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Jayakrishnan AR, Kim JS, Hellenbrand M, Marques LS, MacManus-Driscoll JL, Silva JPB. Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices. MATERIALS HORIZONS 2024; 11:2355-2371. [PMID: 38477152 PMCID: PMC11104485 DOI: 10.1039/d4mh00153b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Accepted: 02/27/2024] [Indexed: 03/14/2024]
Abstract
Ferroelectric memory devices such as ferroelectric memristors, ferroelectric tunnel junctions, and field-effect transistors are considered among the most promising candidates for neuromorphic computing devices. The promise arises from their defect-independent switching mechanism, low energy consumption and high power efficiency, and important properties being aimed for are reliable switching at high speed, excellent endurance, retention, and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. Binary or doped binary materials have emerged over conventional complex-composition ferroelectrics as an optimum solution, particularly in terms of CMOS compatibility. The current state-of-the-art route to achieving superlative ferroelectric performance of binary oxides is to induce ferroelectricity at the nanoscale, e.g., in ultra-thin films of doped HfO2, ZrO2, Zn1-xMgxO, Al-xScxN, and Bi1-xSmxO3. This short review article focuses on the materials science of emerging new ferroelectric materials, including their different properties such as remanent polarization, coercive field, endurance, etc. The potential of these materials is discussed for neuromorphic applications.
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Affiliation(s)
- Ampattu R Jayakrishnan
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
| | - Ji S Kim
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, CB3 OFS, UK.
| | - Markus Hellenbrand
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, CB3 OFS, UK.
| | - Luís S Marques
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
| | - Judith L MacManus-Driscoll
- Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd., Cambridge, CB3 OFS, UK.
| | - José P B Silva
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
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Cheng H, Tian H, Liu JM, Yang Y. Structure and stability of La- and hole-doped hafnia with/without epitaxial strain. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:205401. [PMID: 38335551 DOI: 10.1088/1361-648x/ad2801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2023] [Accepted: 02/09/2024] [Indexed: 02/12/2024]
Abstract
The significance of hafnia in the semiconductor industry has been amplified following the unearthing of its ferroelectric properties. We investigated the structure and electrical properties of La- and hole-doped HfO2with/without epitaxial strain by first-principles calculations. It is found that the charge compensated defect with oxygen vacancy (LaHfVO) and uncompensated defect (LaHf), compared to the undoped case, make the ferroelectric orthorhombicPca21phase (ophase) more stable. Conversely, the electrons compensated defect (LaHf+e) makes the nonpolar monoclinicP21/cphase (mphase) more stable. Furthermore, both pure hole doping (without ions substituent) and compressive strain can stabilize theophase. Our work offers a new perspective on enhancing the ferroelectricity of hafnia.
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Affiliation(s)
- Hao Cheng
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Hao Tian
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
- School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou 450044, People's Republic of China
| | - Jun-Ming Liu
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Yurong Yang
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
- Jiangsu Key Laboratory of Artificial Functional Materials, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
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Ghasemian MB, Zavabeti A, Allioux FM, Sharma P, Mousavi M, Rahim MA, Khayyam Nekouei R, Tang J, Christofferson AJ, Meftahi N, Rafiezadeh S, Cheong S, Koshy P, Tilley RD, McConville CF, Russo SP, Ton-That C, Seidel J, Kalantar-Zadeh K. Liquid Metal Doping Induced Asymmetry in Two-Dimensional Metal Oxides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2309924. [PMID: 38263808 DOI: 10.1002/smll.202309924] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 01/09/2024] [Indexed: 01/25/2024]
Abstract
The emergence of ferroelectricity in two-dimensional (2D) metal oxides is a topic of significant technological interest; however, many 2D metal oxides lack intrinsic ferroelectric properties. Therefore, introducing asymmetry provides access to a broader range of 2D materials within the ferroelectric family. Here, the generation of asymmetry in 2D SnO by doping the material with Hf0.5 Zr0.5 O2 (HZO) is demonstrated. A liquid metal process as a doping strategy for the preparation of 2D HZO-doped SnO with robust ferroelectric characteristics is implemented. This technology takes advantage of the selective interface enrichment of molten Sn with HZO crystallites. Molecular dynamics simulations indicate a strong tendency of Hf and Zr atoms to migrate toward the surface of liquid metal and embed themselves within the growing oxide layer in the form of HZO. Thus, the liquid metal-based harvesting/doping technique is a feasible approach devised for producing novel 2D metal oxides with induced ferroelectric properties, represents a significant development for the prospects of random-access memories.
