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Wang G, Nowakowski P, Farahmand Bafi N, Midtvedt B, Schmidt F, Callegari A, Verre R, Käll M, Dietrich S, Kondrat S, Volpe G. Nanoalignment by critical Casimir torques. Nat Commun 2024; 15:5086. [PMID: 38876993 PMCID: PMC11178905 DOI: 10.1038/s41467-024-49220-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/22/2024] [Accepted: 05/24/2024] [Indexed: 06/16/2024] Open
Abstract
The manipulation of microscopic objects requires precise and controllable forces and torques. Recent advances have led to the use of critical Casimir forces as a powerful tool, which can be finely tuned through the temperature of the environment and the chemical properties of the involved objects. For example, these forces have been used to self-organize ensembles of particles and to counteract stiction caused by Casimir-Liftshitz forces. However, until now, the potential of critical Casimir torques has been largely unexplored. Here, we demonstrate that critical Casimir torques can efficiently control the alignment of microscopic objects on nanopatterned substrates. We show experimentally and corroborate with theoretical calculations and Monte Carlo simulations that circular patterns on a substrate can stabilize the position and orientation of microscopic disks. By making the patterns elliptical, such microdisks can be subject to a torque which flips them upright while simultaneously allowing for more accurate control of the microdisk position. More complex patterns can selectively trap 2D-chiral particles and generate particle motion similar to non-equilibrium Brownian ratchets. These findings provide new opportunities for nanotechnological applications requiring precise positioning and orientation of microscopic objects.
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Affiliation(s)
- Gan Wang
- Department of Physics, University of Gothenburg, SE-41296, Gothenburg, Sweden
| | - Piotr Nowakowski
- Max Planck Institute for Intelligent Systems, Heisenbergstraße 3, D-70569, Stuttgart, Germany
- IV th Institute for Theoretical Physics, University of Stuttgart, Pfaffenwaldring 57, D-70569, Stuttgart, Germany
- Group of Computational Life Sciences, Division of Physical Chemistry, Ruđer Bošković Institute, Bijenička cesta 54, 10000, Zagreb, Croatia
| | - Nima Farahmand Bafi
- Max Planck Institute for Intelligent Systems, Heisenbergstraße 3, D-70569, Stuttgart, Germany
- IV th Institute for Theoretical Physics, University of Stuttgart, Pfaffenwaldring 57, D-70569, Stuttgart, Germany
- Institute of Physical Chemistry, Polish Academy of Sciences, 01-224, Warsaw, Poland
| | - Benjamin Midtvedt
- Department of Physics, University of Gothenburg, SE-41296, Gothenburg, Sweden
| | - Falko Schmidt
- Nanophotonic Systems Laboratory, Department of Mechanical and Process Enginnering, ETH Zürich, CH-8092, Zürich, Switzerland
| | - Agnese Callegari
- Department of Physics, University of Gothenburg, SE-41296, Gothenburg, Sweden
| | - Ruggero Verre
- Department of Physics, Chalmers University of Technology, SE-41296, Gothenburg, Sweden
| | - Mikael Käll
- Department of Physics, Chalmers University of Technology, SE-41296, Gothenburg, Sweden
| | - S Dietrich
- Max Planck Institute for Intelligent Systems, Heisenbergstraße 3, D-70569, Stuttgart, Germany
- IV th Institute for Theoretical Physics, University of Stuttgart, Pfaffenwaldring 57, D-70569, Stuttgart, Germany
| | - Svyatoslav Kondrat
- Max Planck Institute for Intelligent Systems, Heisenbergstraße 3, D-70569, Stuttgart, Germany.
- IV th Institute for Theoretical Physics, University of Stuttgart, Pfaffenwaldring 57, D-70569, Stuttgart, Germany.
- Institute of Physical Chemistry, Polish Academy of Sciences, 01-224, Warsaw, Poland.
- Institute for Computational Physics, University of Stuttgart, Allmandring 3, D-70569, Stuttgart, Germany.
| | - Giovanni Volpe
- Department of Physics, University of Gothenburg, SE-41296, Gothenburg, Sweden.
