Integrated microwave photonic notch filter using a heterogeneously integrated Brillouin and active-silicon photonic circuit

Integrated Brillouin photonics in thin-film lithium niobate

Stimulated Brillouin scattering (SBS) is revolutionizing low-noise lasers and microwave photonics. However, a scalable and efficient integrated platform for Brillouin photonics has remained elusive. Here, we leverage the well-established thin-film lithium niobate (TFLN) platform to address these long-standing limitations. We report two distinct SBS processes on this platform, driven by surface acoustic wave (SAW) with 20-megahertz linewidth or bulk acoustic waves with a linewidth 200 times broader. Exploiting the strong SAW SBS gain, we demonstrate a narrowband internal net gain amplifier overcoming propagation losses. In addition, we achieve a stimulated Brillouin laser in TFLN, featuring a tuning range exceeding 20 nanometers and enabling high-purity radio frequency signal generation with an intrinsic linewidth of 9 hertz. Furthermore, we develop a programmable, multifunctional integrated Brillouin microwave photonic processor capable of notch filtering, bandpass filtering, or true time delay. This work bridges SBS with advanced TFLN technologies such as high-speed modulators and wideband optical frequency combs, unlocking new paradigms for integrated Brillouin photonics.

Widely Tunable Photonic Filter Based on Equivalent Chirped Four-Phase-Shifted Sampled Bragg Gratings

We have developed an integrated dual-band photonic filter (PF) utilizing equivalent chirped four-phase-shifted sidewall-sampled Bragg gratings (4PS-SBG) on a silicon-on-insulator platform. Using the reconstruction equivalent-chirp technique, we designed linearly chirped 4PS Bragg gratings with two π-phase shifts (π-PSs) positioned at 1/3 and 2/3 of the grating cavity, introducing two passbands in the + first order channel. Leveraging the significant thermo-optic effect of silicon, dual-band tuning is achieved through integrated microheaters (MHs) on the chip surface. By varying the injection currents from 0 to 85 mA into the MHs, the device demonstrates continuous and wide-range optical frequency division performance, with the frequency interval between the two passbands adjustable from 52.1 to 439.5 GHz. Four notable frequency division setups at 100, 200, 300, and 400 GHz were demonstrated using a 100 GHz, 1535 nm semiconductor passive mode-locked laser as the light source.

Low-loss compact chalcogenide microresonators for efficient stimulated Brillouin lasers

Chalcogenide glasses (ChGs) possess a high elasto-optic coefficient, making them ideal for applications in microwave photonics and narrow-linewidth lasers based on stimulated Brillouin scattering (SBS). However, current As2S3-based integrated devices suffer from poor stability and low laser-induced damage threshold, and planar ChG devices feature limited quality factors. In this Letter, we propose and demonstrate a high-quality integrated GeSbS ChG Brillouin photonic device. By introducing Euler bending structures, we suppress high-order optical modes and reduce propagation losses in a finger-shaped GeSbS microresonator, resulting in a compact footprint of 3.8 mm2 and a high intrinsic quality factor of 5.19 × 106. The combination of GeSbS material's high Brillouin gain and the resonator's high-quality factor enables the generation of stimulated Brillouin lasers with a low threshold of 0.96 mW and a fundamental linewidth of 58 Hz. Moreover, cascaded stimulated Brillouin lasers can be realized up to the seventh order, yielding microwave beat frequencies up to 40 GHz.

Anti-resonant acoustic waveguides enabled tailorable Brillouin scattering on chip

Empowering independent control of optical and acoustic modes and enhancing the photon-phonon interaction, integrated photonics boosts the advancements of on-chip stimulated Brillouin scattering (SBS). However, achieving acoustic waveguides with low loss, tailorability, and easy fabrication remains a challenge. Here, inspired by the optical anti-resonance in hollow-core fibers and acoustic anti-resonance in cylindrical waveguides, we propose suspended anti-resonant acoustic waveguides (SARAWs) with superior confinement and high selectivity of acoustic modes, supporting both forward and backward SBS on chip. Furthermore, this structure streamlines the design and fabrication processes. Leveraging the advantages of SARAWs, we showcase a series of breakthroughs for SBS within a compact footprint on the silicon-on-insulator platform. For forward SBS, a centimeter-scale SARAW supports a large net gain exceeding 6.4 dB. For backward SBS, we observe an unprecedented Brillouin frequency shift of 27.6 GHz and a mechanical quality factor of up to 1960 in silicon waveguides. This paradigm of acoustic waveguide propels SBS into a new era, unlocking new opportunities in the fields of optomechanics, phononic circuits, and hybrid quantum systems.

