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1
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Lee S, An S, Baek E, Kim D, Cho J, You CY. Electrically switchable ON-OFF spin-orbit torque in an ionic-gated metallic trilayer. SCIENCE ADVANCES 2025; 11:eadr0457. [PMID: 40106573 PMCID: PMC11922056 DOI: 10.1126/sciadv.adr0457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2024] [Accepted: 02/11/2025] [Indexed: 03/22/2025]
Abstract
With the advancement of magnetization-based spintronic applications, there has been considerable interest in spin-orbit torque as an electric technique to dynamically manipulate magnetization. In this study, gate-induced ON-OFF switchable spin-orbit torque in Pt/Co/Pt spin-orbit device using the ionic gating technique is reported. By canceling the spin currents from Pt layers, the OFF state is attained in Pt/Co/Pt spin-orbit device. Notably, under a strong negative gate electric field applied to the Pt/Co/Pt spin-orbit device, the damping-like spin-orbit torque is markedly enhanced over sixfold compared with the applied positive gate electric field. We show that the gate modulation of the spin-orbit torque in the Pt/Co/Pt spin-orbit device can be explained by considering the change of the spin-charge interconversion by electric gating. This research serves as a promising avenue for electrically programmable spintronic devices.
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Affiliation(s)
- Soobeom Lee
- Department of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology, Daegu 42988, Republic of Korea
- Basic Science Research Center, Daegu Gyeongbuk Institute of Science and Technology, Daegu 42988, Republic of Korea
| | - Suhyeok An
- Department of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology, Daegu 42988, Republic of Korea
| | - Eunchong Baek
- Department of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology, Daegu 42988, Republic of Korea
| | - Dongryul Kim
- Department of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology, Daegu 42988, Republic of Korea
| | - Jaeyong Cho
- Department of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology, Daegu 42988, Republic of Korea
| | - Chun-Yeol You
- Department of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology, Daegu 42988, Republic of Korea
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2
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Wang YZ, Zhang TY, Dong J, Chen P, Yu GQ, Wan CH, Han XF. Voltage-Controlled Magnon Transistor via Tuning Interfacial Exchange Coupling. PHYSICAL REVIEW LETTERS 2024; 132:076701. [PMID: 38427900 DOI: 10.1103/physrevlett.132.076701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Revised: 09/28/2023] [Accepted: 01/11/2024] [Indexed: 03/03/2024]
Abstract
Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics, which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of magnons (the key carriers of spin-angular momenta in the magnonics). However, also due to their electric neutrality, magnons have no access to directly interact with an electric field and it is thus difficult to manipulate magnon transport by voltages straightforwardly. Here, we demonstrated a gate voltage (V_{g}) applied on a nonmagnetic metal and magnetic insulator (MI) interface that bent the energy band of the MI and then modulated the probability for conduction electrons in the nonmagnetic metal to tunnel into the MI, which can consequently enhance or weaken the spin-magnon conversion efficiency at the interface. A voltage-controlled magnon transistor based on the magnon-mediated electric current drag (MECD) effect in a Pt-Y_{3}Fe_{5}O_{12}-Pt sandwich was then experimentally realized with V_{g} modulating the magnitude of the MECD signal. The obtained efficiency (the change ratio between the MECD voltage at ±V_{g}) reached 10%/(MV/cm) at 300 K. This prototype of magnon transistor offers an effective scheme to control magnon transport by a gate voltage.
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Affiliation(s)
- Y Z Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - T Y Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - J Dong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - P Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - G Q Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - C H Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - X F Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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3
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Barough V, Jamilpanah L, Zare M, Ghanaatshoar M, Mohseni SM. Skin-effect-mediated magnetoionic control of charge transport in thick layers. Sci Rep 2024; 14:3332. [PMID: 38336914 PMCID: PMC10858034 DOI: 10.1038/s41598-024-53970-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/23/2023] [Accepted: 02/07/2024] [Indexed: 02/12/2024] Open
Abstract
In the rapidly developing area of magnetoionics (MI), which combines electrochemistry and magnetism, changes in the surface chemistry of magnetic materials in response to gate voltages cause dramatic modifications in the magnetic characteristics, resulting in low power-consuming charge transport tuning. Due to the surficial character, only magnetic thin films have been addressed for the MI effect's role in controlling charge transfer. Here, we show how it can be used to regulate the transit of charges in bulk magnetic materials. This is accomplished by combining high-permeability magnetic materials with a high-frequency passing current, allowing the skin effect and the MI effect to control the magnetic materials' impedance due to the impedance's high sensitivity to magnetic permeability. Our in-situ impedance measurement and magneto-optical characterization show the role of redox reactions at the surface in controlling impedance in magnetic materials. This research paves the way for using the MI effect in high-permeability bulk magnetic materials.
