Interface control of the magnetic chirality in CoFeB/MgO heterostructures with heavy-metal underlayers

Asymmetric Magnetization Switching and All-Electric Field-Free Programmable Spin Logic Enabled by the Interlayer Dzyaloshinskii-Moriya Interaction

The exceptional property of the interfacial Dzyaloshinskii-Moriya interaction (DMI) is an important way to develop topologically nontrivial spin textures in two-dimensional (2D) configurations. It is of great significance for the future development of fast and energy-efficient spintronic devices. Recent pioneering works have discovered the existence of interlayer DMI in multilayer films composed of two ferromagnets separated by a nonmagnetic spacer. This effect has created an exciting opportunity for the development and application of chiral effects in three-dimensional (3D) spin structures, which could become a critical component of future multilayer spintronic devices. Here, a unique asymmetric current-driven field-free magnetization switching is observed in an orthogonal magnetization system, CoFeB/Pt/CoFe/Pt. The reason for the asymmetry is attributed to the existence of interlayer DMI. Furthermore, this structure achieves an exceptional field-free switching ratio of nearly 90%. It has been verified through tilt angle measurements that the field-free switching in this system is primarily determined by the coexistence of an antisymmetric interaction, interlayer DMI, and canted magnetization. In addition, three all-electric programmable logic gates are successfully implemented by employing this asymmetric switching behavior. This research establishes a foundation for the development of logic gates and memory devices that operate fast, with low power consumption, and are all-electric controlled.

Magnetic texture enabled electrical control of Dzyaloshinskii-Moriya interaction in a Weyl semimetal

Purely electrical control of the Dzyaloshinskii-Moriya interaction (DMI) without any external magnetic field is explored in a magnetic Weyl semimetal (WSM). The underlying mechanism for the DMI in the WSM is the recently identified asymmetrical indirect spin-spin interaction compatible with the inversion symmetry of the structure. While the necessary imbalance in the fermion population of opposite chirality is normally achieved with non-orthogonal external electric and magnetic fields (i.e. the axial anomaly), it is found that the intrinsic axial magnetic field characteristic to an inhomogeneous magnetic texture can play the role of the magnetic field. When applied to the magnetic domain walls as specific examples, our theoretical analysis clearly illustrates that the resulting DMI is pinned by and can in turn significantly affect the wall textures. As the appearance and strength of the DMI can be solely controlled by the applied electric field, this mechanism enables electrical modulation of magnetic domains including their excitation in the WSMs. Numerical calculations highlight significant advantages of the WSM over the conventional magnetic materials in spintronic applications such as the racetrack memory.

Computational study of skyrmion stability and transport on W/CoFeB

Skyrmions are topologically protected magnetic structures originating from Dzyaloshinbskii-Moriya Interaction (DMI) which can be driven by a spin-polarized current making it a candidate for many different novel spintronic devices. However, the transport velocity is proportional to the size of the skyrmion rendering the effort of miniaturizing spintronics devices useless indicating that it is not possible to realise high-speed transport, small size and low operating current at the same time. One approach to solving the trilemma is to increase the spin Hall angle [Formula: see text], the conversion ratio between charge current and spin current, in the heavy metal layer. For example, beta-tungsten (β-W) has attracted attention due to its high spin Hall angle, abundance in nature and the potential to combine with other materials to form complex structures. To characterise the use of β-W as a heavy metal layer along with a CoFeB magnetic layer, the interfacial DMI and the external field required to generate skyrmions were estimated to be 1.5 [Formula: see text] and 0.1 T respectively, which were confirmed to be realistic. In that case, the about 10 nm diameter skyrmion was transported under SOT at a velocity of about 40 m/s, which has the potential for skyrmion-based unconventional computing devices like skyrmion race track memory and logic gate.

Decoding the magnetic bit positioning error in a ferrimagnetic racetrack

Current-driven motion of magnetic domain walls is one of the key technologies for developing storage class memory devices. Extensive studies have revealed a variety of material systems that exhibit high-speed and/or lower power propagation of the domain walls driven by electric current. However, few studies have assessed the reliability of the operations of the memory technology. Here, we decode the errors associated with writing and shifting domain walls using nanosecond current pulses in a ~5-micrometer-wide wire composed of a Pt/GdFeCo bilayer. We find that writing a domain wall at the edge of the wire causes a bit positioning error of ~0.3 micrometers, whereas the shifting process induces an error of ~0.1 micrometers per a 2-nanosecond-long current pulse. The error correlation among successive shifting is negligible when the current drive is sufficiently large. These features allow reliable operation of highly packed domain walls in a ferrimagnetic racetrack.

Sign Reversal of Spin-Transfer Torques

Spin-transfer torque (STT) and spin-orbit torque (SOT) form the core of spintronics, allowing for the control of magnetization through electric currents. While the sign of SOT can be manipulated through material and structural engineering, it is conventionally understood that STT lacks a degree of freedom in its sign. However, this study presents the first demonstration of manipulating the STT sign by engineering heavy metals adjacent to magnetic materials in magnetic heterostructures. Spin torques are quantified through magnetic domain-wall speed measurements, and subsequently, both STT and SOT are systematically extracted from these measurements. The results unequivocally show that the sign of STT can be either positive or negative, depending on the materials adjacent to the magnetic layers. Specifically, Pd/Co/Pd films exhibit positive STT, while Pt/Co/Pt films manifest negative STT. First-principle calculations further confirm that the sign reversal of STT originates from the sign reversal of spin polarization of conduction electrons.

Asymmetric magnetization switching and programmable complete Boolean logic enabled by long-range intralayer Dzyaloshinskii-Moriya interaction

After decades of efforts, some fundamental physics for electrical switching of magnetization is still missing. Here, we report the discovery of the long-range intralayer Dzyaloshinskii-Moriya interaction (DMI) effect, which is the chiral coupling of orthogonal magnetic domains within the same magnetic layer via the mediation of an adjacent heavy metal layer. The effective magnetic field of the long-range intralayer DMI on the perpendicular magnetization is out-of-plane and varies with the interfacial DMI constant, the applied in-plane magnetic fields, and the magnetic anisotropy distribution. Striking consequences of the effect include asymmetric current/field switching of perpendicular magnetization, hysteresis loop shift of perpendicular magnetization in the absence of in-plane direct current, and sharp in-plane magnetic field switching of perpendicular magnetization. Utilizing the intralayer DMI, we demonstrate programable, complete Boolean logic operations within a single spin-orbit torque device. These results will stimulate investigation of the long-range intralayer DMI effect in a variety of spintronic devices.

