Generating Localized Plasmonic Fields on an Integrated Photonic Platform using Tapered Couplers for Biosensing Applications

Integrated Nanophotonic Waveguide-Based Devices for IR and Raman Gas Spectroscopy

On-chip devices for absorption spectroscopy and Raman spectroscopy have been developing rapidly in the last few years, triggered by the growing availability of compact and affordable tunable lasers, detectors, and on-chip spectrometers. Material processing that is compatible with mass production has been proven to be capable of long low-loss waveguides of sophisticated designs, which are indispensable for high-light-analyte interactions. Sensitivity and selectivity have been further improved by the development of sorbent cladding. In this review, we discuss the latest advances and challenges in the field of waveguide-enhanced Raman spectroscopy (WERS) and waveguide infrared absorption spectroscopy (WIRAS). The development of integrated light sources and detectors toward miniaturization will be presented, together with the recent advances on waveguides and cladding to improve sensitivity. The latest reports on gas-sensing applications and main configurations for WERS and WIRAS will be described, and the most relevant figures of merit and limitations of different sensor realizations summarized.

Compact hybrid plasmonic slot waveguide sensor with a giant enhancement factor for surface-enhanced Raman scattering application

In this paper, a surface-enhanced Raman scattering (SERS) sensor with a giant field enhancement factor based on the coupling of surface plasmon polaritons (SPPs) is designed and studied theoretically. The proposed sensor adopts a metal-dielectric layered hybrid slot waveguide structure, combining thin metal (gold) layers and silicon nitride strip waveguides. Unlike other similar sensors, the silicon nitride waveguide structure does not serve as an excitation signal channel, conventionally loaded with the guided modes, but as an auxiliary layer, making it easier to concentrate the light field in the slot. Therefore, the sensor has a higher enhancement factor compared to the pure metal or dielectric slot structure. The results exhibit that we can obtain a maximum enhancement factor exceeding 10^6 under the compact configuration of 510 × 300 × 225nm^3 at the wavelength of 785 nm. By analyzing the dependence of the sensor performance on the structural parameters, we show that the structure of such sensor can directly be applied to SERS spectroscopic analysis as well as integrated with micro-and nano-photonic platform to perform on-chip detection system.

Hybrid plasmonic grating slot waveguide with high field enhancement for an on-chip surface-enhanced Raman scattering sensor

We design and theoretically investigate a surface-enhanced Raman scattering (SERS) sensor based on the hybrid plasmonic grating slot waveguide. The sensor is formed by combining a dielectric deep slot waveguide and a metallic grating slot waveguide. The proposed sensor exhibits a high field enhancement with a maximum enhancement factor of 7580.9 at the wavelength of 785 nm, revealing that the electric field in such hybrid plasmonic grating slot waveguide can be extremely strengthened. To better characterize the performance of the sensor in the SERS application, the total normalized volumetric enhancement factor (TNVEF) is proposed, which is determined by both the |E|⁴-approximation-based volumetric field enhancement and Raman scattered light collection efficiency. The TNVEF is utilized to characterize the influences of the structural parameters on the sensor and further optimize the sensing structure. Such on-chip SERS sensor can be integrated with a micro-laser and a micro-multiplexer on a photonic platform to realize an all-integrated on-chip SERS detection system.

Directional emission of plastic luminescent films using photonic crystals fabricated by soft-X-ray interference lithography and reactive ion etching

In this report, a novel method to prepare photonic crystals based on the combination of soft-X-ray interference lithography (XIL) and reactive ion etching (RIE) with a bi-layer photoresist system was developed. XIL can be utilized to prepare periodic structures with high efficiency but the depth of etch is limited due to the strong absorption of photoresist for soft-X-ray. Based on the pattern prepared by XIL, RIE can be utilized to further etch a second layer of photoresist, so that one can obtain a large depth of etch. Controlling the dispersion relation of the prepared photonic crystals, strongly directional emission of plastic luminescent films was demonstrated. A wavelength-integrated enhancement of 2.64-folds enhancement in the range of 420 to 440 nm in the normal direction was obtained. Guided-mode resonance and Fabry-Perot resonance could be the critical factors to control the directional emission. Devices based on directional emission films have a variety of applications in such as detectors, optical communication and display screens.