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Fox C, Mao Y, Zhang X, Wang Y, Xiao J. Stacking Order Engineering of Two-Dimensional Materials and Device Applications. Chem Rev 2024; 124:1862-1898. [PMID: 38150266 DOI: 10.1021/acs.chemrev.3c00618] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral displacement) and twisting (rotation) between atomically thin layers. By altering the stacking order, many new ferroic, strongly correlated and topological orderings emerge with exotic electrical, optical and magnetic properties. Thanks to the weak vdW interlayer bonding, such highly flexible and energy-efficient stacking order engineering has transformed the design of quantum properties in 2D vdW materials, unleashing the potential for miniaturized high-performance device applications in electronics, spintronics, photonics, and surface chemistry. This Review provides a comprehensive overview of stacking order engineering in 2D vdW materials and their device applications, ranging from the typical fabrication and characterization methods to the novel physical properties and the emergent slidetronics and twistronics device prototyping. The main emphasis is on the critical role of stacking orders affecting the interlayer charge transfer, orbital coupling and flat band formation for the design of innovative materials with on-demand quantum properties and surface potentials. By demonstrating a correlation between the stacking configurations and device functionality, we highlight their implications for next-generation electronic, photonic and chemical energy conversion devices. We conclude with our perspective of this exciting field including challenges and opportunities for future stacking order engineering research.
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Affiliation(s)
- Carter Fox
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Yulu Mao
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Xiang Zhang
- Faculty of Science, University of Hong Kong, Hong Kong, China
- Faculty of Engineering, University of Hong Kong, Hong Kong, China
| | - Ying Wang
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Jun Xiao
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
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Zhou H, Auerbach N, Uzan M, Zhou Y, Banu N, Zhi W, Huber ME, Watanabe K, Taniguchi T, Myasoedov Y, Yan B, Zeldov E. Imaging quantum oscillations and millitesla pseudomagnetic fields in graphene. Nature 2023; 624:275-281. [PMID: 37993718 PMCID: PMC10719110 DOI: 10.1038/s41586-023-06763-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/01/2023] [Accepted: 10/19/2023] [Indexed: 11/24/2023]
Abstract
The exceptional control of the electronic energy bands in atomically thin quantum materials has led to the discovery of several emergent phenomena1. However, at present there is no versatile method for mapping the local band structure in advanced two-dimensional materials devices in which the active layer is commonly embedded in the insulating layers and metallic gates. Using a scanning superconducting quantum interference device, here we image the de Haas-van Alphen quantum oscillations in a model system, the Bernal-stacked trilayer graphene with dual gates, which shows several highly tunable bands2-4. By resolving thermodynamic quantum oscillations spanning more than 100 Landau levels in low magnetic fields, we reconstruct the band structure and its evolution with the displacement field with excellent precision and nanoscale spatial resolution. Moreover, by developing Landau-level interferometry, we show shear-strain-induced pseudomagnetic fields and map their spatial dependence. In contrast to artificially induced large strain, which leads to pseudomagnetic fields of hundreds of tesla5-7, we detect naturally occurring pseudomagnetic fields as low as 1 mT corresponding to graphene twisting by 1 millidegree, two orders of magnitude lower than the typical angle disorder in twisted bilayer graphene8-11. This ability to resolve the local band structure and strain at the nanoscale level enables the characterization and use of tunable band engineering in practical van der Waals devices.
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Affiliation(s)
- Haibiao Zhou
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Nadav Auerbach
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Matan Uzan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Yaozhang Zhou
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Nasrin Banu
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Weifeng Zhi
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Martin E Huber
- Departments of Physics and Electrical Engineering, University of Colorado Denver, Denver, CO, USA
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Yuri Myasoedov
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Eli Zeldov
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel.
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Hsieh V, Halbertal D, Finney NR, Zhu Z, Gerber E, Pizzochero M, Kucukbenli E, Schleder GR, Angeli M, Watanabe K, Taniguchi T, Kim EA, Kaxiras E, Hone J, Dean CR, Basov DN. Domain-Dependent Surface Adhesion in Twisted Few-Layer Graphene: Platform for Moiré-Assisted Chemistry. NANO LETTERS 2023; 23:3137-3143. [PMID: 37036942 DOI: 10.1021/acs.nanolett.2c04137] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Twisted van der Waals multilayers are widely regarded as a rich platform to access novel electronic phases thanks to the multiple degrees of freedom available for controlling their electronic and chemical properties. Here, we propose that the stacking domains that form naturally due to the relative twist between successive layers act as an additional "knob" for controlling the behavior of these systems and report the emergence and engineering of stacking domain-dependent surface chemistry in twisted few-layer graphene. Using mid-infrared near-field optical microscopy and atomic force microscopy, we observe a selective adhesion of metallic nanoparticles and liquid water at the domains with rhombohedral stacking configurations of minimally twisted double bi- and trilayer graphene. Furthermore, we demonstrate that the manipulation of nanoparticles located at certain stacking domains can locally reconfigure the moiré superlattice in their vicinity at the micrometer scale. Our findings establish a new approach to controlling moiré-assisted chemistry and nanoengineering.
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Affiliation(s)
- Valerie Hsieh
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Dorri Halbertal
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Nathan R Finney
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Ziyan Zhu
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Eli Gerber
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States
| | - Michele Pizzochero
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Emine Kucukbenli
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
- Information Systems Department, Boston University, Boston, Massachusetts 02215, United States
| | - Gabriel R Schleder
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
- Brazilian Nanotechnology National Laboratory, CNPEM, Campinas 13083-970, São Paulo, Brazil
| | - Mattia Angeli
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Eun-Ah Kim
- Department of Physics, Cornell University, Ithaca, New York 14853, United States
| | - Efthimios Kaxiras
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - James Hone
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Cory R Dean
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - D N Basov
- Department of Physics, Columbia University, New York, New York 10027, United States
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