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S A, Amaladass EP, Amirthapandian S, David C, Mani A. The effect of charged particle irradiation on the transport properties of bismuth chalcogenide topological insulators: a brief review. Phys Chem Chem Phys 2024; 26:2745-2767. [PMID: 38179833 DOI: 10.1039/d3cp02462h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
Topological insulators (TIs) offer a novel platform for achieving exciting applications, such as low-power electronics, spintronics, and quantum computation. Hence, the spin-momentum locked and topologically nontrivial surface state of TIs is highly coveted by the research and development industry. Particle irradiation in TIs is a fast-growing field of research owing to the industrial scalability of the particle irradiation technique. Unfortunately, real three-dimensional TI materials, such as bismuth selenide, invariably host a significant population of charged native defects, which cause the ideally insulating bulk to behave like a metal, masking the relatively weak signatures of metallic topological surface states. Particle irradiation has emerged as an effective technique for Fermi energy tuning to achieve an insulating bulk in TI along with other popularly practiced methods, such as substitution doping and electrical gating. Irradiation methods have been used for many years to enhance the thermoelectric properties of bismuth chalcogenides, predominantly by increasing carrier density. In contrast, uncovering the surface states in bismuth-based TI requires the suppression of carrier density via particle irradiation. Hence, the literature on the effect of irradiation on bismuth chalcogenides extends widely to both ends of the spectrum (thermoelectric and topological properties). This review attempts to collate the available literature on particle irradiation-driven Fermi energy tuning and the modification of topological surface states in TI. Recent studies on particle irradiation in TI have focused on precise local modifications in the TI system to induce magnetic topological ordering and surface selective topological superconductivity. Promising proposals for TI-integrated circuits have also been put forth. The eclectic range of irradiation-based studies on TI has been reviewed in this manuscript.
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Affiliation(s)
- Abhirami S
- Materials Science Group, Indira Gandhi Center for Atomic Research, Kalpakkam-603102, Tamil Nadu, India.
- Homi Bhabha National Institute, Training School Complex, Anushaktinagar, Mumbai-400094, India
| | - E P Amaladass
- Materials Science Group, Indira Gandhi Center for Atomic Research, Kalpakkam-603102, Tamil Nadu, India.
- Homi Bhabha National Institute, Training School Complex, Anushaktinagar, Mumbai-400094, India
| | - S Amirthapandian
- Materials Science Group, Indira Gandhi Center for Atomic Research, Kalpakkam-603102, Tamil Nadu, India.
- Homi Bhabha National Institute, Training School Complex, Anushaktinagar, Mumbai-400094, India
| | - C David
- Materials Science Group, Indira Gandhi Center for Atomic Research, Kalpakkam-603102, Tamil Nadu, India.
| | - Awadhesh Mani
- Materials Science Group, Indira Gandhi Center for Atomic Research, Kalpakkam-603102, Tamil Nadu, India.
- Homi Bhabha National Institute, Training School Complex, Anushaktinagar, Mumbai-400094, India
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Padmanathan N, Lal S, Gautam D, Razeeb KM. Amorphous Framework in Electrodeposited CuBiTe Thermoelectric Thin Films with High Room-Temperature Performance. ACS APPLIED ELECTRONIC MATERIALS 2021; 3:1794-1803. [PMID: 35156045 PMCID: PMC8824429 DOI: 10.1021/acsaelm.1c00063] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2021] [Accepted: 03/26/2021] [Indexed: 06/14/2023]
Abstract
Bismuth telluride-based alloys are the most efficient thermoelectric materials near room temperature and widely used in commercial thermoelectric devices. Nevertheless, their thermoelectric performance needs to be improved further for wide-scale implementation either as a thermoelectric generator or cooler. Here, we propose a simultaneous codeposition of CuBiTe thin films and their phase transition strategy via the traditional electrodeposition process. With just 13 atom % Cu doping, crystalline-to-amorphous phase transformation resulted for the electroplated CuBiTe alloy. A close look at the alloy composition revealed spike-shaped nanocrystalline Bi2Te3 embedded in the CuBiTe amorphous matrix. Our result shows an exceptionally high power factor (3.02 mW m-1 K-2), which comes from the enhanced Seebeck coefficient (-275 μV K-1) and high electrical conductivity (3.99 × 104 S m-1) of CuBiTe films. Therefore, it can be suggested that the adopted strategy to form a unique nanocrystallite-embedded amorphous framework provides a platform to develop next-generation high-performance thermoelectric materials with an extraordinary power factor.
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Affiliation(s)
- N. Padmanathan
- Micro-Nano
Systems Centre, Tyndall National Institute,
University College Cork, Dyke Parade, Lee Maltings, Cork T12 R5CP, Ireland
- Department
of Physics, Karpagam Academy of Higher Education, Coimbatore, Tamilnadu 641021, India
| | - Swatchith Lal
- Micro-Nano
Systems Centre, Tyndall National Institute,
University College Cork, Dyke Parade, Lee Maltings, Cork T12 R5CP, Ireland
| | - Devendraprakash Gautam
- Micro-Nano
Systems Centre, Tyndall National Institute,
University College Cork, Dyke Parade, Lee Maltings, Cork T12 R5CP, Ireland
| | - Kafil M. Razeeb
- Micro-Nano
Systems Centre, Tyndall National Institute,
University College Cork, Dyke Parade, Lee Maltings, Cork T12 R5CP, Ireland
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Leedahl B, McCloskey DJ, Boukhvalov DW, Zhidkov IS, Kukharenko AI, Kurmaev EZ, Cholakh SO, Gavrilov NV, Brinzari VI, Moewes A. Fundamental crystal field excitations in magnetic semiconductor SnO 2: Mn, Fe, Co, Ni. Phys Chem Chem Phys 2019; 21:11992-11998. [PMID: 31134978 DOI: 10.1039/c9cp01516g] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Directly measuring elementary electronic excitations in dopant 3d metals is essential to understanding how they function as part of their host material. Through calculated crystal field splittings of the 3d electron band it is shown how transition metals Mn, Fe, Co, and Ni are incorporated into SnO2. The crystal field splittings are compared to resonant inelastic X-ray scattering (RIXS) experiments, which measure precisely these elementary dd excitations. The origin of spectral features can be determined and identified via this comparison, leading to an increased understanding of how such dopant metals situate themselves in, and modify the host's electronic and magnetic properties; and also how each element differs when incorporated into other semiconducting materials. We found that oxygen vacancy formation must not occur at nearest neighbour sites to metal atoms, but instead must reside at least two coordination spheres beyond. The coordination of the dopants within the host can then be explicitly related to the d-electron configurations and energies. This approach facilitates an understanding of the essential link between local crystal coordination and electronic/magnetic properties.
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Affiliation(s)
- B Leedahl
- Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, Saskatchewan S7N 5E2, Canada.
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