Crystallization of ZnO thin films via thermal dissipation annealing method for high-performance UV photodetector with ultrahigh response speed

Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method

Owing to the ultra-wide bandgap energy, high thermal conductivity, and ambipolar capability, GeO2 films are receiving great attention for potential applications in power devices and solar-blind photodetectors. However, the precise control of the crystal structure and optical property is a huge challenge due to close free formation energies of multiple phases, inhibiting the GeO2 based practical device applications. Here, we have fabricated quartz and rutile-GeO2 thin films utilizing the magnetron sputtering based synthetic strategy, which exhibit ultra-wide bandgap energies of 5.51 and 5.88 eV. On the foundation of these ultra-wide bandgap semiconductors, obvious photoresponse characteristics have been achieved at 213 nm and the quartz-GeO2 device exhibits better performances including a short fall time of 148.5 ms, a high photo-dark current ratio of 86.65, large photoresponsivity of 4.56 A/W, and high detectivity of 6.78 × 1013 Jones, which can be attributed to the less oxygen defect exists in the quartz-GeO2 film due to the oxygen-rich growth condition and the better lattice matching with sapphire. Our findings suggest that the GeO2 thin film is a candidate material for optoelectronic device applications and will provide a facile and innovative strategy to develop the solar-blind photodetector.

Understanding the nanoscale phenomena of nucleation and crystal growth in electrodeposition

Electrodeposition is used at the industrial scale to make coatings, membranes, and composites. With better understanding of the nanoscale phenomena associated with the early stage of the process, electrodeposition has potential to be adopted by manufacturers of energy storage devices, advanced electrode materials, fuel cells, carbon dioxide capturing technologies, and advanced sensing electronics. The ability to conduct precise electrochemical measurements using cyclic voltammetry, chronoamperometry, and chronopotentiometry in addition to control of precursor composition and concentration makes electrocrystallization an attractive method to investigate nucleation and early-stage crystal growth. In this article, we review recent findings of nucleation and crystal growth behaviors at the nanoscale, paying close attention to those that deviate from the classical theories in various electrodeposition systems. The review affirms electrodeposition as a valuable method both for gaining new insights into nucleation and crystallization on surfaces and as a low-cost scalable technology for the manufacturing of advanced materials and devices.

Improved UV Photoresponse Performance of ZnO Nanowire Array Photodetector via Effective Pt Nanoparticle Coupling

Ultraviolet (UV) photodetectors (PDs) based on nanowire (NW) hold significant promise for applications in fire detection, optical communication, and environmental monitoring. As optoelectronic devices evolve towards lower dimensionality, multifunctionality, and integrability, multicolor PDs have become a research hotspot in optics and electronic information. This study investigates the enhancement of detection capability in a light-trapping ZnO NW array through modification with Pt nanoparticles (NPs) via magnetron sputtering and hydrothermal synthesis. The optimized PD exhibits superior performance, achieving a responsivity of 12.49 A/W, detectivity of 4.07 × 1012 Jones, and external quantum efficiency (EQE) of 4.19 × 103%, respectively. In addition, the Pt NPs/ZnO NW/ZnO PD maintains spectral selectivity in the UV region. These findings show the pivotal role of Pt NPs in enhancing photodetection performance through their strong light absorption and scattering properties. This improvement is associated with localized surface plasmon resonance induced by the Pt NPs, leading to enhanced incident light and interfacial charge separation for the specialized configurations of the nanodevice. Utilizing metal NPs for device modification represents a breakthrough that positively affects the preparation of high-performance ZnO-based UV PDs.

