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Asgari M, Viti L, Zannier V, Sorba L, Vitiello MS. Semiconductor Nanowire Field-Effect Transistors as Sensitive Detectors in the Far-Infrared. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:3378. [PMID: 34947727 PMCID: PMC8705442 DOI: 10.3390/nano11123378] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/12/2021] [Revised: 12/09/2021] [Accepted: 12/09/2021] [Indexed: 11/17/2022]
Abstract
Engineering detection dynamics in nanoscale receivers that operate in the far infrared (frequencies in the range 0.1-10 THz) is a challenging task that, however, can open intriguing perspectives for targeted applications in quantum science, biomedicine, space science, tomography, security, process and quality control. Here, we exploited InAs nanowires (NWs) to engineer antenna-coupled THz photodetectors that operated as efficient bolometers or photo thermoelectric receivers at room temperature. We controlled the core detection mechanism by design, through the different architectures of an on-chip resonant antenna, or dynamically, by varying the NW carrier density through electrostatic gating. Noise equivalent powers as low as 670 pWHz-1/2 with 1 µs response time at 2.8 THz were reached.
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Affiliation(s)
| | | | | | | | - Miriam Serena Vitiello
- NEST, CNR-Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy; (M.A.); (L.V.); (V.Z.); (L.S.)
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2
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Asgari M, Coquillat D, Menichetti G, Zannier V, Diakonova N, Knap W, Sorba L, Viti L, Vitiello MS. Quantum-Dot Single-Electron Transistors as Thermoelectric Quantum Detectors at Terahertz Frequencies. NANO LETTERS 2021; 21:8587-8594. [PMID: 34618458 DOI: 10.1021/acs.nanolett.1c02022] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Low-dimensional nanosystems are promising candidates for manipulating, controlling, and capturing photons with large sensitivities and low noise. If quantum engineered to tailor the energy of the localized electrons across the desired frequency range, they can allow devising of efficient quantum sensors across any frequency domain. Here, we exploit the rich few-electron physics to develop millimeter-wave nanodetectors employing as a sensing element an InAs/InAs0.3P0.7 quantum-dot nanowire, embedded in a single-electron transistor. Once irradiated with light, the deeply localized quantum element exhibits an extra electromotive force driven by the photothermoelectric effect, which is exploited to efficiently sense radiation at 0.6 THz with a noise equivalent power <8 pWHz-1/2 and almost zero dark current. The achieved results open intriguing perspectives for quantum key distributions, quantum communications, and quantum cryptography at terahertz frequencies.
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Affiliation(s)
- Mahdi Asgari
- National Enterprise for Nanoscience and Nanotechnology (NEST), Consiglio Nazionale delle Ricerche (CNR)-Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Dominique Coquillat
- Laboratoire Charles Coulomb UMR 5221, Centre National de la Recherche Scientifique (CNRS)-Université Montpellier, Place Eugène Bataillon CC074, F-34095 Montpellier, France
| | - Guido Menichetti
- Graphene Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova, Italy
- Dipartimento di Fisica dell'Universit di Pisa, Largo Bruno Pontecorvo 3, I-56127 Pisa, Italy
| | - Valentina Zannier
- National Enterprise for Nanoscience and Nanotechnology (NEST), Consiglio Nazionale delle Ricerche (CNR)-Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Nina Diakonova
- Laboratoire Charles Coulomb UMR 5221, Centre National de la Recherche Scientifique (CNRS)-Université Montpellier, Place Eugène Bataillon CC074, F-34095 Montpellier, France
| | - Wojciech Knap
- Laboratoire Charles Coulomb UMR 5221, Centre National de la Recherche Scientifique (CNRS)-Université Montpellier, Place Eugène Bataillon CC074, F-34095 Montpellier, France
- CENTERA Laboratories, Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland
| | - Lucia Sorba
- National Enterprise for Nanoscience and Nanotechnology (NEST), Consiglio Nazionale delle Ricerche (CNR)-Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Leonardo Viti
- National Enterprise for Nanoscience and Nanotechnology (NEST), Consiglio Nazionale delle Ricerche (CNR)-Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Miriam Serena Vitiello
- National Enterprise for Nanoscience and Nanotechnology (NEST), Consiglio Nazionale delle Ricerche (CNR)-Istituto Nanoscienze and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
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Gayduchenko I, Xu SG, Alymov G, Moskotin M, Tretyakov I, Taniguchi T, Watanabe K, Goltsman G, Geim AK, Fedorov G, Svintsov D, Bandurin DA. Tunnel field-effect transistors for sensitive terahertz detection. Nat Commun 2021; 12:543. [PMID: 33483488 PMCID: PMC7822863 DOI: 10.1038/s41467-020-20721-z] [Citation(s) in RCA: 33] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/14/2020] [Accepted: 12/16/2020] [Indexed: 11/09/2022] Open
Abstract
The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.
