Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure

Effective Suppressing Phase Segregation of Mixed-Halide Perovskite by Glassy Metal-Organic Frameworks

Lead mixed-halide perovskites offer tunable bandgaps for optoelectronic applications, but illumination-induced phase segregation can quickly lead to changes in their crystal structure, bandgaps, and optoelectronic properties, especially for the Br-I mixed system because CsPbI3 tends to form a non-perovskite phase under ambient conditions. These behaviors can impact their performance in practical applications. By embedding such mixed-halide perovskites in a glassy metal-organic framework, a family of stable nanocomposites with tunable emission is created. Combining cathodoluminescence with elemental mapping under a transmission electron microscope, this research identifies a direct relationship between the halide composition and emission energy at the nanoscale. The composite effectively inhibits halide ion migration, and consequently, phase segregation even under high-energy illumination. The detailed mechanism, studied using a combination of spectroscopic characterizations and theoretical modeling, shows that the interfacial binding, instead of the nanoconfinement effect, is the main contributor to the inhibition of phase segregation. These findings pave the way to suppress the phase segregation in mixed-halide perovskites toward stable and high-performance optoelectronics.

Tunable and white light photoluminescence from ZnO on porous Si with the addition of carbon quantum dots

In this work we demonstrate a two-pixel solid-state photoluminescent device able to emit white light covering the entire visible spectrum from 380 nm up to 800 nm. The device is based on a combination of porous Si, hydrothermally grown ZnO and carbon quantum dots, in a two-pixel formation, with porous Si and ZnO acting independently while the carbon quantum dots are deposited on top of the entire device. All processing is done using standard Si processing techniques. Moreover, the device design allows for tunability of the emitted spectrum simply by choosing the desired combination of the materials. Overall, the demonstrated device is low cost, environmentally safe and biocompatible.

Piezoelectricity-modulated optical recombination dynamics of monolayer-MoS2/GaN-film heterostructures

Dynamic manipulation of optoelectronic responses by mechanical stimuli is promising for developing wearable electronics and human-machine interfacing. Although 2D-3D hybrid heterostructures can bring advancements in optoelectronics, their dynamic optical responses to external strains remain rarely studied. Here, we demonstrate the strain-tuned recombination dynamics of monolayer-MoS₂ and thin-film-GaN heterostructures. We find that optical excitons in the heterostructures, apart from trions, can be markedly modulated by strains. We argue that MoS₂ piezoelectric dipoles across the interfaces lead to curved band diagrams, in which optical excitons dissociate into spatially separated quasi-particles and concurrently relocate to the maxima of valence bands and the minima of conduction bands. With the increase in tensile strains, the photoluminescence (PL) intensity of the heterostructures shows quenched responses. Noticeably, the change in PL spectra strongly depends on the directions of the applied strains because of the lateral piezoelectric periodicity of MoS₂ flakes. This work not only helps in understanding the underlying physics of the decreased PL intensities upon applying strains but also demonstrates a feasible way (i.e., strains) to manipulate the PL efficiency of 2D-material-based optoelectronics.

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates

This paper reports the photoluminescence (PL) properties of InGaN/GaN multiple quantum well (MQW) light-emitting diodes grown on silicon substrates which were designed with different tensile stress controlling architecture like periodic Si δ-doping to the n-type GaN layer or inserting InGaN/AlGaN layer for investigating the strain-controlled recombination mechanism in the system. PL results turned out that tensile stress released samples had better PL performances as their external quantum efficiencies increased to 17%, 7 times larger than the one of regular sample. Detail analysis confirmed they had smaller nonradiative recombination rates ((2.5~2.8)×10^-2 s^-1 compared to (3.6~4.7)× 10^-2 s^-1), which was associated with the better crystalline quality and absence of dislocations or cracks. Furthermore, their radiative recombination rates were found more stable and were much higher ((5.7~5.8) ×10^-3 s^-1 compared to [9~7] ×10^-4 s^-1) at room temperature. This was ascribed to the suppression of shallow localized states on MQW interfaces, leaving the deep radiative localization centers inside InGaN layers dominating the radiative recombination.