Synergistic-potential engineering enables high-efficiency graphene photodetectors for near- to mid-infrared light

Spatially resolved optoelectronic puddles of WTe2-2D Te heterostructure

Two-dimensional (2D) semiconductors have attracted significant scientific interest because of their optical properties. Their applications in optoelectronic devices can be further expanded by combining them to form heterostructures. We characterized a WTe2-2D Te heterostructure through local probing of the photocurrent with respect to the magnitude, phase, and position. Photocurrent generation within the device is divided into distinct regions: photo-thermoelectric effects occur solely at the 2D Te-Au junction area, PV-dominant effects at the 2D-WTe2 interface, and thermoelectric-to-photovoltaic crossover effects at the WTe2-2D Te overlap area. These different photocurrents cannot be fused into a single domain because each area is governed by different generation mechanisms, which depend on the location of the device. The power dependence of each photocurrent type also varies within the device. Our results indicate that careful material selection and device structure design, based on the electronic, optical, and thermal properties of the channel materials, are essential to avoid forming different optoelectronic puddles that could counteract each other within a single device.

Integrative plasmonics: optical multi-effects and acousto-electric-thermal fusion for biosensing, energy conversion, and photonic circuits

Surface plasmons, a unique optical phenomenon arising at the interface between metals and dielectrics, have garnered significant interest across fields such as biochemistry, materials science, energy, optics, and nanotechnology. Recently, plasmonics is evolving from a focus on "classical plasmonics," which emphasizes fundamental effects and applications, to "integrative plasmonics," which explores the integration of plasmonics with multidisciplinary technologies. This review explores this evolution, summarizing key developments in this technological shift and offering a timely discussion on the fusion mechanisms, strategies, and applications. First, we examine the integration mechanisms of plasmons within the realm of optics, detailing how fundamental plasmonic effects give rise to optical multi-effects, such as plasmon-phonon coupling, nonlinear optical effects, electromagnetically induced transparency, chirality, nanocavity resonance, and waveguides. Next, we highlight strategies for integrating plasmons with technologies beyond optics, analyzing the processes and benefits of combining plasmonics with acoustics, electronics, and thermonics, including comprehensive plasmonic-electric-acousto-thermal integration. We then review cutting-edge applications in biochemistry (molecular diagnostics), energy (harvesting and catalysis), and informatics (photonic integrated circuits). These applications involve surface-enhanced Raman scattering (SERS), surface-enhanced infrared absorption (SEIRA), surface-enhanced fluorescence (SEF), chirality, nanotweezers, photoacoustic imaging, perovskite solar cells, photocatalysis, photothermal therapy, and triboelectric nanogenerators (TENGs). Finally, we conclude with a forward-looking perspective on the challenges and future of integrative plasmonics, considering advances in mechanisms (quantum effects, spintronics, and topology), materials (Dirac semimetals and hydrogels), technologies (machine learning, edge computing, in-sensor computing, and neuroengineering), and emerging applications (5G, 6G, virtual reality, and point-of-care testing).

Nanoresonance Cavity and Localized Surface Plasmon Resonance Enhanced Broad-Spectral Photodetector for Versatile Applications

To overcome the limitations inherent in traditional silicon (Si)-based photodetectors, particularly the low light absorption and complex carrier dynamics, this study proposes and fabricates in situ three-dimensional (3D) graphene/Si Schottky junctions integrated with WS2 quantum dots (QDs). The introduction of WS2 QDs enables the heterojunction to realize "double-enhanced absorption" by the synergistic effect of the natural nanoresonant cavity effect and the surface plasmon resonance effect (LSPR) of the WS2 QDs. Photodetectors constructed from the WS2 QDs/3D-graphene/Si heterojunction demonstrate a broadband, self-powered response from 440 to 1850 nm, maintaining stable operation at 1550 nm for 4 months. They exhibit high-frequency modulation (2 kHz), a responsivity of up to 83 A/W, a specific detectivity of 5.6 × 1011 Jones, rapid response/recovery times of 139 μs/145 μs with multifunctionality in image acquisition, information encryption, and logic operations. This research lays the foundation for high-performance, stable photodetectors and light-controlled logic circuits in communications and imaging.