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Affiliation(s)
- I Gayduchenko
- Physics Department, Moscow Pedagogical State University, Moscow, 119435, Russia.,Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, 141700, Russia
| | - S G Xu
- School of Physics, University of Manchester, Oxford Road, Manchester, M13 9PL, UK.,National Graphene Institute, University of Manchester, Manchester, M13 9PL, UK
| | - G Alymov
- Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, 141700, Russia
| | - M Moskotin
- Physics Department, Moscow Pedagogical State University, Moscow, 119435, Russia.,Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, 141700, Russia
| | - I Tretyakov
- Astro Space Center, Lebedev Physical Institute of the Russian Academy of Sciences, Moscow, 117997, Russia
| | - T Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, 305-0044, Japan
| | - K Watanabe
- Research Center for Functional Materials, National Institute of Material Science, Tsukuba, 305-0044, Japan
| | - G Goltsman
- Physics Department, Moscow Pedagogical State University, Moscow, 119435, Russia.,National Research University Higher School of Economics, Moscow, 101000, Russia
| | - A K Geim
- School of Physics, University of Manchester, Oxford Road, Manchester, M13 9PL, UK.,National Graphene Institute, University of Manchester, Manchester, M13 9PL, UK
| | - G Fedorov
- Physics Department, Moscow Pedagogical State University, Moscow, 119435, Russia. .,Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, 141700, Russia.
| | - D Svintsov
- Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, 141700, Russia.
| | - D A Bandurin
- Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, 141700, Russia. .,School of Physics, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. .,Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
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4
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Terahertz detection with an antenna-coupled highly-doped silicon quantum dot. Sci Rep 2019; 9:18574. [PMID: 31819074 PMCID: PMC6901460 DOI: 10.1038/s41598-019-54130-0] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2019] [Accepted: 11/04/2019] [Indexed: 11/29/2022] Open
Abstract
Nanostructured dopant-based silicon (Si) transistors are promising candidates for high-performance photodetectors and quantum information devices. For highly doped Si with donor bands, the energy depth of donor levels and the energy required for tunneling processes between donor levels are typically on the order of millielectron volts, corresponding to terahertz (THz) photon energy. Owing to these properties, highly doped Si quantum dots (QDs) are highly attractive as THz photoconductive detectors. Here, we demonstrate THz detection with a lithographically defined and highly phosphorus-doped Si QD. We integrate a 40 nm-diameter QD with a micrometer-scale broadband logarithmic spiral antenna for the detection of THz photocurrent in a wide frequency range from 0.58 to 3.11 THz. Furthermore, we confirm that the detection sensitivity is enhanced by a factor of ~880 compared to a QD detector without an antenna. These results demonstrate the ability of a highly doped-Si QD coupled with an antenna to detect broadband THz waves. By optimizing the dopant distribution and levels, further performance improvements are feasible.
