Quantum metallicity in a two-dimensional insulator

Rayleigh approximation to ground state of the Bose and Coulomb glasses

Glasses are rigid systems in which competing interactions prevent simultaneous minimization of local energies. This leads to frustration and highly degenerate ground states the nature and properties of which are still far from being thoroughly understood. We report an analytical approach based on the method of functional equations that allows us to construct the Rayleigh approximation to the ground state of a two-dimensional (2D) random Coulomb system with logarithmic interactions. We realize a model for 2D Coulomb glass as a cylindrical type II superconductor containing randomly located columnar defects (CD) which trap superconducting vortices induced by applied magnetic field. Our findings break ground for analytical studies of glassy systems, marking an important step towards understanding their properties.

Electrostatic tuning of the proximity-induced exchange field in EuS/Al bilayers

We demonstrate that the proximity-induced exchange field H(ex) in ferromagnetic-paramagnetic bilayers can be modulated with an electric field. An electrostatic gate arrangement is used to tune the magnitude of H(ex) in the Al component of EuS/Al bilayers. In samples with H(ex)~2 T, we were able to produce modulations of ±10 mT with the application of perpendicular electric fields of the order of ±10(6) V/cm. We discuss several possible mechanisms accounting for the electric field's influence on the interfacial coupling between the Al layer and the ferromagnetic insulator EuS, along with the prospects of producing a superconducting field-effect transistor.

Exchange field-mediated magnetoresistance in the correlated insulator phase of Be films

We present a study of the proximity effect between a ferromagnet and a paramagnetic metal of varying disorder. Thin beryllium films are deposited onto a 5 nm thick layer of the ferromagnetic insulator EuS. This bilayer arrangement induces an exchange field, H(ex), of a few tesla in low-resistance Be films with sheet resistance R≪R(Q), where R(Q)=h/e2 is the quantum resistance. We show that H(ex) survives in very high-resistance films and, in fact, appears to be relatively insensitive to the Be disorder. We exploit this fact to produce a giant low-field magnetoresistance in the correlated-insulator phase of Be films with R≫R(Q).

Phase diagram of electron systems near the superconductor-insulator transition

The zero temperature phase diagram of Cooper pairs exposed to disorder and a magnetic field is determined theoretically from a variational approach. Four distinct phases are found: a Bose and a Fermi insulating, a metallic, and a superconducting phase, respectively. The results explain the giant negative magnetoresistance found experimentally in In-O, TiN, Be and high-T(c) materials.

Observation of giant positive magnetoresistance in a Cooper pair insulator

Ultrathin amorphous Bi films, patterned with a nanohoneycomb array of holes, can exhibit an insulating phase with transport dominated by the incoherent motion of Cooper pairs (CP) of electrons between localized states. Here, we show that the magnetoresistance (MR) of this Cooper pair insulator (CPI) phase is positive and grows exponentially with decreasing temperature T, for T well below the pair formation temperature. It peaks at a field estimated to be sufficient to break the pairs and then decreases monotonically into a regime in which the film resistance assumes the T dependence appropriate for weakly localized single electron transport. We discuss how these results support proposals that the large MR peaks in other unpatterned, ultrathin film systems disclose a CPI phase and provide new insight into the CP localization.

A magnetic field sensitive interfacial metallic state in a crystalline insulator

We report strongly magnetic field dependent transport in crystalline strontium titanate at the interface with an ion beam treated nanolayer. Microscopy shows that this interface is atomically sharp. The results obtained suggest a chemical potential driven transfer of high mobility electrons through the interface into the crystal. This phenomenon provides a strategy for device fabrication without disorder in the conduction channel. We show, for nonmagnetic metals, magnetoresistance and plateau-like Hall magneto-dependence, possibly caused by electron cyclotron effects in a strongly correlated quasi-two-dimensional Fermi gas.

Localized superconductivity in the quantum-critical region of the disorder-driven superconductor-insulator transition in TiN thin films

We investigate low-temperature transport properties of thin TiN superconducting films in the vicinity of the disorder-driven superconductor-insulator transition. In a zero magnetic field, we find an extremely sharp separation between superconducting and insulating phases, evidencing a direct superconductor-insulator transition without an intermediate metallic phase. At moderate temperatures, in the insulating films we reveal thermally activated conductivity with the magnetic field-dependent activation energy. At very low temperatures, we observe a zero-conductivity state, which is destroyed at some depinning threshold voltage V{T}. These findings indicate the formation of a distinct collective state of the localized Cooper pairs in the critical region at both sides of the transition.

Quantum metallicity on the high-field side of the superconductor-insulator transition

We investigate ultrathin superconducting TiN films, which are very close to the localization threshold. Perpendicular magnetic field drives the films from the superconducting to an insulating state, with very high resistance. Further increase of the magnetic field leads to an exponential decay of the resistance towards a finite value. In the limit of low temperatures, the saturation value can be very accurately extrapolated to the universal quantum resistance h/e2. Our analysis suggests that at high magnetic fields a new ground state, distinct from the normal metallic state occurring above the superconducting transition temperature, is formed. A comparison with other studies on different materials indicates that the quantum metallic phase following the magnetic-field-induced insulating phase is a generic property of systems close to the disorder-driven superconductor-insulator transition.

Eigenfunction fractality and pseudogap state near the superconductor-insulator transition

We develop a theory of a pseudogap state appearing near the superconductor-insulator (SI) transition in strongly disordered metals with an attractive interaction. We show that such an interaction combined with the fractal nature of the single-particle wave functions near the mobility edge leads to an anomalously large single-particle gap in the superconducting state near SI transition that persists and even increases in the insulating state long after the superconductivity is destroyed. We give analytic expressions for the value of the pseudogap in terms of the inverse participation ratio of the corresponding localization problem.

Superconductivity-related insulating behavior

We present the results of an experimental study of superconducting, disordered, thin films of amorphous indium oxide. These films can be driven from the superconducting phase to a reentrant insulating state by the application of a perpendicular magnetic field (B). We find that the high-B insulator exhibits activated transport with a characteristic temperature, TI. TI has a maximum value (TpI) that is close to the superconducting transition temperature (Tc) at B=0, suggesting a possible relation between the conduction mechanisms in the superconducting and insulating phases. Tp(I) and Tc display opposite dependences on the disorder strength.