1
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Miyamoto T, Kondo A, Inaba T, Morimoto T, You S, Okamoto H. Terahertz radiation by quantum interference of excitons in a one-dimensional Mott insulator. Nat Commun 2023; 14:6229. [PMID: 37833316 PMCID: PMC10575914 DOI: 10.1038/s41467-023-41463-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/22/2022] [Accepted: 09/01/2023] [Indexed: 10/15/2023] Open
Abstract
Nearly monocyclic terahertz waves are used for investigating elementary excitations and for controlling electronic states in solids. They are usually generated via second-order optical nonlinearity by injecting a femtosecond laser pulse into a nonlinear optical crystal. In this framework, however, it is difficult to control phase and frequency of terahertz waves. Here, we show that in a one-dimensional Mott insulator of a nickel-bromine chain compound a terahertz wave is generated with high efficiency via strong electron modulations due to quantum interference between odd-parity and even-parity excitons produced by two-color femtosecond pulses. Using this method, one can control all of the phase, frequency, and amplitude of terahertz waves by adjusting the creation-time difference of two excitons with attosecond accuracy. This approach enables to evaluate the phase-relaxation time of excitons under strong electron correlations in Mott insulators. Moreover, phase- and frequency-controlled terahertz pulses are beneficial for coherent electronic-state controls with nearly monocyclic terahertz waves.
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Affiliation(s)
- Tatsuya Miyamoto
- Department of Advanced Materials Science, University of Tokyo, Chiba, 277-8561, Japan.
| | - Akihiro Kondo
- Department of Advanced Materials Science, University of Tokyo, Chiba, 277-8561, Japan
| | - Takeshi Inaba
- Department of Advanced Materials Science, University of Tokyo, Chiba, 277-8561, Japan
| | - Takeshi Morimoto
- Department of Advanced Materials Science, University of Tokyo, Chiba, 277-8561, Japan
| | - Shijia You
- Department of Advanced Materials Science, University of Tokyo, Chiba, 277-8561, Japan
| | - Hiroshi Okamoto
- Department of Advanced Materials Science, University of Tokyo, Chiba, 277-8561, Japan.
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2
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Wagner J, Sahasrabudhe A, Versteeg R, Wang Z, Tsurkan V, Loidl A, Hedayat H, van Loosdrecht PHM. Nonequilibrium dynamics of α-RuCl 3 - a time-resolved magneto-optical spectroscopy study. Faraday Discuss 2022; 237:237-258. [PMID: 35674250 DOI: 10.1039/d2fd00006g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We present time-resolved magneto-optical spectroscopy on the magnetic Mott-Hubbard-insulating Kitaev spin liquid candidate α-RuCl3 to investigate the nonequilibrium dynamics of its antiferromagnetically ordered zigzag groundstate after photoexcitation. A systematic study of the transient magnetic linear dichroism under different experimental conditions (temperature, external magnetic field, photoexcitation density) gives direct access to the dynamical interplay of charge excitations with the zigzag ordered state on ultrashort time scales. We observe a rather slow initial demagnetization (few to 10s of ps) followed by a long-lived non-thermal antiferromagnetic spin-disordered state (100-1000s of ps), which can be understood in terms of holons and doublons disordering the antiferromagnetic background after photoexcitation. Varying temperature and fluence in the presence of an external magnetic field reveals two distinct photoinduced dynamics associated with the zigzag and quantum paramagnetic disordered phases. The photo-induced non-thermal spin-disordered state shows universal compressed-exponential recovery dynamics related to the growth and propagation of zigzag domains on nanosecond time scales, which is interpreted within the framework of the Fatuzzo-Labrune model for magnetization reversal. The study of nonequilibrium states in strongly correlated materials is a relatively unexplored topic, but our results are expected to be extendable to a large class of Mott-Hubbard insulator materials with strong spin-orbit coupling.