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5
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Tsurugaya T, Yoshida K, Yajima F, Shimizu M, Homma Y, Hirakawa K. Terahertz Spectroscopy of Individual Carbon Nanotube Quantum Dots. NANO LETTERS 2019; 19:242-246. [PMID: 30537841 DOI: 10.1021/acs.nanolett.8b03801] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We have investigated the electronic structures of metallic carbon nanotube quantum dots (CNT QDs) by terahertz-induced photocurrent spectroscopy. Sharp peaks due to intersublevel transitions in the CNT QDs are observed at the sublevel energy spacings expected from the linear band dispersion. The line width of the photocurrent peak is as narrow as 0.3 meV and is governed by the tunnel coupling with the electrodes, indicating that the scattering time of electrons in the present CNTs is comparable to or longer than 10 ps. The observation of a sharp absorption peak at the bare quantization energy was not consistent with the Tomonaga-Luttinger liquid theory.
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Affiliation(s)
- Takuma Tsurugaya
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro-ku, Tokyo 153-8505 , Japan
| | - Kenji Yoshida
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro-ku, Tokyo 153-8505 , Japan
| | - Fumiaki Yajima
- Department of Physics and Research Institute for Science & Technology , Tokyo University of Science , 1-3 Kagurazaka , Shinjuku, Tokyo 162-8601 , Japan
| | - Maki Shimizu
- Department of Physics and Research Institute for Science & Technology , Tokyo University of Science , 1-3 Kagurazaka , Shinjuku, Tokyo 162-8601 , Japan
| | - Yoshikazu Homma
- Department of Physics and Research Institute for Science & Technology , Tokyo University of Science , 1-3 Kagurazaka , Shinjuku, Tokyo 162-8601 , Japan
| | - Kazuhiko Hirakawa
- Institute of Industrial Science , University of Tokyo , 4-6-1 Komaba , Meguro-ku, Tokyo 153-8505 , Japan
- Institute for Nano Quantum Information Electronics , University of Tokyo , 4-6-1 Komaba , Meguro-ku, Tokyo 153-8505 , Japan
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6
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McRae AC, Tayari V, Porter JM, Champagne AR. Giant electron-hole transport asymmetry in ultra-short quantum transistors. Nat Commun 2017; 8:15491. [PMID: 28561024 PMCID: PMC5460015 DOI: 10.1038/ncomms15491] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/15/2016] [Accepted: 04/04/2017] [Indexed: 11/15/2022] Open
Abstract
Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e−h charging energy asymmetry). We parameterize the e−h transport asymmetry by the ratio of the hole and electron charging energies ηe−h. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, ηe−h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV. By utilizing electron-hole asymmetry in ultra-short single-walled carbon nanotube (SWCNT) transistors, McRae et al., develop ‘two-in-one' SWCNT quantum devices that can switch from behaving as quantum-dot transistors for holes to quantum buses for electrons by changing the transistor's gate voltage
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Affiliation(s)
- A C McRae
- Department of Physics, Concordia University, 7141 Sherbrooke Street West, Montréal, Québec, Canada H4B 1R6
| | - V Tayari
- Department of Physics, Concordia University, 7141 Sherbrooke Street West, Montréal, Québec, Canada H4B 1R6
| | - J M Porter
- Department of Physics, Concordia University, 7141 Sherbrooke Street West, Montréal, Québec, Canada H4B 1R6
| | - A R Champagne
- Department of Physics, Concordia University, 7141 Sherbrooke Street West, Montréal, Québec, Canada H4B 1R6
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7
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Abstract
Insufficient flexibility of existing approaches to controlling the thermal transport in atomic monolayers limits their capability for use in many applications. Here, we examine the means of electrode doping to control the thermal flux Q due to phonons propagating along the atomic monolayer. We found that the frequency of the electron-restricted phonon scattering strongly depends on the concentration nC. of the electric charge carriers, established by the electric potentials applied to local gates. As a result of the electrode doping, nC is increased, causing a sharp rise in both the electrical conductivity and Seebeck coefficient, while the thermal conductivity tumbles. Therefore, the effect of the thermal transistor improves the figure of merit of nanoelectronic circuits.
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Affiliation(s)
- S E Shafranjuk
- Physics and Astronomy Department, Northwestern University, Evanston, IL 60208, USA.
