Observation of carrier localization in cubic crystalline Ge2Sb2Te5 by field effect measurement

Application of Ge2Sb2Te5 phase change film in flexible memory

The development of high-performance flexible memory is of great significance to today's rapidly growing Internet of Things market. In this paper, Ge2Sb2Te5 phase change films were prepared by magnetron sputtering...

Phase change thin films for non-volatile memory applications

The rapid development of Internet of Things devices requires real time processing of a huge amount of digital data, creating a new demand for computing technology. Phase change memory technology based on chalcogenide phase change materials meets many requirements of the emerging memory applications since it is fast, scalable and non-volatile. In addition, phase change memory offers multilevel data storage and can be applied both in neuro-inspired and all-photonic in-memory computing. Furthermore, phase change alloys represent an outstanding class of functional materials having a tremendous variety of industrially relevant characteristics and exceptional material properties. Many efforts have been devoted to understanding these properties with the particular aim to design universal memory. This paper reviews materials science aspects of chalcogenide-based phase change thin films relevant for non-volatile memory applications. Particular emphasis is put on local structure, control of disorder and its impact on material properties, order-disorder transitions and interfacial transformations.