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Zhang L, Song Y, Gong Q. GaAs-Based InPBi Quantum Dots for High Efficiency Super-Luminescence Diodes. Int J Mol Sci 2019; 20:ijms20236001. [PMID: 31795220 PMCID: PMC6929012 DOI: 10.3390/ijms20236001] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2019] [Revised: 11/20/2019] [Accepted: 11/25/2019] [Indexed: 11/16/2022] Open
Abstract
InPBi exhibits broad and strong photoluminescence at room temperature, and is a potential candidate for fabricating super-luminescence diodes applied in optical coherence tomography. In this paper, the strained InPBi quantum dot (QD) embedded in the AlGaAs barrier on a GaAs platform is proposed to enhance the light emission efficiency and further broaden the photoluminescence spectrum. The finite element method is used to calculate the strain distribution, band alignment and confined levels of InPBi QDs. The carrier recombinations between the ground states and the deep levels are systematically investigated. A high Bi content and a flat QD shape are found preferable for fabricating super-luminescence diodes with high efficiency and a broad emission spectrum.
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Affiliation(s)
- Liyao Zhang
- Department of Physics, University of Shanghai for Science and Technology, Shanghai 200093, China
- Correspondence: (L.Z.); (Q.G.)
| | - Yuxin Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China;
| | - Qian Gong
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China;
- Correspondence: (L.Z.); (Q.G.)
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Liang D, Zhu P, Han L, Zhang T, Li Y, Li S, Wang S, Lu P. Composition Dependence of Structural and Electronic Properties of Quaternary InGaNBi. Nanoscale Res Lett 2019; 14:178. [PMID: 31139956 PMCID: PMC6538720 DOI: 10.1186/s11671-019-2968-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/20/2018] [Accepted: 04/01/2019] [Indexed: 06/09/2023]
Abstract
To realize feasible band structure engineering and hence enhanced luminescence efficiency, InGaNBi is an attractive alloy which may be exploited in photonic devices of visible light and mid-infrared. In present study, the structural, electronic properties such as bandgap, spin-orbit splitting energy, and substrate strain of InGaNBi versus In and Bi compositions are studied by using first-principles calculations. The lattice parameters increase almost linearly with increasing In and Bi compositions. By bismuth doping, the quaternary InGaNBi bandgap could cover a wide energy range from 3.273 to 0.651 eV for Bi up to 9.375% and In up to 50%, corresponding to the wavelength range from 0.38-1.9 µm. The calculated spin-orbit splitting energy are about 0.220 eV for 3.125%, 0.360 eV for 6.25%, and 0.600 eV for 9.375% Bi, respectively. We have also shown the strain of InGaNBi on GaN; it indicates that through adjusting In and Bi compositions, InGaNBi can be designed on GaN with an acceptable strain.
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Affiliation(s)
- Dan Liang
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Pengfei Zhu
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Lihong Han
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Tao Zhang
- College of Electrical Engineering and Information Technology, Sichuan University, Chengdu, 610065, China
| | - Yang Li
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Shanjun Li
- College of Electrical Engineering and Information Technology, Sichuan University, Chengdu, 610065, China.
| | - Shumin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, 41296, Sweden
| | - Pengfei Lu
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China.
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Zhang L, Song Y, Chen Q, Zhu Z, Wang S. InPBi Quantum Dots for Super-Luminescence Diodes. Nanomaterials (Basel) 2018; 8:nano8090705. [PMID: 30201890 PMCID: PMC6164714 DOI: 10.3390/nano8090705] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/16/2018] [Revised: 08/30/2018] [Accepted: 09/06/2018] [Indexed: 06/08/2023]
Abstract
InPBi thin film has shown ultra-broad room temperature photoluminescence, which is promising for applications in super-luminescent diodes (SLDs) but met problems with low light emission efficiency. In this paper, InPBi quantum dot (QD) is proposed to serve as the active material for future InPBi SLDs. The quantum confinement for carriers and reduced spatial size of QD structure can improve light emission efficiently. We employ finite element method to simulate strain distribution inside QDs and use the result as input for calculating electronic properties. We systematically investigate different transitions involving carriers on the band edges and the deep levels as a function of Bi composition and InPBi QD geometry embedded in InAlAs lattice matched to InP. A flat QD shape with a moderate Bi content of a few percent over 3.2% would provide the optimal performance of SLDs with a bright and wide spectrum at a short center wavelength, promising for future optical coherence tomography applications.
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Affiliation(s)
- Liyao Zhang
- Department of Physics, University of Shanghai for Science and Technology, Shanghai 200093, China.
| | - Yuxin Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China.
- Key Laboratory of Terahertz Technology, Chinese Academy of Sciences, Shanghai 200050, China.
| | - Qimiao Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore.
| | - Zhongyunshen Zhu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China.
| | - Shumin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China.
- Key Laboratory of Terahertz Technology, Chinese Academy of Sciences, Shanghai 200050, China.
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296, Sweden.