Efficient Large-Area Graphene p-n Junction Terahertz Receivers on an Integrated Optical Platform

The integration of graphene-based p-n junctions into photonic or optoelectronic platforms can allow efficient guiding and absorption of the light signals into the detection element, promising a major improvement in the efficiency of the system, by minimizing optical losses and enhancing the light coupling. These platforms can also potentially provide additional functionalities, such as frequency filtering, modulation, or multiplexing of the signals. At terahertz (THz) frequencies, this can lead to a variety of new applications such as sensing, imaging, and communication, as well as advancements in high-speed electronics and wireless technologies. Here, we took advantage of large area industrial-scale graphene, realized via an inexpensive production process, to engineer an antenna-integrated graphene Salisbury screen (AgSS) p-n junction photodetector, in which the electromagnetic coupling between graphene and the free-space wavelength is optimized by controlling the antenna dimensions and its distance from a sub-wavelength thin reflective mirror. Room-temperature noise equivalent powers < 300 pWHz-1/2, response time < 5 ns and a power dynamic range larger than four orders of magnitude at 2.86 THz is reached, exceeding the performances of exfoliated graphene photodetectors technologies, and competitive with complementary metal-oxide semiconductor (CMOS) and micro-bolometer technologies at high THz frequencies.

The role of trap states in MoS2-based photodetectors

Two-dimensional materials show great potential for future optoelectronic device applications, especially in the field of broadband optical detection, due to their high optical responsivity and tunable bandgap structure. In communication and sensing applications, the detection of weak light signals is crucial for improving the quality of signal transmission and the sensitivity of sensors. Although the photogating effect has been shown to provide high light sensitivity, the key features to achieve this dominant light response have not been fully discussed. In this study, we explain in detail the physical mechanism of the photoresponse of molybdenum disulphide-based photodetectors and propose a general basis of judgement for comparing the magnitude of the trap-state action. Through experimental and theoretical analyses, we reveal the physical mechanisms of photocurrents at various stages in the optical ON/OFF switching cycles and provide a theoretical basis for optimising the performance of two-dimensional material-based photodetectors. The results show that the trap states significantly affect the photoresponse characteristics of photodetectors, especially the photocurrent changes at different stages of the optical ON/OFF switching cycles. These findings not only deepen the understanding of the photoelectric properties of two-dimensional materials, but also provide important theoretical guidance for the design of high-performance photodetectors.

Nanofabrication for Nanophotonics

Nanofabrication, a pivotal technology at the intersection of nanoscale engineering and high-resolution patterning, has substantially advanced over recent decades. This technology enables the creation of nanopatterns on substrates crucial for developing nanophotonic devices and other applications in diverse fields including electronics and biosciences. Here, this mega-review comprehensively explores various facets of nanofabrication focusing on its application in nanophotonics. It delves into high-resolution techniques like focused ion beam and electron beam lithography, methods for 3D complex structure fabrication, scalable manufacturing approaches, and material compatibility considerations. Special attention is given to emerging trends such as the utilization of two-photon lithography for 3D structures and advanced materials like phase change substances and 2D materials with excitonic properties. By highlighting these advancements, the review aims to provide insights into the ongoing evolution of nanofabrication, encouraging further research and application in creating functional nanostructures. This work encapsulates critical developments and future perspectives, offering a detailed narrative on the state-of-the-art in nanofabrication tailored for both new researchers and seasoned experts in the field.

Coupling Strategies of Multi-Physical Fields in 2D Materials-Based Photodetectors

2D materials possess exceptional carrier transport properties and mechanical stability despite their ultrathin nature. In this context, the coupling between polarization fields and photoelectric fields has been proposed to modulate the physical properties of 2D materials, including energy band structure, carrier mobility, as well as the dynamic processes of photoinduced carriers. These strategies have led to significant improvements in the performance, functionality, and integration density of 2D materials -based photodetectors. The present review introduces the coupling of photoelectric field with four fundamental polarization fields, delivered from dielectric, piezoelectric, pyroelectric, and ferroelectric effects, focusing on their synergistic coupling mechanisms, distinctive properties, and technological merits in advanced photodetection applications. More importantly, it sheds light on the new path of material synthesis and novel structure design to improve the efficiency of the coupling strategies in photodetectors. Then, research advances on the synergy of multi-polarization effects and photoelectric effect in the domain of bionic photodetectors are highlighted. Finally, the review outlines the future research perspectives of coupling strategies in 2D materials-based photodetectors and proposes potential solutions to address the challenges issues of this area. This comprehensive overview will guide futural fundamental and applied research that capitalizes on coupling strategies for sensitive and intelligent photodetection.