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Affiliation(s)
- Mohammad B Ghasemian
- School of Chemical and Biomolecular Engineering, University of Sydney, Sydney, NSW, 2006, Australia
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Ali Zavabeti
- Department of Chemical Engineering, The University of Melbourne, Parkville, VIC, 3010, Australia
- School of Science, RMIT University, Melbourne, VIC, 3000, Australia
| | - Francois-Marie Allioux
- School of Chemical and Biomolecular Engineering, University of Sydney, Sydney, NSW, 2006, Australia
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Pankaj Sharma
- ARC Center of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
- College of Science and Engineering, Flinders University, Bedford Park, Adelaide, SA, 5042, Australia
- Flinders Institute for Nanoscale Science and Technology, Flinders University, Adelaide, SA, 5042, Australia
| | - Maedehsadat Mousavi
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Md Arifur Rahim
- School of Chemical and Biomolecular Engineering, University of Sydney, Sydney, NSW, 2006, Australia
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Rasoul Khayyam Nekouei
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Jianbo Tang
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Andrew J Christofferson
- School of Science, RMIT University, Melbourne, VIC, 3000, Australia
- ARC Center of Excellence in Exciton Science, School of Science, RMIT University, Melbourne, Victoria, 3000, Australia
| | - Nastaran Meftahi
- ARC Center of Excellence in Exciton Science, School of Science, RMIT University, Melbourne, Victoria, 3000, Australia
| | - Somayeh Rafiezadeh
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Soshan Cheong
- Mark Wainwright Analytical Centre, Electron Microscope Unit, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Pramod Koshy
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Richard D Tilley
- Mark Wainwright Analytical Centre, Electron Microscope Unit, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
- School of Chemistry and Australian Centre for NanoMedicine, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Chris F McConville
- School of Science, RMIT University, Melbourne, VIC, 3000, Australia
- Institute for Frontier Materials, Deakin University, Geelong, Victoria, 3216, Australia
| | - Salvy P Russo
- ARC Center of Excellence in Exciton Science, School of Science, RMIT University, Melbourne, Victoria, 3000, Australia
| | - Cuong Ton-That
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Jan Seidel
- ARC Center of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Kourosh Kalantar-Zadeh
- School of Chemical and Biomolecular Engineering, University of Sydney, Sydney, NSW, 2006, Australia
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
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Liu Z, Zhang Q, Xie D, Zhang M, Li X, Zhong H, Li G, He M, Shang D, Wang C, Gu L, Yang G, Jin K, Ge C. Interface-type tunable oxygen ion dynamics for physical reservoir computing. Nat Commun 2023; 14:7176. [PMID: 37935751 PMCID: PMC10630289 DOI: 10.1038/s41467-023-42993-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/18/2023] [Accepted: 10/26/2023] [Indexed: 11/09/2023] Open
Abstract
Reservoir computing can more efficiently be used to solve time-dependent tasks than conventional feedforward network owing to various advantages, such as easy training and low hardware overhead. Physical reservoirs that contain intrinsic nonlinear dynamic processes could serve as next-generation dynamic computing systems. High-efficiency reservoir systems require nonlinear and dynamic responses to distinguish time-series input data. Herein, an interface-type dynamic transistor gated by an Hf0.5Zr0.5O2 (HZO) film was introduced to perform reservoir computing. The channel conductance of Mott material La0.67Sr0.33MnO3 (LSMO) can effectively be modulated by taking advantage of the unique coupled property of the polarization process and oxygen migration in hafnium-based ferroelectrics. The large positive value of the oxygen vacancy formation energy and negative value of the oxygen affinity energy resulted in the spontaneous migration of accumulated oxygen ions in the HZO films to the channel, leading to the dynamic relaxation process. The modulation of the channel conductance was found to be closely related to the current state, identified as the origin of the nonlinear response. In the time series recognition and prediction tasks, the proposed reservoir system showed an extremely low decision-making error. This work provides a promising pathway for exploiting dynamic ion systems for high-performance neural network devices.
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Affiliation(s)
- Zhuohui Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- Yangtze River Delta Physics Research Center Co. Ltd., 213300, Liyang, China
| | - Donggang Xie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Mingzhen Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Xinyan Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Hai Zhong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physics and Optoelectronics Engineering, Ludong University, 264025, Yantai, Shandong, China
| | - Ge Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Dashan Shang
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China.
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China.
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