Half-Heusler-like compounds with wide continuous compositions and tunable p- to n-type semiconducting thermoelectrics

Stabilization of 19-Electron Half-Heuslers: Vacancy Filling as a Pathway Toward Robust Thermoelectric Semiconductors

The simple electron counting rule is widely used to predict the phase stability and fundamental physical characteristics of Heusler alloys, while its effectiveness in facilitating the discovery of new Heusler compounds, particularly the critically needed Heusler semiconductors, is substantially limited. In this work, a vacancy-filling strategy based on the Zintl chemistry principles is developed to stabilize 19-electron half-Heusler alloys as stable thermoelectric semiconductors. Experimental results reveal that the partial filling of Fe into the 4d vacant sites of the unstable 19-electron half-Heusler alloys, such as TiNiSb, NbCoSb, and ZrNiBi, results in the formation of stable semiconductors TiNiFe0.5Sb, NbCoFe0.5Sb, and ZrNiFe0.5Bi with bandgaps of 0.15, 0.16, and 0.14 eV, respectively. Notably, TiNiFe0.5Sb achieves a thermoelectric figure of merit (zT) of 0.43 at 973 K, demonstrating its potential for thermoelectric applications. This study expands the design landscape of Heusler alloys and presents a promising pathway for the development of high-performance thermoelectric materials.

Optimization mechanism of laminated ceramic package structure on the regulation of semiconductor cooling performance

The refrigeration performance of semiconductor refrigeration devices is limited by, among other things, the thermal conductivity of the materials. Optimisation of ceramic materials for semiconductor packaging offers the possibility of improving system performance. In this paper, a mathematical model of the semiconductor refrigeration process is established using the cooling capacity and the cooling coefficient as evaluation indexes. It investigates the effects of current, cold end temperature and hot end temperature on the cooling performance. A simulation model of laminated encapsulated materials is proposed to investigate the influence of the structure of encapsulated ceramic materials on the condensation effect. The results show that a small increase in current significantly increases the cooling capacity at low cold-end temperatures, while this effect diminishes at higher cold-end temperatures. An increase in the hot end temperature decreases the cooling capacity and coefficient, with the decrease being more pronounced at higher currents. In addition, as the thermal conductivity of the encapsulated ceramic material decreases along the direction perpendicular to the ceramic structure, heat transfer is directed more effectively, resulting in improved cooling efficiency and condensation. These findings provide new insights into the design of ceramic materials and optimisation of the efficiency of semiconductor cooling systems.

Strategic Design and Mechanistic Understanding of Vacancy-Filling Heusler Thermoelectric Semiconductors

Doping narrow-gap semiconductors is a well-established approach for designing efficient thermoelectric materials. Semiconducting half-Heusler (HH) and full-Heusler (FH) compounds have garnered significant interest within the thermoelectric field, yet the number of exceptional candidates remains relatively small. It is recently shown that the vacancy-filling approach is a viable strategy for expanding the Heusler family. Here, a range of near-semiconducting Heuslers, TiFexCuySb, creating a composition continuum that adheres to the Slater-Pauling electron counting rule are theoretically designed and experimentally synthesized. The stochastic and incomplete occupation of vacancy sites within these materials imparts continuously changing electrical conductivities, ranging from a good semiconductor with low carrier concentration in the endpoint TiFe0.67Cu0.33Sb to a heavily doped p-type semiconductor with a stoichiometry of TiFe1.00Cu0.20Sb. The optimal thermoelectric performance is experimentally observed in the intermediate compound TiFe0.80Cu0.28Sb, achieving a peak figure of merit of 0.87 at 923 K. These findings demonstrate that vacancy-filling Heusler compounds offer substantial opportunities for developing advanced thermoelectric materials.

