Ambipolar ferromagnetism by electrostatic doping of a manganite

Electric-field control of reversible electronic and magnetic transitions in two-dimensional oxide monolayer magnets

Atomically thin oxide magnetic materials are highly desirable due to the promising potential to integrate two-dimensional (2D) magnets into next-generation spintronics. Therefore, 2D oxide magnetism is expected to be effectively tuned by the magnetic and electrical fields, holding prospective for future low-dissipation electronic devices. However, the electric-field control of 2D oxide monolayer magnetism has rarely been reported. Here, we present the realization of 2D monolayer magnetism in oxide (SrRuO3)1/(SrTiO3)N (N = 1, 3) superlattices that shows an efficient and reversible phase transition through electric-field controlled proton (H+) evolution. By using ionic liquid gating to modulate the proton concentration in (SrRuO3)1/(SrTiO3)1 superlattice, an electric-field induced metal-insulator transition was observed, along with gradually suppressed magnetic ordering and modulated magnetic anisotropy. Theoretical analysis reveals that proton intercalation plays a crucial role in both electronic and magnetic phase transitions. Strikingly, SrTiO3 layers can act as a proton sieve, which have a significant influence on proton evolution. Our work stimulates the tuning functionality of 2D oxide monolayer magnetism by voltage control, providing potential for future energy-efficient electronics.

Single Mo Atoms Stabilized on High-Entropy Perovskite Oxide: A Frontier for Aerobic Oxidative Desulfurization

The design and preparation of catalysts with both excellent stability and maximum exposure of catalytic active sites is highly desirable; however, it remains challenging in heterogeneous catalysis. Herein, a entropy-stabilized single-site Mo catalyst via a high-entropy perovskite oxide LaMn_0.2Fe_0.2Co_0.2Ni_0.2Cu_0.2O₃ (HEPO) with abundant mesoporous structures was initiated by a sacrificial-template strategy. The presence of electrostatic interaction between graphene oxide and metal precursors effectively inhibits the agglomeration of precursor nanoparticles in a high-temperature calcination process, thereby endowing the atomically dispersed Mo⁶⁺ coordinated with four O atoms on the defective sites of HEPO. The unique structure of single-site Mo atoms' random distribution with an atomic scale greatly enriches the oxygen vacancy and increases surface exposure of the catalytic active sites on the Mo/HEPO-SAC catalyst. As a result, the obtained Mo/HEPO-SAC exhibits robust recycling stability and ultra-high oxidation activity (turnover frequency = 3.28 × 10^-2) for the catalytic removal of dibenzothiophene (DBT) with air as the oxidant, which represents the top level and is strikingly higher than the state-of-the-art oxidation desulfurization catalysts reported previously under the same or similar reaction conditions. Therefore, the finding here for the first time expands the application of single-atom Mo-supported HEPO materials into the field of ultra-deep oxidative desulfurization.

Tuning Magnetoconductivity in LaMnO3 NPs through Cationic Vacancy Control

The inclusion of La-Mn vacancies in LaMnO₃ nanoparticles leads to a noticeable change in conductivity behavior. The sample retains its overall insulator characteristic, with a typical thermal activation mechanism at high temperatures, but it presents high magnetoconductivity below 200 K. The activation energy decreases linearly with the square of the reduced magnetization and vanishes when the sample is magnetized at saturation. Therefore, it turns out that electron hopping between Mn³⁺ and Mn⁴⁺ largely contributes to the conductivity below the Curie temperature. The influence of the applied magnetic field on conductivity also supports the hypothesis of hopping contribution, and the electric behavior can be explained as being due to an increase in the hopping probability via spin alignment.

