Silicon carbide light-emitting diode as a prospective room temperature source for single photons

Silicon Carbide Nanostructures as Potential Carbide Material for Electrochemical Supercapacitors: A Review

Silicon carbide (SiC) is a very promising carbide material with various applications such as electrochemical supercapacitors, photocatalysis, microwave absorption, field-effect transistors, and sensors. Due to its enticing advantages of high thermal stability, outstanding chemical stability, high thermal conductivity, and excellent mechanical behavior, it is used as a potential candidate in various fields such as supercapacitors, water-splitting, photocatalysis, biomedical, sensors, and so on. This review mainly describes the various synthesis techniques of nanostructured SiC (0D, 1D, 2D, and 3D) and its properties. Thereafter, the ongoing research trends in electrochemical supercapacitor electrodes are fully excavated. Finally, the outlook of future research directions, key obstacles, and possible solutions are emphasized.

Modeling and Simulations of 4H-SiC/6H-SiC/4H-SiC Single Quantum-Well Light Emitting Diode Using Diffusion Bonding Technique

In the last decade, silicon carbide (SiC) has emerged as a potential material for high-frequency electronics and optoelectronics applications that may require elevated temperature processing. SiC exists in more than 200 different crystallographic forms, referred to as polytypes. Based on their remarkable physical and electrical characteristics, such as better thermal and electrical conductivities, 3C-SiC, 4H-SiC, and 6H-SiC are considered as the most distinguished polytypes of SiC. In this article, physical device simulation of a light-emitting diode (LED) based on the unique structural configuration of 4H-SiC and 6H-SiC layers has been performed which corresponds to a novel material joining technique, called diffusion welding/bonding. The proposed single quantum well (SQW) edge-emitting SiC-based LED has been simulated using a commercially available semiconductor device simulator, SILVACO TCAD. Moreover, by varying different design parameters, the current-voltage characteristics, luminous power, and power spectral density have been calculated. Our proposed LED device exhibited promising results in terms of luminous power efficiency and external quantum efficiency (EQE). The device numerically achieved a luminous efficiency of 25% and EQE of 16.43%, which is at par performance for a SQW LED. The resultant LED structure can be customized by choosing appropriate materials of varying bandgaps to extract the light emission spectrum in the desired wavelength range. It is anticipated that the physical fabrication of our proposed LED by direct bonding of SiC-SiC wafers will pave the way for the future development of efficient and cost-effective SiC-based LEDs.

Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications

Color centers in silicon carbide have recently emerged as one of the most promising emitters for bright single-photon emitting diodes (SPEDs). It has been shown that, at room temperature, they can emit more than 10⁹ photons per second under electrical excitation. However, the spectral emission properties of color centers in SiC at room temperature are far from ideal. The spectral properties could be significantly improved by decreasing the operating temperature. However, the densities of free charge carriers in SiC rapidly decrease as temperature decreases, which reduces the efficiency of electrical excitation of color centers by many orders of magnitude. Here, we study for the first time the temperature characteristics of SPEDs based on color centers in 4H-SiC. Using a rigorous numerical approach, we demonstrate that although the single-photon electroluminescence rate does rapidly decrease as temperature decreases, it is possible to increase the SPED brightness to 10⁷ photons/s at 100 K using the recently predicted effect of hole superinjection in homojunction p-i-n diodes. This gives the possibility to achieve high brightness and good spectral properties at the same time, which paves the way toward novel quantum photonics applications of electrically driven color centers in silicon carbide.

Visible and near-infrared microdisk resonators on a 4H-silicon-carbide-on-insulator platform

Wavelength-sized microdisk resonators were fabricated on a single crystalline 4H-silicon-carbide-on-insulator (4H-SiCOI) platform. By carrying out micro-photoluminescence measurements at room temperature, we show that the microdisk resonators support whispering-gallery modes (WGMs) with quality factors up to 5.25×10³ and mode volumes down to 2.61×(λ/n)³ at the visible and near-infrared wavelengths. Moreover, the demonstrated wavelength-sized microdisk resonators exhibit WGMs whose resonant wavelengths are compatible with the zero-phonon lines of silicon related spin defects in 4H-SiCOI, making them a promising candidate for applications in cavity quantum electrodynamics and integrated quantum photonic circuits.

