Photoemission-based microelectronic devices

Tungsten-SiO2-Based Planar Field Emission Microtriodes with Different Electrode Topologies

This study examines the electrical properties and layer quality of field emission microtriodes that have planar electrode geometry and are based on tungsten (W) and silicon dioxide (SiO2). Two types of microtriodes were analyzed: one with a multi-tip cathode fabricated using photolithography (PL) and the other with a single-tip cathode fabricated using a focused ion beam (FIB). Atomic force microscopy (AFM) analysis revealed surface roughness of the W layer in the order of several nanometers (Ra = 3.8 ± 0.5 nm). The work function values of the Si substrate, SiO2 layer, and W layer were estimated using low-energy ultraviolet photoelectron emission (PE) spectroscopy and were 4.71 eV, 4.85 eV, and 4.67 eV, respectively. The homogeneity of the W layer and the absence of oxygen and silicon impurities were confirmed via X-ray photoelectron spectroscopy (XPS). The PL microtriode and the FIB microtriode exhibited turn-on voltages of 110 V and 50 V, respectively, both demonstrating a field emission current of 0.4 nA. The FIB microtriode showed significantly improved field emission efficiency compared to the PL microtriode, attributed to a higher local electric field near the cathode.

A tunable photo-electric co-excited point electron source: low-intensity excitation emission and structure-modulated spectrum-selection

The development of a point electron source requires an efficient excitation mode with low energy consumption, flexible tunability, and high performance. In particular for traditional electron emission cathode materials, it is necessary to expand the function of this aspect to meet application demands in many emerging fields. In this study, we propose a photo-electric co-excited scheme to drive a tungsten (W) needle nano-cold-cathode. The developed W needle cathode has been demonstrated to show electron emission performance with a narrow energy spread of 0.76 eV and a high brightness of 4 × 10⁹ A m^-2 sr^-1 V^-1. This could be achieved through low-intensity co-excitation, including an electrostatic field below ∼0.5 V μm^-1 and a laser intensity at ∼10 W cm^-2 level. Based on this co-excitation, the electron emission further exhibited a tunable property relative to the intrinsic properties of the incident light, such as optical frequency and polarization, which is shown to be directly modulated by the structure of the W needle nano-cold-cathode. This work provides a choice to achieve tunable, miniaturized and integrated vacuum micro- and nano-electronic devices.

Plasmonic phenomena in molecular junctions: principles and applications

Molecular junctions are building blocks for constructing future nanoelectronic devices that enable the investigation of a broad range of electronic transport properties within nanoscale regions. Crossing both the nanoscopic and mesoscopic length scales, plasmonics lies at the intersection of the macroscopic photonics and nanoelectronics, owing to their capability of confining light to dimensions far below the diffraction limit. Research activities on plasmonic phenomena in molecular electronics started around 2010, and feedback between plasmons and molecular junctions has increased over the past years. These efforts can provide new insights into the near-field interaction and the corresponding tunability in properties, as well as resultant plasmon-based molecular devices. This Review presents the latest advancements of plasmonic resonances in molecular junctions and details the progress in plasmon excitation and plasmon coupling. We also highlight emerging experimental approaches to unravel the mechanisms behind the various types of light-matter interactions at molecular length scales, where quantum effects come into play. Finally, we discuss the potential of these plasmonic-electronic hybrid systems across various future applications, including sensing, photocatalysis, molecular trapping and active control of molecular switches.

A planar plasmonic nano-gap and its array for enhancing light-matter interactions at the nanoscale

Gap surface plasmon (GSP) modes, the localized electromagnetic modes existing between two metal structures separated by a nano-gap, are able to support subwavelength confinement and enhancement of a light field upon resonance excitation. Such features can greatly facilitate various light-matter interactions at the nanoscale. Here, we demonstrate a planar nano-gap architecture existing between a pair of tip-shaped gold pads. The nano-gap gives rise to plasmon resonances with strong light confinement close to the tip surfaces in the visible to near-infrared spectral region. Accordingly, we showed that the plasmonic gold nano-gap can exhibit strong intrinsic second-harmonic generation (SHG) and significantly enhance the Raman scattering signal from small molecules. Furthermore, by arranging the nano-gap into arrays, a stronger SHG signal can be obtained. In addition, the surface enhanced Raman scattering (SERS) activity is also improved by two orders of magnitude compared to that of a single nano-gap. Overall, the findings in our study have demonstrated the potential applications of a plasmonic nano-gap and its arrays for signal generation and sensitive chemical sensing at the nanoscale.

