Gate control of the electron spin-diffusion length in semiconductor quantum wells

Optical Detection of Long Electron Spin Transport Lengths in a Monolayer Semiconductor

Using a spatially resolved optical pump-probe experiment, we measure the lateral transport of spin-valley polarized electrons over very long distances (tens of micrometers) in a single WSe_{2} monolayer. By locally pumping the Fermi sea of 2D electrons to a high degree of spin-valley polarization (up to 75%) using circularly polarized light, the lateral diffusion of the electron polarization can be mapped out via the photoluminescence induced by a spatially separated and linearly polarized probe laser. Up to 25% spin-valley polarization is observed at pump-probe separations up to 20  μm. Characteristic spin-valley diffusion lengths of 18±3  μm are revealed at low temperatures. The dependence on temperature, pump helicity, pump intensity, and electron density highlight the key roles played by spin relaxation time and pumping efficiency on polarized electron transport in monolayer semiconductors possessing spin-valley locking.

Noncontact Spin Pumping by Microwave Evanescent Fields

The angular momentum of evanescent light fields has been studied in nano-optics and plasmonics but not in the microwave regime. Here we predict noncontact pumping of electron spin currents in conductors by the evanescent stray fields of excited magnetic nanostructures. The coherent transfer of the photon to the electron spin is proportional to the g factor, which is large in narrow gap semiconductors and surface states of topological insulators. The spin pumping current is chiral when the spin susceptibility displays singularities that indicate collective states. However, 1D systems with linear dispersion at the Fermi energy, such as metallic carbon nanotubes, are an exception since spin pumping is chiral even without interactions.

Origin of Rashba Spin-Orbit Coupling in 2D and 3D Lead Iodide Perovskites

We studied spin dynamics of charge carriers in the superlattice-like Ruddlesden-Popper hybrid lead iodide perovskite semiconductors, 2D (BA)₂(MA)Pb₂I₇ (with MA = CH₃NH₃, and BA = CH₃(CH₂)₃NH₃), and 3D MAPbI₃ using the magnetic field effect (MFE) on conductivity and electroluminescence in their light emitting diodes (LEDs) at cryogenic temperatures. The semiconductors with distinct structural/bulk inversion symmetry breaking, when combined with colossal intrinsic spin-orbit coupling (SOC), theoretically give rise to giant Rashba-type SOC. We found that the magneto-conductance (MC) magnitude increases monotonically with the emission intensity and saturates at ≈0.05% and 0.11% for the MAPbI₃ and (BA)₂(MA)Pb₂I₇, respectively. The magneto-electroluminescence (MEL) response with similar line shapes as the MC response has a significantly larger magnitude, and essentially stays constant at ≈0.22% and ≈0.20% for MAPbI₃ and (BA)₂(MA)Pb₂I₇, respectively. The sign and magnitude of the MC and MEL responses can be quantitatively explained in the framework of the Δg-based excitonic model using rate equations. Remarkably, the width of the MEL response in those materials linearly increases with increasing the applied electric field, where the Rashba coefficient in (BA)₂(MA)Pb₂I₇ is estimated to be about 7 times larger than that in MAPbI₃. Our studies might have significant impact on future development of electrically-controlled spin logic devices via Rashba-like effects.

Strong Spin-Orbit Contribution to the Hall Coefficient of Two-Dimensional Hole Systems

Classical charge transport, such as longitudinal and Hall currents in weak magnetic fields, is usually not affected by quantum phenomena. Yet relativistic quantum mechanics is at the heart of the spin-orbit interaction, which has been at the forefront of efforts to realize spin-based electronics, new phases of matter, and topological quantum computing. In this work we demonstrate that quantum spin dynamics induced by the spin-orbit interaction is directly observable in classical charge transport. We determine the Hall coefficient R_{H} of two-dimensional hole systems at low magnetic fields and show that it has a sizable spin-orbit contribution, which depends on the density p, is independent of temperature, is a strong function of the top gate electric field, and can reach ∼20% of the total. We provide a general method for extracting the spin-orbit parameter from magnetotransport data, applicable even at higher temperatures where Shubnikov-de Haas oscillations and weak antilocalization are difficult to observe. Our work will enable experimentalists to measure spin-orbit parameters without requiring large magnetic fields, ultralow temperatures, or optical setups.

