Patterning highly ordered arrays of complex nanofeatures through EUV directed polarity switching of non chemically amplified photoresist

Green Nanofabrication Opportunities in the Semiconductor Industry: A Life Cycle Perspective

The turn of the 21st century heralded in the semiconductor age alongside the Anthropocene epoch, characterised by the ever-increasing human impact on the environment. The ecological consequences of semiconductor chip manufacturing are the most predominant within the electronics industry. This is due to current reliance upon large amounts of solvents, acids and gases that have numerous toxicological impacts. Management and assessment of hazardous chemicals is complicated by trade secrets and continual rapid change in the electronic manufacturing process. Of the many subprocesses involved in chip manufacturing, lithographic processes are of particular concern. Current developments in bottom-up lithography, such as directed self-assembly (DSA) of block copolymers (BCPs), are being considered as a next-generation technology for semiconductor chip production. These nanofabrication techniques present a novel opportunity for improving the sustainability of lithography by reducing the number of processing steps, energy and chemical waste products involved. At present, to the extent of our knowledge, there is no published life cycle assessment (LCA) evaluating the environmental impact of new bottom-up lithography versus conventional lithographic techniques. Quantification of this impact is central to verifying whether these new nanofabrication routes can replace conventional deposition techniques in industry as a more environmentally friendly option.

Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for High-Resolution Extreme Ultraviolet Lithography Applications

The present report demonstrates the potential of a polyarylenesulfonium polymer, poly[methyl(4-(phenylthio)-phenyl)sulfoniumtrifluoromethanesulfonate] (PAS), as a versatile nonchemically amplified negative tone photoresist for next-generation lithography (NGL) applications starting from i-line (λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼ 13.5 nm) lithography. PAS exhibited considerable contrast (γ), 0.08, toward EUV and patterned 20 nm features successfully.

Recent advances in non-chemically amplified photoresists for next generation IC technology

The present article reviews the recent advances in the area of non-chemically amplified photoresists particularly for sub-30 nm nodes.