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Wen Z, Zhang Z, Zhang K, Li J, Shi H, Li M, Hou Y, Xue M, Zhang Z. Large-Scale Wideband Light-Trapping Black Silicon Textured by Laser Inducing Assisted with Laser Cleaning in Ambient Air. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1772. [PMID: 35630993 PMCID: PMC9142894 DOI: 10.3390/nano12101772] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/11/2022] [Revised: 05/20/2022] [Accepted: 05/20/2022] [Indexed: 02/06/2023]
Abstract
Black silicon, which is an attractive material due to its optical properties, is prepared mainly by laser inducing in an SF6 atmosphere. Considering the effect of SF6 gas on the environment and human health, here we propose an efficient, economical, and green approach to process large-scale black silicon. In the wavelength range of 0.3-2.5 µm, the role of air could replace SF6 gas to texture black silicon by laser inducing with appropriate processing parameters. Then, to extend the working window of its excellent light-trapping status, laser-plasma shockwave cleaning was introduced to eliminate the deposition and improve the structures and morphology. The results revealed that the micro-nano structures became higher, denser, and more uniform with increasing cleaning times and deteriorating cleaning velocity, which compensated for the role of S atoms from the ambient SF6. Moreover, absorptance above 85% in the wavelength range of 0.3-15 µm was realized using our method. The effect of scanning pitch between adjacent rows on large-scale black silicon was also discussed. Our method realized the ultrahigh absorptance of large-scale black silicon fabricated in air from visible to mid-infrared, which is of significance in the field of optoelectronic devices.
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Affiliation(s)
- Zhidong Wen
- Microelectronics Instruments and Equipment R & D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (Z.W.); (Z.Z.); (K.Z.); (H.S.); (M.L.); (M.X.)
- School of Integrated Circuits, University of Chinese Academy of Sciences, No. 19 (A) Yuquan Road, Beijing 100049, China
| | - Zhe Zhang
- Microelectronics Instruments and Equipment R & D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (Z.W.); (Z.Z.); (K.Z.); (H.S.); (M.L.); (M.X.)
- School of Integrated Circuits, University of Chinese Academy of Sciences, No. 19 (A) Yuquan Road, Beijing 100049, China
| | - Kunpeng Zhang
- Microelectronics Instruments and Equipment R & D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (Z.W.); (Z.Z.); (K.Z.); (H.S.); (M.L.); (M.X.)
| | - Jiafa Li
- Focal Plane Division, The 11th Research Institute of China Electronics Technology Corporation, Beijing 100846, China;
| | - Haiyan Shi
- Microelectronics Instruments and Equipment R & D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (Z.W.); (Z.Z.); (K.Z.); (H.S.); (M.L.); (M.X.)
| | - Man Li
- Microelectronics Instruments and Equipment R & D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (Z.W.); (Z.Z.); (K.Z.); (H.S.); (M.L.); (M.X.)
| | - Yu Hou
- Microelectronics Instruments and Equipment R & D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (Z.W.); (Z.Z.); (K.Z.); (H.S.); (M.L.); (M.X.)
| | - Mei Xue
- Microelectronics Instruments and Equipment R & D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (Z.W.); (Z.Z.); (K.Z.); (H.S.); (M.L.); (M.X.)
| | - Zichen Zhang
- Microelectronics Instruments and Equipment R & D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (Z.W.); (Z.Z.); (K.Z.); (H.S.); (M.L.); (M.X.)
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Malik S, Marchesan S. Growth, Properties, and Applications of Branched Carbon Nanostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2728. [PMID: 34685169 PMCID: PMC8540255 DOI: 10.3390/nano11102728] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 10/07/2021] [Accepted: 10/12/2021] [Indexed: 12/19/2022]
Abstract
Nanomaterials featuring branched carbon nanotubes (b-CNTs), nanofibers (b-CNFs), or other types of carbon nanostructures (CNSs) are of great interest due to their outstanding mechanical and electronic properties. They are promising components of nanodevices for a wide variety of advanced applications spanning from batteries and fuel cells to conductive-tissue regeneration in medicine. In this concise review, we describe the methods to produce branched CNSs, with particular emphasis on the most widely used b-CNTs, the experimental and theoretical studies on their properties, and the wide range of demonstrated and proposed applications, highlighting the branching structural features that ultimately allow for enhanced performance relative to traditional, unbranched CNSs.
