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Adhikari S, Kremer F, Lysevych M, Jagadish C, Tan HH. Core-shell GaN/AlGaN nanowires grown by selective area epitaxy. NANOSCALE HORIZONS 2023; 8:530-542. [PMID: 36825590 DOI: 10.1039/d2nh00500j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
GaN/AlGaN core-shell nanowires with various Al compositions have been grown on GaN nanowire array using selective area metal organic chemical vapor deposition technique. Growth of the AlGaN shell using pure N2 carrier gas resulted in a smooth surface for the nonpolar m-plane sidewalls with superior optical properties, whereas, growth using a mixed N2/H2 carrier gas resulted in a striated surface similar to the commonly observed morphology in the growth of nonpolar III-nitrides. The Al compositions in the AlGaN shells are found to be less than the gas phase input ratio. The systematic reduction in efficiency of Al incorporation in the AlGaN shells with increasing the Al molar flow in the gas phase is attributed to geometric loss, strain-limited Al incorporation, and increased gas phase parasitic reactions. Defect-related luminescence has been observed for AlGaN shells with Al content ≥ 30% and the origin of the defect luminescence has been determined as the (VIII-2ON)1- complex. Microstructural analysis of the AlGaN shells revealed that the dominant defects are partial dislocations. Growth of the nonpolar m-plane AlxGa1-xN/AlyGa1-yN quantum wells on the sidewalls of the GaN nanowires produced arrays with excellent morphology and optical emission, which demonstrated the viability of such a growth scheme for large area efficient ultraviolet LEDs as well as for next generation ultraviolet micro-LEDs.
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Affiliation(s)
- Sonachand Adhikari
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2600, Australia.
- Council of Scientific & Industrial Research - Central Electronics Engineering Research Institute, Pilani, Rajasthan 333031, India
| | - Felipe Kremer
- Centre for Advanced Microscopy, The Australian National University, Canberra, Australian Capital Territory 2600, Australia
| | - Mykhaylo Lysevych
- Australian National Fabrication Facility ACT Node, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2600, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2600, Australia.
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2600, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2600, Australia.
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2600, Australia
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Lambrecht WRL. Comment on "Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping" by W. Lin, J. Kang et al., Phys. Chem. Chem. Phys., 2022, 24, 5529. Phys Chem Chem Phys 2023; 25:4349-4351. [PMID: 36656603 DOI: 10.1039/d2cp01080a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
Abstract
Lu et al. (2022), 24, 5529 uses incorrect explanations for their findings based on an incorrect application of ideas from tight-binding methods. An alternative qualitative explanation based on strain variations and a tight-binding model based on nearest neighbor interactions is provided.
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Affiliation(s)
- Walter R L Lambrecht
- Department of Physics, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH-44106-7079, USA.
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3
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Chen Y, Zang H, Zhang S, Shi Z, Ben J, Jiang K, Jia Y, Liu M, Li D, Sun X. Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation. ACS APPLIED MATERIALS & INTERFACES 2022; 14:37947-37957. [PMID: 35957584 DOI: 10.1021/acsami.2c10039] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The epitaxy of III-nitrides on metallic substrates is competitive due to the advantages of vertical carrier injection, enhanced heat dissipation, and flexible application in various III-nitride-based devices. However, the serious lattice mismatch, atom diffusion, and interface reaction under the rigorous growth conditions have caused enormous obstacles. Based on the thermal and chemical stability of the graphene layer, we propose the van der Waals epitaxy of c-oriented wurtzite AlGaN on the polycrystalline Mo substrate by high-temperature metal-organic chemical vapor deposition. The insertion of a graphene layer interrupts the chaotic epitaxial relationship between the polycrystalline metal and epilayers, resulting in the single-crystalline orientation along the wurtzite (0002) plane and residual stress release in AlGaN because of the weak van der Waals interaction. We also demonstrate that the epitaxy of AlGaN on Mo metal possesses enhanced heat dissipation ability, in which the epilayer temperature is controlled at only 28.7 °C by the heating of a ∼54 °C hot plate. The heat dissipation enhancement for the present epitaxial structures provides a desirable strategy for the fabrication of efficient ultraviolet devices with excellent stability and lifetime.