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8
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El Fatimy A, Myers-Ward RL, Boyd AK, Daniels KM, Gaskill DK, Barbara P. Epitaxial graphene quantum dots for high-performance terahertz bolometers. NATURE NANOTECHNOLOGY 2016; 11:335-338. [PMID: 26727199 DOI: 10.1038/nnano.2015.303] [Citation(s) in RCA: 39] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2015] [Accepted: 11/20/2015] [Indexed: 06/05/2023]
Abstract
Light absorption in graphene causes a large change in electron temperature due to the low electronic heat capacity and weak electron-phonon coupling. This property makes graphene a very attractive material for hot-electron bolometers in the terahertz frequency range. Unfortunately, the weak variation of electrical resistance with temperature results in limited responsivity for absorbed power. Here, we show that, due to quantum confinement, quantum dots of epitaxial graphene on SiC exhibit an extraordinarily high variation of resistance with temperature (higher than 430 MΩ K(-1) below 6 K), leading to responsivities of 1 × 10(10) V W(-1), a figure that is five orders of magnitude higher than other types of graphene hot-electron bolometer. The high responsivity, combined with an extremely low electrical noise-equivalent power (∼2 × 10(-16) W Hz(-1/2) at 2.5 K), already places our bolometers well above commercial cooled bolometers. Additionally, we show that these quantum dot bolometers demonstrate good performance at temperature as high as 77 K.
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Affiliation(s)
- Abdel El Fatimy
- Department of Physics, Georgetown University, Washington, Washington DC 20057, USA
| | | | - Anthony K Boyd
- US Naval Research Laboratory, Washington, Washington DC 20375, USA
| | - Kevin M Daniels
- US Naval Research Laboratory, Washington, Washington DC 20375, USA
| | - D Kurt Gaskill
- US Naval Research Laboratory, Washington, Washington DC 20375, USA
| | - Paola Barbara
- Department of Physics, Georgetown University, Washington, Washington DC 20057, USA
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Campos BB, Oliva MM, Contreras-Cáceres R, Rodriguez-Castellón E, Jiménez-Jiménez J, da Silva JCE, Algarra M. Carbon dots on based folic acid coated with PAMAM dendrimer as platform for Pt(IV) detection. J Colloid Interface Sci 2016; 465:165-73. [DOI: 10.1016/j.jcis.2015.11.059] [Citation(s) in RCA: 37] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/12/2015] [Revised: 11/19/2015] [Accepted: 11/23/2015] [Indexed: 02/06/2023]
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10
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Wang L, Chen X, Lu W. Intrinsic photo-conductance triggered by the plasmonic effect in graphene for terahertz detection. NANOTECHNOLOGY 2016; 27:035205. [PMID: 26655800 DOI: 10.1088/0957-4484/27/3/035205] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Terahertz (THz) technology is becoming more eminent for applications in diverse areas including biomedical imaging, communication, security and astronomy. However, THz detection still has some challenges due to the lack of sources and detectors despite decades of considerable effort. The appearance of graphene and its gapless spectrum enable their applications in sensitive detection of light over a very wide energy spectrum from ultraviolet, infrared to terahertz. Several mechanisms in graphene for THz detection have been proposed, such as photo-thermoelectric, Dyakonov-Shur (DS) and bolometric effects. Here, we propose a photoconductive mechanism assisted by plasma wave in a graphene field-effect transistor (FET). Sensitive response to THz radiation can be realized far below the interband transition at room temperature. The response is due to the contributions of both plasma drag and convection effects. The two effects can both trigger multiple potential wells along the channel, which are different from other quantum-transition mechanisms. The photoconductive effects can be explored in both periodic and non-periodic systems and can be substantially enhanced under the electric field. They could reduce the burden of structural complexity compared to other mechanisms like unilateral thermoelectric and DS detection. This paves the way for more judicious photo-detector design for versatile THz applications.
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Affiliation(s)
- Lin Wang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, Shanghai 200083, People's Republic of China. Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
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