Classification of Valleytronics in Thermoelectricity

Are topological insulators promising thermoelectrics?

Some of the best thermoelectric (TE) materials to date are also topological insulators (TIs). While many studies have investigated the effects of topologically-protected TI surface states on TE properties, the conditions needed to realize such effects are quite different from typical operating conditions of TE devices for, e.g., power generation and room-temperature Peltier cooling. As a result, it is still unclear what properties of TIs, especially those related to the bulk band structure, are beneficial for TE performance, if any. Here, we perform high-throughput transport calculations using density functional theory to reveal that, within the same structure type, TIs tend to outperform normal insulators as TEs when properly optimized. The calculations also indicate that the TE performance is higher for TIs with strongly inverted bands. To explain these observations, we develop models based on Boltzmann transport theory which show that warping driven by band inversion, a key characteristic of TIs, is responsible for the high TE performance of TIs. We find that warping benefits the TE performance because of reduced transport mass and effectively higher valley degeneracy. Our results show that the band inversion strength is a critical property of a TI dictating the TE performance, and we suggest potential strategies to tune the inversion strength and enhance the TE performance in TIs, such as alloying and strain engineering. The study marks TIs as serious candidates for TE applications owing to band inversion-driven warping.

Microscale Engineering of n-Type Doping in Nanostructured Gallium Antimonide: AC Impedance Spectroscopy Insights on Grain Boundary Characterization and Strategies for Controlled Dopant Distribution

This paper investigates the microscale engineering aspects of n-type doped GaSb to address the challenges associated with achieving high electrical conductivity and precise dopant distribution in this semiconductor material. AC impedance spectroscopy is employed as a reliable technique to characterize the microstructural and electrical properties of GaSb, providing valuable insights into the impact of grain boundaries on overall electrical performance. The uneven distribution of dopants, caused by diffusion, and the incomplete activation of introduced dopants pose significant obstacles in achieving consistent material properties. To overcome these challenges, a careful selection of alloying elements, such as bismuth, is explored to suppress the formation of native acceptor defects and modulate band structures, thereby influencing the doping and compensator formation processes. Additionally, the paper examines the effect of microwave annealing as a potential solution for enhancing dopant activation, minimizing diffusion, and reducing precipitate formation. Microwave annealing shows promise due to its rapid heating and shorter processing times, making it a viable alternative to traditional annealing methods. The study underscores the need for a stable grain boundary passivation strategy to achieve significant improvements in GaSb material performance. Simple grain size reduction strategies alone do not result in better thermoelectric performance, for example, and increasing the grain boundary area per unit volume exacerbates the issue of free carrier compensation. These findings highlight the complexity of achieving optimal doping in GaSb materials and the importance of innovative analytical techniques and controlled doping processes. The comprehensive exploration of n-type doped GaSb presented in this research provides valuable insights for future advancements in the synthesis and optimization of high-conductivity nanostructured n-type GaSb, with potential applications in thermoelectric devices and other electronic systems.

The phonon scattering mechanism and its effect on the temperature dependent thermal and thermoelectric properties of a silver nanowire

In this work, the electron-phonon, phonon-phonon, and phonon structure scattering mechanisms and their effect on the thermal and thermoelectric properties of a silver nanowire (AgNW) is investigated in the temperature range of 10 to 300 K. The electron-phonon scattering rate decreases with the increase of temperature. The phonon-phonon scattering rate increases with temperature and becomes greater than the electron-phonon scattering rate when the temperature is higher than the Debye temperature (223 K). The rate of phonon structure scattering is constant. The total phonon scattering rate decreases with temperature when the temperature is lower than about 150 K, and increases when the temperature is higher than 150 K. Correspondingly, the temperature dependent variation trend of the lattice thermal conductivity is opposite diametrically to that of the total phonon scattering rate. The thermoelectric properties of the AgNW are strongly coupled with the thermal conductivity via the phonon and electron transition. The thermoelectric properties of the material are quantified by the figure of merit (ZT). The ZT value of the AgNW is greater than that of bulk silver in the corresponding temperature range, and this difference increases with temperature. The order of the ZT of the AgNW is about 13 times greater than that of bulk silver at room temperature. The large increase of the ZT value of the AgNW is mainly due to the enhanced electron scattering and phonon scattering mechanisms in the AgNW.

Topological phase and thermoelectric properties of bialkali bismuthide compounds (Na, K)2RbBi from first-principles

We report the topological phase and thermoelectric properties of bialkali bismuthide compounds (Na, K)₂RbBi, as yet hypothetical. The topological phase transitions of these compounds under hydrostatic pressure are investigated. The calculated topological surface states andZ₂topological index confirm the nontrivial topological phase. The electronic properties and transport coefficients are obtained using the density functional theory combined with the Boltzmann transport equation. The relaxation times are determined using the deformation potential theory to calculate the electronic thermal and electrical conductivity. The calculated mode Grüneisen parameters are substantial, indicating strong anharmonic acoustic phonons scattering, which results in an exceptionally low lattice thermal conductivity. These compounds also have a favorable power factor leading to a relatively flat p-type figure-of-merit over a broad temperature range. Furthermore, the mechanical properties and phonon band dispersions show that these structures are mechanically and dynamically stable. Therefore, they offer excellent candidates for practical applications over a wide range of temperatures.

