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Gong Q, Zhang W, He J, Ma F, Song L, Cheng L, Zhang J, Wang L, Hu Y. Simultaneously improving the quality factor and outcoupling efficiency of organic light-emitting field-effect transistors with planar microcavity. OPTICS EXPRESS 2023; 31:2480-2491. [PMID: 36785261 DOI: 10.1364/oe.479422] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/27/2022] [Accepted: 12/20/2022] [Indexed: 06/18/2023]
Abstract
Organic light-emitting field-effect transistors (OLEFETs) are regarded as an ideal device platform to achieve electrically pumped organic semiconductor lasers (OSLs). However, the incorporation of a high-quality resonator into OLEFETs is still challenging since the process usually induces irreparable deterioration to the electric-related emission performance of the device. We here propose a dual distributed Bragg reflector (DBR)-based planar microcavity, which is verified to be highly compatible with the OLEFETs. The dual DBR planar microcavity shows the great advantage of simultaneously promoting the quality (Q) factor and outcoupling efficiency of the device due to the reduced optical loss. As a result, a moderately high Q factor of ∼160, corresponding to EL spectrum linewidth as narrow as 3.2 nm, concomitantly with high outcoupling efficiency (∼7.1%) has been successfully obtained. Our results manifest that the dual DBR-based planar microcavity is a promising type of resonator, which might find potential applications in improving the spectra and efficiency performance of OLEFETs as well as in OLEFET-based electrically pumped OSLs.
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Chen H, Huang W, Marks TJ, Facchetti A, Meng H. Recent Advances in Multi-Layer Light-Emitting Heterostructure Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2007661. [PMID: 33660408 DOI: 10.1002/smll.202007661] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2020] [Revised: 01/21/2021] [Indexed: 06/12/2023]
Abstract
Light-emitting transistors (LETs) have attracted tremendous academic and industrial interest due to their dual functions of electrical switching and light emission in a single device, which can considerably reduce system complexity and manufacturing costs, especially in the area of flat panel and flexible displays as well as lighting and lasers. In recent years, enhanced LET performance has been achieved by introducing multiple-layer heterostructures in the charge-carrying/light-emitting LET channel versus the best-reported performance in single active layer LETs, rendering multi-layer LETs promising candidates for next-generation display technologies. In this review, the fundamental structures and working principles of multi-layer heterostructure LETs are introduced. Next, developments in multi-layer LETs are discussed based on co-planar LETs, non-planar LETs, and vertical LETs including organic, quantum dot, and perovskite light emitters. Finally, this review concludes with a summary and a perspective on the future of this research field.
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Affiliation(s)
- Hongming Chen
- School of Advanced Materials, Peking University Shenzhen Graduate School, 2199 Lishui Road, Shenzhen, 518055, P. R. China
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Wei Huang
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Flexterra Corporation, 8025 Lamon Avenue, Skokie, IL, 60077, USA
| | - Hong Meng
- School of Advanced Materials, Peking University Shenzhen Graduate School, 2199 Lishui Road, Shenzhen, 518055, P. R. China
- School of Electronics and Information, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, P. R. China
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