Regulation of interfacial Dzyaloshinskii-Moriya interaction in ferromagnetic multilayers

Interfacial Dzyaloshinskii-Moriya interaction (i-DMI) exists in the film materials with inversion symmetry breaking, which can stabilize a series of nonlinear spin structures and control their chirality, such as Néel-type domain wall, magnetic skyrmion and spin spiral. In addition, the strength and chirality of i-DMI are directly related to the dynamic behavior of these nonlinear spin structures. Therefore, regulating the strength and chirality of i-DMI not only has an important scientific significance for enriching spintronics and topological physics, but also has a significant practical value for constructing a new generation of memorizer, logic gate, and brain-like devices with low-power. This review summarizes the research progress on the regulation of i-DMI in ferromagnetic films and provides some prospects for future research.

Tailoring Interlayer Chiral Exchange by Azimuthal Symmetry Engineering

Recent theoretical and experimental studies of the interlayer Dzyaloshinskii-Moriya interaction (DMI) have sparked great interest in its implementation into practical magnetic random-access memory (MRAM) devices, due to its capability to mediate long-range chiral spin textures. So far, experimental reports focused on the observation of interlayer DMI, leaving the development of strategies to control interlayer DMI's magnitude unaddressed. Here, we introduce an azimuthal symmetry engineering protocol capable of additive/subtractive tuning of interlayer DMI through the control of wedge deposition of separate layers and demonstrate its capability to mediate field-free spin-orbit torque (SOT) magnetization switching in both orthogonally magnetized and synthetic antiferromagnetically coupled systems. Furthermore, we showcase that the spatial inhomogeneity brought about by wedge deposition can be suppressed by specific azimuthal engineering design, ideal for practical implementation. Our findings provide guidelines for effective manipulations of interlayer DMI strength, beneficial for the future design of SOT-MRAM or other spintronic devices utilizing interlayer DMI.

Position error-free control of magnetic domain-wall devices via spin-orbit torque modulation

Magnetic domain-wall devices such as racetrack memory and domain-wall shift registers facilitate massive data storage as hard disk drives with low power portability as flash memory devices. The key issue to be addressed is how perfectly the domain-wall motion can be controlled without deformation, as it can replace the mechanical motion of hard disk drives. However, such domain-wall motion in real media is subject to the stochasticity of thermal agitation with quenched disorders, resulting in severe deformations with pinning and tilting. To sort out the problem, we propose and demonstrate a new concept of domain-wall control with a position error-free scheme. The primary idea involves spatial modulation of the spin-orbit torque along nanotrack devices, where the boundary of modulation possesses broken inversion symmetry. In this work, by showing the unidirectional motion of domain wall with position-error free manner, we provide an important missing piece in magnetic domain-wall device development.

Switching of Perpendicular Magnetization by Spin-Orbit Torque

Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical switching of such perpendicular magnetization in an energy-efficient, deterministic, scalable manner has remained a big challenge. This problem has recently attracted enormous efforts in the field of spintronics. Here, recent advances and challenges in the understanding of the electrical generation of spin currents, the switching mechanisms and the switching strategies of perpendicular magnetization, the switching current density by spin-orbit torque of transverse spins, the choice of perpendicular magnetic materials are reviewed, and the progress in prototype perpendicular SOT memory and logic devices toward the goal of energy-efficient, dense, fast perpendicular spin-orbit torque applications is summarized.

Chiral Interlayer Exchange Coupling for Asymmetric Domain Wall Propagation in Field-Free Magnetization Switching

The discovery of chiral spin texture has unveiled many unusual yet extraordinary physical phenomena, such as the Néel type domain walls and magnetic skyrmions. A recent theoretical study suggests that a chiral exchange interaction is not limited to a single ferromagnetic layer; instead, three-dimensional spin textures can arise from an interlayer Dzyaloshinskii-Moriya interaction. However, the influence of chiral interlayer exchange coupling on the electrical manipulation of magnetization has rarely been addressed. Here, the coexistence of both symmetric and chiral interlayer exchange coupling between two orthogonally magnetized CoFeB layers in PtMn/CoFeB/W/CoFeB/MgO is demonstrated. Images from polar magneto-optical Kerr effect microscopy indicate that the two types of coupling act concurrently to induce asymmetric domain wall propagation, where the velocities of domain walls with opposite chiralities are substantially different. Based on this microscopic mechanism, field-free switching of the perpendicularly magnetized CoFeB is achieved with a wide range of W thicknesses of 0.6-4.5 nm. This work enriches the understanding of interlayer exchange coupling for spintronic applications.

Non-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas

Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs using gate voltages could offer a degree of freedom lacking in the classical ferromagnetic/spin Hall effect bilayers for spin-orbitronics, in which the sign and amplitude of SOTs at a given current are fixed by the stack structure. Here, we report the non-volatile electric-field control of SOTs in an oxide-based Rashba-Edelstein 2DEG. We demonstrate that the 2DEG is controlled using a back-gate electric-field, providing two remanent and switchable states, with a large resistance contrast of 1064%. The SOTs can then be controlled electrically in a non-volatile way, both in amplitude and in sign. This achievement in a 2DEG-CoFeB/MgO heterostructures with large perpendicular magnetization further validates the compatibility of oxide 2DEGs for magnetic tunnel junction integration, paving the way to the advent of electrically reconfigurable SOT MRAMS circuits, SOT oscillators, skyrmion and domain-wall-based devices, and magnonic circuits.

