Tunable Valley Polarization and Valley Orbital Magnetic Moment Hall Effect in Honeycomb Systems with Broken Inversion Symmetry

Quantum Correction to the Orbital Hall Effect

Evaluations of the orbital Hall effect (OHE) have retained only interband matrix elements of the position operator. Here, we evaluate the OHE including all matrix elements of the position operator, including the technically challenging intraband elements. We recover previous results and find quantum corrections due to the noncommutativity of the position and velocity operators and interband matrix elements of the orbital angular momentum. The quantum corrections dominate the OHE responses of the topological antiferromagnet CuMnAs and of massive Dirac fermions.

Enhancement of van der Waals Interlayer Coupling through Polar Janus MoSSe

Interlayer coupling plays essential roles in the quantum transport, polaritonic, and electrochemical properties of stacked van der Waals (vdW) materials. In this work, we report the unconventional interlayer coupling in vdW heterostructures (HSs) by utilizing an emerging 2D material, Janus transition metal dichalcogenides (TMDs). In contrast to conventional TMDs, monolayer Janus TMDs have two different chalcogen layers sandwiching the transition metal and thus exhibit broken mirror symmetry and an intrinsic vertical dipole moment. Such a broken symmetry is found to strongly enhance the vdW interlayer coupling by as much as 13.2% when forming MoSSe/MoS₂ HS as compared to the pristine MoS₂ counterparts. Our noncontact ultralow-frequency Raman probe, linear chain model, and density functional theory calculations confirm the enhancement and reveal the origins as charge redistribution in Janus MoSSe and reduced interlayer distance. Our results uncover the potential of tuning interlayer coupling strength through Janus heterostacking.

The effect of metallic substrates on the optical properties of monolayer MoSe2

Atomically thin materials, like semiconducting transition metal dichalcogenides (S-TMDs), are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. Photoluminescence and reflectance contrast techniques are employed to investigate the effect of metallic substrates on optical properties of MoSe₂ monolayer (ML). The optical spectra of MoSe₂ MLs deposited on Pt, Au, Mo and Zr have distinctive metal-related lineshapes. In particular, a substantial variation in the intensity ratio and the energy separation between a negative trion and a neutral exciton is observed. It is shown that using metals as substrates affects the doping of S-TMD MLs. The explanation of the effect involves the Schottky barrier formation at the interface between the MoSe₂ ML and the metallic substrates. The alignment of energy levels at the metal/semiconductor junction allows for the transfer of charge carriers between them. We argue that a proper selection of metallic substrates can be a way to inject appropriate types of carriers into the respective bands of S-TMDs.

Spontaneous valley splitting and valley pseudospin field effect transistors of monolayer VAgP2Se6

Valleytronics has attracted much attention due to its potential applications in the information processing industry. Creation of permanent valley polarization (PVP), i.e. unbalanced occupation at different valleys, is a vital requirement for practical devices in valleytronics. However, the development of an appropriate material with PVP remains a main challenge. Here we used first-principles calculations to predict that the spin-orbit coupling and magnetic ordering allow spontaneous valley Zeeman-type splitting in the pristine monolayer of VAgP₂Se₆. After suitable doping of VAgP₂Se₆, the Zeeman-type valley splitting results in a PVP, similar to the effect of spin polarization in spintronics. The VAgP₂Se₆ monolayer has nonequivalent valleys which can emit or absorb circularly polarized photons with opposite chirality. It thus shows great potential to be used as a photonic chirality filter and a circularly polarized light source. We then designed a valley pseudospin field effect transistor (VPFET) based on the monolayer VAgP₂Se₆, akin to the spin field effect transistors. In contrast to the current common transistors, VPFETs carry information of not only the electrons but also the valley pseudospins, far beyond common transistors.

Valley Pseudospin with a Widely Tunable Bandgap in Doped Honeycomb BN Monolayer

Valleytronics is a promising paradigm to explore the emergent degree of freedom for charge carriers on the energy band edges. Using ab initio calculations, we reveal that the honeycomb boron nitride (h-BN) monolayer shows a pair of inequivalent valleys in the vicinities of the vertices of hexagonal Brillouin zone even without the protection of the C₃ symmetry. The inequivalent valleys give rise to a 2-fold degree of freedom named the valley pseudospin. The valley pseudospin with a tunable bandgap from deep ultraviolet to far-infrared spectra can be obtained by doping h-BN monolayer with carbon atoms. For a low-concentration carbon periodically doped h-BN monolayer, the subbands with constant valley Hall conductance are predicted due to the interaction between the artificial superlattice and valleys. In addition, the valley pseudospin can be manipulated by visible light for high-concentration carbon doped h-BN monolayer. In agreement with our calculations, the circularly polarized photoluminescence spectra of the B_0.92NC_2.44 sample show a maximum valley-contrasting circular polarization of 40% and 70% at room temperature and 77 K, respectively. Our work demonstrates a class of valleytronic materials with a controllable bandgap.