Generating intense electric fields in 2D materials by dual ionic gating

The application of an electric field through two-dimensional materials (2DMs) modifies their properties. For example, a bandgap opens in semimetallic bilayer graphene while the bandgap shrinks in few-layer 2D semiconductors. The maximum electric field strength achievable in conventional devices is limited to ≤0.3 V/nm by the dielectric breakdown of gate dielectrics. Here, we overcome this limit by suspending a 2DM between two volumes of ionic liquid (IL) with independently controlled potentials. The potential difference between the ILs falls across an ultrathin layer consisting of the 2DM and the electrical double layers above and below it, producing an intense electric field larger than 4 V/nm. This field is strong enough to close the bandgap of few-layer WSe₂, thereby driving a semiconductor-to-metal transition. The ability to apply fields an order of magnitude higher than what is possible in dielectric-gated devices grants access to previously-inaccessible phenomena occurring in intense electric fields.

The application of electric fields >1 V/nm in solid state devices could provide access to unexplored phenomena, but it is currently difficult to implement. Here, the authors develop a double-sided ionic liquid gating technique to generate electric fields as large as 4 V/nm across few-layer WSe₂, leading to field-induced semiconductor-to-metal transitions.

Two-dimensional multiferroic material of metallic p-doped SnSe

Two-dimensional multiferroic materials have garnered broad interests attributed to their magnetoelectric properties and multifunctional applications. Multiferroic heterostructures have been realized, nevertheless, the direct coupling between ferroelectric and ferromagnetic order in a single material still remains challenging, especially for two-dimensional materials. Here, we develop a physical vapor deposition approach to synthesize two-dimensional p-doped SnSe. The local phase segregation of SnSe₂ microdomains and accompanying interfacial charge transfer results in the emergence of degenerate semiconductor and metallic feature in SnSe. Intriguingly, the room-temperature ferrimagnetism has been demonstrated in two-dimensional p-doped SnSe with the Curie temperature approaching to ~337 K. Meanwhile, the ferroelectricity is maintained even under the depolarizing field introduced by SnSe₂. The coexistence of ferrimagnetism and ferroelectricity in two-dimensional p-doped SnSe verifies its multiferroic feature. This work presents a significant advance for exploring the magnetoelectric coupling in two-dimensional limit and constructing high-performance logic devices to extend Moore’s law.

2D multiferroic materials have garnered broad interests due to their magnetoelectric properties and multifunctional applications. Here, the authors discover a multiferroic feature in physical vapor deposition synthesized 2D metallic p-doped SnSe.

Doping-driven topological polaritons in graphene/α-MoO3 heterostructures

Control over charge carrier density provides an efficient way to trigger phase transitions and modulate the optoelectronic properties of materials. This approach can also be used to induce topological transitions in the optical response of photonic systems. Here we report a topological transition in the isofrequency dispersion contours of hybrid polaritons supported by a two-dimensional heterostructure consisting of graphene and α-phase molybdenum trioxide. By chemically changing the doping level of graphene, we observed that the topology of polariton isofrequency surfaces transforms from open to closed shapes as a result of doping-dependent polariton hybridization. Moreover, when the substrate was changed, the dispersion contour became dominated by flat profiles at the topological transition, thus supporting tunable diffractionless polariton propagation and providing local control over the optical contour topology. We achieved subwavelength focusing of polaritons down to 4.8% of the free-space light wavelength by using a 1.5-μm-wide silica substrate as an in-plane lens. Our findings could lead to on-chip applications in nanoimaging, optical sensing and manipulation of energy transfer at the nanoscale.

Ionic Liquid Gating and Phase Transition Induced Semiconducting to Metallic Transition in La0.67Sr0.33MnO3/BaTiO3 Heterostructures

The strongly correlated La_0.67Sr_0.33MnO₃ (LSMO) thin films were deposited on the BaTiO₃ (BTO) substrates to study the influence of temperature-dependent phase transition of BTO on the magnetic and electric transport properties of the LSMO films. Because of the large lattice mismatch between the LSMO and BTO substrates, the ultrathin LSMO film exhibits semiconducting transport behavior rather than the normal metal-insulator transition behavior. A Mn²⁺-O^2--Mn³⁺ dominated double exchange interaction, which leads to a semiconducting to metallic transition behavior, was formed by the joint effect of the ion-liquid gating and phase transition of the BTO substrates. Our work shows a special way to modulate the conduction mechanism, which opens up a new field for further study of the magnetoelectric coupling of the LSMO/BTO heterostructures.