Uncooled near- to long-wave-infrared polarization-sensitive photodetectors based on MoSe2/PdSe2 van der Waals heterostructures

Infrared polarization-sensitive photodetectors have attracted considerable interest for night vision, remote sensing and imaging applications. Traditional bulk infrared photodetectors suffer from integration challenges and high-power consumption induced by the cryogenic cooling requirement. Here, we demonstrate a tunneling-dominant triple-junction broadband polarization-sensitive photodetector based on a van der Waals heterostructure, operating from the near-infrared (NIR) to the long-wave infrared (LWIR) band. The device exhibits low noise current, low power consumption and high detectivity. Benefiting from the photogating-assisted tunneling, it reaches a responsivity of ~ 8 × 104 A/W and a response speed of 590 ns under NIR illumination. Apparent blackbody response and high photoresponse up to 10.6 μm is achieved with a room temperature responsivity and detectivity of 0.47 A/W and over 109 Jones. Remarkably, bias-tunable polarization detection capability and high polarization ratios are observed from NIR to LWIR, which further boost target detection and imaging capabilities. Our results offer a promising approach for multidimensional imaging applications and device miniaturization.

Construction and Multifunctional Photonic Applications of Light Absorption-Enhanced Silicon-Based Schottky Coupled Structures

To expand the detection capabilities of silicon (Si)-based photodetector and address key scientific challenges such as low light absorption efficiency and short carrier lifetime in Si-based graphene photodetector. This work introduces a novel Si-based Schottky coupled structure by in situ growth of 3D-graphene and molybdenum disulfide quantum dots (MoS2 QDs) on Si substrates using chemical vapor deposition (CVD) and plasma-enhanced chemical vapor deposition (PECVD) techniques. The findings validate the "dual-enhanced absorption" effect, enhancing the understanding of the mechanisms that improve optoelectronic performance. The synergistic effect of 3D-graphene's natural nano-resonant cavity and MoS2 QDs enhances light absorption efficiency and extends carrier lifetime. Introducing MoS2 QDs broadens and intensifies the built-in electric field, promoting the separation of photogenerated electrons and holes. The photodetector exhibits a wideband light response in the wavelength range of 380-2200 nm. It stably outputs photocurrent under high-frequency (1 kHz) modulated laser (2200 nm), with a responsivity (R) of 40 mA W-1 and detectivity (D*) of 1.15 × 109 Jones. Photodetectors show the ability to process and encrypt complex binary signals and achieve versatility in "AND" gate and "OR" gate logic operations, as well as image sensing (240 × 200 pixels).

Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision

Polarization is an important attribute of light and can be artificially modulated as a versatile information carrier. Conventional polarization-sensitive photodetection relies on a combination of polarizing optical elements and standard photodetectors, which requires a substantial amount of space and manufacturing expenses. Although on-chip polarized photodetectors have been realized in recent years based on two-dimensional (2D) materials with low-symmetry crystal structures, they are limited by the intrinsic anisotropic property and thus the optional range of materials, the operation wavelength, and more importantly, the low anisotropic ratio, hindering their practical applications. In this work, we construct a versatile platform that transcends the constraints of material anisotropy, by integrating WSe2-based photodetector with MoS2-based field-effect transistor, delivering high-performance broadband polarization detection capability with orders of magnitude improvement in anisotropic ratio and on/off ratio. The polarization arises from hot electron injection caused by the plasmonic metal electrode and is amplified by the transistor to raise the anisotropic ratio from 2 to an impressive value over 60 in the infrared (IR) band, reaching the level of existing applications. Meanwhile, the system achieves a significant improvement in photosensitivity, with an on/off ratio of over 103 in the IR band. Based on the above performance optimization, we demonstrated its polarization-modulated IR optical communication ability and polarized artificial vision applications with a high image recognition accuracy of ~99%. The proposed platform provides a promising route for the development of the long-sought minimized, high-performance, multifunctional optoelectronic systems.