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Affiliation(s)
- Sharali Malik
- Karlsruhe Institute of Technology, Institute of Quantum Materials and Technology, Hermann-von-Helmholtz-Platz 1, 76131 Karlsruhe, Germany
| | - Silvia Marchesan
- Department of Chemical and Pharmaceutical Sciences, University of Trieste, Via L. Giorgieri 1, 34127 Trieste, Italy;
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Fan Z, Cui D, Zhang Z, Zhao Z, Chen H, Fan Y, Li P, Zhang Z, Xue C, Yan S. Recent Progress of Black Silicon: From Fabrications to Applications. NANOMATERIALS 2020; 11:nano11010041. [PMID: 33375303 PMCID: PMC7823726 DOI: 10.3390/nano11010041] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/19/2020] [Revised: 12/23/2020] [Accepted: 12/23/2020] [Indexed: 01/08/2023]
Abstract
Since black silicon was discovered by coincidence, the special material was explored for many amazing material characteristics in optical, surface topography, and so on. Because of the material property, black silicon is applied in many spheres of a photodetector, photovoltaic cell, photo-electrocatalysis, antibacterial surfaces, and sensors. With the development of fabrication technology, black silicon has expanded in more and more applications and has become a research hotspot. Herein, this review systematically summarizes the fabricating method of black silicon, including nanosecond or femtosecond laser irradiation, metal-assisted chemical etching (MACE), reactive ion etching (RIE), wet chemical etching, electrochemical method, and plasma immersion ion implantation (PIII) methods. In addition, this review focuses on the progress in multiple black silicon applications in the past 10 years. Finally, the prospect of black silicon fabricating and various applications are outlined.
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Affiliation(s)
- Zheng Fan
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
| | - Danfeng Cui
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
| | - Zengxing Zhang
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
| | - Zhou Zhao
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
| | - Hongmei Chen
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
| | - Yanyun Fan
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
| | - Penglu Li
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
| | - Zhidong Zhang
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
| | - Chenyang Xue
- Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China; (Z.F.); (D.C.); (Z.Z.); (Z.Z.); (H.C.); (Y.F.); (P.L.); (Z.Z.)
- Correspondence: (C.X.); (S.Y.)
| | - Shubin Yan
- The School of Electrical Engineering, Zhejiang University of Water Resources and Electric Power, Hangzhou 310018, China
- Zhejiang-Belarus Joint Laboratory of Intelligent Equipment and System for Water Conservancy and Hydropower Safety Monitoring, Zhejiang University of Water Resources and Electric Power, Hangzhou 310018, China
- Correspondence: (C.X.); (S.Y.)
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Pedrini J, Biagioni P, Ballabio A, Barzaghi A, Bonzi M, Bonera E, Isella G, Pezzoli F. Broadband control of the optical properties of semiconductors through site-controlled self-assembly of microcrystals. OPTICS EXPRESS 2020; 28:24981-24990. [PMID: 32907029 DOI: 10.1364/oe.398098] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2020] [Accepted: 07/21/2020] [Indexed: 06/11/2023]
Abstract
We investigate light-matter interactions in periodic silicon microcrystals fabricated combining top-down and bottom-up strategies. The morphology of the microcrystals, their periodic arrangement, and their high refractive index allow the exploration of photonic effects in microstructured architectures. We observe a notable decrease in reflectivity above the silicon bandgap from the ultraviolet to the near-infrared. Finite-difference time-domain simulations show that this phenomenon is accompanied by a ∼2-fold absorption enhancement with respect to a flat sample. Finally, we demonstrate that ordered silicon microstructures enable a fine tuning of the light absorption by changing experimentally accessible knobs as pattern and growth parameters. This work will facilitate the implementation of optoelectronic devices based on high-density microcrystals arrays with optimized light-matter interactions.
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