The scaling laws of edge vs. bulk interlayer conduction in mesoscale twisted graphitic interfaces

Large and Pressure-Dependent c-Axis Piezoresistivity of Highly Oriented Pyrolytic Graphite near Zero Pressure

The c-axis piezoresistivity is a fundamental and important parameter of graphite, but its value near zero pressure has not been well determined. Herein, a new method for studying the c-axis piezoresistivity of van der Waals materials near zero pressure is developed on the basis of in situ scanning electron microscopy and finite element simulation. The c-axis piezoresistivity of microscale highly oriented pyrolytic graphite (HOPG) is found to show a large value of 5.68 × 10-5 kPa-1 near zero pressure and decreases by 2 orders of magnitude to the established value of ∼10-7 kPa-1 when the pressure increases to 200 MPa. By modulating the serial tunneling barrier model on the basis of the stacking faults, we describe the c-axis electrical transport of HOPG under compression. The large c-axis piezoresistivity near zero pressure and its large decrease in magnitude with pressure are attributed to the rapid stiffening of the electromechanical properties under compression.

Ultrahigh Critical Current Density across Sliding Electrical Contacts in Structural Superlubric State

In conventional sliding electrical contacts (SECs), large critical current density (CCD) requires a high ratio between actual and apparent contact area, while low friction and wear require the opposites. Structural superlubricity (SSL) has the characteristics of zero wear, near zero friction, and all-atoms in real contact between the contacting surfaces. Here, we show a measured current density up to 17.5  GA/m^{2} between microscale graphite contact surfaces while sliding under ambient conditions. This value is nearly 146 times higher than the maximum CCD of other SECs reported in literatures (0.12  GA/m^{2}). Meanwhile, the coefficient of friction for the graphite contact is less than 0.01 and the sliding interface is wear-free according to the Raman characterization, indicating the presence of the SSL state. Furthermore, we estimate the intrinsic CCD of single crystalline graphite to be 6.69  GA/m^{2} by measuring the scaling relation of CCD. Theoretical analysis reveals that the CCD is limited by thermal effect due to the Joule heat. Our results show the great potential of the SSL contacts to be used as SECs, such as micro- or nanocontact switches, conductive slip rings, or pantographs.

In Situ Twistronics: A New Platform Based on Superlubricity

Twistronics, an emerging field focused on exploring the unique electrical properties induced by twist interface in graphene multilayers, has garnered significant attention in recent years. The general manipulation of twist angle depends on the assembly of van der Waals (vdW) layered materials, which has led to the discovery of unconventional superconductivity, ferroelectricity, and nonlinear optics, thereby expanding the realm of twistronics. Recently, in situ tuning of interlayer conductivity in vdW layered materials has been achieved based on scanning probe microscope. In this Perspective, the advancements in in situ twistronics are focused on by reviewing the state-of-the-art in situ manipulating technology, discussing the underlying mechanism based on the concept of structural superlubricity, and exploiting the real-time twistronic tests under scanning electron microscope (SEM). It is shown that the real-time manipulation under SEM allows for visualizing and monitoring the interface status during in situ twistronic testing. By harnessing the unique tribological properties of vdW layered materials, this novel platform not only enhances the fabrication of twistronic devices but also facilitates the fundamental understanding of interface phenomena in vdW layered materials. Moreover, this platform holds great promise for the application of twistronic-mechanical systems, providing avenues for the integration of twistronics into various mechanical frameworks.

Edge State Quantum Interference in Twisted Graphitic Interfaces

Zigzag edges in graphitic systems exhibit localized electronic states that drastically affect their properties. Here, room-temperature charge transport experiments across a single graphitic interface are reported, in which the interlayer current is confined to the contact edges. It is shown that the current exhibits pronounced oscillations of up to ≈40 µA with a dominant period of ≈5 Å with respect to lateral displacement that do not directly correspond to typical graphene lattice spacing. The origin of these features is computationally rationalized as quantum mechanical interference of localized edge states showing significant amplitude and interlayer coupling variations as a function of the interface stacking configuration. Such interference effects may therefore dominate the transport properties of low-dimensional graphitic interfaces.

Twisted graphene stabilized by organic linkers pillaring

Twisted graphene, including magic angle graphene, has attracted extensive attentions for its novel properties recently. However, twisted graphene is intrinsically unstable and this will obstruct their application in practice, especially for twisted nano graphene. The twist angles between adjacent layers will change spontaneously. This relaxation process will be accelerated under heat and strain. To solve this problem, we propose a strategy of pillaring twisted graphene by organic linkers in theory. The necessity and feasibility of this strategy is proved by numerical calculation.

Interlayer electron flow and field shielding in twisted trilayer graphene quantum dots

While multilayer graphene (MLG) possesses excellent intralayer electron mobility, its interlayer electrical conductance exhibits great diversity that results in exotic phenomena and various applications in electronic devices. Driven by a vertical electric field, electron flow occurs across the layers, and its current is tunable by controlling the interlayer stacking and distance, disc size and field strength. The electron rearrangement induced by the external field is appropriately described by the polarizability that measures the electronic response against the applied field. Based on the field-induced electron density variations computed with a first-principles approach, a polarizability decomposition scheme is developed in this work to isolate the inter- and intra-layer contributions from the total polarizability of twisted trilayer graphene (TTG) quantum dots. The inter- and intra-layer counterparts reflect the charge transfer (CT) and field shielding effects among the layers, respectively. Shielded by the top and bottom layers, the middle layer is particularly effective in bridging, switching and promoting the interlayer electron flow. Large CT and shielding effects occur not only in the strongly coupled Bernal stacking, but also in the structures misorientating from the full-AAA stacking by a small twist angle. Moreover, both effects vary with the twist angle and disc size, indicating a controllable conductive/dielectric conversion in the vertical direction. In light of inter- and intralayer polarizability, our study addresses the precise modulation of interlayer conductance for TTG quantum dots, which is required in the microstructure design and performance manipulation of MLG-based electronic devices.