Atomic Origin of Interface-Dependent Oxygen Migration by Electrochemical Gating at the LaAlO3-SrTiO3 Heterointerface

Electrical control of material properties based on ionic liquids (IL) has seen great development and emerging applications in the field of functional oxides, mainly understood by the electrostatic and electrochemical gating mechanisms. Compared to the fast, flexible, and reproducible electrostatic gating, electrochemical gating is less controllable owing to the complex behaviors of ion migration. Here, the interface-dependent oxygen migration by electrochemical gating is resolved at the atomic scale in the LaAlO3-SrTiO3 system through ex situ IL gating experiments and on-site atomic-resolution characterization. The difference between interface structures leads to the controllable electrochemical oxygen migration by filling oxygen vacancies. The findings not only provide an atomic-scale insight into the origin of interface-dependent electrochemical gating but also demonstrate an effective way of engineering interface structure to control the electrochemical gating.

Voltage-induced ferromagnetism in a diamagnet

Increasingly impressive demonstrations of voltage-controlled magnetism have been achieved recently, highlighting potential for low-power data processing and storage. Magnetoionic approaches appear particularly promising, electrolytes and ionic conductors being capable of on/off control of ferromagnetism and tuning of magnetic anisotropy. A clear limitation, however, is that these devices either electrically tune a known ferromagnet or electrically induce ferromagnetism from another magnetic state, e.g., antiferromagnetic. Here, we demonstrate that ferromagnetism can be voltage-induced even from a diamagnetic (zero-spin) state suggesting that useful magnetic phases could be electrically induced in "nonmagnetic" materials. We use ionic liquid-gated diamagnetic FeS2 as a model system, showing that as little as 1 V induces a reversible insulator-metal transition by electrostatic surface inversion. Anomalous Hall measurements then reveal electrically tunable surface ferromagnetism at up to 25 K. Density functional theory-based modeling explains this in terms of Stoner ferromagnetism induced via filling of a narrow e g band.

Electric-Field-Controlled Antiferromagnetic Spintronic Devices

In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach for achieving ultralow power spintronic devices via suppressing Joule heating. Here, cutting-edge research, including electric-field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, is comprehensively reviewed. Various emergent topics such as the Néel spin-orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, 2D magnetism, and magneto-ionic modulation with respect to antiferromagnets are examined. In conclusion, the possibility of realizing high-quality room-temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons is highlighted. It is expected that this work provides an appropriate and forward-looking perspective that will promote the rapid development of this field.

GdFe0.8Ni0.2O3: A Multiferroic Material for Low-Power Spintronic Devices with High Storage Capacity

Multiferroic materials are strong candidates for reducing the energy consumption of voltage-controlled spintronic devices because of the coexistence of ferroelectric (FE) and magnetic orders in a single phase. In this article, we present a new multiferroic perovskite, GdNi_xFe_1-xO₃ (GFNO), produced via sputtering on a SrTiO₃ substrate. The proposed GFNO is FE and canted antiferromagnetic (AFM) within a monoclinic framework at room temperature. The FE polarization of the GFNO is up to 37 μC/cm². When capped with a Co layer, the resulting heterostructure exhibits voltage-controlled magnetism (VCM). The heterostructured device exhibits two distinct features. First, its VCM depends on the magnitude as well as the polarity of the applied bias, thereby doubling the number of available magnetic readout states under a fixed voltage. Furthermore, the magnetic order of the device can be controlled very effectively within ±1 V. These two characteristics satisfy the requirements for low-power and high-storage technology. Theoretical analysis and experimental results indicate the importance of Ni dopant in regulating the polarity-dependent multiferroicity of this gadolinium ferrite system.