Single-Photon Sources Based on Novel Color Centers in Silicon Carbide P-I-N Diodes: Combining Theory and Experiment

HIGHLIGHTS

Theory of electrically driven single-photon sources based on color centers in silicon carbide p–i–n diodes. New method of determining the electron and hole capture cross sections by an optically active point defect (color center) from the experimental measurements of the single-photon electroluminescence rate and second-order coherence. The developed method is based on the measurements at the single defect level. Therefore, in contrast to other approaches, one point defect is sufficient to measure its electron and hole capture cross sections.

ABSTRACT

Point defects in the crystal lattice of SiC, known as color centers, have recently emerged as one of the most promising single-photon emitters for non-classical light sources. However, the search for the best color center that satisfies all the requirements of practical applications has only just begun. Many color centers in SiC have been recently discovered but not yet identified. Therefore, it is extremely challenging to understand their optoelectronic properties and evaluate their potential for use in practical single-photon sources. Here, we present a theoretical approach that explains the experiments on single-photon electroluminescence (SPEL) of novel color centers in SiC p–i–n diodes and gives the possibility to engineer highly efficient single-photon emitting diodes based on them. Moreover, we develop a novel method of determining the electron and hole capture cross sections by the color center from experimental measurements of the SPEL rate and second-order coherence. Unlike other methods, the developed approach uses the experimental results at the single defect level that can be easily obtained as soon as a single-color center is identified in the i-type region of the SiC p–i–n diode.

GRAPHIC ABSTRACT

[Image: see text]

Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p-n junction diodes

We investigate fluorescent defect centers in 4H silicon carbide p–n junction diodes fabricated via aluminum-ion implantation into an n-type bulk substrate without the use of an epitaxial growth process. At room temperature, electron-irradiated p–n junction diodes exhibit electroluminescence originating from silicon-vacancy defects. For a diode exposed to an electron dose of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$1 \times 10^{18}\,{{\mathrm{cm}}}^{-2}$$\end{document}1×1018cm-2 at \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$800\,{{\mathrm{keV}}}$$\end{document}800keV, the electroluminescence intensity of these defects is most prominent within a wavelength range of 400–\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$1100\,{{\mathrm{nm}}}$$\end{document}1100nm. The commonly observed \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${{\mathrm{D}}}_1$$\end{document}D1 emission was sufficiently suppressed in the electroluminescence spectra of all the fabricated diodes, while it was detected in the photoluminescence measurements. The photoluminescence spectra also displayed emission lines from silicon-vacancy defects.

Assessment of Crystalline Materials for Solid State Lighting Applications: Beyond the Rare Earth Elements

In everyday life, we are continually exposed to different lighting systems, from the home interior to car lights and from public lighting to displays. The basic emission principles on which they are based range from the old incandescent lamps to the well-established compact fluorescent lamps (CFL) and to the more modern Light Emitting Diode (LEDs) that are dominating the actual market and also promise greater development in the coming years. In the LED technology, the key point is the electroluminescence material, but the fundamental role of proper phosphors is sometimes underestimated even when it is essential for an ideal color rendering. In this review, we analyze the main solid-state techniques for lighting applications, paying attention to the fundamental properties of phosphors to be successfully applied. Currently, the most widely used materials are based on rare-earth elements (REEs) whereas Ce:YAG represents the benchmark for white LEDs. However, there are several drawbacks to the REEs’ supply chain and several concerns from an environmental point of view. We analyze these critical issues and review alternative materials that can overcome their use. New compounds with reduced or totally REE free, quantum dots, metal–organic framework, and organic phosphors will be examined with reference to the current state-of-the-art.

