Tunable Kondo effect in a single donor atom

Phase-Coherent Dynamics of Quantum Devices with Local Interactions

This review illustrates how Local Fermi Liquid (LFL) theories describe the strongly correlated and coherent low-energy dynamics of quantum dot devices. This approach consists in an effective elastic scattering theory, accounting exactly for strong correlations. Here, we focus on the mesoscopic capacitor and recent experiments achieving a Coulomb-induced quantum state transfer. Extending to out-of-equilibrium regimes, aimed at triggered single electron emission, we illustrate how inelastic effects become crucial, requiring approaches beyond LFLs, shedding new light on past experimental data by showing clear interaction effects in the dynamics of mesoscopic capacitors.

Unusual Quantum Transport Mechanisms in Silicon Nano-Devices

Silicon-based materials have been the leading platforms for the development of classical information science and are now one of the major contenders for future developments in the field of quantum information science. In this short review paper, while discussing only some examples, I will describe how silicon Complementary-Metal-Oxide-Semiconductor (CMOS) compatible materials have been able to provide platforms for the observation of some of the most unusual transport phenomena in condensed matter physics.

Wave function control over a single donor atom

Single donor atoms in semiconductor nanostructures are attractive basic components for quantum device applications. In this work, we demonstrate the ability to manipulate the wave function of a single donor electron with an electric field. The deformation of the wave function is probed by the tunnel current which, furthermore, allows for the determination of the location of the atom in the device. This experiment demonstrates the control necessary for the utilization of single donors in quantum electronics.

Magnetic-field probing of an SU(4) Kondo resonance in a single-atom transistor

Semiconductor devices have been scaled to the point that transport can be dominated by only a single dopant atom. As a result, in a Si fin-type field effect transistor Kondo physics can govern transport when one electron is bound to the single dopant. Orbital (valley) degrees of freedom, apart from the standard spin, strongly modify the Kondo effect in such systems. Owing to the small size and the s-like orbital symmetry of the ground state of the dopant, these orbital degrees of freedom do not couple to external magnetic fields which allows us to tune the symmetry of the Kondo effect. Here we study this tunable Kondo effect and demonstrate experimentally a symmetry crossover from an SU(4) ground state to a pure orbital SU(2) ground state as a function of magnetic field. Our claim is supported by theoretical calculations that unambiguously show that the SU(2) symmetric case corresponds to a pure valley Kondo effect of fully polarized electrons.

Modeling light trapping in nanostructured solar cells

The integration of nanophotonic and plasmonic structures with solar cells offers the ability to control and confine light in nanoscale dimensions. These nanostructures can be used to couple incident sunlight into both localized and guided modes, enhancing absorption while reducing the quantity of material. Here we use electromagnetic modeling to study the resonances in a solar cell containing both plasmonic metal back contacts and nanostructured semiconductor top contacts, identify the local and guided modes contributing to enhanced absorption, and optimize the design. We then study the role of the different interfaces and show that Al is a viable plasmonic back contact material.

Quantum readout and fast initialization of nuclear spin qubits with electric currents

Nuclear spin qubits have the longest coherence times in the solid state, but their quantum readout and initialization is a great challenge. We present a theory for the interaction of an electric current with the nuclear spins of donor impurities in semiconductors. The theory yields a sensitivity criterion for quantum detection of nuclear spin states using electrically detected magnetic resonance, as well as an all-electrical method for fast nuclear spin qubit initialization.

Spin coupling and relaxation inside molecule-metal contacts

Advances in molecular electronics depend on the ability to control the charge and spin of single molecules at the interface with a metal. Here we show that bonding of metal-organic complexes to a metallic substrate induces the formation of coupled metal-ligand spin states, increasing the spin degeneracy of the molecules and opening multiple spin relaxation channels. Scanning tunnelling spectroscopy reveals the sign and magnitude of intramolecular exchange coupling as well as the orbital character of the spin-polarized molecular states. We observe coexisting Kondo, spin, and vibrational inelastic channels in a single molecule, which lead to pronounced intramolecular variations of the conductance and spin dynamics. The spin degeneracy of the molecules can be controlled by artificially fabricating molecular clusters of different size and shape. By comparing data for vibronic and spin-exchange excitations, we provide a positive test of the universal scaling properties of inelastic Kondo processes having different physical origin.

Inelastic electron tunneling spectroscopy of a single nuclear spin

Detection of a single nuclear spin constitutes an outstanding problem in different fields of physics such as quantum computing or magnetic imaging. Here we show that the energy levels of a single nuclear spin can be measured by means of inelastic electron tunneling spectroscopy (IETS). We consider two different systems, a magnetic adatom probed with scanning tunneling microscopy and a single Bi dopant in a silicon nanotransistor. We find that the hyperfine coupling opens new transport channels which can be resolved at experimentally accessible temperatures. Our simulations evince that IETS yields information about the occupations of the nuclear spin states, paving the way towards transport-detected single nuclear spin resonance.

Impact of valley polarization on the resistivity in two dimensions

We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.