1
|
Wang Y, Sun H, Zhang J, Xia Z, Chen W. Streptozotocin-induced diabetic cardiomyopathy in rats: ameliorative effect of PIPERINE via Bcl2, Bax/Bcl2, and caspase-3 pathways. Biosci Biotechnol Biochem 2020; 84:2533-2544. [PMID: 32892714 DOI: 10.1080/09168451.2020.1815170] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The objective of present investigation was to appraise the effects of piperine on STZ-induced diabetic cardiomyopathy in rats. Diabetes was induced in Sprague-Dawley rats with intraperitoneal STZ injection, and the rats were assigned to seven groups. Electrocardiograph, hemodynamic, various biochemical, molecular, and histological parameters were examined. Treatment with piperine significantly (p < 0.05) restored altered myocardial functions, inhibited cardiac marker, and restored electrocardiogram and hemodynamic alterations. The elevated level of cardiac oxido-nitrosative stress and decreased cardiac Na-K-ATPase concentration, after STZ administration, were significantly (p < 0.05) attenuated by piperine treatment. Piperine also considerably (p < 0.05) increased myocardial mitochondrial enzyme activity. STZ-induced alteration in heart ANP, BNP, cTn-I, Bcl2, Bax/Bcl2, and caspase3 mRNA expression was significantly (p < 0.05) restored by piperine treatment. Piperine administration reduced histopathological aberrations induced by STZ. In conclusion, the present investigation suggests that piperine ameliorates STZ-induced diabetic cardiomyopathy via modulation of caspase-3, Bcl2, Bax/Bcl2 pathways. Abbreviations: ACE: Angiotensin-Converting Enzyme; ANOVA: Analysis of Variance; ANP: Atrial Natriuretic Peptide; APAF: Apoptotic Protease-Activating Factor; ARB: Angiotensin Receptor Blockers; ATP: Adenosine Triphosphate; Bax: Bcl-2-associated X protein; Bcl2: B-cell lymphoma 2; BPM: Beats Per Minute; BNP: brain natriuretic peptide; CAD: Caspase-3-Activated DNase; cDNA: Complementary DNA; CK-MB: Creatine Kinase-MB; CPCSEA: Committee for the Purpose of Control And Supervision of Experiments on Animals; cTn-I: cardiac troponin I; DBP: Diastolic Blood Pressure; DCM: Diabetic Cardiomyopathy; DNA: Deoxyribonucleic Acid; DPX: DisterenePhthalate Xylene; ECG: Electrocardiogram; ETC: Electron Transport Chain; GOD-POD: Glucose Oxidase Peroxidase; GSH: Glutathione; IAEC: Institutional Animal Ethics Committee; IL-6: Interleukin-6; IL-1b: Interleukin-1b; LDH: Lactate Dehydrogenase; LV: Left Ventricle; LVEDP: left ventricular end-diastolic Pressure; MABP: Mean Arterial Blood Pressure; MDA: Malondialdehyde; mRNA: Messenger Ribonucleic Acid; MTT: 3- (4,5-Dimethylthiazol-2-yl)-2,5-DiphenyltetrazoliumBromide; NADH: Nicotinamide Adenine Dinucleotide Phosphate; NADPH: Nicotinamide Adenine Dinucleotide Phosphate Hydrogen; NO: nitric oxide; NP: Natriuretic Peptides; OXPHOS: Oxidative Phosphorylation; p.o.: per os; PCR: Polymerase Chain Reaction; RT-PCR: Reverse Transcriptionpolymerase Chain Reaction; PPAR: Peroxisome Proliferator-Activated Receptor Gamma; RAS: Renin-Angiotensin System; RNA: Ribonucleic Acid; ROS: Reactive Oxygen Species; SBP: Systolic Blood Pressure; SDH: Succinate Dehydrogenase; SEM: Standard Error Means; SOD: superoxide dismutase: STZ: Streptozotocin; TNF: Tumor Necrosis Factor Alpha; TnI: Troponin I.
Collapse
Affiliation(s)
- Yan Wang
- Department of Endocrinology, The Affiliated Hospital of North Sichuan Medical College , Nanchong City, Sichuan Province, China
| | - Hui Sun
- Department of Infectious Diseases, The Affiliated Hospital of North Sichuan Medical College , Nanchong City, Sichuan Province, China
| | - Jianwu Zhang
- Department of Pharmacology, School of Pharmacy, North Sichuan Medical College , Nanchong City, Sichuan Province, China
| | - Zhiyang Xia
- Department of Pathophysiology, School of Basic Medicine, North Sichuan Medical College , Nanchong City, Sichuan Province, China
| | - Wei Chen
- Department of Pathophysiology, School of Basic Medicine, North Sichuan Medical College , Nanchong City, Sichuan Province, China
| |
Collapse
|
2
|
Abstract
In the quantum system of Si nanowire (NW), the energy bandgap obviously increases with decreasing radius size of NW, in which the quantum confinement (QC) effect plays a main role. Furthermore, the simulation result demonstrated that the direct bandgap can be obtained as the NW diameter is smaller than 3 nm in Si NW with (001) direction. However, it is discovered in the simulating calculation that the QC effect disappears as the NW diameter arrives at size of monoatomic line, in which its bandgap sharply deceases where the abrupt change effect in bandgap energy occurs near the idea quantum wire. In the experiment, we fabricated the Si NW structure by using annealing and pulsed laser deposition methods, in which a novel way was used to control the radius size of Si NW by confining cylinder space of NW in nanolayer. It should have a good application on optic-electronic waveguide of silicon chip.