An efficient Terahertz rectifier on the graphene/SiC materials platform

We present an efficient Schottky-diode detection scheme for Terahertz (THz) radiation, implemented on the material system epitaxial graphene on silicon carbide (SiC). It employs SiC as semiconductor and graphene as metal, with an epitaxially defined interface. For first prototypes, we report on broadband operation up to 580 GHz, limited only by the RC circuitry, with a responsivity of 1.1 A/W. Remarkably, the voltage dependence of the THz responsivity displays no deviations from DC responsivity, which encourages using this transparent device for exploring the high frequency limits of Schottky rectification in the optical regime. The performance of the detector is demonstrated by resolving sharp spectroscopic features of ethanol and acetone in a THz transmission experiment.

Ligand hyperfine interactions at silicon vacancies in 4H-SiC

The negative silicon vacancy ([Formula: see text]) in SiC has recently emerged as a promising defect for quantum communication and room-temperature quantum sensing. However, its electronic structure is still not well characterized. While the isolated Si vacancy is expected to give rise to only two paramagnetic centers corresponding to two inequivalent lattice sites in 4H-SiC, there have been five electron paramagnetic resonance (EPR) centers assigned to [Formula: see text] in the past: the so-called isolated no-zero-field splitting (ZFS) [Formula: see text] center and another four axial configurations with small ZFS: T _V1a, T _V2a, T _V1b, and T _V2b. Due to overlapping with ²⁹Si hyperfine (hf) structures in EPR spectra of natural 4H-SiC, hf parameters of T _V1a have not been determined. Using isotopically enriched 4H-²⁸SiC, we overcome the problems of signal overlapping and observe hf parameters of nearest C neighbors for all three components of the S  =  3/2 T _V1a and T _V2a centers. The obtained EPR data support the conclusion that only T _V1a and T _V2a are related to [Formula: see text] and the two configurations of the so-called isolated no-ZFS [Formula: see text] center, [Formula: see text] (I) and [Formula: see text] (II), are actually the central lines corresponding to the transition |-1/2〉  ↔ |+1/2〉  of the T _V2a and T _V1a centers, respectively.

Linear integrated optics in 3C silicon carbide

The development of new photonic materials that combine diverse optical capabilities is needed to boost the integration of different quantum and classical components within the same chip. Amongst all candidates, the superior optical properties of cubic silicon carbide (3C SiC) could be merged with its crystalline point defects, enabling single photon generation, manipulation and light-matter interaction on a single device. The development of photonics devices in SiC has been limited by the presence of the silicon substrate, over which thin crystalline films are heteroepitaxially grown. By employing a novel approach in the material fabrication, we demonstrate grating couplers with coupling efficiency reaching -6 dB, sub-µm waveguides and high intrinsic quality factor (up to 24,000) ring resonators. These components are the basis for linear optical networks and essential for developing a wide range of photonics component for non-linear and quantum optics.

Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide

Constructing quantum devices comprises various challenging tasks, especially when concerning their nanoscale geometry. For quantum color centers, the traditional approach is to fabricate the device structure after the nondeterministic placement of the centers. Reversing this approach, we present the controlled generation of quantum centers in silicon carbide (SiC) by focused proton beam in a noncomplex manner without need for pre- or postirradiation treatment. The generation depth and resolution can be predicted by matching the proton energy to the material's stopping power, and the amount of quantum centers at one specific sample volume is tunable from ensembles of millions to discernible single photon emitters. We identify the generated centers as silicon vacancies through their characteristic magnetic resonance signatures and demonstrate that they possess a long spin-echo coherence time of 42 ± 20 μs at room temperature. Our approach hence enables the fabrication of quantum hybrid nanodevices based on SiC platform, where spin centers are integrated into p-i-n diodes, photonic cavities, and mechanical resonators.

A review on single photon sources in silicon carbide

This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these individually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.

Optical thermometry based on level anticrossing in silicon carbide

We report a giant thermal shift of 2.1 MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences can be detected without application of radiofrequency fields, by simply monitoring the photoluminescence intensity in the vicinity of the level anticrossing. This effect results in an all-optical thermometry technique with temperature sensitivity of 100 mK/Hz(1/2) for a detection volume of approximately 10(-6) mm(3). In contrast, the zero-field splitting in the ground state does not reveal detectable temperature shift. Using these properties, an integrated magnetic field and temperature sensor can be implemented on the same center.