Position-reconfigurable pinning for magnetic domain wall motion

Precise control of magnetic domain wall (DW) motion is crucial for DW-based spintronic devices. To date, artificially designed DW pinning sites, such as notch structures, have been used to precisely control the DW position. However, the existing DW pinning methods are not reconfigurable because they cannot change the position of pinning site after being fabricated. Herein, a novel method for attaining reconfigurable DW pinning is proposed, which relies on the dipolar interactions between two DWs located in different magnetic layers. Repulsion between DWs in both layers was observed, indicating that one of the DWs acts as a pinning barrier for the other. Because the DW is mobile in the wire, the position of pinning can be modulated, thereby resulting in reconfigurable pinning that was experimentally demonstrated for current-driven DW motion. These findings provide additional controllability of DW motion, which may expand the functionality of DW-based devices to broader spintronic applications.

Strong variation of spin-orbit torques with relative spin relaxation rates in ferrimagnets

Spin-orbit torques (SOTs) have been widely understood as an interfacial transfer of spin that is independent of the bulk properties of the magnetic layer. Here, we report that SOTs acting on ferrimagnetic FexTb1-x layers decrease and vanish upon approaching the magnetic compensation point because the rate of spin transfer to the magnetization becomes much slower than the rate of spin relaxation into the crystal lattice due to spin-orbit scattering. These results indicate that the relative rates of competing spin relaxation processes within magnetic layers play a critical role in determining the strength of SOTs, which provides a unified understanding for the diverse and even seemingly puzzling SOT phenomena in ferromagnetic and compensated systems. Our work indicates that spin-orbit scattering within the magnet should be minimized for efficient SOT devices. We also find that the interfacial spin-mixing conductance of interfaces of ferrimagnetic alloys (such as FexTb1-x) is as large as that of 3d ferromagnets and insensitive to the degree of magnetic compensation.

Engineering Pt/Co/AlOxheterostructures to enhance the Dzyaloshinskii-Moriya interaction

The study of interfacial Dzyaloshinskii-Moriya interaction (DMI) in perpendicularly magnetized structurally asymmetric heavy metal/ferromagnet multilayer systems is of high importance due to the formation of chiral magnetic textures in the presence of DMI. Here, we report the impact of cobalt oxidation at the Co/AlO_xinterface in Pt/Co/AlO_xtrilayer structures on the DMI by varying the post-growth annealing time, Al thickness and substrate. To quantify DMI we employed magneto-optical imaging of the asymmetric domain wall expansion, hysteresis loop shift, and spin-wave spectroscopy techniques. We further correlated the Co oxidation with low-temperature Hall effect measurements and x-ray photoelectron spectroscopy. Our results emphasize the importance of full characterization of the magnetic films that could be used for magnetic random access memory technologies when subjected to the semiconductor temperature processing conditions, as the magnetic interactions are critical for device performance and can be highly sensitive to oxidation and other effects.

Intrinsic chiral field as vector potential of the magnetic current in the zig-zag lattice of magnetic dipoles

Chiral magnetic insulators manifest novel phases of matter where the sense of rotation of the magnetization is associated with exotic transport phenomena. Effective control of such phases and their dynamical evolution points to the search and study of chiral fields like the Dzyaloshinskii-Moriya interaction. Here we combine experiments, numerics, and theory to study a zig-zag dipolar lattice as a model of an interface between magnetic in-plane layers with a perpendicular magnetization. The zig-zag lattice comprises two parallel sublattices of dipoles with perpendicular easy plane of rotation. The dipolar energy of the system is exactly separable into a sum of symmetric and antisymmetric long-range exchange interactions between dipoles, where the antisymmetric coupling generates a nonlocal Dzyaloshinskii-Moriya field which stabilizes winding textures with the form of chiral solitons. The Dzyaloshinskii-Moriya interaction acts as a vector potential or gauge field of the magnetic current and gives rise to emergent magnetic and electric fields that allow the manifestation of the magnetoelectric effect in the system.

MgO Heterostructures: From Synthesis to Applications

The energy storage capacity of batteries and supercapacitors has seen rising demand and problems as large-scale energy storage systems and electric gadgets have become more widely adopted. With the development of nano-scale materials, the electrodes of these devices have changed dramatically. Heterostructure materials have gained increased interest as next-generation materials due to their unique interfaces, resilient structures and synergistic effects, providing the capacity to improve energy/power outputs and battery longevity. This review focuses on the role of MgO in heterostructured magnetic and energy storage devices and their applications and synthetic strategies. The role of metal oxides in manufacturing heterostructures has received much attention, especially MgO. Heterostructures have stronger interactions between tightly packed interfaces and perform better than single structures. Due to their typical physical and chemical properties, MgO heterostructures have made a breakthrough in energy storage. In perpendicularly magnetized heterostructures, the MgO's thickness significantly affects the magnetic properties, which is good news for the next generation of high-speed magnetic storage devices.

Inducing Dzyaloshinskii-Moriya interaction in symmetrical multilayers using post annealing

The interfacial Dzyaloshinskii-Moriya Interaction (iDMI) is an antisymmetric exchange interaction that is induced by the broken inversion symmetry at the interface of, e.g., a ferromagnet/heavy metal. Thus, the presence of iDMI is not expected in symmetrical multilayer stacks of such structures. Here, we use thermal annealing to induce the iDMI in a [Py/Pt]×10 symmetrical multilayer stack. Brillouin light scattering spectroscopy is used to directly evidence the iDMI induction in the annealed sample. Structural characterizations highlight the modified crystallinity as well as a higher surface roughness of the sample after annealing. First principles electronic structure calculations demonstrate a monotonic increase of the iDMI with the interfacial disorder due to the interdiffusion of atoms, depicting the possible origin of the induced iDMI. The presented method can be used to tune the iDMI strength in symmetric multilayers, which are the integral part of racetrack memories, magnonic devices as well as spin-orbitronic elements.