Thermopower, figure of merit and Fermi integrals

The thermoelectric efficiency accounting for the conversion of thermal energy into electricity is usually given by the figure of merit which involves three transport coefficients, with the thermopower, the electrical and the thermal conductivities. These coefficients can be defined at a semi-classical level as a function of Fermi integrals which only allow analytical approximations in either highly degenerate or strongly non-degenerate regimes. Otherwise, the intermediate regime which is of interest in order to describe high thermoelectric performance requires numerical calculations. It is shown that these Fermi integrals can actually be calculated and that the transport coefficients can be reformulated accordingly. This allows for a new definition of the figure of merit which covers all the regimes of interest without numerical calculations. This formulation of the Fermi integrals also provides a good starting point in order to perform a power expansion leading to a new approximation relevant for the intermediate regime. It turns out that the transport coefficients can then be expanded by revealing their high temperatures asymptotic behaviors. These results shed new light on the thermoelectric properties of the materials and point out that the analysis of their high temperatures behaviors allow to characterize experimentally the energy dependence in the transport integrals.

Demonstration of valley anisotropy utilized to enhance the thermoelectric power factor

Valley anisotropy is a favorable electronic structure feature that could be utilized for good thermoelectric performance. Here, taking advantage of the single anisotropic Fermi pocket in p-type Mg3Sb2, a feasible strategy utilizing the valley anisotropy to enhance the thermoelectric power factor is demonstrated by synergistic studies on both single crystals and textured polycrystalline samples. Compared to the heavy-band direction, a higher carrier mobility by a factor of 3 is observed along the light-band direction, while the Seebeck coefficient remains similar. Together with lower lattice thermal conductivity, an increased room-temperature zT by a factor of 3.6 is found. Moreover, the first-principles calculations of 66 isostructural Zintl phase compounds are conducted and 9 of them are screened out displaying a pz-orbital-dominated valence band, similar to Mg3Sb2. In this work, we experimentally demonstrate that valley anisotropy is an effective strategy for the enhancement of thermoelectric performance in materials with anisotropic Fermi pockets.

Thermal Management Systems and Waste Heat Recycling by Thermoelectric Generators—An Overview

With the fast evolution in greenhouse gas (GHG) emissions (e.g., CO2, N2O) caused by fossil fuel combustion and global warming, climate change has been identified as a critical threat to the sustainable development of human society, public health, and the environment. To reduce GHG emissions, besides minimizing waste heat production at the source, an integrated approach should be adopted for waste heat management, namely, waste heat collection and recycling. One solution to enable waste heat capture and conversion into useful energy forms (e.g., electricity) is employing solid-state energy converters, such as thermoelectric generators (TEGs). The simplicity of thermoelectric generators enables them to be applied in various industries, specifically those that generate heat as the primary waste product at a temperature of several hundred degrees. Nevertheless, thermoelectric generators can be used over a broad range of temperatures for various applications; for example, at low temperatures for human body heat harvesting, at mid-temperature for automobile exhaust recovery systems, and at high temperatures for cement industries, concentrated solar heat exchangers, or NASA exploration rovers. We present the trends in the development of thermoelectric devices used for thermal management and waste heat recovery. In addition, a brief account is presented on the scientific development of TE materials with the various approaches implemented to improve the conversion efficiency of thermoelectric compounds through manipulation of Figure of Merit, a unitless factor indicative of TE conversion efficiency. Finally, as a case study, work on waste heat recovery from rotary cement kiln reactors is evaluated and discussed.

When band convergence is not beneficial for thermoelectrics

Band convergence is considered a clear benefit to thermoelectric performance because it increases the charge carrier concentration for a given Fermi level, which typically enhances charge conductivity while preserving the Seebeck coefficient. However, this advantage hinges on the assumption that interband scattering of carriers is weak or insignificant. With first-principles treatment of electron-phonon scattering in the CaMg2Sb2-CaZn2Sb2 Zintl system and full Heusler Sr2SbAu, we demonstrate that the benefit of band convergence can be intrinsically negated by interband scattering depending on the manner in which bands converge. In the Zintl alloy, band convergence does not improve weighted mobility or the density-of-states effective mass. We trace the underlying reason to the fact that the bands converge at a one k-point, which induces strong interband scattering of both the deformation-potential and the polar-optical kinds. The case contrasts with band convergence at distant k-points (as in the full Heusler), which better preserves the single-band scattering behavior thereby successfully leading to improved performance. Therefore, we suggest that band convergence as thermoelectric design principle is best suited to cases in which it occurs at distant k-points.

Thermoelectric cooling materials

Solid-state thermoelectric devices can directly convert electricity into cooling or enable heat pumping through the Peltier effect. The commercialization of thermoelectric cooling technology has been built on the Bi₂Te₃ alloys, which have had no rival for the past six decades around room temperature. With the discovery and development of more promising materials, it is possible to reshape thermoelectric cooling technology. Here we review the current status of, and future outlook for, thermoelectric cooling materials.