Graphene Readout Silicon-Based Microtube Photodetectors for Encrypted Visible Light Communication

The implementation of an advanced light receiver is imperative for the widespread application of visible light communication. However, the integration of multifunctional and high-performance visible light receivers is still limited by device structure and system complexity. Herein, a graphene-readout silicon-based microtube photodetector is proposed as the receiver for omnidirectional Mbps-level visible light communication. The integration of graphene-semiconductor material systems simultaneously ensures the effective absorption of incident light and rapid readout of photogenerated carriers, and the device exhibits an ultrafast response speed of 75 ns and high responsivity of 6803 A W-1. In addition, the microtube photodetector realizes the omnidirectional light-trapping and enhanced polarization photodetection. As the receiving end of the visible light communication system, the microtube photodetector achieves a data rate of up to 778 Mbps, a field of view of 140°, and the encrypted visible light communication of polarized light, providing a new possibility for the future development of the internet of things and information security.

New paradigms of 2D layered material self-driven photodetectors

By virtue of the high carrier mobility, diverse electronic band structures, excellent electrostatic tunability, easy integration, and strong light-harvesting capability, 2D layered materials (2DLMs) have emerged as compelling contenders in the realm of photodetection and ushered in a new era of optoelectronic industry. In contrast to powered devices, self-driven photodetectors boast a wealth of advantages, notably low dark current, superior signal-to-noise ratio, low energy consumption, and exceptional compactness. Nevertheless, the construction of self-driven 2DLM photodetectors based on traditional p-n, homo-type, or Schottky heterojunctions, predominantly adopting a vertical configuration, confronts insurmountable dilemmas such as intricate fabrication procedures, sophisticated equipment, and formidable interface issues. In recent years, worldwide researchers have been devoted to pursuing exceptional strategies aimed at achieving the self-driven characteristics. This comprehensive review offers a methodical survey of the emergent paradigms toward self-driven photodetectors constructed from 2DLMs. Firstly, the burgeoning approaches employed to realize diverse self-driven 2DLM photodetectors are compiled, encompassing strategies such as strain modulation, thickness tailoring, structural engineering, asymmetric ferroelectric gating, asymmetric contacts (including work function, contact length, and contact area), ferroelectricity-enabled bulk photovoltaic effect, asymmetric optical antennas, among others, with a keen eye on the fundamental physical mechanisms that underpin them. Subsequently, the prevalent challenges within this research landscape are outlined, and the corresponding potential approaches for overcoming these obstacles are proposed. On the whole, this review highlights new device engineering avenues for the implementation of bias-free, high-performance, and highly integrated 2DLM optoelectronic devices.

Recent Progress of 2D Materials-Based Photodetectors from UV to THz Waves: Principles, Materials, and Applications

Photodetectors are one of the most critical components for future optoelectronic systems and it undergoes significant advancements to meet the growing demands of diverse applications spanning the spectrum from ultraviolet (UV) to terahertz (THz). 2D materials are very attractive for photodetector applications because of their distinct optical and electrical properties. The atomic-thin structure, high carrier mobility, low van der Waals (vdWs) interaction between layers, relatively narrower bandgap engineered through engineering, and significant absorption coefficient significantly benefit the chip-scale production and integration of 2D materials-based photodetectors. The extremely sensitive detection at ambient temperature with ultra-fast capabilities is made possible with the adaptability of 2D materials. Here, the recent progress of photodetectors based on 2D materials, covering the spectrum from UV to THz is reported. In this report, the interaction of light with 2D materials is first deliberated on in terms of optical physics. Then, various mechanisms on which detectors work, important performance parameters, important and fruitful fabrication methods, fundamental optical properties of 2D materials, various types of 2D materials-based detectors, different strategies to improve performance, and important applications of photodetectors are discussed.

Metasurface-enabled broadband multidimensional photodetectors

Light encodes multidimensional information, such as intensity, polarization, and spectrum. Traditional extraction of this light information requires discrete optical components by subdividing the detection area into many "one-to-one" functional pixels. The broadband photodetection of high-dimensional optical information with a single integrated on-chip detector is highly sought after, yet it poses significant challenges. In this study, we employ a metasurface-assisted graphene photodetector, enabling to simultaneously detect and differentiate various polarization states and wavelengths of broadband light (1-8 μm) at the wavelength prediction accuracy of 0.5 μm. The bipolar polarizability empowered by this design allows to decouple multidimensional information (encompassing polarization and wavelength), which can be achieved by encoding vectorial photocurrents with varying polarities and amplitudes. Furthermore, cooperative multiport metasurfaces are adopted and boosted by machine learning techniques. It enables precise spin-wavelength differentiation over an extremely broad wavelength range (1-8 μm). Our innovation offers a recipe for highly compact and high-dimensional spectral-polarization co-detection.