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Affiliation(s)
- Julian Wagner
- Universität zu Köln, II. Physikalisches Institut, Zülpicher Straße 77, Köln D-50937, Germany.
| | - Anuja Sahasrabudhe
- Universität zu Köln, II. Physikalisches Institut, Zülpicher Straße 77, Köln D-50937, Germany.
| | - Rolf Versteeg
- Universität zu Köln, II. Physikalisches Institut, Zülpicher Straße 77, Köln D-50937, Germany.
| | - Zhe Wang
- Department of Physics, TU Dortmund University, Otto-Hahn-Str. 4, 44227 Dortmund, Germany
| | - Vladimir Tsurkan
- Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, 86135 Augsburg, Germany.,Institute of Applied Physics, Chisinau, MD 2028, Republic of Moldova
| | - Alois Loidl
- Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, 86135 Augsburg, Germany
| | - Hamoon Hedayat
- Universität zu Köln, II. Physikalisches Institut, Zülpicher Straße 77, Köln D-50937, Germany.
| | - Paul H M van Loosdrecht
- Universität zu Köln, II. Physikalisches Institut, Zülpicher Straße 77, Köln D-50937, Germany.
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3
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Li X, Ning H, Mehio O, Zhao H, Lee MC, Kim K, Nakamura F, Maeno Y, Cao G, Hsieh D. Keldysh Space Control of Charge Dynamics in a Strongly Driven Mott Insulator. PHYSICAL REVIEW LETTERS 2022; 128:187402. [PMID: 35594087 DOI: 10.1103/physrevlett.128.187402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2021] [Revised: 02/20/2022] [Accepted: 04/11/2022] [Indexed: 06/15/2023]
Abstract
The fate of a Mott insulator under strong low frequency optical driving conditions is a fundamental problem in quantum many-body dynamics. Using ultrafast broadband optical spectroscopy, we measured the transient electronic structure and charge dynamics of an off-resonantly pumped Mott insulator Ca_{2}RuO_{4}. We observe coherent bandwidth renormalization and nonlinear doublon-holon pair production occurring in rapid succession within a sub-100-fs pump pulse duration. By sweeping the electric field amplitude, we demonstrate continuous bandwidth tuning and a Keldysh crossover from a multiphoton absorption to quantum tunneling dominated pair production regime. Our results provide a procedure to control coherent and nonlinear heating processes in Mott insulators, facilitating the discovery of novel out-of-equilibrium phenomena in strongly correlated systems.
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Affiliation(s)
- Xinwei Li
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA
- Department of Physics, California Institute of Technology, Pasadena, California 91125, USA
| | - Honglie Ning
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA
- Department of Physics, California Institute of Technology, Pasadena, California 91125, USA
| | - Omar Mehio
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA
- Department of Physics, California Institute of Technology, Pasadena, California 91125, USA
| | - Hengdi Zhao
- Department of Physics, University of Colorado, Boulder, Colorado 80309, USA
| | - Min-Cheol Lee
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Republic of Korea
| | - Kyungwan Kim
- Department of Physics, Chungbuk National University, Cheongju, Chungbuk 28644, Republic of Korea
| | - Fumihiko Nakamura
- Department of Education and Creation Engineering, Kurume Institute of Technology, Fukuoka 830-0052, Japan
| | - Yoshiteru Maeno
- Department of Physics, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan
| | - Gang Cao
- Department of Physics, University of Colorado, Boulder, Colorado 80309, USA
| | - David Hsieh
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA
- Department of Physics, California Institute of Technology, Pasadena, California 91125, USA
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4
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Uchida K, Mattoni G, Yonezawa S, Nakamura F, Maeno Y, Tanaka K. High-Order Harmonic Generation and Its Unconventional Scaling Law in the Mott-Insulating Ca_{2}RuO_{4}. PHYSICAL REVIEW LETTERS 2022; 128:127401. [PMID: 35394320 DOI: 10.1103/physrevlett.128.127401] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2021] [Revised: 01/17/2022] [Accepted: 02/10/2022] [Indexed: 06/14/2023]
Abstract
Competition and cooperation among orders is at the heart of many-body physics in strongly correlated materials and leads to their rich physical properties. It is crucial to investigate what impact many-body physics has on extreme nonlinear optical phenomena, with the possibility of controlling material properties by light. However, the effect of competing orders and electron-electron correlations on highly nonlinear optical phenomena has not yet been experimentally clarified. Here, we investigated high-order harmonic generation from the Mott-insulating phase of Ca_{2}RuO_{4}. Changing the gap energy in Ca_{2}RuO_{4} as a function of temperature, we observed a strong enhancement of high order harmonic generation at 50 K, increasing up to several hundred times compared to room temperature. We discovered that this enhancement can be well reproduced by an empirical scaling law that depends only on the material gap energy and photon emission energy. Such a scaling law can hardly be explained by the electronic structure change in the single particle model and has not been predicted by previous theoretical studies on HHG in the simple Mott-Hubbard model. Our results suggest that the highly nonlinear optical response of strongly correlated materials is influenced by competition among the multiple degrees of freedom and electron-electron correlations.