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2
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Chen Y, Yang X, Fan X, Kang A, Kong X, Chen G, Zhong C, Lu Y, Fan Y, Hou X, Wu T, Chen Z, Wang S, Lin Y. Electrohydrodynamic Inkjet Printing of Three-Dimensional Perovskite Nanocrystal Arrays for Full-Color Micro-LED Displays. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38706177 DOI: 10.1021/acsami.4c02594] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2024]
Abstract
Perovskite nanocrystal (PeNC) arrays are showing a promising future in the next generation of micro-light-emitting-diode (micro-LED) displays due to the narrow emission linewidth and adjustable peak wavelength. Electrohydrodynamic (EHD) inkjet printing, with merits of high resolution, uniformity, versatility, and cost-effectiveness, is among the competent candidates for constructing PeNC arrays. However, the fabrication of red light-emitting CsPbBrxI(3-x) nanocrystal arrays for micro-LED displays still faces challenges, such as low brightness and poor stability. This work proposes a design for a red PeNC colloidal ink that is specialized for the EHD inkjet printing of three-dimensional PeNC arrays with enhanced luminescence and stability as well as being adaptable to both rigid and flexible substrates. Made of a mixture of PeNCs, polymer polystyrene (PS), and a nonpolar xylene solvent, the PeNC colloidal ink enables precise control of array sizes and shapes, which facilitates on-demand micropillar construction. Additionally, the inclusion of PS significantly increases the brightness and environmental stability. By adopting this ink, the EHD printer successfully fabricated full-color 3D PeNC arrays with a spatial resolution over 2500 ppi. It shows the potential of the EHD inkjet printing strategy for high-resolution and robust PeNC color conversion layers for micro-LED displays.
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Affiliation(s)
- Yihang Chen
- Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, Fujian, China
- State Key Laboratory of Physical Chemistry of Solid Surface, Xiamen University, Xiamen 361005, Fujian, China
| | - Xiao Yang
- Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, Fujian, China
- State Key Laboratory of Physical Chemistry of Solid Surface, Xiamen University, Xiamen 361005, Fujian, China
- Institute of Electromagnetics and Acoustics, School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, Fujian, China
| | - Xiaotong Fan
- Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, Fujian, China
- State Key Laboratory of Physical Chemistry of Solid Surface, Xiamen University, Xiamen 361005, Fujian, China
| | - Ao Kang
- Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, Fujian, China
- State Key Laboratory of Physical Chemistry of Solid Surface, Xiamen University, Xiamen 361005, Fujian, China
| | - Xuemin Kong
- Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, Fujian, China
- State Key Laboratory of Physical Chemistry of Solid Surface, Xiamen University, Xiamen 361005, Fujian, China
| | - Guolong Chen
- Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, Fujian, China
- State Key Laboratory of Physical Chemistry of Solid Surface, Xiamen University, Xiamen 361005, Fujian, China
| | - Chenming Zhong
- Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, Fujian, China
- State Key Laboratory of Physical Chemistry of Solid Surface, Xiamen University, Xiamen 361005, Fujian, China
| | - Yijun Lu
- Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, Fujian, China
- State Key Laboratory of Physical Chemistry of Solid Surface, Xiamen University, Xiamen 361005, Fujian, China
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen 361005, Fujian, China
| | - Yi Fan
- State Key Laboratory of Physical Chemistry of Solid Surface, Xiamen University, Xiamen 361005, Fujian, China
- College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, Fujian, China
| | - Xu Hou
- State Key Laboratory of Physical Chemistry of Solid Surface, Xiamen University, Xiamen 361005, Fujian, China
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen 361005, Fujian, China
- College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, Fujian, China
| | - Tingzhu Wu
- Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, Fujian, China
- State Key Laboratory of Physical Chemistry of Solid Surface, Xiamen University, Xiamen 361005, Fujian, China
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen 361005, Fujian, China
| | - Zhong Chen
- Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, Fujian, China
- State Key Laboratory of Physical Chemistry of Solid Surface, Xiamen University, Xiamen 361005, Fujian, China
- Institute of Electromagnetics and Acoustics, School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, Fujian, China
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen 361005, Fujian, China
| | - Shuli Wang
- Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, Fujian, China
- State Key Laboratory of Physical Chemistry of Solid Surface, Xiamen University, Xiamen 361005, Fujian, China
| | - Yue Lin
- Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, Fujian, China
- State Key Laboratory of Physical Chemistry of Solid Surface, Xiamen University, Xiamen 361005, Fujian, China
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen 361005, Fujian, China
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Luo W, Yan X, Pan X, Jiao J, Mai L. What Makes On-Chip Microdevices Stand Out in Electrocatalysis? SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305020. [PMID: 37875658 DOI: 10.1002/smll.202305020] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Revised: 09/03/2023] [Indexed: 10/26/2023]
Abstract
Clean and sustainable energy conversion and storage through electrochemistry shows great promise as an alternative to traditional fuel or fossil-consumption energy systems. With regards to practical and high-efficient electrochemistry application, the rational design of active sites and the accurate description of mechanism remain a challenge. Toward this end, in this Perspective, a unique on-chip micro/nano device coupling nanofabrication and low-dimensional electrochemical materials is presented, in which material structure analysis, field-effect regulation, in situ monitoring, and simulation modeling are highlighted. The critical mechanisms that influence electrochemical response are discussed, and how on-chip micro/nano device distinguishes itself is emphasized. The key challenges and opportunities of on-chip electrochemical platforms are also provided through the Perspective.
