Closed-loop control of a GaAs-based singlet-triplet spin qubit with 99.5% gate fidelity and low leakage

Real-time two-axis control of a spin qubit

Optimal control of qubits requires the ability to adapt continuously to their ever-changing environment. We demonstrate a real-time control protocol for a two-electron singlet-triplet qubit with two fluctuating Hamiltonian parameters. Our approach leverages single-shot readout classification and dynamic waveform generation, allowing full Hamiltonian estimation to dynamically stabilize and optimize the qubit performance. Powered by a field-programmable gate array (FPGA), the quantum control electronics estimates the Overhauser field gradient between the two electrons in real time, enabling controlled Overhauser-driven spin rotations and thus bypassing the need for micromagnets or nuclear polarization protocols. It also estimates the exchange interaction between the two electrons and adjusts their detuning, resulting in extended coherence of Hadamard rotations when correcting for fluctuations of both qubit axes. Our study highlights the role of feedback in enhancing the performance and stability of quantum devices affected by quasistatic noise.

Simultaneous single-qubit driving of semiconductor spin qubits at the fault-tolerant threshold

Practical Quantum computing hinges on the ability to control large numbers of qubits with high fidelity. Quantum dots define a promising platform due to their compatibility with semiconductor manufacturing. Moreover, high-fidelity operations above 99.9% have been realized with individual qubits, though their performance has been limited to 98.67% when driving two qubits simultaneously. Here we present single-qubit randomized benchmarking in a two-dimensional array of spin qubits, finding native gate fidelities as high as 99.992(1)%. Furthermore, we benchmark single qubit gate performance while simultaneously driving two and four qubits, utilizing a novel benchmarking technique called N-copy randomized benchmarking, designed for simple experimental implementation and accurate simultaneous gate fidelity estimation. We find two- and four-copy randomized benchmarking fidelities of 99.905(8)% and 99.34(4)% respectively, and that next-nearest neighbor pairs are highly robust to cross-talk errors. These characterizations of single-qubit gate quality are crucial for scaling up quantum information technology.

99.92%-Fidelity cnot Gates in Solids by Noise Filtering

Inevitable interactions with the reservoir largely degrade the performance of entangling gates, which hinders practical quantum computation from coming into existence. Here, we experimentally demonstrate a 99.920(7)%-fidelity controlled-not gate by suppressing the complicated noise in a solid-state spin system at room temperature. We found that the fidelity limited at 99% in previous works results from considering only static classical noise, and, thus, in this work, a complete noise model is constructed by also considering the time dependence and the quantum nature of the spin bath. All noises in the model are dynamically corrected by an exquisitely designed shaped pulse, giving the resulting error below 10^{-4}. The residual gate error is mainly originated from the longitudinal relaxation and the waveform distortion that can both be further reduced technically. Our noise-resistant method is universal and will benefit other solid-state spin systems.

Parametric longitudinal coupling between a high-impedance superconducting resonator and a semiconductor quantum dot singlet-triplet spin qubit

Coupling qubits to a superconducting resonator provides a mechanism to enable long-distance entangling operations in a quantum computer based on spins in semiconducting materials. Here, we demonstrate a controllable spin-photon coupling based on a longitudinal interaction between a spin qubit and a resonator. We show that coupling a singlet-triplet qubit to a high-impedance superconducting resonator can produce the desired longitudinal coupling when the qubit is driven near the resonator's frequency. We measure the energy splitting of the qubit as a function of the drive amplitude and frequency of a microwave signal applied near the resonator antinode, revealing pronounced effects close to the resonator frequency due to longitudinal coupling. By tuning the amplitude of the drive, we reach a regime with longitudinal coupling exceeding 1 MHz. This mechanism for qubit-resonator coupling represents a stepping stone towards producing high-fidelity two-qubit gates mediated by a superconducting resonator.

Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations

Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving high-fidelity single- and two-qubit gates in these devices. In this work, we measure the charge-noise spectrum of a Si/SiGe singlet-triplet qubit over nearly 12 decades in frequency using a combination of methods, including dynamically-decoupled exchange oscillations with up to 512 π pulses during the qubit evolution. The charge noise is colored across the entire frequency range of our measurements, although the spectral exponent changes with frequency. Moreover, the charge-noise spectrum inferred from conductance measurements of a proximal sensor quantum dot agrees with that inferred from coherent oscillations of the singlet-triplet qubit, suggesting that simple transport measurements can accurately characterize the charge noise over a wide frequency range in Si/SiGe quantum dots.

