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Hemme P, Li CH, Djemia P, Rovillain P, Houver S, Gallais Y, Sacuto A, Sakata H, Nowak S, Baptiste B, Charron E, Perrin B, Belliard L, Cazayous M. Elastic and magnetoelastic properties of TbMnO 3single crystal by nanosecond time resolved acoustics and first-principles calculations. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:495402. [PMID: 34507312 DOI: 10.1088/1361-648x/ac25ad] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2021] [Accepted: 09/10/2021] [Indexed: 06/13/2023]
Abstract
Time resolved pump and probe acoustics and first-principles calculations were employed to assess elastic properties of the TbMnO3perovskite manganite having orthorhombic symmetry. Measuring sound velocities of bulk longitudinal and shear acoustic waves propagating along at least two different directions in the high symmetry planes (100), (010) and (001), provided a powerful mean to selectively determine the six diagonal elastic constantsC11= 227 GPa,C22= 349 GPa,C33= 274 GPa,C44= 71 GPa,C55= 57 GPa,C66= 62 GPa. Among the three remaining off-diagonal ones,C23= 103 GPa was determined with a bissectrice direction. Density functional theory calculations with colinear spin-polarized provided complementary insights on their optical, elastic and magnetoelastic properties.
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Affiliation(s)
- P Hemme
- Laboratoire Matériaux et Phénomènes Quantiques, Université de Paris, UMR 7162 CNRS, 75205 Paris Cedex 13, France
| | - C-H Li
- Laboratoire des Sciences des Procédés et des Matériaux UPR-CNRS 3407, Université Sorbonne Paris Nord, Alliance Sorbonne Paris Cité, Villetaneuse, 93430, France
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - P Djemia
- Laboratoire des Sciences des Procédés et des Matériaux UPR-CNRS 3407, Université Sorbonne Paris Nord, Alliance Sorbonne Paris Cité, Villetaneuse, 93430, France
| | - P Rovillain
- Institut des Nanosciences de Paris, Sorbonne Université, CNRS UMR 7588, 4 Place Jussieu, 75005 Paris, France
| | - S Houver
- Laboratoire Matériaux et Phénomènes Quantiques, Université de Paris, UMR 7162 CNRS, 75205 Paris Cedex 13, France
| | - Y Gallais
- Laboratoire Matériaux et Phénomènes Quantiques, Université de Paris, UMR 7162 CNRS, 75205 Paris Cedex 13, France
| | - A Sacuto
- Laboratoire Matériaux et Phénomènes Quantiques, Université de Paris, UMR 7162 CNRS, 75205 Paris Cedex 13, France
| | - H Sakata
- Department of Physics, Tokyo University of Science, 1-3 Kagurazaka Shinjyuku-ku Tokyo 162-8601, Japan
| | - S Nowak
- UFR de Chimie, Université de Paris, 15 rue Jean Antoine de Baïf, 75013 Paris, France
| | - B Baptiste
- Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, CNRS UMR 7590, Sorbonne Université, 75005 Paris, France
| | - E Charron
- Institut des Nanosciences de Paris, Sorbonne Université, CNRS UMR 7588, 4 Place Jussieu, 75005 Paris, France
| | - B Perrin
- Institut des Nanosciences de Paris, Sorbonne Université, CNRS UMR 7588, 4 Place Jussieu, 75005 Paris, France
| | - L Belliard
- Institut des Nanosciences de Paris, Sorbonne Université, CNRS UMR 7588, 4 Place Jussieu, 75005 Paris, France
| | - M Cazayous
- Laboratoire Matériaux et Phénomènes Quantiques, Université de Paris, UMR 7162 CNRS, 75205 Paris Cedex 13, France
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Smari M, Hamdi R, Prado-Gonjal J, Cortés-Gil R, Dhahri E, Mompean F, García-Hernández M, Schmidt R. Magnetoimpedance spectroscopy of phase-separated La 0.5Ca 0.5MnO 3 polycrystalline manganites. Phys Chem Chem Phys 2020; 22:11625-11636. [PMID: 32405632 DOI: 10.1039/d0cp00794c] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Magnetoimpedance spectroscopy was carried out on phase-separated La0.5Ca0.5MnO3 polycrystalline manganites. The La0.5Ca0.5MnO3 powder was synthesized following an adapted sol-gel route. Structural and magnetic data showed the signs of phase coexistence of ferromagnetic (FM) Pnma and charge-ordered antiferromagnetic (CO-AFM) P21/m phases. Magnetization vs. temperature (M vs. T) measurements revealed several magnetic transitions from the high temperature paramagnetic (PM) to an FM phase upon cooling (PM-FM) at ≈240 K, FM-AFM (≈170 K) and AFM-FM (≈100 K). Magnetic field (H)-dependent impedance spectroscopy data were collected from sintered pellets and fitted with an equivalent circuit model to separately analyze the different dielectric contributions from the grain boundary (GB) and the grain interior bulk areas. This allowed separating the GB and bulk magnetoresistance (MR), which was shown to amount to a maximum of ≈80% for both GB and bulk at H = 10 T near the metal-insulator transition (MIT) at ≈100 K. The GB resistance was found to be larger than the bulk resistance by a factor of ≈3, which implies that the direct current (DC) resistance and DC MR are dominated by contributions from the GBs. The magnetocapacitance (MC) effects detected were all found to be small below ≈3%, including in the presence of a CO phase.