Collapse
|
3
|
Gu H, Li G, Liu C, Yuan F, Han F, Zhang L, Wu S. Considerable knock-on displacement of metal atoms under a low energy electron beam. Sci Rep 2017; 7:184. [PMID: 28298631 PMCID: PMC5428036 DOI: 10.1038/s41598-017-00251-3] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/04/2017] [Accepted: 02/14/2017] [Indexed: 11/29/2022] Open
Abstract
Under electron beam irradiation, knock-on atomic displacement is commonly thought to occur only when the incident electron energy is above the incident-energy threshold of the material in question. However, we report that when exposed to intense electrons at room temperature at a low incident energy of 30 keV, which is far below the theoretically predicted incident-energy threshold of zirconium, Zircaloy-4 (Zr-1.50Sn-0.25Fe-0.15Cr (wt.%)) surfaces can undergo considerable displacement damage. We demonstrate that electron beam irradiation of the bulk Zircaloy-4 surface resulted in a striking radiation effect that nanoscale precipitates within the surface layer gradually emerged and became clearly visible with increasing the irradiation time. Our transmission electron microscope (TEM) observations further reveal that electron beam irradiation of the thin-film Zircaly-4 surface caused the sputtering of surface α-Zr atoms, the nanoscale atomic restructuring in the α-Zr matrix, and the amorphization of precipitates. These results are the first direct evidences suggesting that displacement of metal atoms can be induced by a low incident electron energy below threshold. The presented way to irradiate may be extended to other materials aiming at producing appealing properties for applications in fields of nanotechnology, surface technology, and others.
Collapse
Affiliation(s)
- Hengfei Gu
- Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, People's Republic of China.,University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, People's Republic of China
| | - Geping Li
- Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, People's Republic of China. .,University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, People's Republic of China.
| | - Chengze Liu
- Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, People's Republic of China.,University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, People's Republic of China
| | - Fusen Yuan
- Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, People's Republic of China.,University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, People's Republic of China
| | - Fuzhou Han
- Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, People's Republic of China.,University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, People's Republic of China
| | - Lifeng Zhang
- Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, People's Republic of China.,University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, People's Republic of China
| | - Songquan Wu
- Key Laboratory of Optoelectronic Materials Chemical and Physics, Fujian Institute of Research on The Structure of Matter, Chinese Academy of Sciences, 155 Yangqiao Road West, Fuzhou, 350002, People's Republic of China
| |
Collapse
|
4
|
Huang WQ, Liu SR, Huang ZM, Wu XK, Qin CJ, Zhuang QD. Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer. NANOSCALE RESEARCH LETTERS 2016; 11:500. [PMID: 27848235 PMCID: PMC5110452 DOI: 10.1186/s11671-016-1707-z] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2016] [Accepted: 10/26/2016] [Indexed: 06/06/2023]
Abstract
It is reported that the silicon nanocrystals (NCs) are fabricated by using self-assembly growth method with the annealing and the electron beam irradiation processes in the pulsed laser depositing, on which the visible lasing with higher gain (over 130 cm-1) and the enhanced emission in optical telecommunication window are measured in photoluminescence (PL). It is interesting that the enhanced visible electroluminescence (EL) on silicon nanocrystals (Si-NCs) is obviously observed by the naked eyes, and the light-emitting diode (LED) of the Si-NCs with external quantum efficiency of 20% is made on silicon chip in our laboratory. A four-level system is built for emission model in nanosilicon, in which the PL and EL measurement and transmission electron microscope (TEM) analysis demonstrate that the pumping levels with shorter lifetime from the rising energy of the Si quantum dots due to the quantum confinement effect occur, and the electronic localized states with longer lifetime owing to impurities bonding on Si-NCs surface are formed in the crystallized process to produce the inversion of population for lasing, where the optical gain is generated.