Magnonic Metamaterials for Spin-Wave Control with Inhomogeneous Dzyaloshinskii-Moriya Interactions

A magnonic metamaterial in the presence of spatially modulated Dzyaloshinskii-Moriya interaction is theoretically proposed and demonstrated by micromagnetic simulations. By analogy to the fields of photonics, we first establish magnonic Snell's law for spin waves passing through an interface between two media with different dispersion relations due to different Dzyaloshinskii-Moriya interactions. Based on magnonic Snell's law, we find that spin waves can experience total internal reflection. The critical angle of total internal reflection is strongly dependent on the sign and strength of Dzyaloshinskii-Moriya interaction. Furthermore, spin-wave beam fiber and spin-wave lens are designed by utilizing the artificial magnonic metamaterials with inhomogeneous Dzyaloshinskii-Moriya interactions. Our findings open up a rich field of spin waves manipulation for prospective applications in magnonics.

Enhanced Spin-Orbit Torque and Low Critical Current Density in Pt100-xRux/[CoNi]/Ru Multilayer for Spintronic Devices

Using a heavy-metal (HM) alloy layer in spin-orbit torque (SOT)-based devices is an effective method for obtaining a high current-spin conversion efficiency θ_SH. In this work, SOT-based spintronic devices with a Pt_100-xRu_x-alloyed HM layer are studied by applying harmonic Hall measurements and magneto-optical Kerr effect microscopy to detect the θ_SH and to observe the process of current-induced magnetization switching. Both the highest θ_SH of 0.132 and the lowest critical current density (J_c) of 8 × 10⁵ A/cm² are realized in a device with x = 20, which satisfies the high SOT efficiency and low energy consumption simultaneously. The interfacial Dzyaloshinskii-Moriya interaction can be overcome by increasing the in-plane assist field. Meanwhile, the minimum in-plane field required for current-induced complete switching can be reduced to ±60 Oe. Our study reveals that using the Pt-Ru alloyed HM layer is an effective route for SOT application with enhanced performance.

Applications of nanomagnets as dynamical systems: II

In Part I of this topical review, we discussed dynamical phenomena in nanomagnets, focusing primarily on magnetization reversal with an eye to digital applications. In this part, we address mostly wave-like phenomena in nanomagnets, with emphasis on spin waves in myriad nanomagnetic systems and methods of controlling magnetization dynamics in nanomagnet arrays which may have analog applications. We conclude with a discussion of some interesting spintronic phenomena that undergird the rich physics exhibited by nanomagnet assemblies.

Chiral Coupling between Magnetic Layers with Orthogonal Magnetization

We report on the occurrence of strong interlayer Dzyaloshinskii-Moriya interaction (DMI) between an in-plane magnetized Co layer and a perpendicularly magnetized TbFe layer through a Pt spacer. The DMI causes a chiral coupling that favors one-handed orthogonal magnetic configurations of Co and TbFe, which we reveal through Hall effect and magnetoresistance measurements. The DMI coupling mediated by Pt causes effective magnetic fields on either layer of up to 10-15 mT, which decrease monotonically with increasing Pt thickness. Ru, Ta, and Ti spacers mediate a significantly smaller coupling compared to Pt, highlighting the essential role of Pt in inducing the interlayer DMI. These results are relevant to understand and maximize the interlayer coupling induced by the DMI as well as to design spintronic devices with chiral spin textures.

Transcription and logic operations of magnetic skyrmions in bilayer cross structures

Magnetic skyrmions are potential building blocks for future information storage and computing devices. Here, we computationally study the skyrmion dynamics in a cross structure made of two ferromagnetic nanotracks. We show that by controlling the skyrmion motion in the cross structure using spin currents, it is possible to realize the transcription of skyrmion at the intersection of the cross structure at certain conditions. Based on the transcription of skyrmion, we computationally demonstrate the AND, OR and NOT logical gates using the cross structures with modified geometries and appropriate magnetic parameters. Our results may provide guidelines to design future three-dimensional spintronics devices based on magnetic skyrmions.

Energy-efficient ultrafast nucleation of single and multiple antiferromagnetic skyrmions using in-plane spin polarized current

We numerically investigate the ultrafast nucleation of antiferromagnetic (AFM) skyrmion using in-plane spin-polarized current and present its key advantages over out-of-plane spin-polarized current. We show that the threshold current density required for the creation of AFM skyrmion is almost an order of magnitude lower for the in-plane spin-polarized current. The nucleation time for the AFM skyrmion is found to be [Formula: see text] ps for the corresponding current density of 1-[Formula: see text]. We also demonstrate ultrafast nucleation of multiple AFM skyrmions that is possible only with in-plane spin polarized current and discuss how the current pulse width can be used to control the number of AFM skyrmions. The results show more than one order of magnitude improvement in energy consumption for ultrafast nucleation of AFM skyrmions using in-plane spin-polarized current, which is promising for applications such as logic gates, racetrack memory, and neuromorphic computing.

Structural Phase-Dependent Giant Interfacial Spin Transparency in W/CoFeB Thin-Film Heterostructures

Pure spin current has transformed the research field of conventional spintronics due to its various advantages, including energy efficiency. An efficient mechanism for generation of pure spin current is spin pumping, and high effective spin-mixing conductance (G_eff) and interfacial spin transparency (T) are essential for its higher efficiency. By employing the time-resolved magneto-optical Kerr effect technique, we report here a giant value of T in substrate/W (t)/Co₂₀Fe₆₀B₂₀ (d)/SiO₂ (2 nm) thin-film heterostructures in the beta-tungsten (β-W) phase. We extract the spin diffusion length of W and spin-mixing conductance of the W/CoFeB interface from the variation of damping as a function of W and CoFeB thickness. This leads to a value of T = 0.81 ± 0.03 for the β-W/CoFeB interface. A stark variation of G_eff and T with the thickness of the W layer is obtained in accordance with the structural phase transition and resistivity variation of W with its thickness. Effects such as spin memory loss and two-magnon scattering are found to have minor contributions to damping modulation in comparison to the spin pumping effect which is reconfirmed from the unchanged damping constant with the variation of Cu spacer layer thickness inserted between W and CoFeB. The giant interfacial spin transparency and its strong dependence on crystal structures of W will be important for future spin-orbitronic devices based on pure spin current.