Fully spin-valley-polarized current induced by electric field in zigzag stanene and germanene nanoribbons

We theoretically investigated the spin-dependent valleytronics in stanene and germanene nanoribbons, considering the electron-electron interaction and the external electric field without any magnetic exchange element. Our results showed that applying an electric field in these two-dimensional materials with a large intrinsic spin-orbit coupling can provide a versatile platform to create spin-valley currents by exploiting the edge magnetism at their zigzag edges. Generally, manipulating the electric field can generate a fully spin-valley-polarized current with a large magnitude even at room temperature. The rich and tunable spin and valley degrees of freedom can turn these structures into ideal candidates for spin-valley applications.

Probing the martensite transition and thermoelectric properties of CoxTaZ(ZSi, Ge, Sn andx1, 2): a study based on density functional theory

In this work, using density functional theory based electronic structure calculations, we carry out a comparative study of geometric, mechanical, electronic, magnetic, and thermoelectric properties of Co_xTaZalloys, whereZ= Si, Ge and Sn andx= 1 and 2. In the present study, a systematic approach has been taken to perform calculations to probe the possibility of existence of a tetragonal (martensite) phase in these alloys and also to perform a comparative study of various physical properties of the six systems, mentioned above, in the cubic and possible tetragonal phases. From our calculations, a tetragonal phase has been found to be stable up to about 400 K in case of Co₂TaSi and Co₂TaGe alloys, and up to about 115 K for Co₂TaSn, indicating the presence of room temperature cubic phase in the latter alloy unlike the former two. Further, the results based on the energetics and electronic structure have been found to corroborate well with the elastic properties. All the above-mentioned full Heusler alloys (FHAs) show magnetic behavior with metallicity in both the phases. However, their half Heusler counterparts exhibit non-magnetic semi-conducting behavior in the cubic phase. We calculate and compare the thermoelectric properties, in detail, of all the materials in the cubic and possible tetragonal phases. In the cubic phase, the half Heusler alloys exhibit improved thermoelectric properties compared to the respective FHAs. Furthermore, it is observed that the FHAs exhibit higher (by about an order of magnitude) values of Seebeck coefficients in their cubic phases, compared to those in the tetragonal phases (which are of the order of only a few micro-volts/Kelvin). The observed behaviors of the transport properties of the probed materials have been analyzed using the topology of the Fermi surface.

Semiclassical transport properties of IrGa3: a promising thermoelectric material

IrGa₃ is an intermetallic compound which is expected to be a metal, but a study on the electronic properties of this material to confirm its metallic character is not available in the literature. In this work, we report for the first time a first-principles density functional theory and semiclassical Boltzmann theory study of the structural, electronic and transport properties of this material. The inclusion of the spin-orbit coupling term is crucial to calculate accurately the electronic properties of this compound. We have established that IrGa₃ is an indirect semiconductor with a narrow gap of 0.07 eV. From semiclassical Boltzmann transport theory, it is inferred that this material, with the appropriate hole concentration, could have a thermoelectric figure of merit at room temperature comparable to other intermetallic compounds such as FeGa₃, though the transport properties of IrGa₃ are highly anisotropic.

Advances in thermoelectric materials research: Looking back and moving forward

High-performance thermoelectric materials lie at the heart of thermoelectrics, the simplest technology applicable to direct thermal-to-electrical energy conversion. In its recent 60-year history, the field of thermoelectric materials research has stalled several times, but each time it was rejuvenated by new paradigms. This article reviews several potentially paradigm-changing mechanisms enabled by defects, size effects, critical phenomena, anharmonicity, and the spin degree of freedom. These mechanisms decouple the otherwise adversely interdependent physical quantities toward higher material performance. We also briefly discuss a number of promising materials, advanced material synthesis and preparation techniques, and new opportunities. The renewable energy landscape will be reshaped if the current trend in thermoelectric materials research is sustained into the foreseeable future.

Enhancement of the Thermoelectric Properties of FeGa3-type Structures with Group 6 Transition Metals: A Computational Exploration

The possible existence of group 6 TM₃ compounds with T = Cr, Mo, W and M = Ga, In is investigated with the aid of density functional theory calculations. Their most probable crystal structure is expected to be of the FeGa₃ type tetragonal space group P4₂/mnm. All compounds are computed to be semiconductors with a band gap ranging from 0.08 to 0.43 eV, at the modified Becke-Johnson level of theory. The thermoelectric properties are analyzed via calculations based on Boltzmann transport equation under a constant relaxation time approximation. Promising power factors are computed for both n- and p-type WGa₃ because of a band degeneracy around the Fermi level similar to that of heavily doped PbTe and SnTe materials. If the optimal chemical potential can be reached, a thermoelectric figure of merit up to 0.6 at 800 K for both n- and p-type may be expected for WGa₃.

Valleytronics of III–V solid solutions for thermoelectric application

It is shown that the degeneracy of the bandstructure has different impacts on thermoelectric properties of III–V materials.