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Affiliation(s)
- Wen Luo
- Department of Physics, School of Science, Wuhan University of Technology, Wuhan, 430070, China
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
| | - Xin Yan
- Department of Physics, School of Science, Wuhan University of Technology, Wuhan, 430070, China
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
| | - Xuelei Pan
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
- Wolfson Catalysis Centre, Department of Chemistry, University of Oxford, Oxford, OX1 3QR, UK
| | - Jinying Jiao
- Department of Physics, School of Science, Wuhan University of Technology, Wuhan, 430070, China
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
| | - Liqiang Mai
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
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4
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Babar AN, Weis TAS, Tsoukalas K, Kadkhodazadeh S, Arregui G, Vosoughi Lahijani B, Stobbe S. Self-assembled photonic cavities with atomic-scale confinement. Nature 2023; 624:57-63. [PMID: 38057568 PMCID: PMC10700130 DOI: 10.1038/s41586-023-06736-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/27/2023] [Accepted: 10/10/2023] [Indexed: 12/08/2023]
Abstract
Despite tremendous progress in research on self-assembled nanotechnological building blocks, such as macromolecules1, nanowires2 and two-dimensional materials3, synthetic self-assembly methods that bridge the nanoscopic to macroscopic dimensions remain unscalable and inferior to biological self-assembly. By contrast, planar semiconductor technology has had an immense technological impact, owing to its inherent scalability, yet it seems unable to reach the atomic dimensions enabled by self-assembly. Here, we use surface forces, including Casimir-van der Waals interactions4, to deterministically self-assemble and self-align suspended silicon nanostructures with void features well below the length scales possible with conventional lithography and etching5, despite using only conventional lithography and etching. The method is remarkably robust and the threshold for self-assembly depends monotonically on all the governing parameters across thousands of measured devices. We illustrate the potential of these concepts by fabricating nanostructures that are impossible to make with any other known method: waveguide-coupled high-Q silicon photonic cavities6,7 that confine telecom photons to 2 nm air gaps with an aspect ratio of 100, corresponding to mode volumes more than 100 times below the diffraction limit. Scanning transmission electron microscopy measurements confirm the ability to build devices with sub-nanometre dimensions. Our work constitutes the first steps towards a new generation of fabrication technology that combines the atomic dimensions enabled by self-assembly with the scalability of planar semiconductors.
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Affiliation(s)
- Ali Nawaz Babar
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby, Denmark.
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Kongens Lyngby, Denmark.
| | - Thor August Schimmell Weis
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby, Denmark
| | - Konstantinos Tsoukalas
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby, Denmark
| | - Shima Kadkhodazadeh
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Kongens Lyngby, Denmark
- DTU Nanolab, Technical University of Denmark, Kongens Lyngby, Denmark
| | - Guillermo Arregui
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby, Denmark
| | - Babak Vosoughi Lahijani
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Kongens Lyngby, Denmark
| | - Søren Stobbe
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby, Denmark.