Spin-Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing

Spin-torque memristors are proposed in 2009, and can provide fast, low-power, and infinite memristive behavior for neuromorphic computing and large-density non-volatile memory. However, the strict requirements of combining high magnetoresistance, stable domain wall pinning and current-induced switching in a single device pose difficulties in physical implementation. Here, a nanoscale spin-torque memristor based on a perpendicular-anisotropy magnetic tunnel junction with a CoFeB/W/CoFeB composite free layer structure is experimentally demonstrated. Its tunneling magnetoresistance is higher than 200%, and memristive behavior can be realized by spin-transfer torque switching. Memristive states are retained by strong domain wall pinning effects in the free layer. Experiments and simulations suggest that nanoscale vertical chiral spin textures can form around clusters of W atoms under the combined effect of opposite Dzyaloshinskii-Moriya interactions and the Ruderman-Kittel-Kasuya-Yosida interaction between the two CoFeB free layers. Energy fluctuation caused by these textures may be the main reason for the strong pinning effect. With the experimentally demonstrated memristive behavior and spike-timing-dependent plasticity, a spiking neural network to perform handwritten pattern recognition in an unsupervised manner is simulated. Due to advantages such as long endurance and high speed, the spin-torque memristors are competitive in the future applications for neuromorphic computing.

Discrimination of skyrmion chirality via spin-orbit and -transfer torques for logic operation

Recently many works on magnetic memories and logic circuits, which use a magnetic skyrmion have been reported. Previously we micromagnetically simulated a method to switch a chirality of a magnetic skyrmion formed in a magnetic thin film by introducing a pulsed heat spot. In this paper, we propose a method to discriminate the chirality of a skyrmion in a branched nanowire by using spin–orbit torque (SOT) and spin-transfer torque (STT), and confirm the validity of the method by using simulation. The simulated results show that the motion changes depending on the chirality when additional SOT is applied on a skyrmion moving in a branch by STT. This method can be used as a fundamental building block for electrical detection in memory and logic devices using the chirality of skyrmions as a data bit in addition to the presence (and polarity) of the skyrmions as conventionally used, which can be lead to multiple-valued operation.

Increased Efficiency of Current-Induced Motion of Chiral Domain Walls by Interface Engineering

Magnetic racetrack devices are promising candidates for next-generation memories. These spintronic shift-register devices are formed from perpendicularly magnetized ferromagnet/heavy metal thin-film systems. Data are encoded in domain wall magnetic bits that have a chiral Néel structure that is stabilized by an interfacial Dzyaloshinskii-Moriya interaction. The bits are manipulated by spin currents generated from electrical currents that are passed through the heavy metal layers. Increased efficiency of the current-induced domain wall motion is a prerequisite for commercially viable racetrack devices. Here, significantly increased efficiency with substantially lower threshold current densities and enhanced domain wall velocities is demonstrated by the introduction of atomically thin 4d and 5d metal "dusting" layers at the interface between the lower magnetic layer of the racetrack (here cobalt) and platinum. The greatest efficiency is found for dusting layers of palladium and rhodium, just one monolayer thick, for which the domain wall's velocity is increased by up to a factor of 3.5. Remarkably, when the heavy metal layer is formed from the dusting layer material alone, the efficiency is rather reduced by an order of magnitude. The results point to the critical role of interface engineering for the development of efficient racetrack memory devices.

Electric-field control of skyrmions in multiferroic heterostructure via magnetoelectric coupling

Room-temperature skyrmions in magnetic multilayers are considered to be promising candidates for the next-generation spintronic devices. Several approaches have been developed to control skyrmions, but they either cause significant heat dissipation or require ultrahigh electric fields near the breakdown threshold. Here, we demonstrate electric-field control of skyrmions through strain-mediated magnetoelectric coupling in ferromagnetic/ferroelectric multiferroic heterostructures. We show the process of non-volatile creation of multiple skyrmions, reversible deformation and annihilation of a single skyrmion by performing magnetic force microscopy with in situ electric fields. Strain-induced changes in perpendicular magnetic anisotropy and interfacial Dzyaloshinskii–Moriya interaction strength are characterized experimentally. These experimental results, together with micromagnetic simulations, demonstrate that strain-mediated magnetoelectric coupling (via strain-induced changes in both the perpendicular magnetic anisotropy and interfacial Dzyaloshinskii–Moriya interaction is responsible for the observed electric-field control of skyrmions. Our work provides a platform to investigate electric-field control of skyrmions in multiferroic heterostructures and paves the way towards more energy-efficient skyrmion-based spintronics.

The common approaches to control of skymions cause significant heat dissipation or require high electric fields near the breakdown threshold. Here, the authors demonstrate electric-field control of skyrmions through strain-mediated magnetoelectric coupling in multiferroic heterostructures.

Acoustic spin Hall effect in strong spin-orbit metals

We report on the observation of the acoustic spin Hall effect that facilitates lattice motion-induced spin current via spin-orbit interaction (SOI). Under excitation of surface acoustic wave (SAW), we find that a spin current flows orthogonal to the SAW propagation in nonmagnetic metals (NMs). The acoustic spin Hall effect manifests itself in a field-dependent acoustic voltage in NM/ferromagnetic metal bilayers. The acoustic voltage takes a maximum when the NM layer thickness is close to its spin diffusion length, vanishes for NM layers with weak SOI, and increases linearly with the SAW frequency. To account for these results, we find that the spin current must scale with the SOI and the time derivative of the lattice displacement. These results, which imply the strong coupling of electron spins with rotating lattices via the SOI, show the potential of lattice dynamics to supply spin current in strong spin-orbit metals.