Towards large-scale programmable silicon photonic chip for signal processing

Optical signal processing has been playing a crucial part as powerful engine for various information systems in the practical applications. In particular, achieving large-scale programmable chips for signal processing are highly desirable for high flexibility, low cost and powerful processing. Silicon photonics, which has been developed successfully in the past decade, provides a promising option due to its unique advantages. Here, recent progress of large-scale programmable silicon photonic chip for signal processing in microwave photonics, optical communications, optical computing, quantum photonics as well as dispersion controlling are reviewed. Particularly, we give a discussion about the realization of high-performance building-blocks, including ultra-low-loss silicon photonic waveguides, 2 × 2 Mach-Zehnder switches and microring resonator switches. The methods for configuring large-scale programmable silicon photonic chips are also discussed. The representative examples are summarized for the applications of beam steering, optical switching, optical computing, quantum photonic processing as well as optical dispersion controlling. Finally, we give an outlook for the challenges of further developing large-scale programmable silicon photonic chips.

Slow-light-enhanced Brillouin scattering with integrated Bragg grating

Advancements in photonic integration technology have enabled the effective excitation of simulated Brillouin scattering (SBS) on a single chip, boosting Brillouin-based applications such as microwave photonic signal processing, narrow-linewidth lasers, and optical sensing. However, on-chip circuits still require large pump power and centimeter-scale waveguide length to achieve a considerable Brillouin gain, making them both power-inefficient and challenging for integration. Here, we exploit the slow-light effect to significantly enhance SBS, presenting the first, to the best of our knowledge, demonstration of a slow-light Brillouin-active waveguide on the silicon-on-insulator (SOI) platform. By integrating a Bragg grating with a suspended ridge waveguide, a 2.1-fold enhancement of the forward Brillouin gain coefficient is observed in a 1.25 mm device. Furthermore, this device shows a Brillouin gain coefficient of 1,693 m-1W-1 and a mechanical quality factor of 1,080. The short waveguide length reduces susceptibility to inhomogeneous broadening, enabling the simultaneous achievement of a high Brillouin gain coefficient and a high mechanical quality factor. This approach introduces an additional dimension to enhance acousto-optic interaction efficiency in the SOI platform and holds significant potential for microwave photonic filters and high spatial resolution sensing.

Loading-effect-based three-dimensional microfabrication empowers on-chip Brillouin optomechanics

The acousto-optic interaction known as stimulated Brillouin scattering (SBS) has emerged as a fundamental principle for realizing crucial components and functionalities in integrated photonics. However, the main challenge of integrating Brillouin devices is how to effectively confine both optical and acoustic waves. Apart from that, the manufacturing processes for these devices need to be compatible with standard fabrication platforms and streamlined to facilitate their large-scale integration. Here, we demonstrate a novel, to the best of our knowledge, suspended nanowire structure that can tightly confine photons and phonons. Furthermore, tailored for this structure, we introduce a loading-effect-based three-dimensional microfabrication technique, compatible with complementary metal-oxide-semiconductor (CMOS) technology. This innovative technique allows for the fabrication of the entire structure using a single-step lithography exposure, significantly streamlining the fabrication process. Leveraging this structure and fabrication scheme, we have achieved a Brillouin gain coefficient of 1100 W-1m-1 on the silicon-on-insulator platform within a compact footprint. It can support a Brillouin net gain over 4.1 dB with modest pump powers. We believe that this structure can significantly advance the development of SBS on chip, unlocking new opportunities for a large-scale integration of Brillouin-based photonic devices.