Short-period scattering-assisted terahertz quantum cascade lasers operating at high temperatures

Terahertz quantum cascade lasers employing convex phonon well

The 3-level resonant-phonon scheme, a predominant approach for achieving high-temperature operation in terahertz quantum cascade lasers, has recently gained conspicuous progress by purifying the lasing of relevant quantum levels from nonrelevant ones. However, as this 3-level system typically relies on a module architecture with only two quantum wells, the engineering flexibility is limited; for instance, the transparency of injector barriers for the resonant tunneling process is sacrificed to balance the trade-offs between injection selectivity and parasitic leakages through nonrelevant levels. This study presents the convex phonon well concept to expand engineering possibilities for levels of purification. The effectiveness of this concept is initially confirmed by observing lasing at 201 K in experiments.

M-plane GaN terahertz quantum cascade laser structure design and doping effect for resonant-phonon and phonon-scattering-injection schemes

Non-polar m-plane GaN terahertz quantum cascade laser (THz-QCL) structures have been studied. One is traditional three-well resonant-phonon (RP) design scheme. The other is two-well phonon scattering injection (PSI) design scheme. The peak gains of 41.8 and 44.2 cm^-1 have been obtained at 8.2 and 7.7 THz respectively at 300 K according to the self-consistent non-equilibrium Green's function calculation. Different from the usual GaAs two-well design, the upper and lower lasing levels are both ground states in the GaN quantum wells for the PSI scheme, mitigating the severe broadening effect for the excited states in GaN. To guide the fabrication of such devices, the doping effect on the peak gain has been analyzed. The two designs have demonstrated distinct doping density dependence and it is mainly attributed to the very different doping dependent broadening behaviors. The results reveal the possibility of GaN based THz-QCL lasing at room temperature.

Diabetes complications and extracellular vesicle therapy

Diabetes is a chronic disorder characterized by dysregulated glycemic conditions. Diabetic complications include microvascular and macrovascular abnormalities and account for high morbidity and mortality rates in patients. Current clinical approaches for diabetic complications are limited to symptomatic treatments and tight control of blood sugar levels. Extracellular vesicles (EVs) released by somatic and stem cells have recently emerged as a new class of potent cell-free therapeutic delivery packets with a great potential to treat diabetic complications. EVs contain a mixture of bioactive molecules and can affect underlying pathological processes in favor of tissue healing. In addition, EVs have low immunogenicity and high storage capacity while maintaining nearly the same regenerative and immunomodulatory effects compared to current cell-based therapies. Therefore, EVs have received increasing attention for diabetes-related complications in recent years. In this review, we provide an outlook on diabetic complications and summarizes new knowledge and advances in EV applications. Moreover, we highlight recommendations for future EV-related research.

Theoretical Study of Quasi One-Well Terahertz Quantum Cascade Laser

Developing a high-temperature terahertz (THz) quantum cascade laser (QCL) has been one of the major challenges in the THz QCL field over recent decades. The maximum lasing temperature of THz QCLs has gradually been increased, arguably by shortening the length of repeating periods of the quantum structure in the device’s active region from 7 wells/14 layers to 2 wells/4 layers per period. The current highest operating temperature of 250 K was achieved in a two-well direct-phonon design. In this paper, we propose a potential and promising novel quantum design scheme named the quasi one-well (Q1W) design, in which each quantum cascade period consists of only three semiconductor layers. This design is the narrowest of all existing THz QCL structures to date. We explore a series of the Q1W designs using the non-equilibrium green function (NEGF) and rate-equation (RE) models. Both models show that the Q1W designs exhibit the potential to achieve sufficient optical gain with low-temperature sensitivity. Our simulation results suggest that this novel Q1W scheme may potentially lead to relatively less temperature-sensitive THz QCLs. The thickness of the Q1W scheme is less than 20 nm per period, which is the narrowest of the reported THz QCL schemes.

Dual resonance phonon-photon-phonon terahertz quantum-cascade laser: physics of the electron transport and temperature performance optimization

The state of the art terahertz-frequency quantum cascade lasers have opened a plethora of applications over the past two decades by testing several designs up to the very limit of operating temperature, optical power and lasing frequency performance. The temperature degradation mechanisms have long been under the debate for limiting the operation up to 210 K in pulsed operation in the GaAs/AlGaAs material system. In this work, we review the existing designs and exploit two main temperature degradation mechanisms by presenting a design in which they both prove beneficial to the lasing operation by dual pumping and dual extracting lasing levels. We have applied the density matrix transport model to select potential candidate structures by simulating over two million active region designs. We present several designs which offer better performance than the current record structure.