Large Dzyaloshinskii-Moriya interaction induced by chemisorbed oxygen on a ferromagnet surface

The Dzyaloshinskii-Moriya interaction (DMI) is an antisymmetric exchange interaction that stabilizes chiral spin textures. It is induced by inversion symmetry breaking in noncentrosymmetric lattices or at interfaces. Recently, interfacial DMI has been found in magnetic layers adjacent to transition metals due to the spin-orbit coupling and at interfaces with graphene due to the Rashba effect. We report direct observation of strong DMI induced by chemisorption of oxygen on a ferromagnetic layer at room temperature. The sign of this DMI and its unexpectedly large magnitude-despite the low atomic number of oxygen-are derived by examining the oxygen coverage-dependent evolution of magnetic chirality. We find that DMI at the oxygen/ferromagnet interface is comparable to those at ferromagnet/transition metal interfaces; it has enabled direct tailoring of skyrmion's winding number at room temperature via oxygen chemisorption. This result extends the understanding of the DMI, opening up opportunities for the chemisorption-related design of spin-orbitronic devices.

Magnetic Domain Wall Based Synaptic and Activation Function Generator for Neuromorphic Accelerators

Magnetic domain walls are information tokens in both logic and memory devices and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical manipulation of magnetic domain walls are capable of implementing linear, as well as programmable nonlinear, functions. Unlike other approaches, domain-wall-based devices are ideal for application to both synaptic weight generators and thresholding in deep neural networks. Prototype micrometer-size devices operate with 8 ns current pulses and the energy consumption required for weight modulation is ≤16 pJ. Both speed and energy consumption compare favorably to other synaptic nonvolatile devices, with the expected energy dissipation for scaled 20 nm devices close to that of biological neurons.

Switching of Skyrmion chirality by local heating

Magnetic Skyrmions are energetically stable entities formed in a ferromagnet with a diameter of typically below 100 nm and are easily displaceable using an electrical current of 10² A/cm², resulting the Skyrmions to be more advantageous than domain walls for spintronic memory applications. Here, we demonstrated switching of a chirality of magnetic Skyrmions formed in magnetic thin films by introducing a pulsed heat spot using micromagnetic simulation. Skyrmions are found to expand with a pulsed heat spot, which induces the magnetic moments surrounding the Skyrmion to rotate by this expansion, followed by the chirality switching of the Skyrmion. Such simple controllability can be used as a fundamental building block for memory and logic devices using the chirality of Skyrmions as a data bit.

Effect of inter-layer spin diffusion on skyrmion motion in magnetic multilayers

It is well known that skyrmions can be driven using spin-orbit torques due to the spin-Hall effect. Here we show an additional contribution in multilayered stacks arises from vertical spin currents due to inter-layer diffusion of a spin accumulation generated at a skyrmion. This additional interfacial spin torque is similar in form to the in-plane spin transfer torque, but is significantly enhanced in ultra-thin films and acts in the opposite direction to the electron flow. The combination of this diffusive spin torque and the spin-orbit torque results in skyrmion motion which helps to explain the observation of small skyrmion Hall angles even with moderate magnetisation damping values. Further, the effect of material imperfections on threshold currents and skyrmion Hall angle is also investigated. Topographical surface roughness, as small as a single monolayer variation, is shown to be an important contributing factor in ultra-thin films, resulting in good agreement with experimental observations.

Current-Induced Modulation of the Interfacial Dzyaloshinskii-Moriya Interaction

The Dzyaloshinskii-Moriya (DM) interaction is an antisymmetric exchange interaction that is responsible for the emergence of chiral magnetism. The origin of the DM interaction, however, remains to be identified albeit the large number of studies reported on related effects. It has been recently suggested that the DM interaction is equivalent to an equilibrium spin current density originating from spin-orbit coupling, an effect referred to as the spin Doppler effect. The model predicts that the DM interaction can be controlled by spin current injected externally. Here we show that the DM exchange constant (D) in W/CoFeB-based heterostructures can be modulated with external current passed along the film plane. At higher current, D decreases with increasing current, which we infer is partly due to the adiabatic spin transfer torque. At lower current, D increases linearly with current regardless of the polarity of current flow. The rate of increase in D with the current density agrees with that predicted by the model based on the spin Doppler effect. These results imply that the DM interaction at the heavy-metal-ferromagnetic-metal interface partly originates from an equilibrium interface spin (polarized) current which can be modulated externally.

Tuning spin-orbit torques at magnetic domain walls in epitaxial Pt/Co/Pt1-x Au x trilayers

Magnetic domain walls (DWs) in perpendicularly magnetised thin films are attractive for racetrack memories, but technological progress still requires further reduction of the operationing currents. To efficiently drive these objects by the means of electric current, one has to optimize the damping-like torque which is caused by the spin Hall effect (SHE). This not only requires a high net spin Hall angle but also the presence of a Dzyaloshinskii-Moriya interaction (DMI) to produce magnetic textures sensitive to this type of the torque. In this work, we explore the coexistence and importance of these two phenomena in epitaxial Pt/Co/Pt_1-x Au _x films in which we control the degree of inversion symmetry-breaking between the two interfaces by varying x. Gold is used as a material with negligible induced magnetic moment and SHE and the interface between Co/Au as a source of a small DMI. We find no current-induced DW motion in the symmetric Pt/Co/Pt (x = 0) trilayer. By fitting a one-dimensional model to the DW velocity as a function of drive current density and in-plane applied field in samples with non-zero values of x, we find that both net DMI strength and spin Hall angle rise monotonically as Au is introduced. They reach values of 0.75 ± 0.05 mJ m^-2 and 0.10 ± 0.01, respectively, for Pt/Co/Au (x = 1).

Interface-driven chiral magnetism and current-driven domain walls in insulating magnetic garnets

Magnetic oxides exhibit rich fundamental physics^1-4 and technologically desirable properties for spin-based memory, logic and signal transmission^5-7. Recently, spin-orbit-induced spin transport phenomena have been realized in insulating magnetic oxides by using proximate heavy metal layers such as platinum^8-10. In their metallic ferromagnet counterparts, such interfaces also give rise to a Dzyaloshinskii-Moriya interaction^11-13 that can stabilize homochiral domain walls and skyrmions with efficient current-driven dynamics. However, chiral magnetism in centrosymmetric oxides has not yet been observed. Here we discover chiral magnetism that allows for pure spin-current-driven domain wall motion in the most ubiquitous class of magnetic oxides, ferrimagnetic iron garnets. We show that epitaxial rare-earth iron garnet films with perpendicular magnetic anisotropy exhibit homochiral Néel domain walls that can be propelled faster than 800 m s^-1 by spin current from an adjacent platinum layer. We find that, despite the relatively small interfacial Dzyaloshinskii-Moriya interaction, very high velocities can be attained due to the antiferromagnetic spin dynamics associated with ferrimagnetic order.

