Hierarchical three-dimensional layer-by-layer assembly of carbon nanotube wafers for integrated nanoelectronic devices

Nanoscale Patterning of Carbon Nanotubes: Techniques, Applications, and Future

Carbon nanotube (CNT) devices and electronics are achieving maturity and directly competing or surpassing devices that use conventional materials. CNTs have demonstrated ballistic conduction, minimal scaling effects, high current capacity, low power requirements, and excellent optical/photonic properties; making them the ideal candidate for a new material to replace conventional materials in next-generation electronic and photonic systems. CNTs also demonstrate high stability and flexibility, allowing them to be used in flexible, printable, and/or biocompatible electronics. However, a major challenge to fully commercialize these devices is the scalable placement of CNTs into desired micro/nanopatterns and architectures to translate the superior properties of CNTs into macroscale devices. Precise and high throughput patterning becomes increasingly difficult at nanoscale resolution, but it is essential to fully realize the benefits of CNTs. The relatively long, high aspect ratio structures of CNTs must be preserved to maintain their functionalities, consequently making them more difficult to pattern than conventional materials like metals and polymers. This review comprehensively explores the recent development of innovative CNT patterning techniques with nanoscale lateral resolution. Each technique is critically analyzed and applications for the nanoscale-resolution approaches are demonstrated. Promising techniques and the challenges ahead for future devices and applications are discussed.

One-Step Fabrication of 3D Nanohierarchical Nickel Nanomace Array To Sinter with Silver NPs and the Interfacial Analysis

Three-dimensional (3D) nanohierarchical Ni nanomace (Ni NM) array was fabricated on copper substrate by only one step with electroplating method, the unique structure was covered with Au film (Ni/Au NM) without changing its morphology, and in the following step, it was sintered with silver nanoparticle (Ag NP) paste. The structure of the Ni NM array and its surface morphology were characterized by X-ray diffraction, scanning electron microscope (SEM), and atomic force microscope. The sintered interface was investigated by SEM, transmission electron microscopy, and energy-dispersive X-ray spectroscopy to analyze the sintering mechanism. The results showed that a metallurgical bond was successfully achieved at 250 °C without any gas or vacuum shield and extra pressure. The Cu substrate with Ni/Au NM array was able to join with the Ag NP paste without obvious voids. Due to the compatible chemical potential between Ag NPs and Ni/Au NM array, the Au element was able to diffuse into the Ag layer with about 800 nm distance. Based on the excellent 3D nanohierarchical structure, the shear strength of Ni/Au NM array was 6 times stronger than the flat Ni/Au coated substrate. It turned out that the substrate surface played a crucial role in improving the shear strength and sintering efficiency. The 3D Ni NM array had achieved an excellent bonding interface and had great potential application in the microelectronics packaging field.

Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based On Two-Layer Stacks of Single-Walled Carbon Nanotube Networks

We have proposed and fabricated stable and repeatable, flexible, single-walled carbon nanotube (SWCNT) thin film transistor (TFT) complementary metal-oxide-semiconductor (CMOS) integrated circuits based on a three-dimensional (3D) structure. Two layers of SWCNT-TFT devices were stacked, where one layer served as n-type devices and the other one served as p-type devices. On the basis of this method, it is able to save at least half of the area required to construct an inverter and make large-scale and high-density integrated CMOS circuits easier to design and manufacture. The 3D flexible CMOS inverter gain can be as high as 40, and the total noise margin is more than 95%. Moreover, the input and output voltage of the inverter are exactly matched for cascading. 3D flexible CMOS NOR, NAND logic gates, and 15-stage ring oscillators were fabricated on PI substrates with high performance as well. Stable electrical properties of these circuits can be obtained with bending radii as small as 3.16 mm, which shows that such a 3D structure is a reliable architecture and suitable for carbon nanotube electrical applications in complex flexible and wearable electronic devices.

Nano-scale, planar and multi-tiered current pathways from a carbon nanotube-copper composite with high conductivity, ampacity and stability

New lithographically processable materials with high ampacity are in demand to meet the increasing requirement for high operational current density at high temperatures existing in current pathways within electronic devices. To meet this demand, we report an approach to fabricate a high ampacity (∼100 times higher than Cu) carbon nanotube-copper (CNT-Cu) composite into a variety of complex nano-scale, planar and multi-tiered current pathways. The approach involved the use of a two-stage electrodeposition of copper into a pre-patterned template of porous, thin CNT sheets acting as the electrode. The versatility of this approach enabled the realization of completely suspended multi-tier, dielectric-less 'air-gap' CNT-Cu circuits that could be electrically isolated from each other and are challenging to fabricate with pure Cu or any metal. Importantly, all such complex structures, ranging from 500 nm to 20 μm in width, exhibited ∼100-times higher ampacity than any known metal, with comparable electrical conductivity as Cu. In addition, CNT-Cu structures also exhibited a superior temperature stability compared to the ∼10-times wider Cu counterparts. We believe that the combination of our approach and the properties demonstrated here are vital achievements for the future development of efficient and powerful electrical devices.

Cytochrome c assembly on fullerene nanohybrid metal oxide ultrathin films

The immobilization of Cyt. c (cytochrome c) on C₆₀ (fullerene) nanohybrid TiO₂ (titanium dioxide) gel films assembled with C₆₀, Ti(O–ⁿBu)₄ and Cyt. c was realized by a surface sol–gel process.