Dipole Field-Driven Organic-Inorganic Heterojunction for Highly Sensitive Ultraviolet Photodetector

Developing high-performance organic-inorganic ultraviolet (UV) photodetectors (PDs) has attracted considerable attention. However, this development has been hindered due to poor directional charge-transfer ratios in transport layers, excessive costs, and an ambiguous underlying mechanism. To tackle these challenges, we constructed a heterojunction of economic Mg-doped ZnO (MgZnO) nanorods and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS (P:P)] that utilizes dipole field-driven spontaneous polarization to enhance photogenerated charge kinetics. As a result, the proposed heterojunction has an improved noise equivalent power of 3.16 × 10-11 W Hz-1/2), a normalized detection rate (D*) of 8.96 × 109 jones, and external quantum efficiency comparable to other ZnO-based devices. Notably, the prepared PDs showed a photocurrent of 4.8 × 10-3 μA under a faint UV light having an intensity of 1 × 10-5 W cm-2, exceeding the performance of the most state-of-the-art ZnO-based UV sensors. The introduction of Mg into ZnO is responsible for the high performance, as it causes a lattice mismatch and distortion of the Mg-doped ZnO unit cell. It results in improved dipole movement and the creation of a dipole field, accelerating the directional electron-transfer process. Using a dipole field to manipulate the migration and transport of photogenerated carriers represents a promising approach for achieving outstanding performance in UV PDs.

Particles-Matrix Bond in ZnCoO:H and ZnCoAlO:H Films: Issues of Magnetism and Spin Injection

ZnCoO:H and ZnCoAlO:H films were synthesized by radio frequency magnetron sputtering in a (1 - x)Ar + xH₂ mixed atmosphere with x = 0.2-0.5. The films contain different amounts of metallic Co particles (from 7.6% and higher) ~4-7 nm in size. The magnetic and magneto-optical (MO) behavior of the films was analyzed in combination with their structural data. The samples exhibit high values of magnetization (up to 377 emu/cm³) and MO response at room temperature. Two situations are considered: (1) the film magnetism is associated only with isolated metal particles and (2) magnetism is present both in the oxide matrix and in metal inclusions. It has been established that the formation mechanism of the magnetic structure of ZnO:Co²⁺ is due to the spin-polarized conduction electrons of metal particles and zinc vacancies. It was also found that in the presence of two magnetic components in the films, these components are exchange-coupled. In this case, the exchange coupling generates a high spin polarization of the films. The spin-dependent transport properties of the samples have been studied. A high value of the negative magnetoresistance of the films at room temperature (~4%) was found. This behavior was explained in terms of the giant magnetoresistance model. Thus, the ZnCoO:H and ZnCoAlO:H films with high spin polarization can be considered as sources of spin injection.

Transparent and flexible ZnO nanorods induced by thermal dissipation annealing without polymer substrate deformation for next-generation wearable devices

The fabrication of a transparent and flexible ultraviolet photodetector based on hydrothermally grown ZnO nanorods requires an annealing step to render the sol–gel spin-coated ZnO seed layer crystalline. As high-temperature annealing deforms low-melting-point polymer substrates, we herein devised a thermal dissipation annealing (TDA) method in which heat transfer to ZnO thin films is synchronized with heat release from the polymer substrate to crystallize the ZnO seed layer without polymer substrate deformation and melting. ZnO nanorods (NRs) were hydrothermally grown on non-annealed and annealed ZnO seed layers, and NR density and diameter were shown to be higher in the latter case, as the crystallized ZnO seed layer provided heterogeneous nucleation sites for NR growth. In addition, the larger density and diameter of ZnO NRs grown on the annealed ZnO seed layer were confirmed by analysis of O 1s signal intensities. A transparent and flexible UV photodetector based on ZnO NRs grown on the annealed ZnO seed layer exhibited a higher photocurrent/dark current ratio, photosensitivity, and photoresponsivity than that fabricated using a non-annealed seed layer. Taken together, the above results suggest that the TDA method is an effective way of fabricating transparent and flexible UV photodetectors with high photosensitivity, photoresponsivity, and photocurrent stability and it means that the next generation wearable devices can be easily realized by using the TDA method.

A transparent and flexible ultraviolet (UV) photodetector based on ZnO nanorods grown onto the thermal dissipation annealed ZnO seed layer exhibited high photosensitivity, photoresponsivity, and photocurrent stability without substrate deformation.