Modeling of Laser-Induced Plasmon Effects in GNS-DLC-Based Material for Application in X-ray Source Array Sensors

An important direction in the development of X-ray computed tomography sensors in systems with increased scanning speed and spatial resolution is the creation of an array of miniature current sources. In this paper, we describe a new material based on gold nanostars (GNS) embedded in nanoscale diamond-like carbon (DLC) films (thickness of 20 nm) for constructing a pixel current source with photoinduced electron emission. The effect of localized surface plasmon resonance in GNS on optical properties in the wavelength range from UV to near IR, peculiarities of localization of field and thermal sources, generation of high-energy hot electrons, and mechanisms of their transportation in vacuum are investigated. The advantages of the proposed material and the prospects for using X-ray computed tomography in the matrix source are evaluated.

Direct imaging of plasma waves using ultrafast electron microscopy

A femtosecond plasma imaging modality based on a new development of ultrafast electron microscope is introduced. We investigated the laser-induced formation of high-temperature electron microplasmas and their subsequent non-equilibrium evolution. Based on a straightforward field imaging principle, we directly retrieve detailed information about the plasma dynamics, including plasma wave structures, particle densities, and temperatures. We discover that directly subjected to a strong magnetic field, the photo-generated microplasmas manifest in novel transient cyclotron echoes and form new wave states across a broad range of field strengths and different laser fluences. Intriguingly, the transient cyclotron waves morph into a higher frequency upper-hybrid wave mode with the dephasing of local cyclotron dynamics. The quantitative real-space characterizations of the non-equilibrium plasma systems demonstrate the feasibilities of a new microscope system in studying the plasma dynamics or transient electric fields with high spatiotemporal resolutions.

Plasmon-Enhanced Resonant Photoemission Using Atomically Thick Dielectric Coatings

By proposing an atomically thick dielectric coating on a metal nanoemitter, we theoretically show that the optical field tunneling of ultrafast-laser-induced photoemission can occur at an ultralow incident field strength of 0.03 V/nm. This coating strongly confines plasmonic fields and provides secondary field enhancement beyond the geometrical plasmon field enhancement effect, which can substantially reduce the barrier and enable more efficient photoemission. We numerically demonstrate that a 1 nm thick layer of SiO₂ around a Au-nanopyramid will enhance the resonant photoemission current density by 2 orders of magnitude, where the transition from multiphoton absorption to optical field tunneling is accessed at an incident laser intensity at least 10 times lower than that of the bare nanoemitter. The effects of the coating properties such as refractive index, thickness, and geometrical settings are studied, and tunable photoemission is numerically demonstrated by using different ultrafast lasers. Our approach can also directly be extended to nonmetal emitters, to-for example-2D material coatings, and to plasmon-induced hot carrier generation.

A Visible and Near-IR Tunnel Photosensor with a Nanoscale Metal Emitter: The Effect of Matching of Hot Electrons Localization Zones and a Strong Electrostatic Field

The results of the research and design of a novel vacuum photosensor with a planar molybdenum blade structure are presented. The advanced prototype implements the principle of an increasing penetrability of the Schottky barrier for the metal–vacuum interfaces under the action of an external strong electrostatic field. Theoretical and experimental substantiation of the photosensor performance in a wide range of wavelengths (from 430 to 680 nm and from 800 to 1064 nm) beyond the threshold of the classical photoelectric effect is given. The finite element method was applied to calculate distribution of the optical and electrostatic fields inside the photosensor structure. The sensor current-to-light response was studied using the periodic pulsed irradiation with the tunable wavelength. It was shown that the nanoscale localization zones of two types are formed near the surface of the blade tip: the zone of an increased concentration of hot electrons localized inside the molybdenum blade, and the zone with an increased strength of the external electrostatic field localized outside the blade. In general, the mutual positions of these zones may not coincide, whereas the position of the first-type localization zone significantly varies with the changes in the wavelength of the irradiating light. This causes features in the spectrum of the quantum yield of the photosensor such as expressed non-monotonic behavior and occurrence of sharp dips. The design of the photosensor that provides matching of the positions for both types of localization zones was proposed; the manufactured prototypes of the designed device were experimentally studied. In the designed photosensor, the ballistic transport of photoelectrons in the vacuum gap with a strong field provides a possibility for the creation of ultra-fast optoelectronic devices, such as modulators, detectors, and generators.