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Affiliation(s)
- Yang Chen
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hang Zang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shanli Zhang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhiming Shi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianwei Ben
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ke Jiang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yuping Jia
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mingrui Liu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dabing Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaojuan Sun
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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4
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Lu S, Zheng T, Jiang K, Sun X, Li D, Chen H, Li J, Zhou Y, Cai D, Li S, Lin W, Kang J. Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping. Phys Chem Chem Phys 2022; 24:5529-5538. [PMID: 35172325 DOI: 10.1039/d1cp04303j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/02/2023]
Abstract
Quantum states and arrangement of valence levels determine most of the electronic and optical properties of semiconductors. Since the crystal field split-off hole (CH) band is the top valence band in high-Al-content AlGaN, TM-polarized optical anisotropy has become the limiting factor for efficient deep-ultraviolet (DUV) light emission. Additional potentials, including on-site Coulomb interaction and orbital state coupling induced by magnesium (Mg) doping, are proposed in this work to regulate the valence level arrangement of AlN/Al0.75Ga0.25N quantum wells (QWs). Diverse responses of valence quantum states |pi〉 (i = x, y, or z) of AlGaN to additional potentials due to different configurations and interactions of orbitals revealed by first-principles simulations are understood in terms of the linear combination of atomic orbital states. A positive charge and large Mg dopant in QWs introduce an additional Coulomb potential and modulate the orbital coupling distance. For the CH band (pz orbital), the Mg-induced Coulomb potential compensates the orbital coupling energy. Meanwhile, the heavy/light hole (HH/LH) bands (px and py orbitals) are elevated by the Mg-induced Coulomb potential. Consequently, HH/LH energy levels are relatively shifted upward and replace the CH level to be the top of the valence band. The inversion of optical anisotropy and enhancement of TE-polarized emission are further confirmed experimentally via spectroscopic ellipsometry.
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Affiliation(s)
- Shiqiang Lu
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China.
| | - Tongchang Zheng
- Department of Physics, School of Science, Jimei University, Xiamen 361021, China
| | - Ke Jiang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road No. 3888, Changchun 130033, China
| | - Xiaojuan Sun
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road No. 3888, Changchun 130033, China
| | - Dabing Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road No. 3888, Changchun 130033, China
| | - Hangyang Chen
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China.
| | - Jinchai Li
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China.
| | - Yinghui Zhou
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China.
| | - Duanjun Cai
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China.
| | - Shuping Li
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China.
| | - Wei Lin
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China.
| | - Junyong Kang
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China.
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Yu H, Jia H, Liu Z, Memon MH, Tian M, Fang S, Wang D, Zhang H, Liu J, Xu L, Yang T, Wei L, Liao Z, Sun H. Development of highly efficient ultraviolet LEDs on hybrid patterned sapphire substrates. OPTICS LETTERS 2021; 46:5356-5359. [PMID: 34724474 DOI: 10.1364/ol.441300] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/26/2021] [Accepted: 10/01/2021] [Indexed: 06/13/2023]
Abstract
A hybrid patterned sapphire substrate (HPSS) aiming to achieve high-quality Al(Ga)N epilayers for the development of GaN-based ultraviolet light-emitting diodes (UV LEDs) has been prepared. The high-resolution X-ray diffraction measurements reveal that the Al(Ga)N epilayers grown on a HPSS and conventional patterned sapphire substrate (CPSS) have similar structural quality. More importantly, benefiting from the larger refractive index contrast between the patterned silica array and sapphire, the photons can escape from the hybrid substrate with an improved transmittance in the UV band. As a result, in comparison with the UV LEDs grown on the CPSS, the LEDs grown on the HPSS exhibit a significantly enhanced light output power by 14.5% and more than 22.9% higher peak external quantum efficiency, owing to the boost of the light extraction efficiency from the adoption of the HPSS which can be used as a promising substrate to realize high-efficiency and high-power UV LEDs of the future.
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Kang J, Hong M, Tian Z. Special issue on the 100 th anniversary of Xiamen University. LIGHT, SCIENCE & APPLICATIONS 2021; 10:185. [PMID: 34521816 PMCID: PMC8440623 DOI: 10.1038/s41377-021-00613-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2021] [Accepted: 08/08/2021] [Indexed: 06/13/2023]
Affiliation(s)
- Junyong Kang
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, 361005, Xiamen, China.
