilayer graphene on the two layer thick TiC(111)/SiC(0001[combining macron]) was thermodynamically more favorable than a monolayer or trilayer graphene on these TiC(111)/SiC(0001[combining macron]) substrates. The adsorption energies of the bottom graphene layers with the TiC(111)/SiC(0001[combining macron]) substrates increased with the decrease of the interface vertical distance. The interaction energies between the bottom, second and third layers of graphene on the TiC(111)/SiC(0001[combining macron]) were significantly higher than that of the freestanding graphene layers. All of these findings provided insight into the growth of epitaxial graphene on TiC(111)/SiC(0001[combining macron]) substrates and the design of graphene/TiC/SiC-based electronic devices.
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Affiliation(s)
- Lu Wang
- School of Chemistry and Molecular Engineering, Institute of Advanced Synthesis (IAS), Nanjing Tech University, Nanjing 211816, P. R. China.
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Pasternak I, Dabrowski P, Ciepielewski P, Kolkovsky V, Klusek Z, Baranowski JM, Strupinski W. Large-area high-quality graphene on Ge(001)/Si(001) substrates. NANOSCALE 2016; 8:11241-11247. [PMID: 27189131 DOI: 10.1039/c6nr01329e] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Various experimental data revealing large-area high-quality graphene films grown by the CVD method on Ge(001)/Si(001) substrates are presented. SEM images have shown that the structure of nano-facets is formed on the entire surface of Ge(001), which is covered by a graphene layer over the whole macroscopic sample surface of 1 cm(2). The hill-and-valley structures are positioned 90° to each other and run along the <100> direction. The hill height in relation to the valley measured by STM is about 10 nm. Raman measurements have shown that a uniform graphene monolayer covers the nano-facet structures on the Ge(001) surface. Raman spectroscopy has also proved that the grown graphene monolayer is characterized by small strain variations and minimal charge fluctuations. Atomically resolved STM images on the hills of the nanostructures on the Ge(001) surface have confirmed the presence of a graphene monolayer. In addition, the STS/CITS maps show that high-quality graphene has been obtained on such terraces. The subsequent coalescence of graphene domains has led to a relatively well-oriented large-area layer. This is confirmed by LEED measurements, which have indicated that two orientations are preferable in the grown large-area graphene monolayer. The presence of large-area coverage by graphene has been also confirmed by low temperature Hall measurements of a macroscopic sample, showing an n-type concentration of 9.3 × 10(12) cm(-2) and a mobility of 2500 cm(2) V(-1) s(-1). These important characteristic features of graphene indicate a high homogeneity of the layer grown on the large area Ge(001)/Si(001) substrates.
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Affiliation(s)
- I Pasternak
- Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland.
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Grodecki K, Jozwik I, Baranowski J, Teklinska D, Strupinski W. SEM and Raman analysis of graphene on SiC(0001). Micron 2016; 80:20-3. [DOI: 10.1016/j.micron.2015.05.013] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/25/2015] [Revised: 05/20/2015] [Accepted: 05/20/2015] [Indexed: 11/25/2022]
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Fang W, Hsu AL, Song Y, Kong J. A review of large-area bilayer graphene synthesis by chemical vapor deposition. NANOSCALE 2015; 7:20335-20351. [PMID: 26604157 DOI: 10.1039/c5nr04756k] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Bilayer graphene has attracted considerable attention due to its potential as a tunable band gap in AB-stacked bilayers. Recently, great advancements have been made in the synthesis of chemical-vapor-deposited bilayer graphene. This featured article provides a detailed and up-to-date review of the synthesis of bilayer graphene by chemical vapor deposition (CVD). We will discuss various approaches to synthesize bilayer graphene and the corresponding growth dynamics. Methods for identifying the growth mechanism of bilayer graphene on Cu enclosures are highlighted for a deeper understanding of better control over uniformity and thickness.
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Affiliation(s)
- Wenjing Fang
- Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
| | - Allen L Hsu
- Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA. and Stanford Research Institute International, 333 Ravenswood Avenue, Menlo Park, CA 94025, USA
| | - Yi Song
- Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
| | - Jing Kong
- Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
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Lin CY, Wu JY, Ou YJ, Chiu YH, Lin MF. Magneto-electronic properties of multilayer graphenes. Phys Chem Chem Phys 2015; 17:26008-35. [PMID: 26388455 DOI: 10.1039/c5cp05013h] [Citation(s) in RCA: 32] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/08/2023]
Abstract
This article reviews the rich magneto-electronic properties of multilayer graphene systems. Multilayer graphenes are built from graphene sheets attracting one another by van der Waals forces; the magneto-electronic properties are diversified by the number of layers and the stacking configurations. For an N-layer system, Landau levels are divided into N groups, with each identified by a dominant sublattice associated with the stacking configuration. We focus on the main characteristics of Landau levels, including the degeneracy, wave functions, quantum numbers, onset energies, field-dependent energy spectra, semiconductor-metal transitions, and crossing patterns, which are reflected in the magneto-optical spectroscopy, scanning tunneling spectroscopy, and quantum transport experiments. The Landau levels in AA-stacked graphene are responsible for multiple Dirac cones, while in AB-stacked graphene the Dirac properties depend on the number of graphene layers, and in ABC-stacked graphene the low-lying levels are related to surface states. The Landau-level mixing leads to anticrossings patterns in energy spectra, which are seen for intergroup Landau levels in AB-stacked graphene, while in particular, a formation of both intergroup and intragroup anticrossings is observed in ABC-stacked graphene. The aforementioned magneto-electronic properties lead to diverse optical spectra, plasma spectra, and transport properties when the stacking order and the number of layers are varied. The calculations are in agreement with optical and transport experiments, and novel features that have not yet been verified experimentally are presented.