Observation of Exciton-Exciton Interaction Mediated Valley Depolarization in Monolayer MoSe2

The valley pseudospin in monolayer transition metal dichalcogenides (TMDs) has been proposed as a new way to manipulate information in various optoelectronic devices. This relies on a large valley polarization that remains stable over long time scales (hundreds of nanoseconds). However, time-resolved measurements report valley lifetimes of only a few picoseconds. This has been attributed to mechanisms such as phonon-mediated intervalley scattering and a precession of the valley pseudospin through electron-hole exchange. Here we use transient spin grating to directly measure the valley depolarization lifetime in monolayer MoSe₂. We find a fast valley decay rate that scales linearly with the excitation density at different temperatures. This establishes the presence of strong exciton-exciton Coulomb exchange interactions enhancing the valley depolarization. Our work highlights the microscopic processes inhibiting the efficient use of the exciton valley pseudospin in monolayer TMDs.

Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface

Spin-valves or spin-transistors in magnetic memories and logic elements are examples of structures whose functionality depends crucially on the length and time-scales at which spin-information is transferred through the device. In our work we employ spatially resolved optical pump-and-probe technique to investigate these fundamental spin-transport parameters in a model semiconductor system. We demonstrate that in an undoped GaAs/AlGaAs layer, spins are detected at distances reaching more than ten microns at times as short as nanoseconds. We have achieved this unprecedented combination of long-range and high-speed electronic spin-transport by simultaneously suppressing mechanisms that limit the spin life-time and the mobility of carriers. By exploring a series of structures we demonstrate that the GaAs/AlGaAs interface can provide superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex semiconductor heterostructures. We confirm our conclusions by complementing the optical experiments with dc and terahertz photo-conductivity measurements.

Modulating spin relaxation in nanowires with infrared light at room temperature

Spintronic devices usually rely on long spin relaxation times and/or long spin relaxation lengths for optimum performance. Therefore, the ability to modulate these quantities with an external agent offers unique possibilities. The dominant spin relaxation mechanism in most technologically important semiconductors is the D'yakonov-Perel' (DP) mechanism which may vanish if the spin carriers (electrons) are confined to a single conduction subband in a quantum wire. Here, we report modulating the DP spin relaxation rate (and hence the spin relaxation length) in self assembled 50 nm diameter InSb nanowires with infrared (IR) light at room temperature. In the dark, almost all the electrons in the nanowires are in the lowest conduction subband, resulting in near-complete absence of DP relaxation. This allows observation of spin-sensitive effects in the magnetoresistance. Under IR illumination, higher subbands get populated and the DP spin relaxation mechanism is revived, leading to a three-fold decrease in the spin relaxation length. Consequently, the spin sensitive effects disappear under illumination. This phenomenon may have applications in spintronic room-temperature IR photodetection.

Far-from-equilibrium spin transport in Heisenberg quantum magnets

We study experimentally the far-from-equilibrium dynamics in ferromagnetic Heisenberg quantum magnets realized with ultracold atoms in an optical lattice. After controlled imprinting of a spin spiral pattern with an adjustable wave vector, we measure the decay of the initial spin correlations through single-site resolved detection. On the experimentally accessible time scale of several exchange times, we find a profound dependence of the decay rate on the wave vector. In one-dimensional systems, we observe diffusionlike spin transport with a dimensionless diffusion coefficient of 0.22(1). We show how this behavior emerges from the microscopic properties of the closed quantum system. In contrast to the one-dimensional case, our transport measurements for two-dimensional Heisenberg systems indicate anomalous superdiffusion.

Spin–orbit coupling induced magnetoresistance oscillation in a dc biased two-dimensional electron system

We study dc-current effects on the magnetoresistance oscillation in a two-dimensional electron gas with Rashba spin-orbit coupling, using the balance-equation approach to nonlinear magnetotransport. In the weak current limit the magnetoresistance exhibits periodical Shubnikov-de Haas oscillation with changing Rashba coupling strength for a fixed magnetic field. At finite dc bias, the period of the oscillation halves when the interbranch contribution to resistivity dominates. With further increasing current density, the oscillatory resistivity exhibits phase inversion, i.e., magnetoresistivity minima (maxima) invert to maxima (minima) at certain values of the dc bias, which is due to the current-induced magnetoresistance oscillation.