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Kongens Lyngby, Denmark.
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5
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Park SH, Kim TJ, Lee HE, Ma BS, Song M, Kim MS, Shin JH, Lee SH, Lee JH, Kim YB, Nam KY, Park HJ, Kim TS, Lee KJ. Universal selective transfer printing via micro-vacuum force. Nat Commun 2023; 14:7744. [PMID: 38008810 PMCID: PMC10679119 DOI: 10.1038/s41467-023-43342-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Accepted: 11/07/2023] [Indexed: 11/28/2023] Open
Abstract
Transfer printing of inorganic thin-film semiconductors has attracted considerable attention to realize high-performance soft electronics on unusual substrates. However, conventional transfer technologies including elastomeric transfer printing, laser-assisted transfer, and electrostatic transfer still have challenging issues such as stamp reusability, additional adhesives, and device damage. Here, a micro-vacuum assisted selective transfer is reported to assemble micro-sized inorganic semiconductors onto unconventional substrates. 20 μm-sized micro-hole arrays are formed via laser-induced etching technology on a glass substrate. The vacuum controllable module, consisting of a laser-drilled glass and hard-polydimethylsiloxane micro-channels, enables selective modulation of micro-vacuum suction force on microchip arrays. Ultrahigh adhesion switchability of 3.364 × 106, accomplished by pressure control during the micro-vacuum transfer procedure, facilitates the pick-up and release of thin-film semiconductors without additional adhesives and chip damage. Heterogeneous integration of III-V materials and silicon is demonstrated by assembling microchips with diverse shapes and sizes from different mother wafers on the same plane. Multiple selective transfers are implemented by independent pressure control of two separate vacuum channels with a high transfer yield of 98.06%. Finally, flexible micro light-emitting diodes and transistors with uniform electrical/optical properties are fabricated via micro-vacuum assisted selective transfer.
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Affiliation(s)
- Sang Hyun Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Tae Jin Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Han Eol Lee
- Division of Advanced Materials Engineering, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju-si, Jeollabuk-do, 54896, Republic of Korea
| | - Boo Soo Ma
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Myoung Song
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Min Seo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Jung Ho Shin
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Seung Hyung Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Jae Hee Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Young Bin Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Ki Yun Nam
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Hong-Jin Park
- BSP Co., Ltd., 41-4, 170 Burim-ro, Dongan-gu, Anyang-si, Gyeonggi-do, 14055, Republic of Korea
| | - Taek-Soo Kim
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Keon Jae Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
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Chen F, Gai M, Sun N, Xu Z, Liu L, Yu H, Bian J, Huang Y. Laser-driven hierarchical "gas-needles" for programmable and high-precision proximity transfer printing of microchips. SCIENCE ADVANCES 2023; 9:eadk0244. [PMID: 37889973 PMCID: PMC10610906 DOI: 10.1126/sciadv.adk0244] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2023] [Accepted: 09/25/2023] [Indexed: 10/29/2023]
Abstract
Micro-transfer printing (μTP) techniques are essential for advanced electronics. However, current contact/noncontact μTP techniques fail to simultaneously achieve high selectivity and transfer accuracy. Here, a laser projection proximity transfer (LaserPPT) technique is presented, which assembles the microchips in an approach-and-release manner, combining high-precision parallelism with individual chip control. An embedded carbon layer with a thin gas layer is generated by an ultraviolet laser, followed by absorbing heat from the infrared laser, to enable the sequential expansion of hierarchical "gas-needles." The level 1 large gas-needle with a substantially growing height can reduce the gap between the microchip and the receiver. Then, the level 2 small gas-needles enable the gentle release of a chip. Therefore, the LaserPPT can obtain a strong adhesion modulation (~1000 times), excellent size scalability (<100 micrometers), and high transfer accuracy of ~4 micrometers. Last, the assembly of a micro-light-emitting diode display demonstrates the capabilities for deterministic assembly of microarrays.
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Affiliation(s)
- Furong Chen
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
| | - Mengxin Gai
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
| | - Ningning Sun
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
| | - Zhangyu Xu
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
| | - Lei Liu
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
| | - Haiyang Yu
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
| | - Jing Bian
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
- College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology), National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - YongAn Huang
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
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