High-accuracy current generation in the nanoampere regime from a silicon single-trap electron pump

Universality and Multiplication of Gigahertz-Operated Silicon Pumps with Parts Per Million-Level Uncertainty

The universality of physical phenomena is a pivotal concept underlying quantum standards. In this context, the realization of a quantum current standard using silicon single-electron pumps necessitates the verification of the equivalence across multiple devices. Herein, we experimentally investigate the universality of pumped currents from two different silicon single-electron devices which are placed inside the cryogen-free dilution refrigerator whose temperature (mixing chamber plate) was ∼150 mK under the operation of the pump devices. By direct comparison using an ultrastable current amplifier as a galvanometer, we confirm that two pumped currents are consistent with ∼1 ppm uncertainty. Furthermore, we realize quantum-current multiplication with a similar uncertainty by adding the currents of two different gigahertz (GHz)-operated silicon pumps, whose generated currents are confirmed to be identical. These results pave the way for realizing a quantum current standard in the nanoampere range and a quantum metrology triangle experiment using silicon pump devices.

Quantized current steps due to the a.c. coherent quantum phase-slip effect

The a.c. Josephson effect predicted in 1962¹ and observed experimentally in 1963² as quantized 'voltage steps' (the Shapiro steps) from photon-assisted tunnelling of Cooper pairs is among the most fundamental phenomena of quantum mechanics and is vital for metrological quantum voltage standards. The physically dual effect, the a.c. coherent quantum phase slip (CQPS), photon-assisted tunnelling of magnetic fluxes through a superconducting nanowire, is envisaged to reveal itself as quantized 'current steps'^3,4. The basic physical significance of the a.c. CQPS is also complemented by practical importance in future current standards, a missing element for closing the quantum metrology triangle^5,6. In 2012, the CQPS was demonstrated as superposition of magnetic flux quanta in superconducting nanowires ⁷. However, the direct flat current steps in superconductors, the only unavailable basic effect of superconductivity to date, was unattainable due to lack of appropriate materials and challenges in circuit engineering. Here we report the direct observation of the dual Shapiro steps in a superconducting nanowire. The sharp steps are clear up to 26 GHz frequency with current values 8.3 nA and limited by the present set-up bandwidth. The current steps were theoretically predicted in small Josephson junctions 30 years ago⁵. However, unavoidable broadening in Josephson junctions prevents their direct experimental observation^8,9. We solve this problem by placing a thin NbN nanowire in an inductive environment.

Gate-tunable quantum dot formation between localized-resonant states in a few-layer MoS2

We demonstrate a gate-tunable quantum dot (QD) located between two potential barriers defined in a few-layer MoS₂. Although both local gates used to tune the potential barriers have disorder-induced QDs, we observe diagonal current stripes in current resonant islands formed by the alignment of the Fermi levels of the electrodes and the energy levels of the disorder-induced QDs, as evidence of the gate-tunable QD. We demonstrate that the charging energy of the designed QD can be tuned in the range of 2-6 meV by changing the local-gate voltages in ∼1 V.

Probing hole spin transport of disorder quantum dots via Pauli spin-blockade in standard silicon transistors

Single hole transport and spin detection is achievable in standard p-type silicon transistors owing to the strong orbital quantization of disorder based quantum dots. Through the use of the well acting as a pseudo-gate, we discover the formation of a double-quantum dot system exhibiting Pauli spin-blockade and investigate the magnetic field dependence of the leakage current. This enables attributes that are key to hole spin state control to be determined, where we calculate a tunnel couplingt_cof 57μeV and a short spin-orbit lengthl_SOof 250 nm. The demonstrated strong spin-orbit interaction at the interface when using disorder based quantum dots supports electric-field mediated control. These results provide further motivation that a readily scalable platform such as industry standard silicon technology can be used to investigate interactions which are useful for quantum information processing.

Picosecond coherent electron motion in a silicon single-electron source

An advanced understanding of ultrafast coherent electron dynamics is necessary for the application of submicrometre devices under a non-equilibrium drive to quantum technology, including on-demand single-electron sources¹, electron quantum optics^2-4, qubit control^5-7, quantum sensing^8,9 and quantum metrology¹⁰. Although electron dynamics along an extended channel has been studied extensively^2-4,11, it is hard to capture the electron motion inside submicrometre devices. The frequency of the internal, coherent dynamics is typically higher than 100 GHz, beyond the state-of-the-art experimental bandwidth of less than 10 GHz (refs. ^6,12,13). Although the dynamics can be detected by means of a surface-acoustic-wave quantum dot¹⁴, this method does not allow for a time-resolved detection. Here we theoretically and experimentally demonstrate how we can observe the internal dynamics in a silicon single-electron source that comprises a dynamic quantum dot in an effective time-resolved fashion with picosecond resolution using a resonant level as a detector. The experimental observations and the simulations with realistic parameters show that a non-adiabatically excited electron wave packet¹⁵ spatially oscillates quantum coherently at ~250 GHz inside the source at 4.2 K. The developed technique may, in future, enable the detection of fast dynamics in cavities, the control of non-adiabatic excitations¹⁵ or a single-electron source that emits engineered wave packets¹⁶. With such achievements, high-fidelity initialization of flying qubits⁵, high-resolution and high-speed electromagnetic-field sensing⁸ and high-accuracy current sources¹⁷ may become possible.

Unusual Quantum Transport Mechanisms in Silicon Nano-Devices

Silicon-based materials have been the leading platforms for the development of classical information science and are now one of the major contenders for future developments in the field of quantum information science. In this short review paper, while discussing only some examples, I will describe how silicon Complementary-Metal-Oxide-Semiconductor (CMOS) compatible materials have been able to provide platforms for the observation of some of the most unusual transport phenomena in condensed matter physics.

Shuttling a single charge across a one-dimensional array of silicon quantum dots

Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates based on exchange coupling, and the achievement of coherent single spin-photon coupling. Coupling arbitrary pairs of spatially separated qubits in a quantum register poses a significant challenge as most qubit systems are constrained to two dimensions with nearest neighbor connectivity. For spins in silicon, new methods for quantum state transfer should be developed to achieve connectivity beyond nearest-neighbor exchange. Here we demonstrate shuttling of a single electron across a linear array of nine series-coupled silicon quantum dots in ~50 ns via a series of pairwise interdot charge transfers. By constructing more complex pulse sequences we perform parallel shuttling of two and three electrons at a time through the array. These experiments demonstrate a scalable approach to physically transporting single electrons across large silicon quantum dot arrays.

Manipulation of random telegraph signals in a silicon nanowire transistor with a triple gate

Manipulation of carrier densities at the single electron level is inevitable in modern silicon based transistors to ensure reliable circuit operation with sufficiently low threshold-voltage variations. However, previous methods required statistical analysis to identify devices which exhibit random telegraph signals (RTSs), caused by trapping and de-trapping of a single electron. Here, we show that we can deliberately introduce an RTS in a silicon nanowire transistor, with its probability distribution perfectly controlled by a triple gate. A quantum dot (QD) was electrically defined in a silicon nanowire transistor with a triple gate, and an RTS was observed when two barrier gates were negatively biased to form potential barriers, while the entire nanowire channel was weakly inverted by the top gate. We could successfully derive the energy levels in the QD from the quantum mechanical probability distributions and the average lifetimes of RTSs. This study reveals that we can manipulate individual electrons electrically, even at room temperature, and paves the way to use a charged state for quantum technologies in the future.

Gigahertz Single-Electron Pumping Mediated by Parasitic States

In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency-dependent features in the pumped current.