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Affiliation(s)
- Mourad Smari
- CICECO, Aveiro Institute of Materials, Department of Materials and Ceramic Engineering, University of Aveiro, 3810-193 Aveiro, Portugal.
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Li Y, Chen D, Dong X, Qiao L, He Y, Xiong X, Li J, Peng X, Zheng J, Wang X, Li X, Wang Q, Duan J, Wang Z, Han J, Xiao W. Magnetic and electric properties of single crystal MnI 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:335803. [PMID: 32294629 DOI: 10.1088/1361-648x/ab8983] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2020] [Accepted: 04/15/2020] [Indexed: 06/11/2023]
Abstract
Multiferroic materials endowed with both dielectric and magnetic orders, are ideal candidates for a wide range of applications. In this work, we reported two phase transitions of MnI2at 3.45 K and 4 K by systemically measuring the magnetic-field and temperature-dependent magnetization of the MnI2thin flakes. Furthermore, we observed similar temperature and field-dependent behaviours for the magnetic susceptibility of MnI2and electronic capacitance of the Ag/MnI2/Ag devices below 3.5 K. Considering the related theory work, we discussed the relationship between the antiferromagnetic and ferroelectric orders in MnI2. Our work reveals the in-plane magnetic and electric properties of MnI2materials, which might be helpful for the further investigation and application of MnI2multiferroics in the future.
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Affiliation(s)
- Yongkai Li
- Key laboratory of advanced optoelectronic quantum architecture and measurement, ministry of education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Dongyun Chen
- Key laboratory of advanced optoelectronic quantum architecture and measurement, ministry of education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Xu Dong
- Key laboratory of advanced optoelectronic quantum architecture and measurement, ministry of education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Lu Qiao
- Key laboratory of advanced optoelectronic quantum architecture and measurement, ministry of education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Yuan He
- Key laboratory of advanced optoelectronic quantum architecture and measurement, ministry of education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Xiaolu Xiong
- Key laboratory of advanced optoelectronic quantum architecture and measurement, ministry of education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Ji Li
- Key laboratory of advanced optoelectronic quantum architecture and measurement, ministry of education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Xianglin Peng
- Key laboratory of advanced optoelectronic quantum architecture and measurement, ministry of education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Jingchuan Zheng
- Key laboratory of advanced optoelectronic quantum architecture and measurement, ministry of education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Xiangzhuo Wang
- Key laboratory of advanced optoelectronic quantum architecture and measurement, ministry of education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Xiang Li
- Key laboratory of advanced optoelectronic quantum architecture and measurement, ministry of education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Qinsheng Wang
- Key laboratory of advanced optoelectronic quantum architecture and measurement, ministry of education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Junxi Duan
- Key laboratory of advanced optoelectronic quantum architecture and measurement, ministry of education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Zhiwei Wang
- Key laboratory of advanced optoelectronic quantum architecture and measurement, ministry of education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Junfeng Han
- Key laboratory of advanced optoelectronic quantum architecture and measurement, ministry of education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Wende Xiao
- Key laboratory of advanced optoelectronic quantum architecture and measurement, ministry of education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
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Probing Ferroic States in Oxide Thin Films Using Optical Second Harmonic Generation. APPLIED SCIENCES-BASEL 2018. [DOI: 10.3390/app8040570] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Forthcoming low-energy consumption oxide electronics rely on the deterministic control of ferroelectric and multiferroic domain states at the nanoscale. In this review, we address the recent progress in the field of investigation of ferroic order in thin films and heterostructures, with a focus on non-invasive optical second harmonic generation (SHG). For more than 50 years, SHG has served as an established technique for probing ferroic order in bulk materials. Here, we will survey the specific new aspects introduced to SHG investigation of ferroelectrics and multiferroics by working with thin film structures. We show how SHG can probe complex ferroic domain patterns non-invasively and even if the lateral domain size is below the optical resolution limit or buried beneath an otherwise impenetrable cap layer. We emphasize the potential of SHG to distinguish contributions from individual (multi-) ferroic films or interfaces buried in a device or multilayer architecture. Special attention is given to monitoring switching events in buried ferroic domain- and domain-wall distributions by SHG, thus opening new avenues towards the determination of the domain dynamics. Another aspect studied by SHG is the role of strain. We will finally show that by integrating SHG into the ongoing thin film deposition process, we can monitor the emergence of ferroic order and properties in situ, while they emerge during growth. Our review closes with an outlook, emphasizing the present underrepresentation of ferroic switching dynamics in the study of ferroic oxide heterostructures.
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