Anatomy of Skyrmionic Textures in Magnetic Multilayers

Room temperature magnetic skyrmions in magnetic multilayers are considered as information carriers for future spintronic applications. Currently, a detailed understanding of the skyrmion stabilization mechanisms is still lacking in these systems. To gain more insight, it is first and foremost essential to determine the full real-space spin configuration. Here, two advanced X-ray techniques are applied, based on magnetic circular dichroism, to investigate the spin textures of skyrmions in [Ta/CoFeB/MgO]_n multilayers. First, by using ptychography, a high-resolution diffraction imaging technique, the 2D out-of-plane spin profile of skyrmions with a spatial resolution of 10 nm is determined. Second, by performing circular dichroism in resonant elastic X-ray scattering, it is demonstrated that the chirality of the magnetic structure undergoes a depth-dependent evolution. This suggests that the skyrmion structure is a complex 3D structure rather than an identical planar texture throughout the layer stack. The analyses of the spin textures confirm the theoretical predictions that the dipole-dipole interactions together with the external magnetic field play an important role in stabilizing sub-100 nm diameter skyrmions and the hybrid structure of the skyrmion domain wall. This combined X-ray-based approach opens the door for in-depth studies of magnetic skyrmion systems, which allows for precise engineering of optimized skyrmion heterostructures.

Spin-Orbit Torques in Heavy-Metal-Ferromagnet Bilayers with Varying Strengths of Interfacial Spin-Orbit Coupling

Despite intense efforts it has remained unresolved whether and how interfacial spin-orbit coupling (ISOC) affects spin transport across heavy-metal (HM)-ferromagnet (FM) interfaces. Here we report conclusive experiment evidence that the ISOC at HM/FM interfaces is the dominant mechanism for "spin memory loss". An increase in ISOC significantly reduces, in a linear manner, the dampinglike spin-orbit torque (SOT) exerted on the FM layer via degradation of the spin transparency of the interface for spin currents generated in the HM. In addition, the fieldlike SOT is also dominated by the spin Hall contribution of the HM and decreases with increasing ISOC. This work reveals that ISOC at HM/FM interfaces should be minimized to advance efficient SOT devices through atomic layer passivation of the HM/FM interface or other means.

Electric-field control of spin accumulation direction for spin-orbit torques

Electric field is an energy-efficient tool that can be leveraged to control spin-orbit torques (SOTs). Although the amount of current-induced spin accumulation in a heavy metal (HM)/ferromagnet (FM) heterostructure can be regulated to a certain degree using an electric field in various materials, the control of its direction has remained elusive so far. Here, we report that both the direction and amount of current-induced spin accumulation at the HM/FM interface can be dynamically controlled using an electric field in an oxide capped SOT device. The applied electric field transports oxygen ions and modulates the HM/FM interfacial chemistry resulting in an interplay between the spin Hall and the interfacial torques which in turn facilitates a non-volatile and reversible control over the direction and magnitude of SOTs. Our electric-field controlled spin-orbitronics device can be programmed to behave either like the SOT systems with a positive spin Hall angle or a negative spin Hall angle.

Domain-wall motion and interfacial Dzyaloshinskii-Moriya interactions in Pt/Co/Ir(t Ir)/Ta multilayers

The interfacial Dzyaloshinskii-Moriya interaction (DMI) is important for chiral domain walls (DWs) and for stabilizing magnetic skyrmions. We study the effects of introducing increasing thicknesses of Ir, from zero to 2 nm, into a Pt/Co/Ta multilayer between the Co and Ta layers. There is a marked increase in magnetic moment, due to the suppression of the dead layer at the interface with Ta, but the perpendicular anisotropy is hardly affected. All samples show a universal scaling of the field-driven DW velocity across the creep and depinning regimes. Asymmetric bubble expansion shows that DWs in all of the samples have the left-handed Néel form. The value of in-plane magnetic field at which the creep velocity shows a minimum drops markedly on the introduction of Ir, as does the frequency shift of the Stokes and anti-Stokes peaks in Brillouin light scattering (BLS) measurements. Despite this qualitative similarity, there are quantitative differences in the DMI strength given by the two measurements, with BLS often returning higher values. Many features in bubble expansion velocity curves do not fit simple models commonly used, namely a lack of symmetry about the velocity minimum and no difference in velocities at high in-plane fields. These features are explained by the use of a new model in which the depinning field is allowed to vary with in-plane field in a way determined from micromagnetic simulations. This theory shows that the velocity minimum underestimates the DMI field, consistent with BLS giving higher values. Our results suggest that the DMI at an Ir/Co interface has the same sign as the DMI at a Pt/Co interface.

Composite topological structure of domain walls in synthetic antiferromagnets

We experimentally study the structure and dynamics of magnetic domains in synthetic antiferromagnets based on Co/Ru/Co films. Dramatic effects arise from the interaction among the topological defects comprising the dual domain walls in these structures. Under applied magnetic fields, the dual domain walls propagate following the dynamics of bi-meronic (bi-vortex/bi-antivortex) topological defects built in the walls. Application of an external field triggers a rich dynamical response: The propagation depends on mutual orientation and chirality of bi-vortices and bi-antivortices in the domain walls. For certain configurations, we observe sudden jumps of composite domain walls in increasing field, which are associated with the decay of composite skyrmions. These features allow for the enhanced control of domain-wall motion in synthetic antiferromagnets with the potential of employing them as information carriers in future logic and storage devices.