Charge noise is a major limitation to achieving high-fidelity quantum gate performance with semiconductor qubits. Here the authors report the results of charge noise spectroscopy for electron spin qubits in silicon quantum dots, spanning nearly twelve decades in frequency.

A silicon singlet-triplet qubit driven by spin-valley coupling

Spin–orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here, we demonstrate a singlet–triplet qubit operating mode that can drive qubit evolution at frequencies in excess of 200 MHz. This approach offers a means to electrically turn on and off fast control, while providing high logic gate orthogonality and long qubit dephasing times. We utilize this operational mode for dynamical decoupling experiments to probe the charge noise power spectrum in a silicon metal-oxide-semiconductor double quantum dot. In addition, we assess qubit frequency drift over longer timescales to capture low-frequency noise. We present the charge noise power spectral density up to 3 MHz, which exhibits a 1/f^α dependence consistent with α ~ 0.7, over 9 orders of magnitude in noise frequency.

Spin-orbit coupling in gate-defined quantum dots in silicon metal-oxide semiconductors provides a promising route for electrical control of spin qubits. Here, the authors demonstrate that intervalley spin–orbit interaction enables fast singlet–triplet qubit rotations in this platform, at frequencies exceeding 200MHz.

A singlet-triplet hole spin qubit in planar Ge

Spin qubits are considered to be among the most promising candidates for building a quantum processor. Group IV hole spin qubits are particularly interesting owing to their ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here, we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled g-factor difference-driven and exchange-driven rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1 μs, which we extend beyond 150 μs using echo techniques. These results demonstrate that Ge hole singlet-triplet qubits are competing with state-of-the-art GaAs and Si singlet-triplet qubits. In addition, their rotation frequencies and coherence are comparable with those of Ge single spin qubits, but singlet-triplet qubits can be operated at much lower fields, emphasizing their potential for on-chip integration with superconducting technologies.

Controllable freezing of the nuclear spin bath in a single-atom spin qubit

The quantum coherence and gate fidelity of electron spin qubits in semiconductors are often limited by nuclear spin fluctuations. Enrichment of spin-zero isotopes in silicon markedly improves the dephasing time [Formula: see text], which, unexpectedly, can extend two orders of magnitude beyond theoretical expectations. Using a single-atom ³¹P qubit in enriched ²⁸Si, we show that the abnormally long [Formula: see text] is due to the freezing of the dynamics of the residual ²⁹Si nuclei, caused by the electron-nuclear hyperfine interaction. Inserting a waiting period when the electron is controllably removed unfreezes the nuclear dynamics and restores the ergodic [Formula: see text] value. Our conclusions are supported by a nearly parameter-free modeling of the ²⁹Si nuclear spin dynamics, which reveals the degree of backaction provided by the electron spin. This study clarifies the limits of ergodic assumptions in nuclear bath dynamics and provides previously unidentified strategies for maximizing coherence and gate fidelity of spin qubits in semiconductors.

Quantifying error and leakage in an encoded Si/SiGe triple-dot qubit

Quantum computation requires qubits that satisfy often-conflicting criteria, which include long-lasting coherence and scalable control¹. One approach to creating a suitable qubit is to operate in an encoded subspace of several physical qubits. Although such encoded qubits may be particularly susceptible to leakage out of their computational subspace, they can be insensitive to certain noise processes^2,3 and can also allow logical control with a single type of entangling interaction⁴ while maintaining favourable features of the underlying physical system. Here we demonstrate high-fidelity operation of an exchange-only qubit encoded in a subsystem of three coupled electron spins⁵ confined in gated, isotopically enhanced silicon quantum dots⁶. This encoding requires neither high-frequency electric nor magnetic fields for control, and instead relies exclusively on the exchange interaction^4,5, which is highly local and can be modulated with a large on-off ratio using only fast voltage pulses. It is also compatible with very low and gradient-free magnetic field environments, which simplifies integration with superconducting materials. We developed and employed a modified blind randomized benchmarking protocol that determines both computational and leakage errors^7,8, and found that unitary operations have an average total error of 0.35%, with half of that, 0.17%, coming from leakage driven by interactions with substrate nuclear spins. The combination of this proven performance with complete control via gate voltages makes the exchange-only qubit especially attractive for use in many-qubit systems.