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Affiliation(s)
- V Barough
- Department of Physics, Shahid Beheshti University, Tehran, 1983969411, Iran
| | - L Jamilpanah
- Department of Physics, Shahid Beheshti University, Tehran, 1983969411, Iran
- Empa - Swiss Federal Laboratories for Materials Science and Technology, 8600, Dubendorf, Switzerland
| | - M Zare
- Department of Physics, Shahid Beheshti University, Tehran, 1983969411, Iran
| | - M Ghanaatshoar
- Laser and Plasma Research Institute, Shahid Beheshti University, Tehran, 1983969411, Iran
| | - S M Mohseni
- Department of Physics, Shahid Beheshti University, Tehran, 1983969411, Iran.
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4
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Ilyakov I, Brataas A, de Oliveira TVAG, Ponomaryov A, Deinert JC, Hellwig O, Faßbender J, Lindner J, Salikhov R, Kovalev S. Efficient ultrafast field-driven spin current generation for spintronic terahertz frequency conversion. Nat Commun 2023; 14:7010. [PMID: 37919284 PMCID: PMC10622539 DOI: 10.1038/s41467-023-42845-8] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2023] [Accepted: 10/24/2023] [Indexed: 11/04/2023] Open
Abstract
Efficient generation and control of spin currents launched by terahertz (THz) radiation with subsequent ultrafast spin-to-charge conversion is the current challenge for the next generation of high-speed communication and data processing units. Here, we demonstrate that THz light can efficiently drive coherent angular momentum transfer in nanometer-thick ferromagnet/heavy-metal heterostructures. This process is non-resonant and does neither require external magnetic fields nor cryogenics. The efficiency of this process is more than one order of magnitude higher as compared to the recently observed THz-induced spin pumping in MnF2 antiferromagnet. The coherently driven spin currents originate from the ultrafast spin Seebeck effect, caused by a THz-induced temperature imbalance in electronic and magnonic temperatures and fast relaxation of the electron-phonon system. Owing to the fact that the electron-phonon relaxation time is comparable with the period of a THz wave, the induced spin current results in THz second harmonic generation and THz optical rectification, providing a spintronic basis for THz frequency mixing and rectifying components.
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Affiliation(s)
- Igor Ilyakov
- Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328, Dresden, Germany.
| | - Arne Brataas
- Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, NO-7491, Trondheim, Norway
| | | | - Alexey Ponomaryov
- Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328, Dresden, Germany
| | - Jan-Christoph Deinert
- Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328, Dresden, Germany
| | - Olav Hellwig
- Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328, Dresden, Germany
- Institute of Physics, Chemnitz University of Technology, 09107, Chemnitz, Germany
| | - Jürgen Faßbender
- Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328, Dresden, Germany
- Institute of Solid State and Materials Physics, Technische Universität Dresden, 01062, Dresden, Germany
| | - Jürgen Lindner
- Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328, Dresden, Germany
| | - Ruslan Salikhov
- Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328, Dresden, Germany.
| | - Sergey Kovalev
- Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328, Dresden, Germany.
- Technische Universität Dortmund, 44227, Dortmund, Germany.
