Optical control of internal electric fields in band gap-graded InGaN nanowires

Ultrafast carrier dynamics of conformally grown semi-polar (112[combining macron]2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires

The growth of semi-polar (112[combining macron]2) GaN/InGaN multiple-quantum-well (MQW) co-axial heterostructure shells around m-axial GaN core nanowires on a Si substrate using MOCVD is reported for the first time. The core GaN nanowire and GaN/InGaN MQW shells are grown in a two-step growth sequence of vapor-liquid-solid and vapor-solid growth modes. The luminescence and carrier dynamics of GaN/InGaN MQW coaxial nanowires are studied by photoluminescence, cathodoluminescence, and low temperature time-resolved photoluminescence (TRPL). The emission is tuned from 430 nm to 590 nm by increasing the InGaN QW thickness. The non-single exponential decay measured by low-temperature TRPL was attributed to the indium fluctuations in the InGaN QW. The ultrafast radiative lifetime was measured from 14 ps to 26 ps with different emission wavelengths at a very high internal quantum efficiency up to 68%. An ultrafast carrier lifetime was assigned to the growth of the InGaN QW on semi-polar (112[combining macron]2) growth facet and the improved carrier collection efficiency due to the radial growth of the GaN/InGaN MQW shells. Such an ultrafast carrier dynamics of NWs provides a meaningful active medium for high speed optoelectronic applications.

Low-Dimensional Materials and State-of-the-Art Architectures for Infrared Photodetection

Infrared photodetectors are gaining remarkable interest due to their widespread civil and military applications. Low-dimensional materials such as quantum dots, nanowires, and two-dimensional nanolayers are extensively employed for detecting ultraviolet to infrared lights. Moreover, in conjunction with plasmonic nanostructures and plasmonic waveguides, they exhibit appealing performance for practical applications, including sub-wavelength photon confinement, high response time, and functionalities. In this review, we have discussed recent advances and challenges in the prospective infrared photodetectors fabricated by low-dimensional nanostructured materials. In general, this review systematically summarizes the state-of-the-art device architectures, major developments, and future trends in infrared photodetection.

Four-Dimensional Ultrafast Electron Microscopy: Insights into an Emerging Technique

Four-dimensional ultrafast electron microscopy (4D-UEM) is a novel analytical technique that aims to fulfill the long-held dream of researchers to investigate materials at extremely short spatial and temporal resolutions by integrating the excellent spatial resolution of electron microscopes with the temporal resolution of ultrafast femtosecond laser-based spectroscopy. The ingenious use of pulsed photoelectrons to probe surfaces and volumes of materials enables time-resolved snapshots of the dynamics to be captured in a way hitherto impossible by other conventional techniques. The flexibility of 4D-UEM lies in the fact that it can be used in both the scanning (S-UEM) and transmission (UEM) modes depending upon the type of electron microscope involved. While UEM can be employed to monitor elementary structural changes and phase transitions in samples using real-space mapping, diffraction, electron energy-loss spectroscopy, and tomography, S-UEM is well suited to map ultrafast dynamical events on materials surfaces in space and time. This review provides an overview of the unique features that distinguish these techniques and also illustrates the applications of both S-UEM and UEM to a multitude of problems relevant to materials science and chemistry.

Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy

Managing trap states and understanding their role in ultrafast charge-carrier dynamics, particularly at surface and interfaces, remains a major bottleneck preventing further advancements and commercial exploitation of nanowire (NW)-based devices. A key challenge is to selectively map such ultrafast dynamical processes on the surfaces of NWs, a capability so far out of reach of time-resolved laser techniques. Selective mapping of surface dynamics in real space and time can only be achieved by applying four-dimensional scanning ultrafast electron microscopy (4D S-UEM). Charge carrier dynamics are spatially and temporally visualized on the surface of InGaN NW arrays before and after surface passivation with octadecylthiol (ODT). The time-resolved secondary electron images clearly demonstrate that carrier recombination on the NW surface is significantly slowed down after ODT treatment. This observation is fully supported by enhancement of the performance of the light emitting device. Direct observation of surface dynamics provides a profound understanding of the photophysical mechanisms on materials' surfaces and enables the formulation of effective surface trap state management strategies for the next generation of high-performance NW-based optoelectronic devices.