An in situ characterization technique for electron emission behavior under a photo-electric-common-excitation field: study on the vertical few-layer graphene individuals

The in situ characterization on the individuals offers an effective way to explore the dynamic behaviors and underlying physics of materials at the nanoscale, and this is of benefit for actual applications. In the field of vacuum micro-nano electronics, the existing in situ techniques can obtain the material information such as structure, morphology and composition in the process of electron emission driven by a single source of excitation. However, the relevant process and mechanism become more complicated when two or more excitation sources are commonly acted on the emitters. In this paper, we present an in situ nano characterization technique to trigger and record the electron emission behavior under the photo-electric-common-excitation multiple physical fields. Specifically, we probed into the in situ electron emission from an individual vertical few-layer graphene (vFLG) emitter under a laser-plus-electrostatic driving field. Electrons were driven out from the vFLG's emission edge, operated in situ under an external electrostatic field coupled with a 785 nm continuous-wave laser-triggered optical field. The incident light has been demonstrated to significantly improve the electron emission properties of graphene, which were recorded as an obvious decrease of the turn-on voltage, a higher emission current by factor of 35, as well as a photo-response on-off ratio as high as 5. More importantly, during their actual electron emission process, a series of in situ characterizations such as SEM observation and Raman spectra were used to study the structure, composition and even real-time Raman frequency changes of the emitters. These information can further reveal the key factors for the electron emission properties, such as field enhancement, work function and real-time surface temperature. Thereafter, the emission mechanism of vFLG in this study has been semi-quantitatively demonstrated to be the two concurrent processes of photon-assisted thermal enhanced field emission and photo field emission.

Spatial- and energy-resolved photoemission electron from plasmonic nanoparticles in multiphoton regime

Spatial-resolved photoelectron spectra have been observed from plasmonic metallic nanostructure and flat metal surface by a combination of time-of-flight photoemission electron microscope and femtosecond laser oscillator. The photoemission's main contribution is at localized 'hot spots,' where the plasmonic effect dominates and multiphoton photoemission is confirmed as the responsible mechanism for emission in both samples. Photoelectron spectra from hot spots exponentially decay in high energy regimes, smearing out the Fermi edge in Au flat surface. This phenomenon is explained by the emergence of above threshold photoemission that is induced by plasmonic effect; other competing mechanisms are ruled out. It is the first time that we have observed the emergence of high kinetic energy photoelectron in weak field region around 'hot spot.' We attribute the emergence of high kinetic energy photoelectron to the drifting of the liberated electron from plasmonic hot spot and driven by the gradient of plasmonic field.

A Plasmon-Mediated Electron Emission Process

Light-driven electron emission plays an important role in modern optoelectronic devices. However, such a process usually requires a light field with either a high intensity or a high frequency, which is not favorable for its implementations and difficult for its integrations. To solve these issues, we propose to combine plasmonic nanostructures with nanoelectron emitters of low work function. In such a heterostructure, hot electrons generated by plasmon resonances upon light excitation can be directly injected into the adjacent emitter, which can subsequently be emitted into the vacuum. Electron emission of high efficiency can be obtained with light fields of moderate intensities and visible wavelengths, which is a plasmon-mediated electron emission (PMEE) process. We have demonstrated our proposed design using a gold-on-graphene (Au-on-Gr) nanostructure, which can have electron emission with light intensity down to 73 mW·cm^-2. It should be noted that the field electron emission is not involved in such a PMEE process. This proposal is of interest for applications including cold-cathode electron sources, advanced photocathodes, and micro- and nanoelectronic devices relying on free electrons.

Toward Plasmonic Tunnel Gaps for Nanoscale Photoemission Currents by On-Chip Laser Ablation

We demonstrate that prestructured metal nanogaps can be shaped on-chip to below 10 nm by femtosecond laser ablation. We explore the plasmonic properties and the nonlinear photocurrent characteristics of the formed tunnel junctions. The photocurrent can be tuned from multiphoton absorption toward the laser-induced strong-field tunneling regime in the nanogaps. We demonstrate that a unipolar ballistic electron current is achieved by designing the plasmonic junctions to be asymmetric, which allows ultrafast electronics on the nanometer scale.