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Affiliation(s)
- K Uchida
- Department of Physics, Graduate School of Science, Kyoto University, Kyoto, Kyoto 606-8502, Japan
| | - G Mattoni
- Department of Physics, Graduate School of Science, Kyoto University, Kyoto, Kyoto 606-8502, Japan
| | - S Yonezawa
- Department of Physics, Graduate School of Science, Kyoto University, Kyoto, Kyoto 606-8502, Japan
| | - F Nakamura
- Department of Education and Creation Engineering, Kurume Institute of Technology, Kurume, Fukuoka 830-0052, Japan
| | - Y Maeno
- Department of Physics, Graduate School of Science, Kyoto University, Kyoto, Kyoto 606-8502, Japan
| | - K Tanaka
- Department of Physics, Graduate School of Science, Kyoto University, Kyoto, Kyoto 606-8502, Japan
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5
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Huang Y, Mitchell T, Yost DC, Hu Y, Benedict JB, Grossman JC, Ren S. Emerged Metallicity in Molecular Ferromagnetic Wires. NANO LETTERS 2021; 21:9746-9753. [PMID: 34757755 DOI: 10.1021/acs.nanolett.1c03663] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Supramolecular engineering bridges molecular assembly with macromolecular charge-transfer salts, promising the design to construct supramolecular architectures that integrate cooperative properties difficult or impossible to find in conventional lattices. Here, we report the crystal engineering design and kinetic growth of one-dimensional supramolecular wires composed of bis(ethylenedithio)tetrathiafulvalene (ET+) cation and polymeric Cu[N(CN)2]2- anion. A bulk ferromagnetic order is discovered for filling up the gap where strong ferromagnetism is missing in such ET molecule-based charge-transfer salts. Metallicity is induced by electric current from the semiconducting wire, which is attributed to strain effect by tuning its close molecular contact. This structural feature is evidenced through the combination of various mechanistic spectroscopic studies. Electric dipole is established from the close molecular contacts and is suggestive to stabilize ferromagnetic spin interaction through anions bridging spin sites. The breakthrough shown here provides a pathway to explore low-dimensional supramolecular materials exhibiting strong electron correlation, metallicity, and ferromagnetism.