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5
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Li T, Liu L, Chen Z, Jia W, Ye J, Cai X, Huang D, Li W, Chen F, Li X, Chen J, Dong B, Xie H, Pan A, Zhi C, An H. Tuning Intrinsic Spin Hall Effect in Platinum/Ferrimagnetic Insulator Heterostructure in Moderately Dirty Regime. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2721. [PMID: 37836362 PMCID: PMC10574219 DOI: 10.3390/nano13192721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/14/2023] [Revised: 09/30/2023] [Accepted: 10/06/2023] [Indexed: 10/15/2023]
Abstract
Studying the mechanisms of the spin Hall effect (SHE) is essential for the fundamental understanding of spintronic physics. By now, despite the intensive studies of SHE on heavy metal (HM)/metallic magnet heterostructures, the SHE on HM/ferrimagnetic insulator (FMI) heterostructures still remains elusive. Here, we study the mechanism of SHE in the Pt/Tm3Fe5O12 (TmIG) heterostructure. We first tune the crystallinity and resistivity of Pt by an annealing method, and then study the spin-orbit torque (SOT) in the tuned-Pt/TmIG devices. The SOT generation efficiency per unit electric field and spin Hall angle were obtained, which are insensitive to the annealing temperature. We further demonstrate that the intrinsic contribution in the moderately dirty regime is responsible for the SHE in our Pt/TmIG bilayer. Our study provides an important piece of information for the SHE in FMI-based spintronic physics.
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Affiliation(s)
- Tianhui Li
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (T.L.); (L.L.); (Z.C.); (W.J.); (J.Y.); (X.C.); (W.L.); (F.C.); (X.L.); (B.D.); (H.X.)
| | - Lin Liu
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (T.L.); (L.L.); (Z.C.); (W.J.); (J.Y.); (X.C.); (W.L.); (F.C.); (X.L.); (B.D.); (H.X.)
| | - Zehan Chen
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (T.L.); (L.L.); (Z.C.); (W.J.); (J.Y.); (X.C.); (W.L.); (F.C.); (X.L.); (B.D.); (H.X.)
| | - Wei Jia
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (T.L.); (L.L.); (Z.C.); (W.J.); (J.Y.); (X.C.); (W.L.); (F.C.); (X.L.); (B.D.); (H.X.)
| | - Jianxin Ye
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (T.L.); (L.L.); (Z.C.); (W.J.); (J.Y.); (X.C.); (W.L.); (F.C.); (X.L.); (B.D.); (H.X.)
| | - Xudong Cai
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (T.L.); (L.L.); (Z.C.); (W.J.); (J.Y.); (X.C.); (W.L.); (F.C.); (X.L.); (B.D.); (H.X.)
| | - Doudou Huang
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China; (D.H.); (J.C.)
| | - Wanshan Li
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (T.L.); (L.L.); (Z.C.); (W.J.); (J.Y.); (X.C.); (W.L.); (F.C.); (X.L.); (B.D.); (H.X.)
| | - Fukang Chen
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (T.L.); (L.L.); (Z.C.); (W.J.); (J.Y.); (X.C.); (W.L.); (F.C.); (X.L.); (B.D.); (H.X.)
| | - Xinjun Li
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (T.L.); (L.L.); (Z.C.); (W.J.); (J.Y.); (X.C.); (W.L.); (F.C.); (X.L.); (B.D.); (H.X.)
| | - Jiahao Chen
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China; (D.H.); (J.C.)
| | - Boxi Dong
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (T.L.); (L.L.); (Z.C.); (W.J.); (J.Y.); (X.C.); (W.L.); (F.C.); (X.L.); (B.D.); (H.X.)
| | - Hang Xie
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (T.L.); (L.L.); (Z.C.); (W.J.); (J.Y.); (X.C.); (W.L.); (F.C.); (X.L.); (B.D.); (H.X.)
| | - Anyuan Pan
- Dealour Electric Co., Ltd., Jiaxing 314001, China;
| | - Chao Zhi
- Dealour Electric Co., Ltd., Jiaxing 314001, China;
| | - Hongyu An
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (T.L.); (L.L.); (Z.C.); (W.J.); (J.Y.); (X.C.); (W.L.); (F.C.); (X.L.); (B.D.); (H.X.)