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Affiliation(s)
- Chiun-Yan Lin
- Department of Physics, National Cheng Kung University, Taiwan.
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Yang Y, Huang LI, Fukuyama Y, Liu FH, Real MA, Barbara P, Liang CT, Newell DB, Elmquist RE. Low carrier density epitaxial graphene devices on SiC. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2015; 11:90-95. [PMID: 25136792 DOI: 10.1002/smll.201400989] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2014] [Revised: 06/16/2014] [Indexed: 06/03/2023]
Abstract
The transport characteristics of graphene devices with low n- or p-type carrier density (∼10(10) -10(11) cm(-2) ), fabricated using a new process that results in minimal organic surface residues, are reported. The p-type molecular doping responsible for the low carrier densities is initiated by aqua regia. The resulting devices exhibit highly developed ν = 2 quantized Hall resistance plateaus at magnetic field strengths of less than 4 T.
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Affiliation(s)
- Yanfei Yang
- National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899-8171; Department of Physics, Georgetown University, Washington, DC, 20057-1228
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Shan X, Wang Q, Bian X, Li WQ, Chen GH, Zhu H. Graphene layers on Si-face and C-face surfaces and interaction with Si and C atoms in layer controlled graphene growth on SiC substrates. RSC Adv 2015. [DOI: 10.1039/c5ra12596k] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022] Open
Abstract
It is important to understand the interface and interaction between graphene layers and SiC surfaces as well as the interaction of key intermediate Si and C atoms with these surfaces and interfaces in epitaxial graphene growth on SiC substrates.
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Affiliation(s)
- Xiaoye Shan
- Department of Applied Chemistry
- College of Chemistry and Molecular Engineering
- Nanjing Tech University
- Nanjing 211816
- P. R. China
| | - Qiang Wang
- Department of Applied Chemistry
- College of Chemistry and Molecular Engineering
- Nanjing Tech University
- Nanjing 211816
- P. R. China
| | - Xin Bian
- Department of Applied Chemistry
- College of Chemistry and Molecular Engineering
- Nanjing Tech University
- Nanjing 211816
- P. R. China
| | - Wei-qi Li
- Department of Physics
- Harbin Institute of Technology
- Harbin 150001
- P. R. China
| | - Guang-hui Chen
- Department of Chemistry
- Shantou University
- Shantou 515063
- P. R. China
| | - Hongjun Zhu
- Department of Applied Chemistry
- College of Chemistry and Molecular Engineering
- Nanjing Tech University
- Nanjing 211816
- P. R. China
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Norimatsu W, Kusunoki M. Epitaxial graphene on SiC{0001}: advances and perspectives. Phys Chem Chem Phys 2014; 16:3501-11. [PMID: 24434866 DOI: 10.1039/c3cp54523g] [Citation(s) in RCA: 125] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Abstract
We review here recent progress on epitaxial graphene grown on a SiC substrate. Epitaxial graphene can be easily grown by heating the SiC single crystal in a high vacuum or in an inert gas atmosphere. The SiC surfaces used for graphene growth contain Si- and C-terminated faces. On the Si-face, homogeneous and clean graphene can be grown with a controlled number of layers, and the carrier mobility reaches as high as several m(2) V s(-1), although this is reduced by the presence of the substrate steps. On the C-face, although the number of layers is not homogeneous, twisted bilayer graphene can be grown, which is expected to be the technique of choice to modify the electronic structure of graphene. From the application point of view, graphene on SiC will be the platform used to fabricate high-speed electronic devices and dense graphene nanoribbon arrays, which will be used to introduce a bandgap.
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Affiliation(s)
- Wataru Norimatsu
- Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya-shi, Aichi-ken 464-8603, Japan.
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Wang Q, Zhang W, Wang L, He K, Ma X, Xue Q. Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2013; 25:095002. [PMID: 23306457 DOI: 10.1088/0953-8984/25/9/095002] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
We report on the preparation of large-scale uniform bilayer graphenes on nominally flat Si-polar 6H-SiC(0001) substrates by flash annealing in ultrahigh vacuum. The resulting graphenes have a single thickness of one bilayer and consist of regular terraces separated by the triple SiC bilayer steps on the 6H-SiC(0001) substrates. In situ scanning tunneling microscopy reveals that suppression of pit formation on terraces and uniformity of SiC decomposition at step edges are the key factors to the uniform thickness. By studying the surface morphologies prepared under different annealing rates, it is found that the annealing rate is directly related to SiC decomposition, diffusion of the released Si/C atoms and strain relaxation, which together determine the final step structure and density of defects.
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Affiliation(s)
- Qingyan Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
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