From the Au nano-clusters to the nanoparticles on 4H-SiC (0001)

The control over the configuration, size, and density of Au nanoparticles (NPs) has offered a promising route to control the spatial confinement of electrons and photons, as a result, Au NPs with a various configuration, size and density are witnessed in numerous applications. In this work, we investigate the evolution of self-assembled Au nanostructures on 4H-SiC (0001) by the systematic variation of annealing temperature (AT) with several deposition amount (DA). With the relatively high DAs (8 and 15 nm), depending on the AT variation, the surface morphology drastically evolve in two distinctive phases, i.e. (I) irregular nano-mounds and (II) hexagonal nano-crystals. The thermal energy activates adatoms to aggregate resulting in the formation of self-assembled irregular Au nano-mounds based on diffusion limited agglomeration at comparatively low annealing temperature, which is also accompanied with the formations of hillocks and granules due to the dewetting of Au films and surface reordering. At high temperature, hexagonal Au nano-crystals form with facets along {111} and {100} likely due to anisotropic distribution of surface energy induced by the increased volume of NPs. With the small DA (3 nm), only dome shaped Au NPs are fabricated along with the variation of AT from low to elevated temperature.

Single-photon emitting diode in silicon carbide

Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide an ideal material to build such devices. Here, we demonstrate the fabrication of bright single-photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of >300 kHz) and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single-photon source is proposed. These results provide a foundation for the large scale integration of single-photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.

Arrays of open, independently tunable microcavities

Optical cavities are of central importance in numerous areas of physics, including precision measurement, cavity optomechanics and cavity quantum electrodynamics. The miniaturisation and scaling to large numbers of sites is of interest for many of these applications, in particular for quantum computation and simulation. Here we present the first scaled microcavity system which enables the creation of large numbers of highly uniform, tunable light-matter interfaces using ions, neutral atoms or solid-state qubits. The microcavities are created by means of silicon micro-fabrication, are coupled directly to optical fibres and can be independently tuned to the chosen frequency, paving the way for arbitrarily large networks of optical microcavities.

Quantum-confined single photon emission at room temperature from SiC tetrapods

Controlled engineering of isolated solid state quantum systems is one of the most prominent goals in modern nanotechnology. In this letter we demonstrate a previously unknown quantum system namely silicon carbide tetrapods. The tetrapods have a cubic polytype core (3C) and hexagonal polytype legs (4H)--a geometry that creates spontaneous polarization within a single tetrapod. Modeling of the tetrapod structures predicts that a bound exciton should exist at the 3C-4H interface. The simulations are confirmed by the observation of fully polarized and narrowband single photon emission from the tetrapods at room temperature. The single photon emission provides important insights into understanding the quantum confinement effects in non-spherical nanostructures. Our results pave the way to a new class of crystal phase nanomaterials that exhibit single photon emission at room temperature and therefore are suitable for sensing, quantum information and nanophotonics.

Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. Some of them are characterized by nearly temperature independent axial crystal fields, making these centers very attractive for vector magnetometry. Contrarily, the zero-field splitting of another center exhibits a giant thermal shift of −1.1 MHz/K at room temperature, which can be used for thermometry applications. We also discuss a synchronized composite clock exploiting spin centers with different thermal response.

A silicon carbide room-temperature single-photon source

Over the past few years, single-photon generation has been realized in numerous systems: single molecules, quantum dots, diamond colour centres and others. The generation and detection of single photons play a central role in the experimental foundation of quantum mechanics and measurement theory. An efficient and high-quality single-photon source is needed to implement quantum key distribution, quantum repeaters and photonic quantum information processing. Here we report the identification and formation of ultrabright, room-temperature, photostable single-photon sources in a device-friendly material, silicon carbide (SiC). The source is composed of an intrinsic defect, known as the carbon antisite-vacancy pair, created by carefully optimized electron irradiation and annealing of ultrapure SiC. An extreme brightness (2×10(6) counts s(-1)) resulting from polarization rules and a high quantum efficiency is obtained in the bulk without resorting to the use of a cavity or plasmonic structure. This may benefit future integrated quantum photonic devices.