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6
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Aoki M, Yin Y, Granville S, Zhang Y, Medhekar NV, Leiva L, Ohshima R, Ando Y, Shiraishi M. Gigantic Anisotropy of Self-Induced Spin-Orbit Torque in Weyl Ferromagnet Co 2MnGa. NANO LETTERS 2023; 23:6951-6957. [PMID: 37477708 DOI: 10.1021/acs.nanolett.3c01573] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/22/2023]
Abstract
Spin-orbit torque (SOT) is receiving tremendous attention from both fundamental and application-oriented aspects. Co2MnGa, a Weyl ferromagnet that is in a class of topological quantum materials, possesses cubic-based high structural symmetry, the L21 crystal ordering, which should be incapable of hosting anisotropic SOT in conventional understanding. Here we show the discovery of a gigantic anisotropy of self-induced SOT in Co2MnGa. The magnitude of the SOT is comparable to that of heavy metal/ferromagnet bilayer systems, despite the high inversion symmetry of the Co2MnGa structure. More surprisingly, a sign inversion of the self-induced SOT is observed for different crystal axes. This finding stems from the interplay of the topological nature of the electronic states and their strong modulation by external strain. Our research enriches the understanding of the physics of self-induced SOT and demonstrates a versatile method for tuning SOT efficiencies in a wide range of materials for topological and spintronic devices.
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Affiliation(s)
- Motomi Aoki
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
- Center for Spintronics Research Network, Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-011, Japan
| | - Yuefeng Yin
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Future Low Energy Electronics Technologies, Clayton, Victoria 3800, Australia
| | - Simon Granville
- Robinson Research Institute, Victoria University of Wellington, Wellington 6140, New Zealand
- The MacDiarmid Institute for Advanced Materials and Nanotechnology, Wellington 6011, New Zealand
| | - Yao Zhang
- Robinson Research Institute, Victoria University of Wellington, Wellington 6140, New Zealand
- The MacDiarmid Institute for Advanced Materials and Nanotechnology, Wellington 6011, New Zealand
| | - Nikhil V Medhekar
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Future Low Energy Electronics Technologies, Clayton, Victoria 3800, Australia
| | - Livio Leiva
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
| | - Ryo Ohshima
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
- Center for Spintronics Research Network, Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-011, Japan
| | - Yuichiro Ando
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
- Center for Spintronics Research Network, Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-011, Japan
- PRESTO, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332-0012, Japan
| | - Masashi Shiraishi
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
- Center for Spintronics Research Network, Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-011, Japan
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7
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Piatti E, Guglielmero L, Tofani G, Mezzetta A, Guazzelli L, D'Andrea F, Roddaro S, Pomelli CS. Ionic liquids for electrochemical applications: Correlation between molecular structure and electrochemical stability window. J Mol Liq 2022. [DOI: 10.1016/j.molliq.2022.120001] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/16/2022]
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8
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Xu S, Dai B, Cheng H, Tai L, Lang L, Sun Y, Shi Z, Wang KL, Zhao W. Electric-Field Control of Spin Diffusion Length and Electric-Assisted D'yakonov-Perel' Mechanism in Ultrathin Heavy Metal and Ferromagnetic Insulator Heterostructure. MATERIALS (BASEL, SWITZERLAND) 2022; 15:6368. [PMID: 36143680 PMCID: PMC9501297 DOI: 10.3390/ma15186368] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Revised: 09/07/2022] [Accepted: 09/08/2022] [Indexed: 06/16/2023]
Abstract
Electric-field control of spin dynamics is significant for spintronic device applications. Thus far, effectively electric-field control of magnetic order, magnetic damping factor and spin-orbit torque (SOT) has been studied in magnetic materials, but the electric field control of spin relaxation still remains unexplored. Here, we use ionic liquid gating to control spin-related property in the ultra-thin (4 nm) heavy metal (HM) platinum (Pt) and ferromagnetic insulator (FMI) yttrium iron garnet (Y3Fe5O12, YIG) heterostructure. It is found that the anomalous Hall effect (AHE), spin relaxation time and spin diffusion length can be effectively controlled by the electric field. The anomalous Hall resistance is almost twice as large as at 0 voltage after applying a small voltage of 5.5 V. The spin relaxation time can vary by more than 50 percent with the electric field, from 41.6 to 64.5 fs. In addition, spin relaxation time at different gate voltage follows the reciprocal law of the electron momentum scattering time, which indicates that the D'yakonov-Perel' mechanism is dominant in the Pt/YIG system. Furthermore, the spin diffusion length can be effectively controlled by an ionic gate, which can be well explained by voltage-modulated interfacial spin scattering. These results help us to improve the interface spin transport properties in magnetic materials, with great contributions to the exploration of new physical mechanisms and spintronics device.