Graphene-Based Dual-Band Metasurface Absorber with High Frequency Ratio

In this paper, we propose a novel dual-band metasurface absorber with a high frequency ratio based on graphene. By carefully designing a centrally symmetrical graphene pattern and positioning it on a glass medium, while utilizing ITO as a ground, the metasurface absorber achieves remarkable high frequency ratio microwave absorption. Specifically, this metasurface absorber exhibits two distinct resonance points at 3.7 GHz and 14 GHz, with an impressive frequency ratio over 3.5. It achieves over 90% absorption efficiency in the frequency ranges of 3.5-4.5 GHz and 13.5-14.5 GHz, highlighting its capability to effectively absorb microwaves across widely spaced frequency bands. Furthermore, the metasurface absorber demonstrates optical transparency and polarization insensitivity, adding to its versatility and potential applications. The measured results of the fabricated prototype validate its design and potential for practical use.

Atomic-Thin WS2 Kirigami for Bidirectional Polarization Detection

The assembly and patterning engineering in two-dimensional (2D) materials hold importance for chip-level designs incorporating multifunctional detectors. At present, the patterning and stacking methods of 2D materials inevitably introduce impurity instability and functional limitations. Here, the space-confined chemical vapor deposition method is employed to achieve state-of-the-art kirigami structures of self-assembled WS2, featuring various layer combinations and stacking configurations. With this technique as a foundation, the WS2 nano-kirigami is integrated with metasurface design, achieving a photodetector with bidirectional polarization-sensitive detection capability in the infrared spectrum. Nano-kirigami can eliminate some of the uncontrollable factors in the processing of 2D material devices, providing a freely designed platform for chip-level multifunctional detection across multiple modules.

Enhancing 2D Photonics and Optoelectronics with Artificial Microstructures

By modulating subwavelength structures and integrating functional materials, 2D artificial microstructures (2D AMs), including heterostructures, superlattices, metasurfaces and microcavities, offer a powerful platform for significant manipulation of light fields and functions. These structures hold great promise in high-performance and highly integrated optoelectronic devices. However, a comprehensive summary of 2D AMs remains elusive for photonics and optoelectronics. This review focuses on the latest breakthroughs in 2D AM devices, categorized into electronic devices, photonic devices, and optoelectronic devices. The control of electronic and optical properties through tuning twisted angles is discussed. Some typical strategies that enhance light-matter interactions are introduced, covering the integration of 2D materials with external photonic structures and intrinsic polaritonic resonances. Additionally, the influences of external stimuli, such as vertical electric fields, enhanced optical fields and plasmonic confinements, on optoelectronic properties is analysed. The integrations of these devices are also thoroughly addressed. Challenges and future perspectives are summarized to stimulate research and development of 2D AMs for future photonics and optoelectronics.

Two-dimensional layered material photodetectors: what could be the upcoming downstream applications beyond prototype devices?

With distinctive advantages spanning excellent flexibility, rich physical properties, strong electrostatic tunability, dangling-bond-free surface, and ease of integration, 2D layered materials (2DLMs) have demonstrated tremendous potential for photodetection. However, to date, most of the research enthusiasm has been merely focused on developing novel prototype devices. In the past few years, researchers have also been devoted to developing various downstream applications based on 2DLM photodetectors to contribute to promoting them from fundamental research to practical commercialization, and extensive accomplishments have been realized. In spite of the remarkable advancements, these fascinating research findings are relatively scattered. To date, there is still a lack of a systematic and profound summarization regarding this fast-evolving domain. This is not beneficial to researchers, especially researchers just entering this research field, who want to have a quick, timely, and comprehensive inspection of this fascinating domain. To address this issue, in this review, the emerging downstream applications of 2DLM photodetectors in extensive fields, including imaging, health monitoring, target tracking, optoelectronic logic operation, ultraviolet monitoring, optical communications, automatic driving, and acoustic signal detection, have been systematically summarized, with the focus on the underlying working mechanisms. At the end, the ongoing challenges of this rapidly progressing domain are identified, and the potential schemes to address them are envisioned, which aim at navigating the future exploration as well as fully exerting the pivotal roles of 2DLMs towards the practical optoelectronic industry.