Excellent thermoelectric performance in alkali metal phosphides M3P (M = Na and K) with phonon-glass electron-crystal like behaviour

Identifying ideal thermoelectric materials presents a formidable challenge due to the intricate coupling relationship between thermal conductivity and power factor. Here, based on first-principles calculations, along with self-consistent phonon theory and the Boltzmann transport equation, we theoretically investigate the thermoelectric properties of alkali metal phosphides M3P (M = Na and K). The evident 'avoided crossing' phenomenon indicates the phonon glass behavior of M3P (M = Na and K). Due to the strong lattice anharmonicity induced by alkali metal elements, accounting for quartic anharmonic corrections, the lattice thermal conductivities of Na3P and K3P at room temperature are merely 0.25 and 0.12 W m-1 K-1, respectively. Furthermore, the high degeneracy and 'pudding-mold-type' band structure lead to high p-type PF in M3P (M = Na and K). At 300 K, the p-type power factors (PF) of Na3P and K3P can reach 3.90 and 0.80 mW mK-2, respectively. The combination of ultralow κL and high PF leads to excellent thermoelectric figure of merit (ZT) values of 1.70 (3.38) and 1.18 (2.13) for p-type Na3P and K3P under optimal doping concentration at 300 K (500 K), respectively, surpassing traditional thermoelectric materials. These findings demonstrate that M3P (M = Na and K) exhibits behavior similar to phonon-glass electron crystals, thereby indicating a direction for the search for high-performance thermoelectric materials.

Lattice Softening and Band Convergence in GeTe-Based Alloys for High Thermoelectric Performance

GeTe-based alloys have been studied as promising TE materials in the midtemperature range as a lead-free alternate to PbTe due to their nontoxicity. Our previous study on GeTe1-xIx revealed that I-doping increases lattice anharmonicity and decreases the structural phase transition temperature, consequently enhancing the thermoelectric performance. Our current work elucidates the synergistic interplay between band convergence and lattice softening, resulting in an enhanced thermoelectric performance for Ge1-ySbyTe0.9I0.1 (y = 0.10, 0.12, 0.14, and 0.16). Sb doping in GeTe0.9I0.1 serves a double role: first, it leads to lattice softening, thereby reducing lattice thermal conductivity; second, it promotes a band convergence, thus a higher valley degeneracy. The presence of lattice softening is corroborated by an increase in the internal strain ratio observed in X-ray diffraction patterns. Doping also introduces phonon scattering centers, further diminishing lattice thermal conductivity. Additionally, variations in the electronic band structure are indicated by an increase in density of state effective mass and a decrease in carrier mobility with Sb concentration. Besides, Sb doping optimizes the carrier concentration efficiently. Through a two-band modeling and electronic band structure calculations, the valence band convergence due to Sb doping can be confirmed. Specifically, the energy difference between valence bands progressively narrows upon Sb doping in Ge1-ySbyTe0.9I0.1 (y = 0, 0.02, 0.05, 0.10, 0.12, 0.14, and 0.16). As a culmination of these effects, we have achieved a significant enhancement in zT for Ge1-ySbyTe0.9I0.1 (y = 0.10, 0.12, 0.14, and 0.16) across the entire range of measured temperatures. Notably, the sample with y = 0.12 exhibits the highest zT value of 1.70 at 723 K.

Interstitials in Thermoelectrics

Defect structure is pivotal in advancing thermoelectric performance with interstitials being widely recognized for their remarkable roles in optimizing both phonon and electron transport properties. Diverse interstitial atoms are identified in previous works according to their distinct roles and can be classified into rattling interstitial, decoupling interstitial, interlayer interstitial, dynamic interstitial, and liquid interstitial. Specifically, rattling interstitial can cause phonon resonance in cage compound to scatter phonon transport; decoupling interstitial can contribute to phonon blocking and electron transport due to their significantly different mean free paths; interlayer interstitial can facilitate out-of-layer electron transport in layered compounds; dynamic interstitial can tune temperature-dependent carrier density and optimize electrical transport properties at wide temperatures; liquid interstitial could improve the carrier mobility at homogeneous dispersion state. All of these interstitials have positive impact on thermoelectric performance by adjusting transport parameters. This perspective therefore intends to provide a thorough overview of advances in interstitial strategy and highlight their significance for optimizing thermoelectric parameters. Finally, the profound potential for extending interstitial strategy to various other thermoelectric systems is discussed and some future directions in thermoelectric material are also outlined.