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Affiliation(s)
- Shijie Xu
- Fert Beijing Institute, Ministry of Industry and Information Technology Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA 90095, USA
- Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
- Hefei Innovation Research Institute, Anhui High Reliability Chips Engineering Laboratory, Beihang University, Hefei 230013, China
| | - Bingqian Dai
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA 90095, USA
| | - Houyi Cheng
- Fert Beijing Institute, Ministry of Industry and Information Technology Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- Hefei Innovation Research Institute, Anhui High Reliability Chips Engineering Laboratory, Beihang University, Hefei 230013, China
| | - Lixuan Tai
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA 90095, USA
| | - Lili Lang
- Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Yadong Sun
- Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Zhong Shi
- Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Kang L. Wang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA 90095, USA
| | - Weisheng Zhao
- Fert Beijing Institute, Ministry of Industry and Information Technology Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- Hefei Innovation Research Institute, Anhui High Reliability Chips Engineering Laboratory, Beihang University, Hefei 230013, China
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9
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Xu X, Zhang L, Zou L, Li M, Wang H. Regulating Interfacial Spin Hall Conductivity with Ferroelectricity. J Phys Chem Lett 2022; 13:3310-3316. [PMID: 35389645 DOI: 10.1021/acs.jpclett.2c00616] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We report a new physical phenomenon of active and enhanced control of the spin Hall conductivity (SHC) in a family of metal-ferroelectric multilayers. Rather than the direction of the built-in electric field, such ferroelectric regulation of SHC originates from the drastic change of the interfacial electronic state along with its intrinsic Berry phase near the Fermi level due to the distinct hybridization between the metal film and substrate when the ferroelectric polarization reverses. Using Pt/PbZrTiO3 multilayers as a representative model, we demonstrate the controllability of a large magnitude and even the sign of SHC in the Pt film at the two interfaces with an antitype conducting carrier in a ferroelectric substrate. The interfacial Rashba effect plays a role in contributing to the change of SHC through spin-projected band analysis. The present work makes a fundamental theoretical discovery and opens up a new direction to manipulate spin-charge conversion of thin-film layered structures by ferroelectricity, which is crucial for designing future electric and spintronic devices.
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Affiliation(s)
- Xiong Xu
- School of Physics and Electronics, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
| | - Long Zhang
- School of Physics and Electronics, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
| | - Lin Zou
- School of Physics and Electronics, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
| | - Min Li
- School of Physics and Electronics, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
| | - Hui Wang
- School of Physics and Electronics, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
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10
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Ohshima R, Kohsaka Y, Ando Y, Shinjo T, Shiraishi M. Modulation of spin-torque ferromagnetic resonance with a nanometer-thick platinum by ionic gating. Sci Rep 2021; 11:21779. [PMID: 34741124 PMCID: PMC8571418 DOI: 10.1038/s41598-021-01310-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/27/2021] [Accepted: 10/26/2021] [Indexed: 11/09/2022] Open
Abstract
The spin Hall effect (SHE) and inverse spin Hall effect (ISHE) have played central roles in modern condensed matter physics especially in spintronics and spin-orbitronics, and much effort has been paid to fundamental and application-oriented research towards the discovery of novel spin-orbit physics and the creation of novel spintronic devices. However, studies on gate-tunability of such spintronics devices have been limited, because most of them are made of metallic materials, where the high bulk carrier densities hinder the tuning of physical properties by gating. Here, we show an experimental demonstration of the gate-tunable spin-orbit torque in Pt/Ni80Fe20 (Py) devices by controlling the SHE using nanometer-thick Pt with low carrier densities and ionic gating. The Gilbert damping parameter of Py and the spin-memory loss at the Pt/Py interface were modulated by ionic gating to Pt, which are compelling results for the successful tuning of spin-orbit interaction in Pt.