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Affiliation(s)
- Yulong Huang
- Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Travis Mitchell
- Department of Chemistry, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Dillon C Yost
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Yong Hu
- Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Jason B Benedict
- Department of Chemistry, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Jeffrey C Grossman
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Shenqiang Ren
- Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
- Department of Chemistry, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
- Research and Education in energy, Environment and Water (RENEW) Institute, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
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6
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Yamamoto HM. Phase-Transition Devices Based on Organic Mott Insulators. BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN 2021. [DOI: 10.1246/bcsj.20210256] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Hiroshi M. Yamamoto
- Institute for Molecular Science, Okazaki, Aichi 444-8585, Japan
- SOKENDAI (The Graduate University for Advanced Studies), Okazaki, Aichi 444-8585, Japan
- RIKEN, Wako, Saitama 351-0198, Japan
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7
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Yamakawa H, Miyamoto T, Morimoto T, Takamura N, Liang S, Yoshimochi H, Terashige T, Kida N, Suda M, Yamamoto HM, Mori H, Miyagawa K, Kanoda K, Okamoto H. Terahertz-field-induced polar charge order in electronic-type dielectrics. Nat Commun 2021; 12:953. [PMID: 33574221 PMCID: PMC7878852 DOI: 10.1038/s41467-021-20925-x] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/05/2020] [Accepted: 12/29/2020] [Indexed: 11/09/2022] Open
Abstract
Ultrafast electronic-phase change in solids by light, called photoinduced phase transition, is a central issue in the field of non-equilibrium quantum physics, which has been developed very recently. In most of those phenomena, charge or spin orders in an original phase are melted by photocarrier generations, while an ordered state is usually difficult to be created from a non-ordered state by a photoexcitation. Here, we demonstrate that a strong terahertz electric-field pulse changes a Mott insulator of an organic molecular compound in κ-(ET)2Cu[N(CN)2]Cl (ET = bis(ethylenedithio)tetrathiafulvalene), to a macroscopically polarized charge-order state; herein, electronic ferroelectricity is induced by the collective intermolecular charge transfers in each dimer. In contrast, in an isostructural compound, κ-(ET)2Cu2(CN)3, which shows the spin-liquid state at low temperatures, a similar polar charge order is not stabilized by the same terahertz pulse. From the comparative studies of terahertz-field-induced second-harmonic-generation and reflectivity changes in the two compounds, we suggest the possibility that a coupling of charge and spin degrees of freedom would play important roles in the stabilization of polar charge order.
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Affiliation(s)
- H Yamakawa
- Department of Advanced Materials Science, University of Tokyo, Chiba, 277-8561, Japan
| | - T Miyamoto
- Department of Advanced Materials Science, University of Tokyo, Chiba, 277-8561, Japan.
| | - T Morimoto
- Department of Advanced Materials Science, University of Tokyo, Chiba, 277-8561, Japan
| | - N Takamura
- Department of Advanced Materials Science, University of Tokyo, Chiba, 277-8561, Japan
| | - S Liang
- Department of Advanced Materials Science, University of Tokyo, Chiba, 277-8561, Japan
| | - H Yoshimochi
- Department of Applied Physics, University of Tokyo, Bunkyo-Ku, 113-8656, Japan
| | - T Terashige
- AIST-UTokyo Advanced Operand-Measurement Technology Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology, Chiba, 277-8589, Japan
| | - N Kida
- Department of Advanced Materials Science, University of Tokyo, Chiba, 277-8561, Japan
| | - M Suda
- Division of Functional Molecular Systems, Research Center of Integrative Molecular Systems (CIMoS), Institute for Molecular Science, Okazaki, 444-8585, Japan.,Department of Molecular Engineering, Kyoto University, Kyoto, 615-8510, Japan
| | - H M Yamamoto
- Division of Functional Molecular Systems, Research Center of Integrative Molecular Systems (CIMoS), Institute for Molecular Science, Okazaki, 444-8585, Japan
| | - H Mori
- Institute for Solid State Physics, University of Tokyo, Chiba, 277-8581, Japan
| | - K Miyagawa
- Department of Applied Physics, University of Tokyo, Bunkyo-Ku, 113-8656, Japan
| | - K Kanoda
- Department of Applied Physics, University of Tokyo, Bunkyo-Ku, 113-8656, Japan
| | - H Okamoto
- Department of Advanced Materials Science, University of Tokyo, Chiba, 277-8561, Japan. .,AIST-UTokyo Advanced Operand-Measurement Technology Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology, Chiba, 277-8589, Japan.