Controlling the Magnetic Properties of LaMnO3 /SrTiO3 Heterostructures by Stoichiometry and Electronic Reconstruction: Atomic-Scale Evidence

Interface-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking are of importance for fundamental physics and device applications. How interfaces affect the interplay between charge, spin, orbital, and lattice degrees of freedom is the key to boosting device performance. In LaMnO₃ /SrTiO₃ (LMO/STO) polar-nonpolar heterostructures, electronic reconstruction leads to an antiferromagnetic to ferromagnetic transition, making them viable for spin filter applications. The interfacial electronic structure plays a critical role in the understanding of the microscopic origins of the observed magnetic phase transition, from antiferromagnetic at 5 unit cells (ucs) of LMO or below to ferromagnetic at 6 ucs or above, yet such a study is missing. Here, an atomic scale understanding of LMO/STO ambipolar ferromagnetism is offered by quantifying the interface charge distribution and performing first-principles density functional theory (DFT) calculations across this abrupt magnetic transition. It is found that the electronic reconstruction is confined within the first 3 ucs of LMO from the interface, and more importantly, it is robust against oxygen nonstoichiometry. When restoring stoichiometry, an enhanced ferromagnetic insulating state in LMO films with a thickness as thin as 2 nm (5 uc) is achieved, making LMO readily applicable as barriers in spin filters.

Voltage-Control of Magnetism in All-Solid-State and Solid/Liquid Magnetoelectric Composites

The control of magnetism by means of low-power electric fields, rather than dissipative flowing currents, has the potential to revolutionize conventional methods of data storage and processing, sensing, and actuation. A promising strategy relies on the utilization of magnetoelectric composites to finely tune the interplay between electric and magnetic degrees of freedom at the interface of two functional materials. Albeit early works predominantly focused on the magnetoelectric coupling at solid/solid interfaces; however, recently there has been an increased interest related to the opportunities offered by liquid-gating techniques. Here, a comparative overview on voltage control of magnetism in all-solid-state and solid/liquid composites is presented within the context of the principal coupling mediators, i.e., strain, charge carrier doping, and ionic intercalation. Further, an exhaustive and critical discussion is carried out, concerning the suitability of using the common definition of coupling coefficient α C = Δ M Δ E   to compare the strength of the interaction between electricity and magnetism among different magnetoelectric systems.

Charge-governed phase manipulation of few-layer tellurium

Few-layer tellurium is an emerging quasi-one-dimensional layered material. The striking feature of Te is its presence as various few-layer allotropes (α-δ). Although these allotropes offer substantially different physical properties, only the α phase has been synthesized in neutral few-layers as it is so far the most stable few-layer form. Herein, we show that hole or electron doping could maintain a certain Te phase. The β, α, γ and δ phases appear as the most stable forms of Te bilayer, in sequence, with bandgap variations over 1 eV. In Te trilayer, a novel metallic chiral α + δ phase emerges, leading to the appearance of chirality. Transitions among these phases, understood at the wavefunction level, are accompanied by the emergence or elimination of inversion centers (α-β, α-γ, α-α + δ), structural anisotropy (α-γ, γ-δ) and chirality (α-α + δ), which could result in substantial changes in optical and other properties. In light of these findings, our work opens a new avenue for stabilizing different allotropes of layered materials; this is crucial for using their outstanding properties. This study also suggests the possibility of building mono-elemental electronic and optoelectronic heterostructures or devices, which are attractive for future applications in electronics.

Interface Engineering and Emergent Phenomena in Oxide Heterostructures

Complex oxide interfaces have mesmerized the scientific community in the last decade due to the possibility of creating tunable novel multifunctionalities, which are possible owing to the strong interaction among charge, spin, orbital, and structural degrees of freedom. Artificial interfacial modifications, which include defects, formal polarization, structural symmetry breaking, and interlayer interaction, have led to novel properties in various complex oxide heterostructures. These emergent phenomena not only serve as a platform for investigating strong electronic correlations in low-dimensional systems but also provide potentials for exploring next-generation electronic devices with high functionality. Herein, some recently developed strategies in engineering functional oxide interfaces and their emergent properties are reviewed.