Collapse
Affiliation(s)
- Wei-Qi Huang
- Institute of Nanophotonic Physics, Guizhou University, Guiyang, 550025, China.
| | - Shi-Rong Liu
- State Key Laboratory of Ore Deposit Geochemistry Institute of Geochemistry, Chinese Academy of Science Institute of Geochemistry, Guiyang, 550003, China
| | - Zhong-Mei Huang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Xue-Ke Wu
- Institute of Nanophotonic Physics, Guizhou University, Guiyang, 550025, China
| | - Chao-Jian Qin
- State Key Laboratory of Ore Deposit Geochemistry Institute of Geochemistry, Chinese Academy of Science Institute of Geochemistry, Guiyang, 550003, China
| | - Qian-Dong Zhuang
- Physics Department, Lancaster University, Lancaster, LA1 4YB, UK
| |
Collapse
|
5
|
Huang ZM, Huang WQ, Dong TG, Wang G, Wu XK. Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure. NANOSCALE RESEARCH LETTERS 2016; 11:462. [PMID: 27757943 PMCID: PMC5069211 DOI: 10.1186/s11671-016-1682-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/23/2016] [Accepted: 10/08/2016] [Indexed: 06/06/2023]
Abstract
It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed laser deposition method, it is discovered that the nanocrystals of Si and Ge grow in the (100) and (111) directions after annealing or electron beam irradiation. The enhanced PL peaks with multi-longitudinal-mode are measured at room temperature in the super-lattice of Si-Ge nanolayer quantum system on SOI.
Collapse
Affiliation(s)
- Zhong-Mei Huang
- State key laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai, 200433 China
- Institute of Nanophotonic Physics, Guizhou University, Guiyang, 550025 China
| | - Wei-Qi Huang
- Institute of Nanophotonic Physics, Guizhou University, Guiyang, 550025 China
| | - Tai-Ge Dong
- Institute of Nanophotonic Physics, Guizhou University, Guiyang, 550025 China
| | - Gang Wang
- Institute of Nanophotonic Physics, Guizhou University, Guiyang, 550025 China
| | - Xue-Ke Wu
- Institute of Nanophotonic Physics, Guizhou University, Guiyang, 550025 China
| |
Collapse
|
6
|
Huang ZM, Huang WQ, Liu SR, Dong TG, Wang G, Wu XK, Qin CJ. Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure. Sci Rep 2016; 6:24802. [PMID: 27097990 PMCID: PMC4838848 DOI: 10.1038/srep24802] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/17/2016] [Accepted: 04/05/2016] [Indexed: 11/13/2022] Open
Abstract
In our experiment, it was observed that the emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional (1D) structure. The results of experiment and calculation demonstrate that the uniaxial tensile strain in the (111) and (110) direction can efficiently transform Ge to a direct bandgap material with the bandgap energy useful for technological application. It is interested that under the tensile strain from Ge-GeSn layers on 1D structure in which the uniaxial strain could be obtained by curved layer (CL) effect, the two bandgaps EΓg and ELg in the (111) direction become nearly equal at 0.83 eV related to the emission of direct-gap band near 1500 nm in the experiments. It is discovered that the red-shift of the peaks from 1500 nm to 1600 nm occurs with change of the uniaxial tensile strain, which proves that the peaks come from the emission of direct-gap band.
Collapse
Affiliation(s)
- Zhong-Mei Huang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433 (China)
| | - Wei-Qi Huang
- Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025 (China)
| | - Shi-Rong Liu
- State Key Laboratory of Environmental Geochemistry Institute of Geochemistry, Chinese Academy of Science Institute of Geochemistry, Guiyang 550003 (China)
| | - Tai-Ge Dong
- Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025 (China)
| | - Gang Wang
- Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025 (China)
| | - Xue-Ke Wu
- Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025 (China)
| | - Cao-Jian Qin
- State Key Laboratory of Environmental Geochemistry Institute of Geochemistry, Chinese Academy of Science Institute of Geochemistry, Guiyang 550003 (China)
| |
Collapse
|
7
|
Spallino L, Vaccaro L, Cannas M, Gelardi FM. Luminescence from nearly isolated surface defects in silica nanoparticles. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2015; 27:365301. [PMID: 26302715 DOI: 10.1088/0953-8984/27/36/365301] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
A structured emission/excitation pattern, proper of isolated defects, arises in a vacuum from silica nanoparticles. The luminescence, centered around 3.0-3.5 eV, is characterised by a vibronic progression due to the phonon coupling with two localised modes of frequency ∼1370 cm(-1) and ∼360 cm(-1), and decays in about 300 ns at 10 K. On increasing the temperature, the intensity and the lifetime decrease due to the activation of a non-radiative rate from the excited state. Concurrently, the temperature dependence of the lineshape evidences the low coupling with non-localised modes of the matrix (Huang-Rhys factor S ~ 0.2) and the poor influence of the inhomogeneous broadening. These findings outline an uncommon behaviour in the field of the optical properties of defects in amorphous solids, evidencing that the silica surface can allocate luminescent defects almost disentangled from the basal network.
Collapse
Affiliation(s)
- L Spallino
- Dipartimento di Fisica e Chimica, Università degli Studi di Palermo, I-90123 Palermo, Italy
| | | | | | | |
Collapse
|