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8
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Tian X, Brennecka GL, Tan X. Direct Observations of Field-Intensity-Dependent Dielectric Breakdown Mechanisms in TiO 2 Single Nanocrystals. ACS NANO 2020; 14:8328-8334. [PMID: 32530595 DOI: 10.1021/acsnano.0c02346] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
One of the main challenges for next-generation electric power systems and electronics is to avoid premature dielectric breakdown in insulators and capacitors and to ensure reliable operations at higher electric fields and higher efficiencies. However, dielectric breakdown is a complex phenomenon and often involves many different processes simultaneously. Here we show distinctly different defect-related and intrinsic breakdown processes by studying individual, single-crystalline TiO2 nanoparticles using in situ transmission electron microscopy (TEM). As the applied electric field intensity rises, rutile-to-anatase phase transition, local amorphization/melting, and ablation are identified as the corresponding breakdown processes, the field intensity thresholds of which are found to be related to the position of the intensified field and the duration of the applied bias relative to the time of charged defects accumulation. Our observations reveal an intensity-dependent dielectric response of crystalline oxides at breakdown and suggest possible routes to suppress the initiation of premature dielectric breakdown. Hence, they will aid the design and development of next-generation robust and efficient solid dielectrics.
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Affiliation(s)
- Xinchun Tian
- Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011, United States
| | - Geoff Lee Brennecka
- Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401, United States
| | - Xiaoli Tan
- Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011, United States
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9
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Non-thermal resistive switching in Mott insulator nanowires. Nat Commun 2020; 11:2985. [PMID: 32532988 PMCID: PMC7293290 DOI: 10.1038/s41467-020-16752-1] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2020] [Accepted: 05/20/2020] [Indexed: 11/26/2022] Open
Abstract
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. Using nanowires of two archetypal Mott insulators—VO2 and V2O3 we unequivocally show that a purely non-thermal electrical IMT can occur in both materials. The mechanism behind this effect is identified as field-assisted carrier generation leading to a doping driven IMT. This effect can be controlled by similar means in both VO2 and V2O3, suggesting that the proposed mechanism is generally applicable to Mott insulators. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state-of-the-art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators. Despite intensive research on the electrically driven insulator-to-metal transition, this phenomenon is not well understood. Using quasi 1D nanowires of two Mott insulators, the authors reveal the central role of defects in enabling a non-thermal doping driven insulator-to metal transition.
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10
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Abstract
Dielectrics have long been considered as unsuitable for pure electrical switches; under weak electric fields, they show extremely low conductivity, whereas under strong fields, they suffer from irreversible damage. Here, we show that flexoelectricity enables damage-free exposure of dielectrics to strong electric fields, leading to reversible switching between electrical states—insulating and conducting. Applying strain gradients with an atomic force microscope tip polarizes an ultrathin film of an archetypal dielectric SrTiO3 via flexoelectricity, which in turn generates non-destructive, strong electrostatic fields. When the applied strain gradient exceeds a certain value, SrTiO3 suddenly becomes highly conductive, yielding at least around a 108-fold decrease in room-temperature resistivity. We explain this phenomenon, which we call the colossal flexoresistance, based on the abrupt increase in the tunneling conductance of ultrathin SrTiO3 under strain gradients. Our work extends the scope of electrical control in solids, and inspires further exploration of dielectric responses to strong electromechanical fields. Manipulating the electric state of large band gap dielectrics without any damage is quite challenging. Here, the authors demonstrate by mechanically introducing strain gradients that large electric fields are generated via flexoelectric interactions, resulting in a reversible Zener breakdown in SrTiO3, changing the resistivity by 108.