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Affiliation(s)
- Ryo Ohshima
- Department of Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto, 615-8510, Japan.
| | - Yuto Kohsaka
- Department of Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto, 615-8510, Japan
| | - Yuichiro Ando
- Department of Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto, 615-8510, Japan
| | - Teruya Shinjo
- Department of Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto, 615-8510, Japan
| | - Masashi Shiraishi
- Department of Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto, 615-8510, Japan.
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11
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Lee S, Koike H, Goto M, Miwa S, Suzuki Y, Yamashita N, Ohshima R, Shigematsu E, Ando Y, Shiraishi M. Synthetic Rashba spin-orbit system using a silicon metal-oxide semiconductor. NATURE MATERIALS 2021; 20:1228-1232. [PMID: 34083776 DOI: 10.1038/s41563-021-01026-y] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2020] [Accepted: 04/27/2021] [Indexed: 06/12/2023]
Abstract
The spin-orbit interaction (SOI), mainly manifesting itself in heavy elements and compound materials, has been attracting much attention as a means of manipulating and/or converting a spin degree of freedom. Here, we show that a Si metal-oxide- semiconductor (MOS) heterostructure possesses Rashba-type SOI, although Si is a light element and has lattice inversion symmetry resulting in inherently negligible SOI in bulk form. When a strong gate electric field is applied to the Si MOS, we observe spin lifetime anisotropy of propagating spins in the Si through the formation of an emergent effective magnetic field due to the SOI. Furthermore, the Rashba parameter α in the system increases linearly up to 9.8 × 10-16 eV m for a gate electric field of 0.5 V nm-1; that is, it is gate tuneable and the spin splitting of 0.6 μeV is relatively large. Our finding establishes a family of spin-orbit systems.
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Affiliation(s)
- Soobeom Lee
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto, Japan
| | - Hayato Koike
- Advanced Products Development Center, TDK Corporation, Ichikawa, Chiba, Japan
| | - Minori Goto
- Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
| | - Shinji Miwa
- Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba, Japan
| | - Yoshishige Suzuki
- Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
| | - Naoto Yamashita
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto, Japan
| | - Ryo Ohshima
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto, Japan
| | - Ei Shigematsu
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto, Japan
| | - Yuichiro Ando
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto, Japan
- PRESTO, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama, Japan
| | - Masashi Shiraishi
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto, Japan.
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12
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Alotibi S, Hickey BJ, Teobaldi G, Ali M, Barker J, Poli E, O'Regan DD, Ramasse Q, Burnell G, Patchett J, Ciccarelli C, Alyami M, Moorsom T, Cespedes O. Enhanced Spin-Orbit Coupling in Heavy Metals via Molecular Coupling. ACS APPLIED MATERIALS & INTERFACES 2021; 13:5228-5234. [PMID: 33470108 DOI: 10.1021/acsami.0c19403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
5d metals are used in electronics because of their high spin-orbit coupling (SOC) leading to efficient spin-electric conversion. When C60 is grown on a metal, the electronic structure is altered due to hybridization and charge transfer. In this work, we measure the spin Hall magnetoresistance for Pt/C60 and Ta/C60, finding that they are up to a factor of 6 higher than those for pristine metals, indicating a 20-60% increase in the spin Hall angle. At low fields of 1-30 mT, the presence of C60 increased the anisotropic magnetoresistance by up to 700%. Our measurements are supported by noncollinear density functional theory calculations, which predict a significant SOC enhancement by C60 that penetrates through the Pt layer, concomitant with trends in the magnetic moment of transport electrons acquired via SOC and symmetry breaking. The charge transfer and hybridization between the metal and C60 can be controlled by gating, so our results indicate the possibility of dynamically modifying the SOC of thin metals using molecular layers. This could be exploited in spin-transfer torque memories and pure spin current circuits.