Modification of Dzyaloshinskii-Moriya-Interaction-Stabilized Domain Wall Chirality by Driving Currents

We measure and analyze the chirality of Dzyaloshinskii-Moriya-interaction (DMI) stabilized spin textures in multilayers of Ta|Co_{20}F_{60}B_{20}|MgO. The effective DMI is measured experimentally using domain wall motion measurements, both in the presence (using spin-orbit torques) and absence of driving currents (using magnetic fields). We observe that the current-induced domain wall motion yields a change in effective DMI magnitude and opposite domain wall chirality when compared to field-induced domain wall motion (without current). We explore this effect, which we refer to as current-induced DMI, by providing possible explanations for its emergence, and explore the possibility of its manifestation in the framework of recent theoretical predictions of DMI modifications due to spin currents.

Interference Induced Enhancement of Magneto-Optical Effect in Pt/TbCo Hetero-Structured Films

Magnetic films with a heavy metal layer show strong interfacial interaction of spin-orbit. Spin-orbit interaction is one of the key technologies for spintronics. In this paper, we measured magneto-optical Kerr spectra of Pt/TbCo hetero-structure films on a thermally oxidized silicon substrate (0.3 mm); A: Pt (3 nm)/TbCo (6 nm)/Pt (3 nm), B: Si3N4 (10 nm)/TbCo (6 nm)/Pt (3 nm), and C: Pt (3 nm)/TbCo (6 nm)/Si3N4 (10 nm). Magneto-optical Kerr spectra of each sample were measured with a wavelength range of 300–700 nm, and were compared to the simulated spectra using the effective refractive index method. In the sample A, which has a symmetric structure, the simulated spectra are consistent with the measured ones. On the other hand, in the samples B and C, with an asymmetric structure, there are some differences between the simulated spectra and the measured ones in a lower photon energy region. This may be caused by interfacial effects of the spin-orbit interaction.

Asymmetric and Symmetric Exchange in a Generalized 2D Rashba Ferromagnet

Dzyaloshinskii-Moriya interaction (DMI) is investigated in a 2D ferromagnet (FM) with spin-orbit interaction of Rashba type at finite temperatures. The FM is described in the continuum limit by an effective s-d model with arbitrary dependence of spin-orbit coupling (SOC) and kinetic energy of itinerant electrons on the absolute value of momentum. In the limit of weak SOC, we derive a general expression for the DMI constant D from a microscopic analysis of the electronic grand potential. We compare D with the exchange stiffness A and show that, to the leading order in small SOC strength α_{R}, the conventional relation D=(4mα_{R}/ℏ)A, in general, does not hold beyond the Bychkov-Rashba model. Moreover, in this model, both A and D vanish at zero temperature in the metal regime (i.e., when two spin sub-bands are partly occupied). For nonparabolic bands or nonlinear Rashba coupling, these coefficients are finite and acquire a nontrivial dependence on the chemical potential that demonstrates the possibility to control the size and chirality of magnetic textures by adjusting a gate voltage.

Large-Voltage Tuning of Dzyaloshinskii-Moriya Interactions: A Route toward Dynamic Control of Skyrmion Chirality

Electric control of magnetism is a prerequisite for efficient and low-power spintronic devices. More specifically, in heavy metal-ferromagnet-insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties such as interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is crucial for the stability of magnetic skyrmions, has been challenging to achieve and has not been reported yet for ultrathin films. Here, we demonstrate a 130% variation of DMI with electric field in Ta/FeCoB/TaO _x trilayer through Brillouin Light Spectroscopy (BLS). Using polar magneto-optical Kerr-effect microscopy, we further show a monotonic variation of DMI and skyrmionic bubble size with electric field with an unprecedented efficiency. We anticipate through our observations that a sign reversal of DMI with an electric field is possible, leading to a chirality switch. This dynamic manipulation of DMI establishes an additional degree of control to engineer programmable skyrmion-based memory or logic devices.

Current-Induced Domain Wall Motion in a Compensated Ferrimagnet

Owing to the difficulty in detecting and manipulating the magnetic states of antiferromagnetic materials, studying their switching dynamics using electrical methods remains a challenging task. By employing heavy-metal-rare-earth-transition-metal alloy bilayers, we experimentally study current-induced domain wall dynamics in an antiferromagnetically coupled system. We show that the current-induced domain wall mobility reaches a maximum at the angular momentum compensation point. With experiment and modeling, we further reveal the internal structures of domain walls and the underlying mechanisms for their fast motion. We show that the chirality of the ferrimagnetic domain walls remains the same across the compensation points, suggesting that spin orientations of specific sublattices rather than net magnetization determine Dzyaloshinskii-Moriya interaction in heavy-metal-ferrimagnet bilayers. The high current-induced domain wall mobility and the robust domain wall chirality in compensated ferrimagnetic material opens new opportunities for high-speed spintronic devices.

In-plane direct current probing for spin orbit torque-driven effective fields in perpendicularly magnetized heavy metal/ferromagnet/oxide frames

Electrical manipulation of magnetization states has been the subject of intense focus as it is a long-standing goal in the emerging field of spintronics. In particular, torque generated by an in-plane current with a strong spin-orbit interaction shows promise for control of the adjacent ferromagnetic state in heavy-metal/ferromagnet/oxide frames. Thus, the ability to unlock precise spin orbit torque-driven effective fields represents one of the key approaches in this work. Here, we address an in-plane direct current measurement approach as a generic alternative tool to identify spin orbit torque-driven effective fields in a full polar angle range without adopting the commonly used harmonic analyses. Our experimental results exhibited a strongly polar angular dependency of the spin orbit torque-driven effective fields observed from Ta or W/CoFeM/MgO frames.

Skyrmions in Magnetic Tunnel Junctions

In this work, we demonstrate that skyrmions can be nucleated in the free layer of a magnetic tunnel junction (MTJ) with Dzyaloshinskii-Moriya interactions (DMIs) by a spin-polarized current with the assistance of stray fields from the pinned layer. The size, stability, and number of created skyrmions can be tuned by either the DMI strength or the stray field distribution. The interaction between the stray field and the DMI effective field is discussed. A device with multilevel tunneling magnetoresistance is proposed, which could pave the ways for skyrmion-MTJ-based multibit storage and artificial neural network computation. Our results may facilitate the efficient nucleation and electrical detection of skyrmions.