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11
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Lai CY, Zhu JX. Ultrafast X-Ray Absorption Spectroscopy of Strongly Correlated Systems: Core Hole Effect. PHYSICAL REVIEW LETTERS 2019; 122:207401. [PMID: 31172773 DOI: 10.1103/physrevlett.122.207401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2018] [Revised: 04/25/2019] [Indexed: 06/09/2023]
Abstract
In recent years, ultrafast pump-probe spectroscopy has provided insightful information about the nonequilibrium dynamics of excitations in materials. In a typical experiment of time-resolved x-ray absorption spectroscopy, the systems are excited by a femtosecond laser pulse (pump pulse) followed by an x-ray probe pulse after a time delay to measure the absorption spectra of the photoexcited systems. We present a theory for nonequilibrium x-ray absorption spectroscopy in one-dimensional strongly correlated systems. The core hole created by the x ray is modeled as an additional effective potential of the core hole site, which changes the spectrum qualitatively. In equilibrium, the spectrum reveals the charge gap at half-filling and the metal-insulator transition in the presence of the core hole effect. Furthermore, a pump-probe scheme is introduced to drive the system out of equilibrium before the x-ray probe. The effects of the pump pulse with varying frequencies, shapes, and fluences are discussed for the dynamics of strongly correlated systems in and out of resonance. The spectrum indicates that the driven insulating state has a metallic droplet around the core hole. The rich structures of the nonequilibrium x-ray absorption spectrum give more insight into the dynamics of electronic structures.
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Affiliation(s)
- Chen-Yen Lai
- Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA and Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
| | - Jian-Xin Zhu
- Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA and Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
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12
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Overcoming the thermal regime for the electric-field driven Mott transition in vanadium sesquioxide. Nat Commun 2019; 10:1159. [PMID: 30858368 PMCID: PMC6411733 DOI: 10.1038/s41467-019-09137-6] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/23/2018] [Accepted: 02/13/2019] [Indexed: 11/28/2022] Open
Abstract
The complex interplay among electronic, magnetic and lattice degrees of freedom in Mott-Hubbard materials leads to different types of insulator-to-metal transitions (IMT) which can be triggered by temperature, pressure, light irradiation and electric field. However, several questions remain open concerning the quantum or thermal nature of electric field-driven transition process. Here, using intense terahertz pulses, we reveal the emergence of an instantaneous purely-electronic IMT in the Mott-Hubbard vanadium sequioxide (V2O3) prototype material. While fast electronics allow thermal-driven transition involving Joule heating, which takes place after tens of picoseconds, terahertz electric field is able to induce a sub-picosecond electronic switching. We provide a comprehensive study of the THz induced Mott transition, showing a crossover from a fast quantum dynamics to a slower thermal dissipative evolution for increasing temperature. Strong-field terahertz-driven electronic transition paves the way to ultrafast electronic switches and high-harmonic generation in correlated systems. Thermal effects limit the speed of the electrically driven insulator-metal transition in V2O3 to tens of picoseconds. Here the authors show that under an intense THz-electric-field excitation the thermal regime can be overcome, achieving a purely electronic transition on ultrafast timescales.
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13
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Katayama I, Kawakami H, Araki K, Arashida Y, Minami Y, Nien LW, Handegard OS, Nagao T, Kitajima M, Takeda J. Ultrafast carrier generation in Bi 1-xSb x thin films induced by intense monocycle terahertz pulses. EPJ WEB OF CONFERENCES 2019. [DOI: 10.1051/epjconf/201920504016] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Abstract
Using terahertz-pump and terahertz-probe spectroscopy, we investigated terahertz-induced carrier generation processes in Bi1-xSbx thin films. The field dependence of the terahertz-induced transmittance change indicates distinct nonlinearity related to the Zener tunneling in narrow band-gap materials.
