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Enhancement in surface mobility and quantum transport of Bi2-xSbxTe3-ySey topological insulator by controlling the crystal growth conditions

Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods on the synthesis of single crystal stoichiometric BiSbTeSe₂ (BSTS). Three types of BSTS samples are prepared using three different methods, namely melting growth (MG), Bridgman growth (BG) and two-step melting-Bridgman growth (MBG). Our results show that the crystal quality of the BSTS depend strongly on the growth method. Crystal structure and composition analyses suggest a better homogeneity and highly-ordered crystal structure in BSTS grown by MBG method. This correlates well to sample electrical transport properties, where a substantial improvement in surface mobility is observed in MBG BSTS devices. The enhancement in crystal quality and mobility allow the observation of well-developed quantum Hall effect at low magnetic field.

Spin-Flip and Element-Sensitive Electron Scattering in the BiAg2 Surface Alloy

Heavy metal surface alloys represent model systems to study the correlation between electron scattering, spin-orbit interaction, and atomic structure. Here, we investigate the electron scattering from the atomic steps of monolayer BiAg_{2} on Ag(111) using quasiparticle interference measurements and density functional theory. We find that intraband transitions between states of opposite spin projection can occur via a spin-flip backward scattering mechanism driven by the spin-orbit interaction. The spin-flip scattering amplitude depends on the chemical composition of the steps, leading to total confinement for pure Bi step edges, and considerable leakage for mixed Bi-Ag step edges. Additionally, the different localization of the occupied and unoccupied surface bands at Ag and Bi sites leads to a spatial shift of the scattering potential barrier at pure Bi step edges.