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Zhang L, Song Y, Gong Q. GaAs-Based InPBi Quantum Dots for High Efficiency Super-Luminescence Diodes. Int J Mol Sci 2019; 20:ijms20236001. [PMID: 31795220 PMCID: PMC6929012 DOI: 10.3390/ijms20236001] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2019] [Revised: 11/20/2019] [Accepted: 11/25/2019] [Indexed: 11/16/2022] Open
Abstract
InPBi exhibits broad and strong photoluminescence at room temperature, and is a potential candidate for fabricating super-luminescence diodes applied in optical coherence tomography. In this paper, the strained InPBi quantum dot (QD) embedded in the AlGaAs barrier on a GaAs platform is proposed to enhance the light emission efficiency and further broaden the photoluminescence spectrum. The finite element method is used to calculate the strain distribution, band alignment and confined levels of InPBi QDs. The carrier recombinations between the ground states and the deep levels are systematically investigated. A high Bi content and a flat QD shape are found preferable for fabricating super-luminescence diodes with high efficiency and a broad emission spectrum.
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Affiliation(s)
- Liyao Zhang
- Department of Physics, University of Shanghai for Science and Technology, Shanghai 200093, China
- Correspondence: (L.Z.); (Q.G.)
| | - Yuxin Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China;
| | - Qian Gong
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China;
- Correspondence: (L.Z.); (Q.G.)
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Zhang L, Song Y, Chen Q, Zhu Z, Wang S. InPBi Quantum Dots for Super-Luminescence Diodes. NANOMATERIALS (BASEL, SWITZERLAND) 2018; 8:nano8090705. [PMID: 30201890 PMCID: PMC6164714 DOI: 10.3390/nano8090705] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/16/2018] [Revised: 08/30/2018] [Accepted: 09/06/2018] [Indexed: 06/08/2023]
Abstract
InPBi thin film has shown ultra-broad room temperature photoluminescence, which is promising for applications in super-luminescent diodes (SLDs) but met problems with low light emission efficiency. In this paper, InPBi quantum dot (QD) is proposed to serve as the active material for future InPBi SLDs. The quantum confinement for carriers and reduced spatial size of QD structure can improve light emission efficiently. We employ finite element method to simulate strain distribution inside QDs and use the result as input for calculating electronic properties. We systematically investigate different transitions involving carriers on the band edges and the deep levels as a function of Bi composition and InPBi QD geometry embedded in InAlAs lattice matched to InP. A flat QD shape with a moderate Bi content of a few percent over 3.2% would provide the optimal performance of SLDs with a bright and wide spectrum at a short center wavelength, promising for future optical coherence tomography applications.
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Affiliation(s)
- Liyao Zhang
- Department of Physics, University of Shanghai for Science and Technology, Shanghai 200093, China.
| | - Yuxin Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China.
- Key Laboratory of Terahertz Technology, Chinese Academy of Sciences, Shanghai 200050, China.
| | - Qimiao Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore.
| | - Zhongyunshen Zhu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China.
| | - Shumin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China.
- Key Laboratory of Terahertz Technology, Chinese Academy of Sciences, Shanghai 200050, China.
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296, Sweden.
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Zhang L, Wu M, Chen X, Wu X, Spiecker E, Song Y, Pan W, Li Y, Yue L, Shao J, Wang S. Nanoscale distribution of Bi atoms in InP 1-xBi x. Sci Rep 2017; 7:12278. [PMID: 28947809 PMCID: PMC5612989 DOI: 10.1038/s41598-017-12075-2] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/15/2016] [Accepted: 09/04/2017] [Indexed: 11/09/2022] Open
Abstract
The nanoscale distribution of Bi in InPBi is determined by atom probe tomography and transmission electron microscopy. The distribution of Bi atoms is not uniform both along the growth direction and within the film plane. A statistically high Bi-content region is observed at the bottom of the InPBi layer close to the InPBi/InP interface. Bi-rich V-shaped walls on the (-111) and (1-11) planes close to the InPBi/InP interface and quasi-periodic Bi-rich nanowalls in the (1-10) plane with a periodicity of about 100 nm are observed. A growth model is proposed to explain the formation of these unique Bi-related nanoscale features. These features can significantly affect the deep levels of the InPBi epilayer. The regions in the InPBi layer with or without these Bi-related nanostructures exhibit different optical properties.
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Affiliation(s)
- Liyao Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Mingjian Wu
- Institute of Micro- and Nanostructure Research & Center for Nanoanalysis and Electron Microscopy (CENEM), Department of Materials Science, Universität Erlangen-Nürnberg, Cauerstraße 6, D-91058, Erlangen, Germany
- Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin, Germany
| | - Xiren Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, CAS, 500 Yutian Road, Shanghai, 200083, China
| | - Xiaoyan Wu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Erdmann Spiecker
- Institute of Micro- and Nanostructure Research & Center for Nanoanalysis and Electron Microscopy (CENEM), Department of Materials Science, Universität Erlangen-Nürnberg, Cauerstraße 6, D-91058, Erlangen, Germany
| | - Yuxin Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Wenwu Pan
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Yaoyao Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Li Yue
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China
| | - Jun Shao
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, CAS, 500 Yutian Road, Shanghai, 200083, China
| | - Shumin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China.
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296, Gothenburg, Sweden.
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