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Zhang L, Wu M, Chen X, Wu X, Spiecker E, Song Y, Pan W, Li Y, Yue L, Shao J, Wang S. Nanoscale distribution of Bi atoms in InP 1-xBi x. Sci Rep 2017; 7:12278. [PMID: 28947809 PMCID: PMC5612989 DOI: 10.1038/s41598-017-12075-2] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/15/2016] [Accepted: 09/04/2017] [Indexed: 11/09/2022] Open
Abstract
The nanoscale distribution of Bi in InPBi is determined by atom probe tomography and transmission electron microscopy. The distribution of Bi atoms is not uniform both along the growth direction and within the film plane. A statistically high Bi-content region is observed at the bottom of the InPBi layer close to the InPBi/InP interface. Bi-rich V-shaped walls on the (-111) and (1-11) planes close to the InPBi/InP interface and quasi-periodic Bi-rich nanowalls in the (1-10) plane with a periodicity of about 100 nm are observed. A growth model is proposed to explain the formation of these unique Bi-related nanoscale features. These features can significantly affect the deep levels of the InPBi epilayer. The regions in the InPBi layer with or without these Bi-related nanostructures exhibit different optical properties.
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Affiliation(s)
- Liyao Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Mingjian Wu
- Institute of Micro- and Nanostructure Research & Center for Nanoanalysis and Electron Microscopy (CENEM), Department of Materials Science, Universität Erlangen-Nürnberg, Cauerstraße 6, D-91058, Erlangen, Germany
- Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin, Germany
| | - Xiren Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, CAS, 500 Yutian Road, Shanghai, 200083, China
| | - Xiaoyan Wu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Erdmann Spiecker
- Institute of Micro- and Nanostructure Research & Center for Nanoanalysis and Electron Microscopy (CENEM), Department of Materials Science, Universität Erlangen-Nürnberg, Cauerstraße 6, D-91058, Erlangen, Germany
| | - Yuxin Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Wenwu Pan
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Yaoyao Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Li Yue
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Jun Shao
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, CAS, 500 Yutian Road, Shanghai, 200083, China
| | - Shumin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China.
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296, Gothenburg, Sweden.
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Lu P, Liang D, Chen Y, Zhang C, Quhe R, Wang S. Closing the bandgap for III-V nitrides toward mid-infrared and THz applications. Sci Rep 2017; 7:10594. [PMID: 28878271 PMCID: PMC5587590 DOI: 10.1038/s41598-017-11093-4] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2017] [Accepted: 08/17/2017] [Indexed: 11/16/2022] Open
Abstract
A theoretical study of InNBi alloy by using density functional theory is presented. The results show non-linear dependence of the lattice parameters and bulk modulus on Bi composition. The formation energy and thermodynamic stability analysis indicate that the InNBi alloy possesses a stable phase over a wide range of intermediate compositions at a normal growth temperature. The bandgap of InNBi alloy in Wurtzite (WZ) phase closes for Bi composition higher than 1.5625% while that in zinc-blende (ZB) phase decreases significantly at around 356 meV/%Bi. The Bi centered ZB InNBi alloy presents a change from a direct bandgap to an indirect bandgap up to 1.5625% Bi and then an oscillates between indirect bandgap and semi-metallic for 1.5625% to 25% Bi and finally to metallic for higher Bi compositions. For the same Bi composition, its presence in cluster or uniform distribution has a salient effect on band structures and can convert between direct and indirect bandgap or open the bandgap from the metallic gap. These interesting electronic properties enable III-nitride closing the bandgap and make this material a good candidate for future photonic device applications in the mid-infrared to THz energy regime.
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Affiliation(s)
- Pengfei Lu
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China. .,Beijing Computational Science Research Center, Beijing, 100193, China.
| | - Dan Liang
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Yingjie Chen
- School of Information and Communication Engineering, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Chunfang Zhang
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Ruge Quhe
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Shumin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China. .,Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296, Gothenburg, Sweden.
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Wang L, Zhang L, Yue L, Liang D, Chen X, Li Y, Lu P, Shao J, Wang S. Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application. Crystals 2017; 7:63. [DOI: 10.3390/cryst7030063] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
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Wu X, Chen X, Pan W, Wang P, Zhang L, Li Y, Wang H, Wang K, Shao J, Wang S. Anomalous photoluminescence in InP1-xBix. Sci Rep 2016; 6:27867. [PMID: 27291823 PMCID: PMC4904191 DOI: 10.1038/srep27867] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2016] [Accepted: 05/25/2016] [Indexed: 11/08/2022] Open
Abstract
Low temperature photoluminescence (PL) from InP1-xBix thin films with Bi concentrations in the 0-2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 μm in optical coherent tomography (OCT).
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Affiliation(s)
- Xiaoyan Wu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiren Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Wenwu Pan
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Peng Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Liyao Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China
| | - Yaoyao Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China
| | - Hailong Wang
- Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Department of Physics, Qufu Normal University, Qufu 273165, China
| | - Kai Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Jun Shao
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Shumin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg, Sweden
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