Fast formation and growth of high-density Sn whiskers in Mg/Sn-based solder/Mg joints by ultrasonic-assisted soldering: Phenomena, mechanism and prevention

Effect of Electromigration and Thermal Ageing on the Tin Whiskers’ Formation in Thin Sn–0.7Cu–0.05Ga Lead (Pb)-Free Solder Joints

The investigation on tin (Sn) whiskers formation has been widely applied in the field of lead-free electronic packaging. This is due to the fact that use of the Sn–Pb finishes has converted to Pb-free finishes in the electronic industry. Sn whiskers can grow long enough to cause a short circuit, which affects electronic devices’ reliability. This study investigates Sn whiskers’ formation in the thin Sn–0.7Cu–0.05Ga Pb-free solder under the influence of electromigration and thermal ageing for surface finish applications. The samples were stored in ambient conditions for 1000 h before being exposed to electromigration and thermal ageing to study the corresponding whiskers’ growth. A scanning electron microscope (SEM) was used to study the Sn whiskers’ microstructure, while an optical microscope (OM) was utilized to investigate the IMC layers in the samples. The results show that the addition of 0.05 wt.% gallium (Ga) decreased the Sn whisker’s length and growth density while simultaneously refining the IMC layers. Synchrotron micro-XRF (µ-XRF) shows the existence and distribution of Ga addition in both electromigration and thermal ageing samples. The shear test was used to determine the solder alloys’ mechanical properties. As a result, the addition of Ga to the Sn–0.7Cu solder improved the fracture morphology of solder joints. In conclusion, Ga’s addition resulted in decreasing Sn whisker formation and refining of the IMCs while also increasing the shear strength of the Sn–0.7Cu solder by ~14%.

Control Al/Mg intermetallic compound formation during ultrasonic-assisted soldering Mg to Al

To prevent the formation of Al/Mg intermetallic compounds (IMCs) of Al₃Mg₂ and Al₁₂Mg₁₇, dissimilar Al/Mg were ultrasonic-assisted soldered using Sn-based filler metals. A new IMC of Mg₂Sn formed in the soldered joints during this process and it was prone to crack at large thickness. The thickness of Mg₂Sn was reduced to 22 μm at 285 °C when using Sn-3Cu as the filler metal. Cracks were still observed inside the blocky Mg₂Sn. The thickness of Mg₂Sn was significantly reduced when using Sn-9Zn as the filler metal. A 17 μm Mg₂Sn layer without crack was obtained at a temperature of 200 °C, ultrasonic power of Mode I, and ultrasonic time of 2 s. The shear strengths of the joints using Sn-9Zn was much higher than those using Sn-3Cu because of the thinner Mg₂Sn layer in the former joints. Sn whiskers were prevented by using Sn-9Zn. A cavitation model during ultrasonic assisted soldering was proposed.

Improved electrical and thermo-mechanical properties of a MWCNT/In-Sn-Bi composite solder reflowing on a flexible PET substrate

Multi-walled carbon nanotube (MWCNT)/indium–tin–bismuth (In–Sn–Bi) composite nanostructures in which In–Sn–Bi nanoparticles have been penetrated by the MWCNT arrays were synthesized using a chemical reduction method. The incorporation of 0.6 wt% MWCNTs with high electrical conductivity into the In-based solder resulted in low minimum electrical resistivity (19.9 ± 1.0 µΩ·cm). Despite being reflowed at the relatively low temperature of 110 °C, the composite solder nanostructures were able to form mechanically stable solder bumps on a flexible polyethylene terephthalate (PET) substrate due to the MWCNT arrays with a high thermal conductivity of 3000 W/(m·K) and In–Sn–Bi nanoparticles with a low melting temperature of 98.2 °C. Notably, the composite solder bumps exhibited high flexibility (17.7% resistance increase over 1000 cycles of operation in a bending test) and strong adhesion strength (0.9 N average shear strength in a scratch test) on the plastic substrate because of the presence of mechanically flexible and strong MWCNTs dispersed within the solder matrix materials. These overall properties are due to the improved diffusivity of the composite solder nanostructures by the cover of the In–Sn–Bi nanoparticles along the MWCNT arrays and the network structure formation of the composite solder bumps.

One-Step Fabrication of 3D Nanohierarchical Nickel Nanomace Array To Sinter with Silver NPs and the Interfacial Analysis

Three-dimensional (3D) nanohierarchical Ni nanomace (Ni NM) array was fabricated on copper substrate by only one step with electroplating method, the unique structure was covered with Au film (Ni/Au NM) without changing its morphology, and in the following step, it was sintered with silver nanoparticle (Ag NP) paste. The structure of the Ni NM array and its surface morphology were characterized by X-ray diffraction, scanning electron microscope (SEM), and atomic force microscope. The sintered interface was investigated by SEM, transmission electron microscopy, and energy-dispersive X-ray spectroscopy to analyze the sintering mechanism. The results showed that a metallurgical bond was successfully achieved at 250 °C without any gas or vacuum shield and extra pressure. The Cu substrate with Ni/Au NM array was able to join with the Ag NP paste without obvious voids. Due to the compatible chemical potential between Ag NPs and Ni/Au NM array, the Au element was able to diffuse into the Ag layer with about 800 nm distance. Based on the excellent 3D nanohierarchical structure, the shear strength of Ni/Au NM array was 6 times stronger than the flat Ni/Au coated substrate. It turned out that the substrate surface played a crucial role in improving the shear strength and sintering efficiency. The 3D Ni NM array had achieved an excellent bonding interface and had great potential application in the microelectronics packaging field.