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Liu MD, Chen HH, Wang Z, Zhang Y, Zhou X, Tang GJ, Ma F, He XT, Chen XD, Dong JW. On-Chip Topological Photonic Crystal Nanobeam Filters. NANO LETTERS 2024; 24:1635-1641. [PMID: 38277778 DOI: 10.1021/acs.nanolett.3c04363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/28/2024]
Abstract
We present an on-chip filter with a broad tailorable working wavelength and a single-mode operation. This is realized through the application of topological photonic crystal nanobeam filters employing synthesis parameter dimensions. By introducing the translation of air holes as a new synthetic parameter dimension, we obtained nanobeams with tunable Zak phases. Leveraging the bulk-edge correspondence, we identify the existence of topological cavity modes and establish a correlation between the cavity's interface morphology and working wavelength. Through experiments, we demonstrate filters with adjustable filtering wavelengths ranging from 1301 to 1570 nm. Our work illustrates the use of the synthetic translation dimension in the design of on-chip filters, and it holds potential for applications in other devices such as microcavities.
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Affiliation(s)
- Mo-Dian Liu
- School of Physics & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Hou-Hong Chen
- School of Physics & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Ziyu Wang
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
| | - Yong Zhang
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xin Zhou
- School of Physics & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Guo-Jing Tang
- School of Physics & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Fei Ma
- School of Physics & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Xin-Tao He
- School of Physics & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Xiao-Dong Chen
- School of Physics & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
| | - Jian-Wen Dong
- School of Physics & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
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Aly AH, Mohamed BA, Al-Dossari M, Mohamed D. A temperature sensor based on Si/PS/SiO 2 photonic crystals. Sci Rep 2023; 13:21560. [PMID: 38057410 DOI: 10.1038/s41598-023-48836-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Accepted: 11/30/2023] [Indexed: 12/08/2023] Open
Abstract
The present research deals with the extremely sensitive temperature-sensing capabilities of defective one-dimensional photonic crystal structures (Si/PS/SiO2). The proposed structure is realized by putting a defective layer of material silicon Dioxide (SiO2) in the middle of a structure consisting of alternating layers of silicon (Si) and porous silica (PS). The transfer matrix method has been employed to examine the transmission characteristics of the proposed defective one-dimensional photonic crystal in addition to MATLAB software. The transmission spectra of the proposed structure in the visible light domain are computed throughout a temperature range of 25-900 °C, and we study the thermal properties related to the defective mode. Additionally, the impacts of changing the defect layer's thickness are examined. Due to the effects of thermal expansion and the thermo-optical coefficient, the defect mode varies significantly as the temperature increases. Our investigation shows that the proposed structure considerably impacts the transmission intensity of the defective mode. The theoretically obtained numeric values of the quality factor and sensitivity are 2216.6 and 0.085 nm/°C, respectively. The challenges presented by conventional temperature sensors could be overcome by the suggested defective photonic crystal sensor. These results are enough to support our claim that the present design can be used as an ultra-sensitive temperature sensor.
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Affiliation(s)
- Arafa H Aly
- TH-PPM Group, Physics Department, Faculty of Sciences, Beni-Suef University, Beni Suef, 62514, Egypt.
| | - B A Mohamed
- TH-PPM Group, Physics Department, Faculty of Sciences, Beni-Suef University, Beni Suef, 62514, Egypt
| | - M Al-Dossari
- Department of Physics, Faculty of Science, King Khalid University, 62529, Abha, Saudi Arabia
| | - D Mohamed
- TH-PPM Group, Physics Department, Faculty of Sciences, Beni-Suef University, Beni Suef, 62514, Egypt
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Wu CH, Liu C, Lin X, Wang W, Guo YC, Wang Z, Ye G, He F, Ni D, Wang X, Shen L, Shen J, Cai Z, Chen G. Observation of photonic Peierls transition for manipulating microwave in metallic diaphragm-array periodic structures. Sci Rep 2023; 13:15794. [PMID: 37737241 PMCID: PMC10517025 DOI: 10.1038/s41598-023-42218-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2023] [Accepted: 09/06/2023] [Indexed: 09/23/2023] Open
Abstract
Peierls transition that modifies electronic band structure has attracted intensive attention in solid state physics. In the present work, we report that a photonic analog of Peierls transition has been observed in a 1-D triangular metal diaphragm array, where the photonic bandgap structures have been designed at will by adjusting periodically metal diaphragm positions. It is shown by the numerical analysis that the transmission and radiation effect of the present periodic metal structure designed through the Peierls transition rule exhibits the behavior significantly different from an original periodic structure with each unit cell containing a metal diaphragm. The near- and far-field measurement results are in good agreement with our theoretical simulation. The present effect of photonic Peierls transition can serve as a working mechanism for designing new types of guided wave devices. It can be seen that the photonic Peierls transition would be one of the simplest ways for modifying the transport characteristics of electromagnetic waves in periodic structures.
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Affiliation(s)
- Chia Ho Wu
- Department of Applied Physics, Zhejiang University of Technology, Hangzhou, 310023, China.
| | - Chengyang Liu
- Department of Applied Physics, Zhejiang University of Technology, Hangzhou, 310023, China
| | - Xianqing Lin
- Department of Applied Physics, Zhejiang University of Technology, Hangzhou, 310023, China
| | - Wei Wang
- Department of Applied Physics, Zhejiang University of Technology, Hangzhou, 310023, China
| | - Yi Chun Guo
- Department of Electrical Engineering, Chung Hua University, Hsinchu, 30012, Taiwan
| | - Zhuoyuan Wang
- Electronic and Information Engineering College, Ningbo University of Technology, Ningbo, 315000, China
| | - Guoqiang Ye
- Zhejiang Zhaolong Interconnect Technology Co., Ltd, Deqing, Huzhou, 313200, China
| | - Fang He
- Zhejiang Zhaolong Interconnect Technology Co., Ltd, Deqing, Huzhou, 313200, China
| | - Donghua Ni
- Zhejiang Zhaolong Interconnect Technology Co., Ltd, Deqing, Huzhou, 313200, China
| | - Xiaolong Wang
- Department of Applied Physics, Zhejiang University of Technology, Hangzhou, 310023, China
- Key Laboratory of Quantum Precision Measurement of Zhejiang Province, College of Science, Zhejiang University of Technology, Hangzhou, 310023, China
| | - Linfang Shen
- Department of Applied Physics, Zhejiang University of Technology, Hangzhou, 310023, China
| | - Jianqi Shen
- Centre for Optical and Electromagnetic Research, College of Optical Science and Engineering, Zhejiang University, East Building No. 5, Zijingang Campus, Hangzhou, 310058, China.
| | - Zhengbing Cai
- Hangzhou Taiding Test Technologies Co., Ltd., Binjiang, Hangzhou, 310051, China
| | - Gang Chen
- Department of Applied Physics, Zhejiang University of Technology, Hangzhou, 310023, China
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