Ultrafast switching of photoemission electron through quantum pathways interference in metallic nanostructure

The localized photoemission electron originating from the plasmonic "hot spots" in a metallic bowtie nanostructure can be separately switched on and off by adjusting the relative time delay between two orthogonally polarized laser pulses. The demonstrated femtosecond timing, nanometric spatial switching of multiphoton photoemission results from the interference of quantum pathways. Energy resolved measurement of the photoemission electrons further shows that the quantum pathway interference mechanism applies to control all the liberated electrons. The experimental results also show that the probability of electron emission through the quantum pathways from a plasmonic hot spot is determined by the localized emission response to the two incident laser pulses. These findings are of importance for controlling photoemission in ultrahigh spatiotemporal resolution in metallic plasmonic nanostructures.

Note: Multi-sheet light enables optical interference lithography

We propose and demonstrate a modified spatial filter-based single-shot lithography technique for fabricating an array of microfluidic channels. This is achieved by illuminating the photopolymer specimen with a multiple light sheet (MLS) pattern. Modified spatial filtering is employed in a cylindrical lens system to generate the MLS pattern. The transmission window [the difference (α - β) angle] of the spatial filter determines the characteristics of the pattern and the fabricated microfluidic channel array. After exposing to a negative photoresist (DPHPA monomer with rose bengal as the photoinitiator), this gives rise to an array of micro-fluidic channels (post development process). We studied the effect of micro-channel geometry (channel width, inter-channel separation, and aspect ratio) for varying exposure times that show near-linear dependence. The results show that the fabricated array has 7 prominent channels with an individual channel width and inter-channel separation of approximately 5 μm and 12 μm, respectively. The proposed technique enables selective plane patterning and reduces the overall cost for large-scale production.

Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarization

We demonstrate the control of multiphoton electron excitations in InAs nanowires (NWs) by altering the crystal structure and the light polarization. Using few-cycle, near-infrared laser pulses from an optical parametric chirped-pulse amplification system, we induce multiphoton electron excitations in InAs nanowires with controlled wurtzite (WZ) and zincblende (ZB) segments. With a photoemission electron microscope, we show that we can selectively induce multiphoton electron emission from WZ or ZB segments of the same wire by varying the light polarization. Developing ab initio GW calculations of first to third order multiphoton excitations and using finite-difference time-domain simulations, we explain the experimental findings: While the electric-field enhancement due to the semiconductor/vacuum interface has a similar effect for all NW segments, the second and third order multiphoton transitions in the band structure of WZ InAs are highly anisotropic in contrast to ZB InAs. As the crystal phase of NWs can be precisely and reliably tailored, our findings open up for new semiconductor optoelectronics with controllable nanoscale emission of electrons through vacuum or dielectric barriers.

Guiding Waves Along an Infinitesimal Line between Impedance Surfaces

We present a new electromagnetic mode that forms at the interface between two planar surfaces laid side by side in free space, effectively guiding energy along an infinitesimal, one-dimensional line. It is shown that this mode occurs when the boundaries have complementary surface impedances, and it is possible to control the mode confinement by altering their values correspondingly. The mode exhibits singular field enhancement, broad bandwidth, direction-dependent polarization, and robustness to certain defects. As a proof of concept, experimental results in the microwave regime are provided using patterned conducting sheets. Our proposed effective-medium-based approach is general, however, thus allowing for potential implementation up to optical frequencies. Our system is promising for applications including integrated photonics, sensing, switching, chiral quantum coupling, and reconfigurable waveguides.

Probing Gap Plasmons Down to Subnanometer Scales Using Collapsible Nanofingers

Gap plasmonic nanostructures are of great interest due to their ability to concentrate light into small volumes. Theoretical studies, considering quantum mechanical effects, have predicted the optimal spatial gap between adjacent nanoparticles to be in the subnanometer regime in order to achieve the strongest possible field enhancement. Here, we present a technology to fabricate gap plasmonic structures with subnanometer resolution, high reliability, and high throughput using collapsible nanofingers. This approach enables us to systematically investigate the effects of gap size and tunneling barrier height. The experimental results are consistent with previous findings as well as with a straightforward theoretical model that is presented here.