| | - Minghui Hong
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576, Singapore, Singapore
| | - Zhongqun Tian
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials, College of Chemistry and Chemical Engineering, Xiamen University, 361005, Xiamen, China
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7
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Shi Z, Qi Z, Zang H, Jiang K, Chen Y, Jia Y, Wu T, Zhang S, Sun X, Li D. Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission. ACS APPLIED MATERIALS & INTERFACES 2021; 13:37380-37387. [PMID: 34313423 DOI: 10.1021/acsami.1c09175] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A single-photon emission (SPE) system based on a solid state is one of the fundamental branches in quantum information and communication technologies. The traditional bulk semiconductors suffered limitations of difficult photon extraction and long radiative lifetime. Two-dimensional (2D) semiconductors with an entire open structure and low dielectric screening can overcome these shortcomings. In this work, we focus on monolayer h-AlN due to its wide band gap and the successful achievement of SPE compared to its bulk counterpart. We systematically investigate the properties of point defects, including vacancies, antisites, and impurities, in monolayer h-AlN by employing hybrid density functional theory calculations. The -1 charged Al vacancy (VAl-) and +1 charged nitrogen antisite (NAl+) are predicted to achieve SPE with the zero-phonon lines of 0.77 and 1.40 eV, respectively. Moreover, the charged point-defect complex CAlVN+, which is composed of vacancies and carbon substitutions, also can be used for SPE. Our results extend the avenue for realizing SPE in 2D semiconductors.
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Affiliation(s)
- Zhiming Shi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Zhanbin Qi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hang Zang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Ke Jiang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Yang Chen
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Yuping Jia
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Tong Wu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Shanli Zhang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Xiaojuan Sun
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Dabing Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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8
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Wang HQ, Xu J, Lin X, Li Y, Kang J, Zheng JC. Determination of the embedded electronic states at nanoscale interface via surface-sensitive photoemission spectroscopy. LIGHT, SCIENCE & APPLICATIONS 2021; 10:153. [PMID: 34315859 PMCID: PMC8316467 DOI: 10.1038/s41377-021-00592-9] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2020] [Revised: 06/24/2021] [Accepted: 07/06/2021] [Indexed: 05/18/2023]
Abstract
The fabrication of small-scale electronics usually involves the integration of different functional materials. The electronic states at the nanoscale interface plays an important role in the device performance and the exotic interface physics. Photoemission spectroscopy is a powerful technique to probe electronic structures of valence band. However, this is a surface-sensitive technique that is usually considered not suitable for the probing of buried interface states, due to the limitation of electron-mean-free path. This article reviews several approaches that have been used to extend the surface-sensitive techniques to investigate the buried interface states, which include hard X-ray photoemission spectroscopy, resonant soft X-ray angle-resolved photoemission spectroscopy and thickness-dependent photoemission spectroscopy. Especially, a quantitative modeling method is introduced to extract the buried interface states based on the film thickness-dependent photoemission spectra obtained from an integrated experimental system equipped with in-situ growth and photoemission techniques. This quantitative modeling method shall be helpful to further understand the interfacial electronic states between functional materials and determine the interface layers.
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Affiliation(s)
- Hui-Qiong Wang
- Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, 361005, China.
- Department of Physics, Xiamen University Malaysia, Sepang, 43900, Malaysia.
- Department of New Energy Science and Engineering, Xiamen University Malaysia, Sepang, 43900, Malaysia.
| | - Jiayi Xu
- Department of New Energy Science and Engineering, Xiamen University Malaysia, Sepang, 43900, Malaysia
| | - Xiaoyuan Lin
- Department of New Energy Science and Engineering, Xiamen University Malaysia, Sepang, 43900, Malaysia
| | - Yaping Li
- Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, 361005, China
- College of Science, Henan University of Technology, Zhengzhou, 450001, China
| | - Junyong Kang
- Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, 361005, China
| | - Jin-Cheng Zheng
- Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, 361005, China.
- Department of Physics, Xiamen University Malaysia, Sepang, 43900, Malaysia.
- Department of New Energy Science and Engineering, Xiamen University Malaysia, Sepang, 43900, Malaysia.
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Li J, Gao N, Cai D, Lin W, Huang K, Li S, Kang J. Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes. LIGHT, SCIENCE & APPLICATIONS 2021; 10:129. [PMID: 34150202 PMCID: PMC8206881 DOI: 10.1038/s41377-021-00563-0] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2020] [Revised: 04/25/2021] [Accepted: 05/24/2021] [Indexed: 05/22/2023]
Abstract
As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light sources (200-280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission, which further reveals their wide applications from biological, environmental, industrial to medical. However, the relatively low external quantum efficiencies (mostly lower than 10%) strongly restrict their wider or even potential applications, which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures. Here, we review recent progress in the development of novel concepts and techniques in AlGaN-based LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures. In addition, we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments.
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Affiliation(s)
- Jinchai Li
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005 Xiamen, China
| | - Na Gao
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005 Xiamen, China
| | - Duanjun Cai
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005 Xiamen, China
| | - Wei Lin
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005 Xiamen, China
| | - Kai Huang
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005 Xiamen, China
| | - Shuping Li
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005 Xiamen, China
| | - Junyong Kang
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005 Xiamen, China
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