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Affiliation(s)
- Satam Alotibi
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
| | - Bryan J Hickey
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
| | - Gilberto Teobaldi
- Scientific Computing Department, Science and Technology Facilities Council, Didcot OX11 0QX, U.K
- Beijing Computational Science Research Center, Beijing 100193, China
- Stephenson Institute for Renewable Energy, Department of Chemistry, University of Liverpool, Liverpool L69 3BX, U.K
- School of Chemistry, University of Southampton, Highfield, Southampton SO17 1BJ, U.K
| | - Mannan Ali
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
| | - Joseph Barker
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
| | - Emiliano Poli
- Scientific Computing Department, Science and Technology Facilities Council, Didcot OX11 0QX, U.K
| | - David D O'Regan
- School of Physics, Trinity College Dublin, The University of Dublin, Dublin 2, Ireland
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and the SFI Advanced Materials and Bio-Engineering Research Centre (AMBER), Dublin 2, Ireland
| | - Quentin Ramasse
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
- SuperSTEM, SciTech Daresbury Science and Innovation Campus, Keckwick Lane, Daresbury WA4 4AD, U.K
| | - Gavin Burnell
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
| | - James Patchett
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K
| | - Chiara Ciccarelli
- SuperSTEM, SciTech Daresbury Science and Innovation Campus, Keckwick Lane, Daresbury WA4 4AD, U.K
| | - Mohammed Alyami
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
| | - Timothy Moorsom
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
| | - Oscar Cespedes
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
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13
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Abstract
To explore the further possibilities of nanometer-thick ferromagnetic films (ultrathin ferromagnetic films), we investigated the ferromagnetic resonance (FMR) of 1 nm-thick Co film. Whilst an FMR signal was not observed for the Co film grown on a SiO2 substrate, the insertion of a 3 nm-thick amorphous Ta buffer layer beneath the Co enabled the detection of a salient FMR signal, which was attributed to the smooth surface of the amorphous Ta. This result implies the excitation of FMR in an ultrathin ferromagnetic film, which can pave the way to controlling magnons in ultrathin ferromagnetic films.
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14
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Fang M, Wang Y, Wang H, Hou Y, Vetter E, Kou Y, Yang W, Yin L, Xiao Z, Li Z, Jiang L, Lee HN, Zhang S, Wu R, Xu X, Sun D, Shen J. Tuning the interfacial spin-orbit coupling with ferroelectricity. Nat Commun 2020; 11:2627. [PMID: 32457302 PMCID: PMC7250895 DOI: 10.1038/s41467-020-16401-7] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2019] [Accepted: 04/28/2020] [Indexed: 11/26/2022] Open
Abstract
Detection and manipulation of spin current lie in the core of spintronics. Here we report an active control of a net spin Hall angle, θSHE(net), in Pt at an interface with a ferroelectric material PZT (PbZr0.2Ti0.8O3), using its ferroelectric polarization. The spin Hall angle in the ultra-thin Pt layer is measured using the inverse spin Hall effect with a pulsed tunneling current from a ferromagnetic La0.67Sr0.33MnO3 electrode. The effect of the ferroelectric polarization on θSHE(net) is enhanced when the thickness of the Pt layer is reduced. When the Pt layer is thinner than 6 nm, switching the ferroelectric polarization even changes the sign of θSHE(net). This is attributed to the reversed polarity of the spin Hall angle in the 1st-layer Pt at the PZT/Pt interface when the ferroelectric polarization is inverted, as supported by the first-principles calculations. These findings suggest a route for designing future energy efficient spin-orbitronic devices using ferroelectric control. The spin Hall angle (SHA) is a measure of the efficiency for converting a charge to a spin current is still challenging to tune in situ. Here, the authors demonstrate by introducing a ferroelectric (FE) material in a ferromagnetic/heavy metal stack the SHA can be voltage controled via the polarization of the FE layer.