A parylene/graphene UV photodetector with ultrahigh responsivity and long term stability

Long term stability, high responsivity, and fast response speed are essential for the commercialization of graphene photodetectors (GPDs). In this work, a parylene/graphene UV photodetector with long term stability, ultrahigh responsivity and fast response speed, is demonstrated. Parylene as a stable physical and chemical insulating layer reduces the environmental sensitivity of graphene, and enhances the performances of GPDs. In addition, utilizing bilayer electrodes reduces the buckling and damage of graphene after transferring. The parylene/graphene UV photodetector exhibits an ultrahigh responsivity of 5.82 × 105AW-1under 325 nm light irradiation at 1 V bias. Additionally, it shows a fast response speed with a rise time of 80μs and a fall time of 17μs, and a long term stability at 405 nm wavelength which is absent in the device without parylene. The parylene/graphene UV photodetector possesses superior performances. This paves the way for the commercial application of the high-performance graphene hybrid photodetectors, and provides a practical method for maintaining the long term stability of two dimensional (2D) materials.

The Application of Multi-Parameter Multi-Modal Technology Integrating Biological Sensors and Artificial Intelligence in the Rapid Detection of Food Contaminants

Against the backdrop of continuous socio-economic development, there is a growing concern among people about food quality and safety. Individuals are increasingly realizing the critical importance of healthy eating for bodily health; hence the continuous rise in demand for detecting food pollution. Simultaneously, the rapid expansion of global food trade has made people's pursuit of high-quality food more urgent. However, traditional methods of food analysis have certain limitations, mainly manifested in the high degree of reliance on personal subjective judgment for assessing food quality. In this context, the emergence of artificial intelligence and biosensors has provided new possibilities for the evaluation of food quality. This paper proposes a comprehensive approach that involves aggregating data relevant to food quality indices and developing corresponding evaluation models to highlight the effectiveness and comprehensiveness of artificial intelligence and biosensors in food quality evaluation. The potential prospects and challenges of this method in the field of food safety are comprehensively discussed, aiming to provide valuable references for future research and practice.

Progress in Advanced Infrared Optoelectronic Sensors

Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human-computer interaction systems. A comprehensive understanding of infrared optoelectronic sensors is of great importance for achieving their future optimization. This paper comprehensively reviews the recent advancements in infrared optoelectronic sensors. Firstly, their working mechanisms are elucidated. Then, the key metrics for evaluating an infrared optoelectronic sensor are introduced. Subsequently, an overview of promising materials and nanostructures for high-performance infrared optoelectronic sensors, along with the performances of state-of-the-art devices, is presented. Finally, the challenges facing infrared optoelectronic sensors are posed, and some perspectives for the optimization of infrared optoelectronic sensors are discussed, thereby paving the way for the development of future infrared optoelectronic sensors.

Uncooled Broadband Photodetection via Light Trapping in Conformal PtTe2-Silicon Nanopillar Heterostructures

Dirac semimetals have demonstrated significant attraction in the field of optoelectronics due to their unique bandgap structure and high carrier mobility. Combining them with classical semiconductor materials to form heterojunctions enables broadband optoelectronic conversion at room temperature. However, the low light absorption of layered Dirac semimetals substantially limits the device's responsivity in the infrared band. Herein, a three-dimensional (3D) heterostructure, composed of silicon nanopillars (SiNPs) and a conformal PtTe2 film, is proposed and demonstrated to enhance the photoresponsivity for uncooled broadband detection. The light trapping effect in the 3D heterostructure efficiently promotes the interaction between light and PtTe2, while also enhancing the light absorption efficiency of silicon, which enables the enhancement of the device responsivity across a broadband spectrum. Experimentally, the PtTe2-SiNPs heterojunction device demonstrates excellent photoelectric conversion behavior across the visible, near-infrared, and long-wave infrared (LWIR) bands, with its responsivity demonstrating an order-of-magnitude improvement compared to the counterparts with planar silicon heterojunctions. Under 11 μm laser irradiation, the noise equivalent power (NEP) can reach 1.76 nW·Hz-1/2 (@1 kHz). These findings offer a strategic approach to the design and fabrication of high-performance broadband photodetectors based on Dirac semimetals.