Enhanced Thermoelectric Performance in Vacancy-Filling Heuslers due to Kondo-Like Effect

To improve thermoelectric efficiency, various tactics have been employed with considerable success to decouple intertwined material attributes. However, the integration of magnetism, derived from the unique spin characteristic that other methods cannot replicate, has been comparatively underexplored and presents an ongoing intellectual challenge. A previous research has shown that vacancy-filling Heuslers offer a highly adaptable framework for modulating thermoelectric properties. Here, it is demonstrated how intrinsic magnetic-electrical-thermal coupling can enhance the thermoelectric performance of vacancy-filling Heusler alloys. The materials, Nb0.75Ti0.25FeCrxSb with 0 ≤ x ≤ 0.1, feature a fraction of magnetic Cr ions that randomly occupy the vacancy sites of the Nb0.75Ti0.25FeSb half-Heusler matrix. These alloys achieve a remarkable thermoelectric figure of merit (zT) of 1.21 at 973 K, owing to increased Seebeck coefficient and decreased thermal conductivity. The mechanism is primarily due to the introduction of magnetism, which increases the density-of-states effective mass (reaching levels up to 15 times that of a free electron's mass) and simultaneously reduces the electronic thermal conductivity. Mass and strain-field fluctuations further reduce the lattice thermal conductivity. Even higher zT values can potentially be achieved by carefully balancing electron mobility and effective mass. This work underscores the substantial prospects for exploiting magnetic-electrical-thermal synergies in cutting-edge thermoelectric materials.

Swift Assembly of Adaptive Thermocell Arrays for Device-Level Healable and Energy-Autonomous Motion Sensors

The evolution of wearable technology has prompted the need for adaptive, self-healable, and energy-autonomous energy devices. This study innovatively addresses this challenge by introducing an MXene-boosted hydrogel electrolyte, which expedites the assembly process of flexible thermocell (TEC) arrays and thus circumvents the complicated fabrication of typical wearable electronics. Our findings underscore the hydrogel electrolyte's superior thermoelectrochemical performance under substantial deformations and repeated self-healing cycles. The resulting hydrogel-based TEC yields a maximum power output of 1032.1 nW under the ΔT of 20 K when being stretched to 500% for 1000 cycles, corresponding to 80% of its initial state; meanwhile, it sustains 1179.1 nW under the ΔT of 20 K even after 60 cut-healing cycles, approximately 92% of its initial state. The as-assembled TEC array exhibits device-level self-healing capability and high adaptability to human body. It is readily applied for touch-based encrypted communication where distinct voltage signals can be converted into alphabet letters; it is also employed as a self-powered sensor to in-situ monitor a variety of body motions for complex human actions. The swift assembly approach, combined with the versatile functionality of the TEC device, paves the way for future advancements in wearable electronics targeting at fitness monitoring and human-machine interfaces.

High figure-of-merit and power generation in high-entropy GeTe-based thermoelectrics

The high-entropy concept provides extended, optimized space of a composition, resulting in unusual transport phenomena and excellent thermoelectric performance. By tuning electron and phonon localization, we enhanced the figure-of-merit value to 2.7 at 750 kelvin in germanium telluride–based high-entropy materials and realized a high experimental conversion efficiency of 13.3% at a temperature difference of 506 kelvin with the fabricated segmented module. By increasing the entropy, the increased crystal symmetry delocalized the distribution of electrons in the distorted rhombohedral structure, resulting in band convergence and improved electrical properties. By contrast, the localized phonons from the entropy-induced disorder dampened the propagation of transverse phonons, which was the origin of the increased anharmonicity and largely depressed lattice thermal conductivity. We provide a paradigm for tuning electron and phonon localization by entropy manipulation, but we have also demonstrated a route for improving the performance of high-entropy thermoelectric materials.