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Affiliation(s)
- Mei Fang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China.,Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 410083, Changsha, Hunan, China
| | - Yanmei Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Hui Wang
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 410083, Changsha, Hunan, China.,Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Yusheng Hou
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Eric Vetter
- Department of Physics, North Carolina State University, Raleigh, NC, 27695, USA.,Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Yunfang Kou
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Wenting Yang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Lifeng Yin
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China.,Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, 200433, Shanghai, China.,Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China
| | - Zhu Xiao
- School of Materials Science and Engineering, Central South University, 410083, Changsha, Hunan, China
| | - Zhou Li
- School of Materials Science and Engineering, Central South University, 410083, Changsha, Hunan, China
| | - Lu Jiang
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Ho Nyung Lee
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Shufeng Zhang
- Department of Physics, University of Arizona, Tucson, AZ, 85721, USA
| | - Ruqian Wu
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Xiaoshan Xu
- Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588, USA.
| | - Dali Sun
- Department of Physics, North Carolina State University, Raleigh, NC, 27695, USA. .,Organic and Carbon Electronics Lab (ORaCEL), North Carolina State University, Raleigh, NC, 27695, USA.
| | - Jian Shen
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China. .,Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, 200433, Shanghai, China. .,Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China.
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15
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Safi TS, Zhang P, Fan Y, Guo Z, Han J, Rosenberg ER, Ross C, Tserkovnyak Y, Liu L. Variable spin-charge conversion across metal-insulator transition. Nat Commun 2020; 11:476. [PMID: 31980644 PMCID: PMC6981235 DOI: 10.1038/s41467-020-14388-9] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2019] [Accepted: 12/18/2019] [Indexed: 11/12/2022] Open
Abstract
The charge-to-spin conversion efficiency is a crucial parameter in determining the performance of many useful spintronic materials. Usually, this conversion efficiency is predetermined by the intrinsic nature of solid-state materials, which cannot be easily modified without invoking chemical or structural changes in the underlying system. Here we report on successful modulation of charge-spin conversion efficiency via the metal-insulator transition in a quintessential strongly correlated electron compound vanadium dioxide (VO2). By employing ferromagnetic resonance driven spin pumping and the inverse spin Hall effect measurement, we find a dramatic change in the spin pumping signal (decrease by > 80%) and charge-spin conversion efficiency (increase by five times) upon insulator to metal transition. The abrupt change in the structural and electrical properties of this material therefore provides useful insights on the spin related physics in a strongly correlated material undergoing a phase transition. The interconversion of spin and charge is fundamental to the operation of spintronic devices. Here the authors demonstrate spin-to-charge conversion in the correlated material vanadium dioxide, and show that the efficiency changes dramatically across the metal-insulator transition.
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Affiliation(s)
- Taqiyyah S Safi
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Pengxiang Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Yabin Fan
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Zhongxun Guo
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jiahao Han
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Ethan R Rosenberg
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Caroline Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Yaraslov Tserkovnyak
- Department of Physics and Astronomy, University of California, Los Angeles, CA, 90095, USA
| | - Luqiao Liu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
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16
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Shao DF, Gurung G, Zhang SH, Tsymbal EY. Dirac Nodal Line Metal for Topological Antiferromagnetic Spintronics. PHYSICAL REVIEW LETTERS 2019; 122:077203. [PMID: 30848649 DOI: 10.1103/physrevlett.122.077203] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2018] [Indexed: 06/09/2023]
Abstract
Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which exploits the Néel vector to control the topological electronic states and the associated spin-dependent transport properties. A recently discovered Néel spin-orbit torque has been proposed to electrically manipulate Dirac band crossings in antiferromagnets; however, a reliable AFM material to realize these properties in practice is missing. In this Letter, we predict that room-temperature AFM metal MnPd_{2} allows the electrical control of the Dirac nodal line by the Néel spin-orbit torque. Based on first-principles density functional theory calculations, we show that reorientation of the Néel vector leads to switching between the symmetry-protected degenerate state and the gapped state associated with the dispersive Dirac nodal line at the Fermi energy. The calculated spin Hall conductivity strongly depends on the Néel vector orientation and can be used to experimentally detect the predicted effect using a proposed spin-orbit torque device. Our results indicate that AFM Dirac nodal line metal MnPd_{2} represents a promising material for topological AFM spintronics.
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Affiliation(s)
- Ding-Fu Shao
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, USA
| | - Gautam Gurung
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, USA
| | - Shu-Hui Zhang
- College of Science, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, USA
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