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14
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Diener P, Janod E, Corraze B, Querré M, Adda C, Guilloux-Viry M, Cordier S, Camjayi A, Rozenberg M, Besland MP, Cario L. How a dc Electric Field Drives Mott Insulators Out of Equilibrium. PHYSICAL REVIEW LETTERS 2018; 121:016601. [PMID: 30028165 DOI: 10.1103/physrevlett.121.016601] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2017] [Indexed: 06/08/2023]
Abstract
Out of equilibrium phenomena are a major issue of modern physics. In particular, correlated materials such as Mott insulators experience fascinating long-lived exotic states under a strong electric field. Yet, the origin of their destabilization by the electric field is not elucidated. Here we present a comprehensive study of the electrical response of canonical Mott insulators GaM_{4}Q_{8} (M=V, Nb, Ta, Mo; Q=S, Se) in the context of a microscopic theory of electrical breakdown where in-gap states allow for a description in terms of a two-temperature model. Our results show how the nonlinearities and the resistive transition originate from a massive creation of hot electrons under an electric field. These results give new insights for the control of the long-lived states reached under an electric field in these systems which has recently open the way to new functionalities used in neuromorphic applications.
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Affiliation(s)
- P Diener
- Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes Cedex 3, France
| | - E Janod
- Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes Cedex 3, France
| | - B Corraze
- Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes Cedex 3, France
| | - M Querré
- Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes Cedex 3, France
- Univ Rennes, CNRS, ISCR (Institut des Sciences chimiques de Rennes) UMR 6226, 35000 Rennes, France
| | - C Adda
- Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes Cedex 3, France
| | - M Guilloux-Viry
- Univ Rennes, CNRS, ISCR (Institut des Sciences chimiques de Rennes) UMR 6226, 35000 Rennes, France
| | - S Cordier
- Univ Rennes, CNRS, ISCR (Institut des Sciences chimiques de Rennes) UMR 6226, 35000 Rennes, France
| | - A Camjayi
- Departamento de Física, FCEyN, Universidad de Buenos Aires and IFIBA, Pabellón I, Ciudad Universitaria, 1428 CABA, Argentina
| | - M Rozenberg
- Laboratoire de Physique des Solides, Université Paris Sud, 91405 Orsay Cedex, France
| | - M P Besland
- Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes Cedex 3, France
| | - L Cario
- Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes Cedex 3, France
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15
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Singer A, Ramirez JG, Valmianski I, Cela D, Hua N, Kukreja R, Wingert J, Kovalchuk O, Glownia JM, Sikorski M, Chollet M, Holt M, Schuller IK, Shpyrko OG. Nonequilibrium Phase Precursors during a Photoexcited Insulator-to-Metal Transition in V_{2}O_{3}. PHYSICAL REVIEW LETTERS 2018; 120:207601. [PMID: 29864371 DOI: 10.1103/physrevlett.120.207601] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2017] [Indexed: 06/08/2023]
Abstract
Here, we photoinduce and directly observe with x-ray scattering an ultrafast enhancement of the structural long-range order in the archetypal Mott system V_{2}O_{3}. Despite the ultrafast increase in crystal symmetry, the change of unit cell volume occurs an order of magnitude slower and coincides with the insulator-to-metal transition. The decoupling between the two structural responses in the time domain highlights the existence of a transient photoinduced precursor phase, which is distinct from the two structural phases present in equilibrium. X-ray nanoscopy reveals that acoustic phonons trapped in nanoscale twin domains govern the dynamics of the ultrafast transition into the precursor phase, while nucleation and growth of metallic domains dictate the duration of the slower transition into the metallic phase. The enhancement of the long-range order before completion of the electronic transition demonstrates the critical role the nonequilibrium structural phases play during electronic phase transitions in correlated electrons systems.
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Affiliation(s)
- Andrej Singer
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093, USA
| | | | - Ilya Valmianski
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093, USA
| | - Devin Cela
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093, USA
| | - Nelson Hua
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093, USA
| | - Roopali Kukreja
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093, USA
- Center for Memory and Recording Research, University of California San Diego, La Jolla, California 92093, USA
| | - James Wingert
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093, USA
| | - Olesya Kovalchuk
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093, USA
| | - James M Glownia
- LCLS, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
| | - Marcin Sikorski
- LCLS, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
| | - Matthieu Chollet
- LCLS, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
| | - Martin Holt
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - Ivan K Schuller
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093, USA
| | - Oleg G Shpyrko
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, California 92093, USA
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